Power Transistors

2SC1568
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification
Complementary to 2SA0900

Unit: mm

8.0+0.5
0.1

3.20.2

Absolute Maximum Ratings Ta = 25C

Parameter

Symbol

0.750.1

Rating

0.50.1

Unit
4.60.2

Collector-base voltage (Emitter open)

VCBO

18

Collector-emitter voltage (Base open)

VCEO

18

Emitter-base voltage (Collector open)

VEBO

Collector current

IC

Peak collector current

ICP

Collector power dissipation

PC

1.2

Junction temperature

Tj

150

Storage temperature

Tstg

55 to +150

3.050.1

3.80.3
1.90.1

Low collector-emitter saturation voltage VCE(sat)

Satisfactory operation performances and high efficiency with a lowvoltage power supply
TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts

16.01.0

Features

11.00.5

3.160.1

0.50.1

1.760.1

2.30.2

1: Emitter
2: Collector
3: Base
TO-126B-A1 Package

Electrical Characteristics Ta = 25C 3C

Parameter

Symbol

Conditions

Collector-base voltage (Emitter open)

VCBO

IC = 10 A, IE = 0

18

Collector-emitter voltage (Base open)

VCEO

IC = 1 mA, IB = 0

18

Emitter-base voltage (Collector open)

VEBO

IE = 10 A, IC = 0

Collector-base cutoff current (Emitter open)

ICBO

VCB = 10 V, IE = 0

Collector-emitter cutoff current (Base open)

ICEO

VCE = 18 V, IB = 0

Forward current transfer ratio

hFE1 *

VCE = 2 V, IC = 500 mA

90
50

hFE2

VCE = 2 V, IC = 1.5 A

Collector-emitter saturation voltage

VCE(sat)

IC = 1 A, IB = 50 mA

Base-emitter saturation voltage

VBE(sat)

IC = 500 mA, IB = 50 mA

Transition frequency

fT

Collector output capacitance

(Common base, input open circuited)

Cob

Min

Typ

Max

Unit

V
1

10

280

0.5

100

1.2

VCB = 6 V, IE = 50 mA, f = 200 MHz

150

MHz

VCB = 6 V, IE = 0, f = 1 MHz

12

pF

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank

hFE1

90 to 155

130 to 210

180 to 280

Publication date: January 2003

SJD00093BED

2SC1568
PC Ta

IC VCE

IC I B
1.2

1.2
TC=25C

(1)With a 1001002mm
Al heat sink
(2)Without heat sink
Class B push pull

1.0

1.0

4
(1)

2
(2)

VCE=2V
TC=25C

Collector current IC (A)

Collector current IC (A)

Collector power dissipation PC (W)

IB=5.0mA

0.8

4.5mA
4.0mA
3.5mA

0.6

3.0mA
2.5mA
2.0mA
1.5mA

0.4

1.0mA

0.2

0.8

0.6

0.4

0.2

0.5mA

40

80

120

160

1.6

2.0

10

VBE(sat) IC

hFE IC

TC=100C
25C

25C

0.1

1000

TC=100C

25C
25C

0.1

0.1

TC=100C
25C

100

25C

10

1
0.01

Collector current IC (A)

0.1

150

100

50

10

Emitter current IE (mA)

100

ICBO Ta
104

50

VCB=10V

IE=0
f=1MHz
TC=25C

40

103

ICBO (Ta)
ICBO (Ta = 25C)

VCB=6V
f=200MHz
TC=25C

Collector current IC (A)

Cob VCB
Collector output capacitance
C (pF)
(Common base, input open circuited) ob

fT I E

12

VCE=2V

IC/IB=10

10

0.01
0.01

200

Transition frequency fT (MHz)

1.2

VCE(sat) IC

Collector current IC (A)

0.8

Base current IB (mA)

0
1

0.4

Collector-emitter voltage VCE (V)

IC/IB=20

0.01
0.01

Ambient temperature Ta (C)

10

0.1

200

Forward current transfer ratio hFE

Base-emitter saturation voltage VBE(sat) (V)

Collector-emitter saturation voltage VCE(sat) (V)

30

20

102

10
10

10

Collector-base voltage VCB (V)

SJD00093BED

100

40

80

120

Ambient temperature Ta (C)

160

2SC1568
ICEO Ta
105

Safe operation area

10

VCE=18V

Single pulse
TC=25C
ICP

Collector current IC (A)

ICEO (Ta)
ICEO (Ta = 25C)

104

103

102

t=10ms
IC

t=1s
DC

0.1

0.01

10

40

80

120

Ambient temperature Ta (C)

160

0.001
0.1

10

100

Collector-emitter voltage VCE (V)

SJD00093BED

Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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2002 JUL