2N5564/5565/5566

Vishay Siliconix

Matched N-Channel JFET Pairs

PRODUCT SUMMARY
Part Number

VGS(off) (V)

V(BR)GSS Min (V)

gfs Min (mS)

IG Typ (pA)

jVGS1 VGS2j Max (mV)

2N5564

0.5 to 3

40

7.5

2N5565

0.5 to 3

40

7.5

10

2N5566

0.5 to 3

40

7.5

20

FEATURES
D
D
D
D
D
D
D

Two-Chip Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage: 3 pA
Low Noise: 12 nVHz @ 10 Hz
Good CMRR: 76 dB
Minimum Parasitics

BENEFITS

APPLICATIONS

D Tight Differential Match vs. Current

D Improved Op Amp Speed, Settling Time
Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signals
D Maximum High Frequency Performance

D Wideband Differential Amps

D High-Speed,
Temp-Compensated,
Single-Ended Input Amps
D High-Speed Comparators
D Impedance Converters
D Matched Switches

DESCRIPTION
The 2N5564/5565/5566 are matched pairs of JFETs mounted
in a TO-71 package. This two-chip design reduces parasitics
for good performance at high frequency while ensuring
extremely tight matching.
This series features high
breakdown voltage (V(BR)DSS typically > 55 V), high gain
(typically > 9 mS), and <5 mV offset between the two die.

The hermetically-sealed TO-71 package is available with full

military processing (see Military Information).
For similar products see the low-noise U/SST401 series, and
the low-leakage 2N5196/5197/5198/5199 data sheets.

TO-71
S1

G2
1

D1

D2

5
3

G1

S2
Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V

Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to 150_C

Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "80 V

Power Dissipation :

Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (1/16 from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300 _C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to 200_C
Document Number: 70254
S-50150Rev. E, 24-Jan-05

Per Sidea . . . . . . . . . . . . . . . . . . . . . . . . 325 mW

Totalb . . . . . . . . . . . . . . . . . . . . . . . . . . . 650 mW

Notes
a. Derate 2.6 mW/_C above 25_C
b. Derate 5.2 mW/_C above 25_C
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2N5564/5565/5566
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N5564

2N5565

2N5566

Symbol

Test Conditions

Typa

V(BR)GSS

IG = 1 mA, VDS = 0 V

55

40

VGS(off)

VDS = 15 V, ID = 1 nA

0.5

0.5

0.5

Saturation Drain
Currentb

IDSS

VDS = 15 V, VGS = 0 V

20

30

30

30

mA

Gate Reverse Current

IGSS

VGS = 20 V, VDS = 0 V

100

100

100

pA

10

200

200

200

nA

Parameter

Min

Max

Min

Max

Min

Max

Unit

Static
Gate-Source
Breakdown Voltage
Gate-Source
Cutoff Voltage

Gate Operating Currentc

Drain-Source
On-Resistance
Gate-Source Voltagec
Gate-Source
Forward Voltage

40

40
V

IG

TA = 150_C
VDG = 15 V, ID = 2 mA
TA = 125_C

pA

nA

rDS(on)

VGS = 0 V, ID = 1 mA

50

VGS

VDG = 15 V, ID = 2 mA

1.2

VGS(F)

IG = 2 mA , VDS = 0 V

0.7

100

100

100

Dynamic
Common-Source
Forward Transconductance

gfs

Common-Source
Output Conductance

gos

Common-Source
Forward Transconductanced

gfs

Common-Source
Input Capacitance

Ciss

Common-Source
Reverse Transfer
Capacitance

Crss

Equivalent Input
Noise Voltage

en

Noise Figure

NF

VDS = 15 V, ID = 2 mA
f = 1 kHz
VDS = 15 V, ID = 2 mA
f = 100 MHz

VDS = 15 V,
V ID = 2 mA
f = 1 MHz
VDS = 15 V, ID = 2 mA
f = 10 Hz

7.5

35
8.5

12.5

7.5

45

12.5

7.5

45

12.5

mS

45

mS
mS

10

12

12

12

2.5

12

50

50

50

nV
Hz

dB

pF

RG = 10 MW

Matching
Differential
Gate-Source Voltage

|V GS1V GS2|

VDG = 15 V, ID = 2 mA

10

20

mV

Gate-Source Voltage
Differential Change
with Temperature

D|V GS1V GS2|

VDG = 15 V, ID = 2 mA
TA = 55 to 125_C

10

25

50

mV/
_C

Saturation Drain
Current Ratioc

DT

I DSS1

I DSS2

Transconductance Ratio

gfs1
gfs2

Common Mode
Rejection Ratioc

CMRR

VDS = 15 V, VGS = 0 V

0.98

0.95

0.95

0.95

VDS = 15 V, ID = 2 mA
f = 1 kHz

0.98

0.95

0.90

0.90

VDG = 10 to 20 V
ID = 2 mA

76

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. This parameter not registered with JEDEC.
d. Not a production test.

dB
NCBD

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

www.vishay.com

Document Number: 70254

S-50150Rev. E, 24-Jan-05

2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage

80

160
IDSS

rDS

60

120

40

80

20

40

r DS(on) Drain-Source On-Resistance ( W )

rDS @ ID = 1 mA, VGS = 0

IDSS @ VDS = 15 V, VGS = 0

TA = 25_C
80
VGS(off) = 2 V

60

40

20

0
2

On-Resistance vs. Drain Current

100

200
I DSS Saturation Drain Current (mA)

r DS(on) Drain-Source On-Resistance ( W )

100

10

10

VGS(off) Gate-Source Cutoff Voltage (V)

ID Drain Current (mA)

On-Resistance vs. Temperature

Turn-On Switching

tr approximately independent of ID
VDG = 5 V, RG = 50 W
VGS(L) = 10 V

ID = 1 mA
rDS changes 0.7%/_C

160

4
Switching Time (ns)

r DS(on) Drain-Source On-Resistance ( W )

200

120
VGS(off) = 2 V
80

40

tr
3

td(on) @
ID = 12 mA

td(on) @
ID = 3 mA

0
55 35

15

25

45

65

85

105

125

Forward Transconductance and Output Conductance

vs. Gate-Source Cutoff Voltage

40

400
gos

200

20

200

10

100

VGS(off) Gate-Source Cutoff Voltage (V)

Document Number: 70254
S-50150Rev. E, 24-Jan-05

10

0
10

td(off) independent of device VGS(off)

VDG = 5 V, VGS(L) = 10 V
24
tf
Switching Time (ns)

gfs and gos @ VDS = 15 V

VGS = 0 V, f = 1 kHz

30

Turn-Off Switching

30

500

g os Output Conductance ( mS)

g fs Forward Transconductance (mS)

50

gfs

VGS(off) Gate-Source Cutoff Voltage (V)

TA Temperature (_C)

100

18
VGS(off) = 2 V
12
td(off)
6

0
0

10

ID Drain Current (mA)

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2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics

14

VGS(off) = 1.5 V

VGS(off) = 2 V

VGS = 0 V

12
10

0.2 V
8

0.3 V

0.4 V

0.5 V
0.6 V

24

TA = 55_C
25_C

16

125_C

2
0.7 V

0
0

12

16

20

VDS Drain-Source Voltage (V)

Output Characteristics

VGS = 0 V

0.4 V

Capacitance (pF)

I D Drain Current (mA)

24

0.3 V

3
0.5 V
0.6 V

18

12

0.7 V
1

Ciss
6

0.8 V

Crss

0.9 V

0
0

0.2

0.4

0.6

0.8

0
1

Gate Leakage Current

12

16

20

1 mA

gig
big

10

100 pA
1 mA
10 pA

10 mA

(mS)

I G Gate Leakage

VDG = 15 V
ID = 10 mA
TA = 25_C

ID = 10 mA

TA = 125_C

Common-Gate Input Admittance

100

IGSS @ 25_C

1 nA

VGS Gate-Source Voltage (V)

VDS Drain-Source Voltage (V)

10 nA

f = 1 MHz
VDS = 0 V

0.2 V

0.4
0.8
1.2
1.6
VGS Gate-Source Voltage (V)

Capacitance vs. Gate-Source Voltage

30

VGS(off) = 1.5 V

0.1 V

VDS = 15 V

32

0.1 V
I D Drain Current (mA)

I D Drain Current (mA)

Transfer Characteristics

40

IGSS @ 25_C

TA = 25_C

1 pA
IG(on) @ ID
0.1 pA

0.1
0

12

18

VDG Drain-Gate Voltage (V)

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24

30

100

200

500

1000

f Frequency (MHz)

Document Number: 70254

S-50150Rev. E, 24-Jan-05

2N5564/5565/5566
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Gate Forward Admittance

100

VDG = 15 V
ID = 10 mA
TA = 25_C
gfg

brg

1
(mS)

(mS)

gfg

+grg

grg
0.1

0.01
100

200
500
f Frequency (MHz)

1000

100

Common-Gate Output Admittance

100

200
500
f Frequency (MHz)

1000

Noise Voltage vs. Frequency

100

VDG = 15 V
ID = 10 mA
TA = 25_C

Hz

VDS = 15 V

en Noise Voltage nV /

bog
10
(mS)

gog

0.1

10

ID = 1 mA

ID = 10 mA

1
100

200
500
f Frequency (MHz)

1000

10

Output Conductance vs. Drain Current

VGS(off) = 2 V

100

1k
f Frequency (Hz)

VDS = 15 V
f = 1 kHz

VGS(off) = 2 V

TA = 55_C
100
25_C
125_C

10

10 k

100 k

Transconductance vs. Drain Current

100

gfs Forward Transconductance (mS)

1000

gos Output Conductance (S)

VDG = 15 V
ID = 10 mA
TA = 25_C

bfg

10

0.1

Common-Gate Reverse Admittance

10

VDS = 15 V
f = 1 kHz

TA = 55_C
25_C
10
125_C

1
0.1

1.0
ID Drain Current (mA)

10

0.1

1.0
ID Drain Current (mA)

10

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70254.
Document Number: 70254
S-50150Rev. E, 24-Jan-05

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All product specifications and data are subject to change without notice.
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therein, which apply to these products.
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Document Number: 91000

Revision: 18-Jul-08

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