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Conceptual
Design
Layout Editor
Software
Layout Beamer
Software
Belle Software
Sample
Preparation
Exposure (VB 6)
Development
Sputter Coating
Desired Pattern
Proximity Effect
The two main types of interaction in the Proximity Effect are:
Forward scattering (small angle) and Back scattering (large
angle) [1].
360
350
NO PEC
OLD PEC
340
NEW PEC
330
320
310
centre
Intraproximity effect
join
end
region
Fig. 3. Image analysis of the NO PEC, OLD PEC and NEW PEC
with the error bar analysis.
The NO PEC reviews the variations of line widths, line edge
roughness, Intra-Proximity Effect and the dosage assigned is
unevenly distributed. The OLD and NEW PEC, both
compensated for the Proximity Effect as there is uniformity in the
allocation of dose for pattern fracturing and improvement in the
line edge roughness.
Experimental Methods
This experiment was carried out on the three categories on the
substrate: NO Proximity Effect Correction (NO PEC), OLD
Proximity Effect Correction (OLD PEC) and New Proximity Effect
Correction (NEW PEC).
The NO PEC has no Point Spread Function (PSF), the OLD
PEC contains the PSF generated through the Monte Carlo
Simulation, while the NEW PEC contains the PSF generated
through the Modern Version of the Monte Carlo Simulation.
For the Vector Beam 6 (VB6) Electron Beam Tool to write on a
substrate, it passes through the processes in Fig. 2., as each
process plays a vital role in the effectiveness of the desired
pattern.
References
[1] Van de Kraats A and Murali R , Proximity Effect in E-beam
Lithography Atlanta Georgia: Nanotechnology Research Centre,
Georgia Institute of Technology (2005).
[2] Chen. B and Ren, Proximity Effect in Electron Beam
Lithography , IEEE, 0-7803-8511-X/04/$20.00:578, (2004).
[3] Harafuji.K, Misaka.A.,Kawakita.K, Nomura, N., Hamaguchi,H
and Kawamoto, M, Proximity Effect Correction Data Processing
System For Electron Beam Lithography, , Journal of Vacuum
Science and Technology B, Vol.10(1):133-142, (1992).
[4] Owen,R and Rissman,P Proximity Effect Correction for
Electron Beam Lithography by Equalization of Background Dose
, Journal of Applied Physics, Vol.54(6):3573-3581 (1983).
University of Glasgow, charity number SC004401