UNISONIC TECHNOLOGIES CO.

, LTD
7N65

Power MOSFET

7 Amps, 650 Volts

N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 7N65 is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.

TO-220F

FEATURES
* RDS(ON) = 1.35 @VGS = 10 V
* Ultra low gate charge ( typical 30 nC )
* Low reverse transfer capacitance ( CRSS = typical 18 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

*Pb-free plating product number: 7N65L

SYMBOL
2.Drain

1.Gate

3.Source

ORDERING INFORMATION
Normal
7N65-TF3-T

Order Number
Lead Free Plating
7N65L-TF3-T

Package
TO-220F

Pin Assignment
1
2
3
G
D
S

Packing
Tube

7N65L-TF3-T
(1)Packing Type

(1) T: Tube

(2)Package Type

(2) TF3: TO-220F

(3)Lead Plating

(3) L: Lead Free Plating, Blank: Pb/Sn

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Power MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified)

PARAMETER

SYMBOL
VDSS
VGSS

RATINGS
UNIT
650
V
30
V
TC = 25C
7.0
A
Continuous Drain Current
ID
TC = 100C
4.7
A
Drain Current Pulsed (Note 1)
IDM
28
A
Avalanche Energy, Single Pulsed (Note 2)
EAS
530
mJ
Avalanche Energy, Repetitive, Limited by TJMAX
EAR
14.2
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.5
V/ns
Power Dissipation (TC = 25C)
PD
142
W
Junction Temperature
TJ
+150

Storage Temperature
TSTG
-55 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Drain-Source Voltage
Gate-Source Voltage

THERMAL DATA
PARAMETER

SYMBOL
JA
JC

Junction-to-Ambient
Junction-to-Case

MIN

TYP

MAX
62.5
0.88

UNIT
C/W
C/W

ELECTRICAL CHARACTERISTICS (TC =25, unless otherwise specified)

PARAMETER
OFF Characteristics
Drain-Source Breakdown Voltage

SYMBOL
BVDSS

Drain-Source Leakage Current

Gate-Source Leakage Current

IDSS
Forward
Reverse

Breakdown Voltage Temperature

Coefficient
ON Characteristics
Gate Threshold Voltage
Drain-Source ON-State Resistance
Forward Transconductance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

IGSS

VGS = 0 V, ID = 250 A
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V

MIN TYP MAX UNIT

650
1
1
100
-100

BVDSS/TJ ID = 250 A, Referenced to 25C

VGS(TH)
RDS(ON)
gFS
CISS
COSS
CRSS
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QDD

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TEST CONDITIONS

VDS = VGS, ID = 250 A

VGS = 10 V, ID = 3.5 A
VDS = 40 V, ID = 3.5 A (Note 4)

VDS = 25 V, VGS = 0 V, f = 1MHz

VDD = 325V, ID = 7.0 A

(Note 4, 5)

VDS= 520V, ID= 7.0A, VGS= 10 V

(Note 4, 5)

0.67
2.0

V
A
A
nA
nA
V/

4.0
1.35

1200 1600
150 190
18
25

pF
pF
pF

1
8.0

35
79
80
52
30
6.5
13

80
165
160
120

ns
ns
ns
ns
nC
nC
nC

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ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
Source- Drain Diode Ratings and Characteristics
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS =7.0 A
Maximum Continuous Drain-Source
IS
Diode Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
tRR
VGS = 0 V, IS = 7.0 A,
dIF/dt = 100 A/s (Note 4)
Reverse Recovery Charge
QRR
Notes: 1. Repetitive Rating : Pulse width limited by TJ
2. L = 19.5mH, IAS = 7.0A, VDD = 50V, RG = 0 , Starting TJ = 25C
3. ISD 7.0A, di/dt 100A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

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MIN

TYP MAX UNIT

320
2.4

1.4

7.0

28

A
ns
C

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TEST CIRCUITS AND WAVEFORMS

D.U.T.

VDS
+
-

RG
Driver
* dv/dt controlled by RG
* I SD controlled by pulse period
* D.U.T.-Device Under Test

Same Type
as D.U.T.

VGS

VDD

Fig. 1A Peak Diode Recovery dv/dt Test Circuit

VGS
(Driver)

P.W.

Period

D=

P. W.
Period

VGS= 10V

I FM, Body Diode Forward Current

ISD
(D.U.T.)

di/dt
IRM
Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.)

VDD

Body Diode

Forward Voltage Drop

Fig. 1B Peak Diode Recovery dv/dt Waveforms

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TEST CIRCUITS AND WAVEFORMS (Cont.)

RL

VDS

VDS

90%

VDD

VGS
RG

VGS

D.U.T.

10V

10%
t D(ON )

Pulse Width 1s

tD (OFF)
tF

tR

Duty Factor 0.1%

Fig. 2A Switching Test Circuit

Same Type
as D.U.T.

50k
0.2F

Fig. 2B Switching Waveforms

QG

10V

0.3F
VDS

QGS

QGD

VGS
DUT
VG

1mA

Charge

Fig. 3A Gate Charge Test Circuit

Fig. 3B Gate Charge Waveform

L
VDS
BVDSS

RD

10V

VDD
D.U.T.

tp

Fig. 4A Unclamped Inductive Switching Test Circuit

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IAS

tp

Time

Fig. 4B Unclamped Inductive Switching Waveforms

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Breakdown Voltage Variation vs.

Temperature
1.2
1.1
1.0
Note:
1. VGS=0V
2. ID=250A

0.9

0.8
-100 -50 0 50 100 150 200
Junction Temperature, T J ()

On-Resistance Junction Temperature

Drain-Source On-Resistance,
RDS(ON) (Normalized)

Drain-Source Breakdown Voltage,

BVDSS (Normalized)

TYPICAL CHARACTERISTICS

3.0
2.5
2.0
1.5

0.5

0.0
-100 -50 0 50 100 150 200
Junction Temperature, T J ()

Maximum Drain Current vs. Case

Temperature

Maximum Safe Operating Area

100 s

10

1ms
10 ms

0.1
1

DC
Notes:
1 . T J=25
2 . T J=150
3 . Single Pulse

10

DS(ON)

Drain Current, I D (A)

Drain Current, ID (A)

Operation in This Area is Limited by R

100

Note:
1. VGS =10V
2. I D=3.5A

1.0

6
4
2
0

1000

25

Drain-Source Voltage, VDS (V)

On-State Characteristics

0.1

Notes:
1. 250s Pulse Test
2. T C=25

0.1
1
10
Drain-to-Source Voltage, VDS (V)

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Transfer Characteristics

Drain Current, I D (A)

Drain Current, I D (A)

10

VGS
Top: 10V
8V
7.5V
7V
6.5V
6V
5.5V
Bottorm:5.5V

50
75 100 125 150
Case Temperature, TC ()

10
25
1

0.1

150
Notes:
1. VDS =50 V
2. 250 s Pulse Test

2
4
6
8
10
Gate-Source Voltage, VGS (V)

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TYPICAL CHARACTERISTICS(Cont.)

On State Current vs. Allowable Case

Temperature

2.5
VGS =20V

2.0

VGS=10V

1.5
1.0
0.5
0

Note: TJ=25

5 10 15 20 25
Drain Current, I D (A)

Reverse Drain Current, IDR (A)

Drain-Source On-Resistance,
RDS(ON) (ohm)

On-Resistance Variation vs. Drain

Current and Gate Voltage

10
150
25
1
Notes:
1. VGS=0V
2. 250s Test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Source-Drain Voltage, VSD (V)

Capacitance Characteristics
(Non-Repetitive)
2000

12

Gate-Source Voltage, VGS (V)

C iss=C gs +C gd (C ds=shorted )
C os s=Cds +Cgd Crss=C gd

1600

Capacitance (pF)

Gate Charge Characteristics

Ciss

1200

Coss

800
400

Notes:
1. V GS =0V
2. f = 1MHz

Crss

0
0.1

10

VDS=520V
VDS=325V

VDS =130V

6
4
2
Note: ID=7A

0
1

10

10 20

30

40

50

60

70

Total Gate Charge, QG (nC)

Drain-SourceVoltage, VDS (V)

Transient Thermal Response

Curve
Thermal Response, JC (t)

0.1
Notes :
1. JC (t) = 0. 88/W Max.
2. Duty Factor , D=t1/t2
3.TJM-TC=P DMJC (t)

0.01
1E-5

1E-4 1E-3 0.01 0.1

10

Square Wave Pulse Duration, t1 (sec)

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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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