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D2

PA
K

PSMN4R8-100BSE

N-channel 100 V 4.8 m standard level MOSFET in D2PAK


12 April 2013

Product data sheet

1. General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part of
NXP's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hotswap" controllers - robust enough to withstand substantial inrush currents during turn on,
whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in
continued use. Ideal for telecommunication systems based on a 48 V backplane / supply
rail.

2. Features and benefits

Enhanced forward biased safe operating area for superior linear mode operation
Very low RDS(on) for low conduction losses

3. Applications

Electronic fuse
Hot swap
Load switch
Soft start

4. Quick reference data


Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj 25 C; Tj 175 C

100

IDM

peak drain current

pulsed; Tmb = 25 C; tp 10 s; Fig. 4

707

Ptot

total power dissipation

Tmb = 25 C; Fig. 2

405

VGS = 10 V; ID = 25 A; Tj = 25 C;

4.1

4.8

Static characteristics
RDSon

drain-source on-state
resistance

Fig. 12

Dynamic characteristics
QGD
QG(tot)

gate-drain charge

VGS = 10 V; ID = 25 A; VDS = 50 V;

59

83

nC

total gate charge

Fig. 14; Fig. 15

196

278

nC

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK


Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VGS = 10 V; Tj(init) = 25 C; ID = 120 A;

542

mJ

Avalanche Ruggedness
EDS(AL)S

non-repetitive drainsource avalanche


energy

Vsup 100 V; RGS = 50 ; unclamped;


Fig. 3

5. Pinning information
Table 2.

Pinning information

Pin

Symbol Description

Simplified outline

gate

drain[1]

source

mb

mounting base; connected to


drain

Graphic symbol

mb

mbb076

2
3

D2PAK (SOT404)
[1]

It is not possible to make connection to pin 2

6. Ordering information
Table 3.

Ordering information

Type number

Package

PSMN4R8-100BSE

Name

Description

Version

D2PAK

plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404


(one lead cropped)

7. Marking
Table 4.

Marking codes

Type number

Marking code

PSMN4R8-100BSE

PSMN4R8-100BSE

8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

Tj 25 C; Tj 175 C

100

VDGR

drain-gate voltage

Tj 25 C; Tj 175 C; RGS = 20 k

100

VGS

gate-source voltage

-20

20

PSMN4R8-100BSE

Product data sheet

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK


Symbol

Parameter

Conditions

ID

drain current

VGS = 10 V; Tj = 25 C; Fig. 1
VGS = 10 V; Tmb = 100 C; Fig. 1

Min

Max

Unit

[1]

120

[1]

120

IDM

peak drain current

pulsed; tp 10 s; Tmb = 25 C; Fig. 4

707

Ptot

total power dissipation

Tmb = 25 C; Fig. 2

405

Tstg

storage temperature

-55

175

Tj

junction temperature

-55

175

Tsld(M)

peak soldering temperature

260

120

Source-drain diode
IS

source current

Tmb = 25 C

ISM

peak source current

pulsed; tp 10 s; Tmb = 25 C

707

VGS = 10 V; Tj(init) = 25 C; ID = 120 A;

542

mJ

[1]

Avalanche Ruggedness
EDS(AL)S

non-repetitive drain-source
avalanche energy

Vsup 100 V; RGS = 50 ; unclamped;


Fig. 3

[1]

Continuous current limited by package.


003aaj964

200
ID
(A)

03aa16

120
Pder
(%)

160

80

(1)

120

80
40

40

50

100

150

Tmb ( C)

(1) Capped at 120A due to package


Fig. 1.

Continuous drain current as a function of


mounting base temperature

PSMN4R8-100BSE

Product data sheet

200

Fig. 2.

100

150

Tmb (C)

200

Normalized total power dissipation as a


function of mounting base temperature

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK

IAL
(A)

003aaj965

103

102

(1)

(2)

10

1
10-3

Fig. 3.

10-2

10-1

1
tAL (ms)

10

Single pulse avalanche rating; avalanche current as a function of avalanche time

003aaj966

104
ID
(A)
103
Limit RDSon= V DS / ID
tp =10 s

102

100 s
1 ms

10
DC

10 ms
100 ms

10-1
10-1

Fig. 4.

10

102

103

VDS (V)

Safe operating area; continuous and peak drain currents as a function of drain-source voltage

9. Thermal characteristics
Table 6.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-mb)

thermal resistance
from junction to
mounting base

Fig. 5

0.3

0.37

K/W

Rth(j-a)

thermal resistance
from junction to
ambient

Minimum footprint; mounted on a


printed circuit board

50

K/W

PSMN4R8-100BSE

Product data sheet

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK

003aaj353

1
Zth(j-mb)
(K/W)
10

= 0.5

-1

0.2
0.1
0.05

10

-2

0.02

tp

single shot

10-3
10-6

Fig. 5.

10-5

10-4

10-3

10-2

tp
T

t
T

10-1

tp (s)

Transient thermal impedance from junction to mounting base as a function of pulse duration

10. Characteristics
Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source
breakdown voltage

ID = 250 A; VGS = 0 V; Tj = 25 C

100

ID = 250 A; VGS = 0 V; Tj = -55 C

90

gate-source threshold
voltage

ID = 1 mA; VDS = VGS; Tj = 25 C;

gate-source threshold
voltage

ID = 1 mA; VDS = VGS; Tj = 175 C;

4.6

VDS = 100 V; VGS = 0 V; Tj = 25 C

0.16

10

VDS = 100 V; VGS = 0 V; Tj = 175 C

500

VGS = -20 V; VDS = 0 V; Tj = 25 C

10

100

nA

VGS = 20 V; VDS = 0 V; Tj = 25 C

10

100

nA

VGS = 10 V; ID = 25 A; Tj = 25 C;

4.1

4.8

8.7

13

0.43

0.85

1.7

Static characteristics
V(BR)DSS

VGS(th)
VGSth

Fig. 10; Fig. 11


Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 C;
Fig. 11

IDSS

IGSS

RDSon

drain leakage current

gate leakage current

drain-source on-state
resistance

Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 C;
Fig. 13; Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 C;
Fig. 12; Fig. 13

RG

gate resistance

PSMN4R8-100BSE

Product data sheet

f = 1 MHz

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK


Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ID = 25 A; VDS = 50 V; VGS = 10 V;

196

278

nC

ID = 0 A; VDS = 0 V; VGS = 10 V

166.9

234

nC

gate-source charge

ID = 25 A; VDS = 50 V; VGS = 10 V;

40

56

nC

QGD

gate-drain charge

Fig. 14; Fig. 15

59

83

nC

VGS(pl)

gate-source plateau
voltage

ID = 25 A; VDS = 50 V; Fig. 14; Fig. 15

4.3

Ciss

input capacitance

VDS = 50 V; VGS = 0 V; f = 1 MHz;

10665 14400 pF

Coss

output capacitance

Tj = 25 C; Fig. 16

674

910

pF

Crss

reverse transfer
capacitance

459

643

pF

td(on)

turn-on delay time

VDS = 50 V; RL = 2 ; VGS = 10 V;

41

61.5

ns

tr

rise time

RG(ext) = 4.7

65

97.5

ns

td(off)

turn-off delay time

127

190.5

ns

tf

fall time

69

103.5

ns

Dynamic characteristics
QG(tot)

total gate charge

Fig. 14; Fig. 15

QGS

Source-drain diode
VSD

source-drain voltage

IS = 25 A; VGS = 0 V; Tj = 25 C; Fig. 17

0.79

1.2

trr

reverse recovery time

IS = 25 A; dIS/dt = -100 A/s; VGS = 0 V;

72

94

ns

recovered charge

VDS = 50 V

227

296

nC

Qr

003aaj968

120

10 6

ID
(A)

5.5

003aaj969

20
RDSon
(m )
15

80
5
10
40
4.5

VGS (V) = 4
0

Fig. 6.

3 V (V) 4
DS

Output characteristics; drain current as a


Fig. 7.
function of drain-source voltage; typical values

PSMN4R8-100BSE

Product data sheet

12 V (V) 16
GS

Drain-source on-state resistance as a function


of gate-source voltage; typical values

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK

003aaj970

200

003aaj971

300
ID
(A)

gfs
(S)
160

240

120

180

80

120

40

60

0
0

Fig. 8.

Tj = 25 C

Tj = 150 C

60

120

180

240

ID (A)

300

Forward transconductance as a function of


drain current; typical values

Fig. 9.

03aa35

10- 1
ID
(A)

min

10- 2

typ

10- 5

VGS (V)

0
- 60

Fig. 10. Sub-threshold drain current as a function of


gate-source voltage

PSMN4R8-100BSE

Product data sheet

003aad280

VGS(th)
(V)

max

10- 4

6 V (V) 8
GS

Transfer characteristics; drain current as a


function of gate-source voltage; typical values

10- 3

10- 6

max

typ

min

60

120

Tj (C)

180

Fig. 11. Gate-source threshold voltage as a function of


junction temperature

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK

003aaj974

30
4.5

RDSon
(m )

003aad774

3.2

5.5

a
2.4

20
1.6

10
6

0.8

V GS (V) = 10
0
0

40

80

ID (A)

0
-60

120

Fig. 12. Drain-source on-state resistance as a function


of drain current; typical values

60

120

ID

003aaj976

VGS(pl)

20 V
80 V

VGS(th)
VGS

VDS = 50V

4
QGS1

180

Fig. 13. Normalized drain-source on-state resistance


factor as a function of junction temperature

10
VGS
(V)

VDS

Tj (C)

QGS2

QGS

QGD
QG(tot)

2
003aaa508

Fig. 14. Gate charge waveform definitions

50

100

150

200
250
Q G (nC)

Fig. 15. Gate-source voltage as a function of gate


charge; typical values

PSMN4R8-100BSE

Product data sheet

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK

003aaj977

105

003aaj978

120
IS
(A)

C
(pF)
C iss

104

80

C oss

103

Tj = 175 C

40

Tj = 25 C

C rss
102

0
10-1

10

2
VDS (V) 10

0.3

0.6

0.9 V (V) 1.2


SD

Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source current as a function of source-drain
as a function of drain-source voltage; typical
voltage; typical values
values

PSMN4R8-100BSE

Product data sheet

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK

11. Package outline


Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)

SOT404

A
A1

E
mounting
base

D1

D
HD

2
Lp
1

b2

b
e

5 mm
scale

Dimensions (mm are the original dimensions)


Unit
mm

max
nom
min

A1

b2

4.5

1.40 0.85 1.45 0.64

4.1

1.27 0.60 1.05 0.46

D1

11

1.6

10.3

1.2

9.7

e
2.54

HD

Lp

15.8

2.9

2.6

14.8

2.1

2.2
sot404_po

Outline
version

References
IEC

JEDEC

JEITA

European
projection

Issue date
06-03-16
13-02-25

SOT404

Fig. 18. Package outline D2PAK (SOT404)


PSMN4R8-100BSE

Product data sheet

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK


In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.

12. Legal information


12.1 Data sheet status

Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.

Document
status [1][2]

Product
status [3]

Objective
[short] data
sheet

Development This document contains data from


the objective specification for product
development.

Preliminary
[short] data
sheet

Qualification

This document contains data from the


preliminary specification.

Product
[short] data
sheet

Production

This document contains the product


specification.

[1]
[2]
[3]

Definition

Right to make changes NXP Semiconductors reserves the right to


make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Please consult the most recently issued document before initiating or


completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.

12.2 Definitions
Preview The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.

12.3 Disclaimers
Limited warranty and liability Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.

PSMN4R8-100BSE

Product data sheet

Suitability for use NXP Semiconductors products are not designed,


authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customers own
risk.
Quick reference data The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customers sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customers applications and products planned, as well as for the planned
application and use of customers third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customers applications or products, or the application or use by
customers third party customer(s). Customer is responsible for doing all
necessary testing for the customers applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customers third party
customer(s). NXP does not accept any liability in this respect.
Limiting values Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customers general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK


grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors specifications such use shall be solely at customers
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors
standard warranty and NXP Semiconductors product specifications.
Translations A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.

12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V.
HD Radio and HD Radio logo are trademarks of iBiquity Digital
Corporation.

PSMN4R8-100BSE

Product data sheet

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PSMN4R8-100BSE

NXP Semiconductors

N-channel 100 V 4.8 m standard level MOSFET in D2PAK

13. Contents
1

General description ............................................... 1

Features and benefits ............................................1

Applications ........................................................... 1

Quick reference data ............................................. 1

Pinning information ............................................... 2

Ordering information ............................................. 2

Marking ................................................................... 2

Limiting values .......................................................2

Thermal characteristics .........................................4

10

Characteristics ....................................................... 5

11

Package outline ................................................... 10

12
12.1
12.2
12.3
12.4

Legal information .................................................11


Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12

NXP B.V. 2013. All rights reserved


For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 April 2013

PSMN4R8-100BSE

Product data sheet

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