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PSMN4R8-100BSE
1. General description
Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part of
NXP's "NextPower Live" portfolio, the PSMN4R8-100BSE complements the latest "hotswap" controllers - robust enough to withstand substantial inrush currents during turn on,
whilst offering a low RDS(on) characteristic to keep temperatures down and efficiency up in
continued use. Ideal for telecommunication systems based on a 48 V backplane / supply
rail.
Enhanced forward biased safe operating area for superior linear mode operation
Very low RDS(on) for low conduction losses
3. Applications
Electronic fuse
Hot swap
Load switch
Soft start
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj 25 C; Tj 175 C
100
IDM
707
Ptot
Tmb = 25 C; Fig. 2
405
VGS = 10 V; ID = 25 A; Tj = 25 C;
4.1
4.8
Static characteristics
RDSon
drain-source on-state
resistance
Fig. 12
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 50 V;
59
83
nC
196
278
nC
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PSMN4R8-100BSE
NXP Semiconductors
Parameter
Conditions
Min
Typ
Max
Unit
542
mJ
Avalanche Ruggedness
EDS(AL)S
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
gate
drain[1]
source
mb
Graphic symbol
mb
mbb076
2
3
D2PAK (SOT404)
[1]
6. Ordering information
Table 3.
Ordering information
Type number
Package
PSMN4R8-100BSE
Name
Description
Version
D2PAK
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN4R8-100BSE
PSMN4R8-100BSE
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj 25 C; Tj 175 C
100
VDGR
drain-gate voltage
Tj 25 C; Tj 175 C; RGS = 20 k
100
VGS
gate-source voltage
-20
20
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PSMN4R8-100BSE
NXP Semiconductors
Parameter
Conditions
ID
drain current
VGS = 10 V; Tj = 25 C; Fig. 1
VGS = 10 V; Tmb = 100 C; Fig. 1
Min
Max
Unit
[1]
120
[1]
120
IDM
707
Ptot
Tmb = 25 C; Fig. 2
405
Tstg
storage temperature
-55
175
Tj
junction temperature
-55
175
Tsld(M)
260
120
Source-drain diode
IS
source current
Tmb = 25 C
ISM
pulsed; tp 10 s; Tmb = 25 C
707
542
mJ
[1]
Avalanche Ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
[1]
200
ID
(A)
03aa16
120
Pder
(%)
160
80
(1)
120
80
40
40
50
100
150
Tmb ( C)
PSMN4R8-100BSE
200
Fig. 2.
100
150
Tmb (C)
200
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PSMN4R8-100BSE
NXP Semiconductors
IAL
(A)
003aaj965
103
102
(1)
(2)
10
1
10-3
Fig. 3.
10-2
10-1
1
tAL (ms)
10
003aaj966
104
ID
(A)
103
Limit RDSon= V DS / ID
tp =10 s
102
100 s
1 ms
10
DC
10 ms
100 ms
10-1
10-1
Fig. 4.
10
102
103
VDS (V)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
0.3
0.37
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
50
K/W
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PSMN4R8-100BSE
NXP Semiconductors
003aaj353
1
Zth(j-mb)
(K/W)
10
= 0.5
-1
0.2
0.1
0.05
10
-2
0.02
tp
single shot
10-3
10-6
Fig. 5.
10-5
10-4
10-3
10-2
tp
T
t
T
10-1
tp (s)
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 A; VGS = 0 V; Tj = 25 C
100
90
gate-source threshold
voltage
gate-source threshold
voltage
4.6
0.16
10
500
10
100
nA
VGS = 20 V; VDS = 0 V; Tj = 25 C
10
100
nA
VGS = 10 V; ID = 25 A; Tj = 25 C;
4.1
4.8
8.7
13
0.43
0.85
1.7
Static characteristics
V(BR)DSS
VGS(th)
VGSth
IDSS
IGSS
RDSon
drain-source on-state
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 C;
Fig. 13; Fig. 12
VGS = 10 V; ID = 25 A; Tj = 175 C;
Fig. 12; Fig. 13
RG
gate resistance
PSMN4R8-100BSE
f = 1 MHz
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PSMN4R8-100BSE
NXP Semiconductors
Parameter
Conditions
Min
Typ
Max
Unit
ID = 25 A; VDS = 50 V; VGS = 10 V;
196
278
nC
ID = 0 A; VDS = 0 V; VGS = 10 V
166.9
234
nC
gate-source charge
ID = 25 A; VDS = 50 V; VGS = 10 V;
40
56
nC
QGD
gate-drain charge
59
83
nC
VGS(pl)
gate-source plateau
voltage
4.3
Ciss
input capacitance
10665 14400 pF
Coss
output capacitance
Tj = 25 C; Fig. 16
674
910
pF
Crss
reverse transfer
capacitance
459
643
pF
td(on)
VDS = 50 V; RL = 2 ; VGS = 10 V;
41
61.5
ns
tr
rise time
RG(ext) = 4.7
65
97.5
ns
td(off)
127
190.5
ns
tf
fall time
69
103.5
ns
Dynamic characteristics
QG(tot)
QGS
Source-drain diode
VSD
source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 C; Fig. 17
0.79
1.2
trr
72
94
ns
recovered charge
VDS = 50 V
227
296
nC
Qr
003aaj968
120
10 6
ID
(A)
5.5
003aaj969
20
RDSon
(m )
15
80
5
10
40
4.5
VGS (V) = 4
0
Fig. 6.
3 V (V) 4
DS
PSMN4R8-100BSE
12 V (V) 16
GS
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PSMN4R8-100BSE
NXP Semiconductors
003aaj970
200
003aaj971
300
ID
(A)
gfs
(S)
160
240
120
180
80
120
40
60
0
0
Fig. 8.
Tj = 25 C
Tj = 150 C
60
120
180
240
ID (A)
300
Fig. 9.
03aa35
10- 1
ID
(A)
min
10- 2
typ
10- 5
VGS (V)
0
- 60
PSMN4R8-100BSE
003aad280
VGS(th)
(V)
max
10- 4
6 V (V) 8
GS
10- 3
10- 6
max
typ
min
60
120
Tj (C)
180
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PSMN4R8-100BSE
NXP Semiconductors
003aaj974
30
4.5
RDSon
(m )
003aad774
3.2
5.5
a
2.4
20
1.6
10
6
0.8
V GS (V) = 10
0
0
40
80
ID (A)
0
-60
120
60
120
ID
003aaj976
VGS(pl)
20 V
80 V
VGS(th)
VGS
VDS = 50V
4
QGS1
180
10
VGS
(V)
VDS
Tj (C)
QGS2
QGS
QGD
QG(tot)
2
003aaa508
50
100
150
200
250
Q G (nC)
PSMN4R8-100BSE
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NXP Semiconductors
003aaj977
105
003aaj978
120
IS
(A)
C
(pF)
C iss
104
80
C oss
103
Tj = 175 C
40
Tj = 25 C
C rss
102
0
10-1
10
2
VDS (V) 10
0.3
0.6
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source current as a function of source-drain
as a function of drain-source voltage; typical
voltage; typical values
values
PSMN4R8-100BSE
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PSMN4R8-100BSE
NXP Semiconductors
SOT404
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
b2
b
e
5 mm
scale
max
nom
min
A1
b2
4.5
4.1
D1
11
1.6
10.3
1.2
9.7
e
2.54
HD
Lp
15.8
2.9
2.6
14.8
2.1
2.2
sot404_po
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
06-03-16
13-02-25
SOT404
12 April 2013
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PSMN4R8-100BSE
NXP Semiconductors
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Preliminary
[short] data
sheet
Qualification
Product
[short] data
sheet
Production
[1]
[2]
[3]
Definition
12.2 Definitions
Preview The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PSMN4R8-100BSE
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PSMN4R8-100BSE
NXP Semiconductors
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, IC-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE are trademarks of NXP B.V.
HD Radio and HD Radio logo are trademarks of iBiquity Digital
Corporation.
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PSMN4R8-100BSE
NXP Semiconductors
13. Contents
1
Applications ........................................................... 1
Marking ................................................................... 2
10
Characteristics ....................................................... 5
11
12
12.1
12.2
12.3
12.4
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