THE VOLT- AMPERE RELATION FOR THE P - N JUNCTION.

(file 7)
The density of charge carriers must be a continuos function versus the distance
reported to the length of crystal lattice (see figure 1). We saw too, in last lesson, that the
diffusion length of majority charge carriers who diffuses through the junction depends on the
square root of the barrier potential. Then if we change this barrier potential by an applied
external potential, we will modify these lengths and the height of barrier potential.

kT NAND
ln 2 , at thermal balance.
e
ni
But the height of barrier potential can be written as Vb Vb0 Vext , where the convention
for external potential is the next: Vext Vext if this is the so called reverse potential (the

Lp,n KVb1/ 2 and the height of barrier potential is Vb0

positive electrode of external source is connected to N type semiconductor);

Vext Vext if this is the so called forward potential (the positive electrode of external
source is connected to P type semiconductor). The changes induced by the external voltage
to the length of depletion region, the height of barrier potential and the current who flow
through the junction are presented in figure 2.
But cant change the dependence versus length of density charge carriers (see fig.1).
Then, at forward polarisation, at the new diffusion length Lp will result an injection density of
minority carriers in the N type semiconductor (the same thing will be in the P type
semiconductor). Now, if we take the origin of x axes on the boundary of depletion region, we
p
will be in the conditions of continuity equation case E 0 ;
0 (see fig.3)
t

pn ( x ) pn0 pn ( 0 ) pn0 e

x
Lp

1.1.

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Then the diffusion current that occur can be written as:

jp ( x ) eDp

dp eDp pn ( 0 ) pn0 e

dx
Lp

x
Lp

1.2.

taking into account the relation 1.1. A similar expression will result for the component of
electrons. But, the density of minority charge carriers can be written as:

pn ( 0 ) ppe

eVb
kT

ppe

e Vb0 Vext
kT

i
pn0

eVext
e kT

1.3.

Then the final formula for the current of holes will be:
j p ( x)

eD p
Lp

p n0 e

eVext
kT

L
p n0 e p

1.4.

and for electrons will be:

x

eVext

eDn
kT
jn ( x )
n p0 e Ln
n p0 e
Ln

1.5.

The total current is the sum of 1.4 and 1.5. but this current dont depends of the x abscissa
then we can compute him in point zero:
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jt const. j p ( x ) jn ( x )

eD p p n0

x 0

Lp

eDn n p0 eVkText

1
e
Ln

1.6.

If we multiplied with the cross section of junction the relation 1.6. we will obtain the so called
Volt-Ampere characteristics of the ideal diode:
eVext

I I 0 e kT 1

1.7.

The plot of relation 1.7. is given in figure 4.

The current I0 is so called
saturation
current
or
reverse current through the
junction. The value of this
current depends of the
structure
of
crystalline
lattice. For Silicium lattice,
values of nanoampers are
usually, and for Germanium
lattice,
values
of
microampers are usually for
this current. This current is
due by the minority carriers,
and his expression can be
deduced from eq. 1.6. :
eD p p n0

I0

Lp

eDn n p0
Ln

1.8.

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