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SSM40N03P

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Low gate charge

BVDSS

30V

Simple drive requirement

R DS(ON)

17m

Fast switching

ID
G
D

40A

TO-220

Description

Power MOSFETs from Silicon Standard provide the


designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.

G
S

The TO-220 package is widely preferred for commercial and


industrial applications and suited for low voltage applications such as
DC/DC converters and high efficiency switching circuits.

Absolute Maximum Ratings


Symbol
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Parameter

Rating

Units

VDS

Drain-Source Voltage

30

VGS

Gate-Source Voltage

20

ID @ TC=25C

Continuous Drain Current, VGS @ 10V

40

ID @ TC=100C

Continuous Drain Current, VGS @ 10V

30

IDM

Pulsed Drain Current

169

PD @ TC=25C

Total Power Dissipation

50

Linear Derating Factor

0.4

W/C

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol

Parameter

Value

Unit

Rthj-c

Thermal Resistance Junction-case

Max.

2.5

C/W

Rthj-a

Thermal Resistance Junction-ambient

Max.

62

C/W

Rev.2.01 7/01/2004

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SSM40N03P
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

30

BVDSS

Drain-Source Breakdown Voltage

BV DSS/ Tj

Breakdown Voltage Temperature Coefficient Reference to 25C, ID=1mA

0.037

V/C

RDS(ON)

Static Drain-Source On-Resistance

VGS=10V, ID=20A

14

17

VGS=4.5V, ID=16A

20

23

VDS=VGS, ID=250uA

VDS=10V, ID=20A

26

VDS=30V, VGS=0V

uA

Drain-Source Leakage Current (Tj=150 C)

VDS=24V,VGS=0V

25

uA

Gate-Source Leakage

VGS= 20V

100

nA

ID=20A

17

nC

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

VGS=0V, ID=250uA

IDSS

Drain-Source Leakage Current (Tj=25 C)


o

IGSS

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=24V

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=5V

10

nC

VDS=15V

7.2

ns

td(on)

Turn-on Delay Time

tr

Rise Time

ID=20A

60

ns

td(off)

Turn-off Delay Time

RG=3.3 ,VGS=10V

22.5

ns

tf

Fall Time

RD=0.75

10

ns

Ciss

Input Capacitance

VGS=0V

800

pF

Coss

Output Capacitance

VDS=25V

380

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

133

pF

Min.

Typ.

40

169

1.3

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Source-Drain Diode
Symbol
IS
ISM
VSD

Parameter

Test Conditions
VD=VG=0V , VS=1.3V

Continuous Source Current ( Body Diode )

Pulsed Source Current ( Body Diode )


2

Forward On Voltage

Tj=25C, IS=40A, VGS=0V

Max. Units

Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.

Rev.2.01 7/01/2004

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SSM40N03P

150

T C =25 C
150

V G =10V
V G =8.0V

V G =8.0V
ID , Drain Current (A)

ID , Drain Current (A)

T C =150 o C

V G =10V

V G =6.0V
100

V G =4.0V

50

100

V G =6.0V

50

V G =4.0V
V G =3.0V

V G =3.0V
0

0
0

V DS , Drain-to-Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

10

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1.80

28

I D = 2 0A

I D =20A

26

T C =25 o C

V G =10V

1.60

Normalized RDS(ON)

24

RDSON (m )

22

20

18

1.40

1.20

1.00

16
0.80
14

0.60

12
3

10

11

V GS (V)

50

100

150

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Rev.2.01 7/01/2004

-50

Fig 4. Normalized On-Resistance


vs. Junction Temperature

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SSM40N03P

50

60

45
50
40

40
30

PD (W)

ID , Drain Current (A)

35

25

30

20
20
15

10
10
5

0
25

50

75

100

125

150

50

100

150

T c ,Case Temperature ( C)

T c , Case Temperature ( C)

Fig 5. Maximum Drain Current vs.

Fig 6. Typical Power Dissipation

Case Temperature
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1000

Normalized Thermal Response (R thjc)

DUTY=0.5

100

ID (A)

10us
100us
10

1ms
10ms

0.2

0.1

0.1
0.05

PDM

0.02

SINGLE PULSE

t
0.01

Duty factor = t/T


Peak Tj = P DM x Rthjc + TC

T c =25 C
Single Pulse

100ms

1
1

10

100

0.01
0.00001

0.0001

V DS (V)

0.01

0.1

t , Pulse Width (s)

Fig 7. Maximum Safe Operating Area

Rev.2.01 7/01/2004

0.001

Fig 8. Effective Transient Thermal Impedance

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SSM40N03P

f=1.0MHz
10000

16

Id=20A
14

V D =20V

12

V D =24V
10

C (pF)

VGS , Gate to Source Voltage (V)

V D =16V

Ciss

1000

Coss
4

Crss
0

100
0

10

15

20

25

30

35

40

Q G , Total Gate Charge (nC)

13

17

21

25

29

V DS (V)

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

100

T j = 150 o C

10

VGS(th) (V)

IS (A)

T j = 25 o C
1

1
0.1

0.01
0.1

0.3

0.5

0.7

0.9

1.1

1.3

1.5

-50

Fig 11. Forward Characteristic of


Reverse Diode

Rev.2.01 7/01/2004

50

100

150

T j , Junction Temperature ( o C )

V SD (V)

Fig 12. Gate Threshold Voltage vs.


Junction Temperature

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SSM40N03P

VDS
90%

RD

VDS

TO THE
OSCILLOSCOPE
0.5x RATED VDS

RG

10%
+

S
10 V

VGS

VGS

td(on)

Fig 13. Switching Time Circuit

td(off) tf

tr

Fig 14. Switching Time Waveform

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VG
VDS

5V
0.8 x RATED VDS

G
S

QG

TO THE
OSCILLOSCOPE

QGS

QGD

VGS

1~ 3 mA

IG

ID

Charge

Fig 15. Gate Charge Circuit

Fig 16. Gate Charge Waveform

Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.01 7/01/2004

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