UniKL BMI

Week 8 (Bipolar Junction Transistor)

BIPOLAR JUNCTION TRANSISTOR

1.0

INTRODUCTION

In practice, it is a three terminal device in which current flowing between two terminals can
be controlled by a signal on the third terminal.
That facilities means that a transistor has properties that enables to be used as an electronic
switch and an amplifier.
There are many types of transistor available, but they can effectively be grouped into two
families:
a) Bipolar Junction Transistor (BJT)
b) Unipolar Junction Transistor (UJT)
1.1

PHYSICAL STRUCTURE AND CHARACTERISTICS

Bipolar junction transistor (BJT) is constructed with three doped semiconductor regions
separated by two pn junctions as shown in figure .
The three regions are called emitter, base and collector.
Voltage between 2 terminals controls current through the 3rd terminal.
Two types of bipolar transistors are npn and pnp.
i)

NPN consists of 2 N-type region separated by a P-type.

ii)

PNP consists of 2 P-type separated by an N-type.

Figure 1.1.1 : Transistor Structures and Symbols.

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The pn junction joining the base region and the emitter region is called the baseemitter junction.

The pn junction joining the base region and the collector region is called the basecollector junction.

A wire lead connects to each of the three regions as shown.

These lead are labeled E, B and C for emitter, base and collector, respectively.

The base region is lightly doped and very narrow.

The emitter region is heavily doped.

The collector region is moderately doped.

Figure 1.1.2 : BJT Junctions.

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1.1.2 BASIC TRANSISTOR OPERATION

BE junction
depletion region

Emitter (n)

BC junction
depletion region

Base (p)

Collector (n)

IE

IC

Forward bias
BE junction

IB

Reverse bias
BE junction

Figure 1.1.3 : Electron flowing in BJT

The emitter region is heavily doped.

The collector region is moderately doped.

Forward bias from base to emitter narrows the BE depletion region.

Reverse bias from base to collector widen the BC depletion region.

The heavily doped n-type emitter region is teeming with conduction band (free
electron) that easily diffuse through the forward biased BE junction into the p-type base
region.

The base region is lightly doped and very thin so that is has a very limited number of
holes.

Only a small percentage of electrons flowing through the BE junction can combine with
the available hole in the base.

Few recombined electron flow out of the base lead as valence electrons, forming the
small base current.

Most of the electrons flowing from the emitter into the thin, lightly doped base region
do not recombine but diffuse into the BC depletion region.

Once in this region they are pulled across the BC depletion region into the collector
region by the attraction of the collector supply voltage.

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Week 8 (Bipolar Junction Transistor)

This forms the collector current.

1. 1. 2 TRANSISTOR CURRENT AND VOLTAGES

Collector

IB
Base

IC
VCE

+
VBE -

IE

Emitter
Figure 1.1.4 : Current in the BJTransistor (NPN)
By Kirchhoffs current law;

I E IC I B

Equation 1

The current gain dc of the transistor;

dc

IC
IB

Equation 2

The ratio of the collector current to the emitter current;

dc
Relationship of

IC
IE

Equation 3

dc and dc

I E IC I B

Dividing the Equation 1 by IC;

IE
I
I
C B
IC
IC IC

Equation 4

Substitute Equation 2 and Equation 3 into Equation 4

1
1
1
dc
dc
Rearrange the above expression;

dc

dc
1 dc

Equation 5

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dc
and

dc
1 dc

Equation 6

1.1.3 TRANSISTOR BIASING

Reversed
Biased

Forward
Biased
Figure 1.1.5 : Forward Reverse Biased of a BJT.
1. Base Emitter Junction ~ Forward Biased
Emitter connect to negative supply
2. Base Collector Junction ~ Reverse Biased
Collector connect to positive supply
1.1.3.1. General Bias Modes
1.
2.
3.
4.

Forward active mode

Cut-off mode
Saturation mode
Reverse active mode

amplifier
switching ( OFF )
switching ( ON )

1. Forward active mode

base emitter junction forward bias , VBE > 0
base collector junction reverse bias , VBC < 0
2. Cut off mode
base emitter junction reverse bias , VBE < 0
base collector junction reverse bias , VBC < 0
3. Saturation mode
base emitter junction forward bias , VBE > 0
base collector junction forward bias , VBC > 0
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Week 8 (Bipolar Junction Transistor)

4. Reverse active mode

base emitter junction reverse bias , VBE < 0
base collector junction forward bias , VBC > 0
1.1.4 TRANSISTOR CONFIGURATION CIRCUIT.

1.1.4.1 Common Emitter Configuration

Figure 1.1.6(a) : NPN Transistor

Figure 1.1.6

(b) : PNP Transistor

When a transistor is connected with the emitter as the common or grounded terminal, it
is called a Common Emitter Configuration.
Common Emitter connections for both NPN and PNP transistors are shown at above,
with conventional current directions indicated.

Input Base
Output Collector
Ground - Emitter

Ai

IC

IB

Av

VCE
VBE

Current gain,

Voltage gain,
Power gain,

Ap Av Ai

The ratio of the collector current IC to the base current IB is the dc current gain,

dc of the transistor.
dc

IC
IB

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Sometime it called static forward current transfer ratio for common emitter and is
usually designated hFE on transistor data sheets.

dc range from 20 to 200 or higher.

Figure 1.1.7 : Input Characteristic for Common Emitter configuration

Figure 1.1.8 : Output Characteristic for Common Emitter configuration

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1.1.4.2

Week 8 (Bipolar Junction Transistor)

Common Base Configuration

Figure 1.1.9 (f) : NPN Transistor

Figure 1.1.9 (g) : PNP Transistor

When a transistor is connected with the base as the common terminal, it is called a
common-base connection.
Common Base connections for both NPN and PNP transistors are shown at above,
with conventional current directions indicated.

Input Emitter
Output Collector
Ground - Base

IC
I E . This
Since IE is the input current and IC is the output current, the current gain is
ratio is the dc alpha,

dc

dc
of the transistor.

IC
IE

Sometime it called static forward current transfer ratio for common base and is usually
designated hFB on transistor data sheets.
Because IC IE, the value of

dc is near unity. Actual values range from about 0.95 to 0.99

or greater.

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Figure 1.1.10 : Output Characteristic for Common Base configuration

1.1.4.3

Common Collector Configuration

Figure 1.1.11 : NPN Transistor

When a transistor is connected with the collector as the common terminal, it is

called a common-collector connection.

Common Collector connections for both NPN transistors are shown at above, with
conventional current directions indicated.

Current Gain
Input Base
Output Emitter
Ground - Collector

IE
IB
Since IB is the input current and IE is the output current, the current gain is
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1.2 DC OPERATION
The zero signal values of IC and VCE in a transistor circuit are called as Operating Point.

Figure 1.2.1 : Transistor With Zero Signal Input

When there is no signal applied to the input of a transistor, the transistor is made to carry
d.c. collector current Ic and d.c collector-emitter voltage VCE . These d.c. values (zero
signal values) are known as Operating Point. The operating point is also called the
Quiescent (silent/quiet) point or Q point.
When signal is applied to the input of the transistor, current will pass through and voltage
across the transistor will vary about this point.
Current and Voltages analysis
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Figure 1.2.3 : Transistor Current and Voltages

VBB forward-biases the base-emitter junction and Vcc reverse-biases the base-collector
junction. When base-emitter junction is forward-biases, it is like a forward-biased diode
and has a nominal voltage drop of
VBE

0.7 V

Considering the loop at the input side (apply KVL),

VBB - VBE - IBRB

IBRB

= VBB - VBE

and

IB

= VBB - VBE
RB

Considering the loop at the output side (apply KVL),

Vcc - VCE IcRc

VCE

= Vcc IcRc

or

IcRc

= Vcc VCE

and

Ic

Vcc VCE
Rc

DC Load Line

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Week 8 (Bipolar Junction Transistor)

DC load line is the line of output characteristic of a transistor circuit which gives the value
of Ic and VCE corresponding to the d.c. condition.

Figure 1.2.4 : Basic Transistor Circuit

For the given circuit, VCE at any given time is
VCE

= Vcc IcRc

To Plot the dc Load Line

a) A point is selected at maximum VCE, i.e. Ic = 0 (During Cutoff)
VCE
VCE(cutoff)

= Vcc IcRc
= VCC

b) Another point is selected at maximum Ic, i.e. VCE = 0 (During Saturation)

VCE

= Vcc IcRc

Vcc

= VCE + IcRc

Vcc

Ic(sat)

IcRc

= Vcc/Rc

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Week 8 (Bipolar Junction Transistor)

Ic

Vcc/Rc
Q-point
ICQ

VCE
VCEQ

VCE = VCC

Figure 1.2.5 : Dc Load Line

1.3

SWITCHING CIRCUITS

Two main applications of Transistors are as a Switching Circuits and Linear Amplifier.
1.3.1

TRANSISTOR AS A SWITCH

When used as an electronic switch, a transistor is normally operated alternately in

cutoff(off) and saturation(on).
Digital circuit make used of the switching characteristics of transistors.
a) During Cutoff
Since VBB is equal to zero, IB will be equal to zero. These causes both BE and BC junctions
to be reverse biased. The transistor is now in cutoff region. In this condition, there is,
ideally, an open between collector and emitter as shown in the equivalent circuit. All
currents are zero and VCE = VCC
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Week 8 (Bipolar Junction Transistor)

VCE (cutoff ) = VCC

Figure 1.3.2a : Ideal Switching Action of a Transistor (cutoff)

b) During Saturation
The transistor is in saturation region because both BE and BC junctions are forward biased.
VBB should be high enough to ensure the base current is large enough to cause the collector
current to reach its saturation. In this condition, there is, ideally, a short between collector
and emitter as shown in the equivalent circuit.
The formula for collector saturation current is

Since VCE(sat) is very small in compared to VCC it can usually be neglected. The minimum
value of base current needed to produce saturation is

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IB should be significantly greater than IB(min) to keep the transistor well into saturation.

Figure 1.3.2b : Ideal Switching Action of a Transistor (saturation)

c) A Simple Application of A Transistor Switch

The transistor in Figure 1.3.2c below is used to turn the LED on and off. For example, a
square wave input voltage with a period of 2s is applied to the input as indicated. When the
square wave is at 0 V, the transistor is in the cutoff. Since there is no collector current, the
LED does not emit light. When the square wave goes to its high level, the transistor
saturates. This forward biased the LED, and the resulting collector current through the
LED causes it to emit light. As the result, a blinking LED will be obtained. The LED will
be on for 1 sec and off for 1 sec.

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Week 8 (Bipolar Junction Transistor)

Figure 1.3.2c : A transistor is used to Switch an LED on and off

1.4

DC BIASING TYPES OF BIPOLAR JUNCTION TRANSISTOR

There are four general types of BJT biasing types

a)

Voltage Divider Bias

b)

Collector Feedback Bias

c)

Base Bias

d)

Emitter bias

1.4.1

VOLTAGE DIVIDER BIAS CIRCUIT

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Figure 1.4.1 : Voltage Divider Bias Circuit

There are 2 methods of analysis
a) Exact analysis or Thevenins method
b) Approximate Method
1.4.1.1

Exact analysis or Thevenins Method.

Consider the loop at the base

Apply Thevenins theorem

R1

VCC

R2

RE

R1
Short all supply and find RTH
RTH = R1 x R2
R1 + R 2

R2

RTH

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Week 8 (Bipolar Junction Transistor)

Determine VTH
VTH =

R1

R2 x VCC
R1 + R 2

VCC
VTH

R2

Redraw the Thevenins equivalent circuit

(TEC)

RTH

Knowing that,

IE = IC + IB and IC= IB

VTH

Therefore,

RE

IE = IB + I B
IE = IB ( +1)

VTH - IBRTH - VBE - IERE = 0

R- TH

VTH - VBE = IERE + IBRTH

+
VBE +
-

VTH

+
RE
-

IE = IB ( +1)
VTH - VBE = IB ( +1) RE + IBRTH
VTH - VBE = IB [ ( +1) RE + RTH ]
IB =

VTH - VBE
[ ( +1) RE + RTH ]

Consider the collector-emitter loop

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Week 8 (Bipolar Junction Transistor)

+
+
VCE
+
RE
-

+
-

VCC

IC = IB
VCC ICRC VCE IERE = 0
VCC VCE = IERE + ICRC
VCC VCE = IERE + ICRC
assume IE IC
VCC VCE = ICRE + ICRC
VCE = VCC IC (RE + RC)

and
VE = IERE
VCE = VC - VE
VBE = VB VE
VC = VCC ICRC

1.4.1.2

Approximate Method

Can only be apply if RE 10R2

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Week 8 (Bipolar Junction Transistor)

VB

Consider the loop at the base :

VB VBE - IERE = 0
IE = VB VBE
RE
For the loop at the output side,
VCC ICRC VCE IERE = 0
VCC ICRC IERE = VCE

assume IE IC

VCE = VCC IC (RE + RC)

Load Line Analysis

The collector-emitter loop equation that defines the load line
VCE = VCC IC(RC + RE)
At cut-off level, (when IC = 0 mA)
VCE = VCC
At saturation level, (when VCE = 0 V)

IC
VCC
RC + RE
ICQ

VCC = IC (RC + RE)

IC =
1.4.2

Q - point

VCE

VCC
RC + RE

VCEQ

VCC

COLLECTOR FEEDBACK BIAS

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Figure 1.4.2 : Collector Feedback Circuit

DC Analysis
Consider the RB branch

IB

IB

RB
IB

RB

IC
DC

equation 2

VC = VCC - ICRC

equation 3

IB

Consider the loop at the output

RC

Insert eq. 2
ICRC
VC

VCC

equation 1

and

VC
VBE

VB = VBE

VC VBE
RB

IB

and

eq. 3

into

eq. 1

VCC I C R C VBE
RB

IC
VCC I C R C VBE
DC
RB

RC VCC VBE
DC

I C

IC

1.4.3

VCC VBE
RB
RC
DC

BASE BIAS/EMITTER STABILIZED BIAS CIRCUITS.

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VCC

RB

RC

RE

Figure 1.4.3.1 : Emitter Stabilized Bias Circuit

DC Analysis.
Base Emitter Loop
+

RB

Knowing that,
VBE

+
-

IE = I C + I B

+
RE
-

VCC

and

RE

I C = IB

Therefore,
IE = IB + I B
IE = IB ( +1)

VCC - IBRB - VBE - IERE = 0

VCC - VBE = IERE - IBRB

IB =

IE = IB ( +1)

VCC - VBE
[ ( +1) RE + RB ]

VCC - VBE = IB ( +1) RE + IBRB

VCC - VBE = IB [ ( +1) RE + RB ]

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Collector Emitter Loop

+
RC
-

+
VCE
+
RE
-

IC = IB

and

VCC

assume that IE=IC

VE = IERE

VCC ICRC VCE - IERE = 0

VCC ICRC IERE = VCE

VCE = VC - VE

VCC ICRC ICRE = VCE

VBE = VB VE
VC = VCC ICRC

VCC IC (RC + RE) = VCE

VCE = VCC IC (RE + RC)

Load Line Analysis

The collector-emitter loop equation that defines the load line
VCE = VCC IC(RC + RE)
At cut-off level, (when IC = 0 mA)
VCE = VCC
At saturation level, (when VCE = 0 V)

IC
VCC
RC + RE
ICQ

VCC = IC(RC + RE)

IC =

Q - point

VCC
RC + RE
VCEQ

1.4.4

VCC

VCE

EMITTER BIAS
VCC

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Week 8 (Bipolar Junction Transistor)

RC

RB
RE
-VEE
Figure 1.4.4.1 : Emitter Bias Circuit
DC Analysis.
Base Emitter Loop
VEE + VRB + VBE + VRE = 0
VEE + IBRB + VBE + IERE = 0
IBRB + IERE = - VEE - VBE
RB

RE

IC = IB
IC I E

IB

IC IE

Substitute into equation

IE
RB + IERE = - VEE - VBE

RB
IE( + RE) = - VEE - VBE
IE =

-VEE - VBE
[ RE + RB/ ]

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