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2394-3777 (Print)
ISSN 2394
2394-3785 (Online)
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Department of ECE
Department of ECE
Coimbatore, India.
Coimbatore, India.
Priyathanikodi30@gmail.com
banu.saraswathy74@gmail.com
Abstract--In
In this paper present, a physics based compact model for the 2-dimensional
2 dimensional electron gas (2DEG) sheet charge density (ns) in AlGaN/GaN High Electron Mobility Transistor is developed by
considering AlGaN barrier layer. To obtain the various electrical characteristics such as
transconductance, cut-off
off frequency (fc), of the proposed spacer layer based AlGaN/AlN/GaN High
Electron Mobility Transistor (HEMTs)
(HEMT is modelled by considering the quasi-triangular
triangular quantum well.
This model valid for entire range of operation. The spacer layer based AlGaN/AlN/GaN heterostructure
HEMTs shows excellent promise as one of the candidates to substitute present AlGaN/GaN HEM
HEMTs for
future high speed and high power applications. To compare the result with HEMT structure.
Keywords: AlGaN/AlN/GaN 2-DEG
DEG sheet charge density triangular quatum well, High electron mobility
transistor, Electrical characteristics model.
1.
INTRODUCTION
telecommunications,
and
increase in 2-DEG
DEG density. The structure also
decrease
computing
ng
the
alloy disorder
EC, by small
scattering,
thus
20
ISSN 2394
2394-3777 (Print)
ISSN 2394
2394-3785 (Online)
Available online at www.ijartet.com
device, the
he barrier layer AlGaN must be at a higher
3.DEVICE
DEVICE CALCULATION
confined to a small
ll region in the channel layer near
the hetero-interface.
interface. This layer is called the 2-DEG.
2
2.
n s,aboveVoff
H(Vgo )
Where,
C g Vgo
H(Vgo )
C V
Vgo +Vth 1 ln(V
Vgon ) 0 g go
3 q
V 22 C V
Vgo 1 th 0 g go
Vgo 3 q
21
2/3
2/3
ISSN 2394
2394-3777 (Print)
ISSN 2394
2394-3785 (Online)
Available online at www.ijartet.com
0 Cg 3
Where,
.
3 q
Cg
is
the
gate
V Vgs Voff Vx ,
Where, go
=Cg (qDVth ),cg 0 InAlN 0 AlN
di
dd
denotes the total capacitance formed on the InAlN
can
be
written
Cg
Vgo (Vgo ) 3
ns
Vgo
2
q
3
V
2(V
(V
)
go
go
as,
Id qwns (x)Vs
ns=
[27]
C g Vgo
Vgo Vgo +
becomes
o C g Vgo
3 q
2o
3
2 /3
C g Vgo
2 /3
dVc (x)
,
dx
0E
Vs 1
ET
0 E T
if
iiff
E ET
E ET
22
ISSN 2394
2394-3777 (Print)
ISSN 2394
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With
ET
Ec Vsat
(0 Ec Vsat )
dVc (x)
dV (x)
Id 1
0qns c
w
dx
ET dx
2
Cg
Vgo (Vgo )3
dVc (x)
Id 1
dx
qw
V
dVc (x)
0
go
2
q
ET dx
3
2 go )
Vgo 2(V
fitting
parameter
with
1
3
3 2
dV(x)
(Vgo) 3
c
Id 1
dxwC
0 g V
go
c
`1
dV(x)
E
dx
T
(Vgo) 2
2
`1
3
w 0 C g
Lg
,
1
3
0 Cg 3
and
.
3 q
4. SIMULATION RESULT
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ISSN 2394
2394-3777 (Print)
ISSN 2394
2394-3785 (Online)
Available online at www.ijartet.com
characteristics
and
5. CONCLUSION
The concluded that too analyze the various
based
Transistor)
with
spacer
layer
using
Device
for
AlGaN/GaN
DasGupta,
model
6. REFERENCES
[1]
compact
IEEE
Continuous
8th
[8]
[2]
dependent two-dimensional
dimensional electron gas sheet
HEMTs, Solid-State
State Electron., vol. 46, no.
no 5, pp.
2001;22(10):4579.
spontaneous
and
piezoelectric
24
ISSN 2394
2394-3777 (Print)
ISSN 2394
2394-3785 (Online)
Available online at www.ijartet.com
2007;7(2):12031.
microwave gate-recessed
recessed AlGaN/AlN/GaN MOSMOS
HEMT with 73% power-added
added efficiency. IEEE
Electron Dev Lett 2011;32(5).
[11] Zhi Young MA, Xiao-Liang
Liang Wang, Guo
Guo-Xin
HU, Jun-Xue Ran, Hong-Ling
Ling Xiao, wei-Jun
wei
Luo,
et
al.
Growth
and
characterization
of
to
describe
electron
density
in
polynomial-based
based
control
ntrol
model
for
analytical
AlGaN/GaN
charge
HEMT.
25