IGBT

(Insulated Gate Bipolar Transistor)

MSc. Jorge Luis Rosero B.

Escuela Politecnica Nacional

Facultad de Ingeniera Electrica y Electronica
22/08/2013

jorge.rosero@epn.edu.ec
Telf: 098-600-3675
Oficina: QE-211
Asesora: Lun-Mier-Jue-Vie 14:00 a 15:00
MSc. Jorge Luis Rosero B. ( )

IGBT (Insulated Gate Bipolar Transistor)

22/08/2013

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Dispositivos de Conmutacion (1)

MSc. Jorge Luis Rosero B. ( )

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Dispositivos de Conmutacion (2)

1GW

Thyristor
10MW

GTO/IGCT

10MW
1MW

IGBT

100kW
10kW

MOSFET

1kW
100W
10Hz
MSc. Jorge Luis Rosero B. ( )

1kHz

100kHz 1MHz

IGBT (Insulated Gate Bipolar Transistor)

10MHz
22/08/2013

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Dispositivos de Conmutacion (3)

Dispositivos de Electrnica de Potencia

Tiristor

GTO
5kV
4kV

IGBT

3kV

BJT

1kHz
10kHz

2kV

1kV

100kHz

MOSFET
1MHz
1kA

2kA

3kA

4kA

5kA

6kA

f
MSc. Jorge Luis Rosero B. ( )

IGBT (Insulated Gate Bipolar Transistor)

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SIT
SITH
MCT

1.2 kV
1.5 kV
3 kV

19
1988

Dispositivos de Conmutacion (4)

des
mo
som
in
sm
sin

As power rating increases,

frequency decreases

Power (kW)

300 A
300 A
2 kV

105
SCR
GTO
MCT

104
SITH
103

BJT

As frequency increases,
power decreases

Re

IGBT

102

1.
101

100
100

MOSFET

101

102

103

104

105

106

2.
107

108

Frequency (Hz)

MSc. Jorge Luis Rosero FIGURE

B. ( )

6.31
Power Gate
vs frequency
for different power 22/08/2013
devices.
IGBT (Insulated
Bipolar Transistor)

3.
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urrents limit it extends to a power of 2 MW!

Niveles de Potencia Tpicos
hich

100k

upply,

Fr High
eq
u
(F en
De ast cy
vic
es
)

100kW

1kW

10k
Sw 100
Fr itch
eq in
u g
in enc
Hz y

Figure 1.5

MSc. Jorge Luis Rosero B. ( )

High
Current
(Parallel
Devices)

High
Power

100k
10k
1k

1k

source,
erence
tching.

1GW

In Amps

10MW

High
Voltage
(Series
Devices)

Medium
Power

10
20

200

2k

20k

100
10

Current

gnals
ithin
rol lines
ating
. These
is

0
200k

Voltage

IGBT (Insulated Gate Bipolar Transistor)

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Estructura Interna de un IGBT

t
d
r
t
c
g
c
t
1

Emitter
Gate

n+

RChannel

RJFET

Rn-

n-

B
n+
p+

t
r

Collector

Conventional
Planar
Gate
IGBT Cell
IGBT (Insulated
Gate Bipolar
Transistor)

MSc. Jorge Luis Rosero B. ( )

22/08/2013

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IGBT (Insulated Gate Bipolar Transistor)

Impedancia de entrada muy alta Zin .

Transistor Bipolar Hbrido con Compuerta MOS.
Combina las ventajas del BJT y el MOSFET.
Son mas rapidos que el BJT pero manejan menos potencia.

MSc. Jorge Luis Rosero B. ( )

IGBT (Insulated Gate Bipolar Transistor)

22/08/2013

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Conmutacion Tpica de un IGBT (1)

(a)

(b)
Figure 1.20

(a) Half-bridge converter configuration, (b) Typical switching characteristics

of an IGBT

MSc. Jorge Luis Rosero B. ( )

IGBT (Insulated Gate Bipolar Transistor)

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ored charge from the N -drift region to improve the switching time. The only way the
ored charge can be removed is by recombination within the IGBT. Traditional lifetime
Conmutaci
Tpica
de un
IGBT
(2) charges at turn-off are
lling
techniques or o
ann N+
buffer layer
to collect
the minority
mmonly used to speed-up recombination time.

Figure 9: IGBT Current and Voltage Turn-on and Turn-off Waveforms

MSc. Jorge Luis Rosero B. ( )

IGBT (Insulated Gate Bipolar Transistor)

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Conmutacion Tpica de un IGBT (3)

MSc. Jorge Luis Rosero B. ( )

IGBT (Insulated Gate Bipolar Transistor)

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Conmutacion Tpica de un IGBT (4)

VGG+

90% VGG+

10% VGG+
0
VCC , IO

Gate-emitter voltage
VCC

IO

VCC
90% IO

90% IO

10% IO

10% VCC

Collector-emitter voltage

10% IO

Collector current
td(on) tr

td(off)

tf

Figure 18. The Switching Waveforms of Gate-Emitter Voltage,

Collector-Emitter Voltage and Collector Current
MSc. Jorge Luis Rosero B. ( )

IGBT (Insulated Gate Bipolar Transistor)

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Basis Test Circuit for Gate Charge Measurement

Disparo
de un IGBT

MSc. Jorge Luis Rosero B. ( )

IGBT (Insulated Gate Bipolar Transistor)

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Driver de Disparo de un IGBT

With

the total g

Substituti

the avera

MSc. Jorge Luis Rosero B. ( )

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Aplicaciones de un IGBT

MSc. Jorge Luis Rosero B. ( )

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