BUL128

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

SGS-THOMSON PREFERRED SALESTYPE

NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED

APPLICATIONS:

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

3
1

DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

V CES

Collector-Emitter Voltage (V BE = 0)

700

V CEO

Collector-Emitter Voltage (I B = 0)

400

V EBO

Emitter-Base Voltage (I C = 0)

Collector Current

Collector Peak Current (tp < 5 ms)

IC
I CM

Base Current

I BM

Base Peak Current (t p < 5 ms)

P t ot

Total Dissipation at T c = 25 C

T stg

St orage Temperature

IB

Tj

Max. Operating Junction Temperature

February 1998

70

-65 to 150

150

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BUL128
THERMAL DATA
R t hj-ca se
R t hj- amb

Thermal Resistance Junction-Case

Thermal Resistance Junction-Ambient

Max
Max

1.78
62.5

C/W
C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

I CES

Collector Cut-off
Current (V BE = -1.5 V)

V EBO

Emitter-Base Voltage

I E = 10 mA

Collector-Emitter
Sustaining Voltage

I C = 100 mA

Collector Cut-Off
Current (IB = 0)

V CE = 400 V

Collector-Emitter
Saturation Voltage

IC
IC
IC
IC

V CEO(sus)
I CEO
V CE(sat )

V BE(s at)

h FE

V CE = 700 V
V CE = 700 V

=
=
=
=

0.5 A
1 A
2.5 A
4 A

Min.

Typ .

Tj = 125 o C

L = 25 mH

IB
IB
IB
IB

=
=
=
=

I C = 0.5 A
IC = 1 A
I C = 2.5 A

IB = 0.1 A
IB = 0.2 A
IB = 0.5 A

DC Current G ain

I C = 10 mA
IC = 2 A
Group A
Group B

V CE = 5 V
VCE = 5 V

RESISTIVE LO AD
Storage Time
Fall T ime

V CC = 125 V
I B1 = 0.4 A
T p = 30 s
(see fig.2)

IC = 2 A
IB2 = -0.4 A

ts
tf

INDUCTIVE LOAD
Storage Time
Fall T ime

IC = 2 A
V BEoff = -5 V
V c la mp = 200 V
(see fig.1)

IB1 = 0.4 A
R BB = 0

A
A

V
V
250

0.7
1
1.5

V
V
V
V

1.1
1.2
1.3

V
V
V

0.5

10
14
25

ts
tf

Un it

100
500

400

0.1 A
0.2 A
0.5 A
1 A

Base-Emitter
Saturation Voltage

Max.

28
40

0.2

3
0.4

s
s

0.6
0.1

1
0.2

s
s

1.5

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). SGS-THOMSON reserves the right to ship either groups
according to production availability. Please contact your nearest SGS THOMSON MICROELECTRONICS sales office for delivery details.

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BUL128
Safe Operating Areas

Derating Curve

DC Current Gain

DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

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BUL128
Inductive Fall Time

Inductive Storage Time

Resistive Fall Time

Resistive Load Storage Time

Reverse Biased SOA

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BUL128
Figure 1: Inductive Load Switching Test Circuit.

1) Fast electronic switch

2) Non-inductive Resistor
3) Fast recovery rectifier

Figure 2: Resistive Load Switching Test Circuit.

1) Fast electronic switch

2) Non-inductive Resistor

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BUL128

TO-220 MECHANICAL DATA

mm

DIM.
MIN.

TYP.

inch
MAX.

MIN.

TYP.

MAX.

4.40

4.60

0.173

0.181

1.23

1.32

0.048

0.051

2.40

2.72

0.094

D1

1.27

0.107
0.050

0.49

0.70

0.019

0.027

0.61

0.88

0.024

0.034

F1

1.14

1.70

0.044

0.067

F2

1.14

1.70

0.044

0.067

4.95

5.15

0.194

0.203

G1

2.4

2.7

0.094

0.106

H2

10.0

10.40

0.393

0.409

L2

16.4

0.645

L4

13.0

14.0

0.511

0.551

L5

2.65

2.95

0.104

0.116

L6

15.25

15.75

0.600

0.620

L7

6.2

6.6

0.244

0.260

L9

3.5

3.93

0.137

0.154

DIA.

3.75

3.85

0.147

0.151

P011C
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BUL128

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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