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Electrical Properties
Learning Objectives
After this lecture, you should be able to do the following:
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Lecture 20 - 1
1. Semiconductors
(Intrinsic Semiconductors)
Lecture 20 - 2
Lecture 20 - 3
Conduction in Semiconductors
To become free electrons, electrons must be promoted across the energy band gap and
into empty states at the bottom of the conduction band.
The excitation energy is from a nonelectrical source such as heat or light.
Thermal excitation: The number of electrons excited thermally (by heat energy) into the
conduction band depends on the energy band gap width as well as temperature.
Lecture 20 - 4
filled states
GAP
filled
valence
band
filled
band
Energy
empty
conduction
band
GAP
filled states
Insulators:
filled
valence
band
filled
band
Lecture 20 - 5
Conduction in Intrinsic
Semiconductors
Electron bonding model of
electrical conduction in intrinsic
silicon: (a) before excitation, (b)
and (c) after excitation (the
subsequent free-electron and
hole motions in response to an
external electric field).
Lecture 20 - 6
no applied
electric field
electron hole
pair migration
electron hole
pair creation
Si atom
+ applied
electric field
+
applied
electric field
# holes/m3
hole mobility
# electrons/m3
MSE 3300 / 5300 UTA Spring 2015
electron mobility
Lecture 20 - 7
Ex: GaAs
For GaAs
For Si
MSE 3300 / 5300 UTA Spring 2015
Intrinsic Semiconductors:
Conductivity vs T
Data for Pure Silicon:
-- increases with T
-- opposite to metals
material
Si
Ge
GaP
CdS
Lecture 20 - 9
Intrinsic Semiconductors
Pure material semiconductors: silicon (Si) &
germanium (Ge); Band gaps: 1.1 eV and 0.67 eV
Group IVA materials
Compound semiconductors
III-V compounds
Ex: GaAs & InSb; 1.42 eV, 0.17 eV
II-VI compounds
Ex: CdS & ZnTe; 2.40 eV, 2.4 eV
Lecture 20 - 10
K Ca Sc
Se Br Kr
He
Li Be
F Ne
Na Mg
Cl Ar
Rb Sr
Cs Ba
Te
Adapted from
Fig. 2.8,
Callister &
Rethwisch 9e.
Xe
Po At Rn
Fr Ra
Electropositive elements:
Readily give up electrons
to become + ions.
MSE 3300 / 5300 UTA Spring 2015
Electronegative elements:
Readily acquire electrons
to become - ions.
Lecture 20 - 11
Lecture 20 - 12
2. Extrinsic Semiconductors
n-Type semiconductors
p-Type semiconductors
Lecture 20 - 13
n >> p
MSE 3300 / 5300 UTA Spring 2015
Lecture 20 - 14
p >> n
MSE 3300 / 5300 UTA Spring 2015
Lecture 20 - 15
Extrinsic:
-- electrical behavior is determined by presence of impurities
that introduce excess electrons or holes
-- n p
Phosphorus atom
4+ 4+ 4+ 4+
4+ 5+ 4+ 4+
4+ 4+ 4+ 4+
no applied
field
Boron atom
hole
conduction
electron
4+ 4+ 4+ 4+
valence
electron
4+ 4+ 4+ 4+
Si atom
4+ 3+ 4+ 4+
no applied
electric field
Lecture 20 - 16
Conductivity of Extrinsic
Semiconductors
n-Type semiconductors
p-Type semiconductors
Lecture 20 - 17
Conductivity: Temperature
Dependence of Carrier Concentration
Solid-state device
operation
-- increases doping
-- reason: imperfection sites
extrinsic
intrinsic
3
freeze-out
extrinsic conduction...
concentration (1021/m3)
Comparison: intrinsic vs
undoped
Conduction electron
doped
0
0
200
400
600
T (K)
Lecture 20 - 19
Lecture 20 - 20
1. Dopant content
2. Temperature
Temperature dependence of (a) electron and (b) hole mobilities for silicon
MSE 3300 / 5300 UTA Spring 2015
Lecture 20 - 21
4. Semiconductor Devices
Lecture 20 - 22
+ p-type
+ +
+ +
-- No applied potential:
no net current flow.
-- Forward bias: carriers
flow through p-type and
n-type regions; holes and
electrons recombine at
p-n junction; current flows.
-- Reverse bias: carriers
flow away from p-n junction;
junction region depleted of
carriers; little current flow.
MSE 3300 / 5300 UTA Spring 2015
n-type
p-type
+ - n-type
+
++- - + -
+ p-type
+ +
+ +
n-type
Adapted from
Fig. 18.21,
Callister &
Rethwisch
9e.
Lecture 20 - 23
MOSFET Transistor
Integrated Circuit Device
Lecture 20 - 25
Summary
1. Semiconductors: intrinsic and extrinsic
semiconductors
2. Band structures of semiconductors
3. Conductivity of semiconductors
4. Semiconductor devices
Lecture 20 - 26
Homework 10
18.4, 18.5, 18.8, 18.11, 18.17
18.21, 18.25, 18.29, 18.38
* Problems from Callister, 9th Edition
Lecture 20 - 27