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Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
SYMBOL
a2
3
a1
1
IO(AV) = 10 A
IRRM = 0.2 A
k 2
trr 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ28E series is supplied in the SOT78 conventional leaded package.
The BYQ28EB series is supplied in the SOT404 surface mounting package.
The BYQ28ED series is supplied in the SOT428 surface mounting package.
PINNING
PIN
SOT78 (TO220AB)
SOT404
SOT428
DESCRIPTION
anode 1
cathode 1
anode 2
tab
cathode
tab
tab
tab
2
1
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-150
150
-200
200
150
200
150
200
10
10
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied VRRM(max)
tp = 2 s; = 0.001
50
55
A
A
0.2
tp = 100 s
0.2
150
- 40
150
October 1998
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
PARAMETER
CONDITIONS
VC
Electrostatic discharge
capacitor voltage
MIN.
MAX.
UNIT
kV
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
Rth j-mb
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
Rth j-a
MIN.
-
4.5
3
-
K/W
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Qrr
trr1
trr2
Irrm
IF = 5 A; Tj = 150C
IF = 5 A
IF = 10 A
VR = VRWM
VR = VRWM; Tj = 100C
IF = 2 A; VR 30 V; -dIF/dt = 20 A/s
IF = 1 A; VR 30 V; -dIF/dt = 100 A/s
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 5 A; VR 30 V; -dIF/dt = 50 A/s
IF = 1 A; dIF/dt = 10 A/s
Vfr
October 1998
MIN.
0.8
0.95
1.1
2
0.1
4
15
10
0.5
0.895
1.1
1.25
10
0.2
9
25
20
0.7
V
V
V
A
mA
nC
ns
ns
A
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
dI
F
R
F
dt
t
rr
D.U.T.
Voltage Pulse Source
time
Q
I
Current
shunt
100%
10%
rrm
to scope
0.5A
IF
0A
time
I rec = 0.25A
VF
IR
fr
trr2
VF
I = 1A
R
time
PF / W
Tmb(max) / C
BYQ28
Vo = 0.748 V
D = 1.0
Rs = 0.0293 Ohms
PF / W
0.5
Rs = 0.0293 Ohms
115
a = 1.57
3
2
1
4
IF(AV) / A
135
140
145
140
145
150
8
October 1998
130
2.8
135
tp
D=
T
tp
125
2.2
130
0.1
120
1.9
125
0.2
Tmb(max) / C
BYQ28
Vo = 0.748 V
120
110
3
IF(AV) / A
150
6
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
trr / ns
1000
Qs / nC
100
IF=5A
IF=2A
IF=1A
100
IF=5A
10
IF=1A
10
1.0
0.1
100
10
dIF/dt (A/us)
10
-dIF/dt (A/us)
100
Irrm / A
10
1.0
10
1
IF=5A
0.1
0.1
IF=1A
PD
0.01
0.01
10
-dIF/dt (A/us)
0.001
1us
100
15
tp
D=
10us
tp
T
t
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYQ28E
10s
BYQ28
IF / A
Tj=150C
Tj=25C
10
5
max
typ
0
0
0.5
VF / V
1.5
October 1998
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
2,54 2,54
0,6
2,4
October 1998
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
4.5 max
1.4 max
10.3 max
11 max
15.4
2.5
0.85 max
(x2)
0.5
2.54 (x2)
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
October 1998
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
seating plane
6.73 max
1.1
tab
2.38 max
0.93 max
5.4
4 min
6.22 max
10.4 max
4.6
2
1
0.5
0.5 min
0.3
0.5
0.8 max
(x2)
2.285 (x2)
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
1.5
2.5
4.57
October 1998
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
October 1998
Rev 1.300