FDS9435A

30V P-Channel PowerTrench MOSFET

General Description

Features

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductors advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V 25V).

5.3 A, 30 V

Applications

Fast switching speed

Power management

High performance trench technology for extremely

low RDS(ON)

RDS(ON) = 50 m @ V GS = 10 V
RDS(ON) = 80 m @ V GS = 4.5 V

Low gate charge

Load switch
Battery protection

High power and current handling capability

DD

DD

DD
DD

SO-8
Pin 1 SO-8

G
G
S
SS S
SS

Absolute Maximum Ratings

Symbol

TA=25oC unless otherwise noted

Ratings

Units

V DSS

Drain-Source Voltage

Parameter

30

V GSS

Gate-Source Voltage

25

ID

Drain Current

5.3

Continuous

(Note 1a)

Pulsed
PD

50

Power Dissipation for Single Operation

TJ , TSTG

(Note 1a)

2.5

(Note 1b)

1.2

(Note 1c)

Operating and Storage Junction Temperature Range

55 to +175

Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

50

C/W

RJA

Thermal Resistance, Junction-to-Ambient

(Note 1c)

125

C/W

RJ C

Thermal Resistance, Junction-to-Case

(Note 1)

25

C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS9435A

FDS9435A

13

12mm

2500 units

2001 Fairchild Semiconductor Corporation

FDS9435A Rev D1(W)

FDS9435A

October 2001

Symbol

Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Typ

Max Units

Off Characteristics
BV DSS
BV DSS
TJ
IDSS

DrainSource Breakdown Voltage

Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current

V GS = 0 V, ID = 250 A

V DS = 24 V,

V GS = 0 V

IGSSF
IGSSR

GateBody Leakage, Forward

GateBody Leakage, Reverse

V GS = 25 V,
V GS = 25 V

V DS = 0 V
V DS = 0 V

100
100

nA
nA

On Characteristics

30

ID = 250 A, Referenced to 25C

V
23

mV/C

(Note 2)

V GS(th)
V GS(th)
TJ
RDS(on)

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient
Static DrainSource
OnResistance

V DS = V GS , ID = 250 A
ID = 250 A, Referenced to 25C

ID(on)

OnState Drain Current

V GS = 10 V,

V DS = 5 V

gFS

Forward Transconductance

V DS = 5 V,

ID = 5.3 A

10

V DS = 15 V,
f = 1.0 MHz

V GS = 0 V,

528

pF

132

pF

70

pF

1.7
4.5

V GS = 10 V,
ID = 5.3 A
V GS = 4.5 V, ID = 4 A
V GS = 10 V, ID = 5.3 A, TJ =125C

42
65
57

mV/C
50
80
77

25

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics
td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

td(off)

TurnOff Delay Time

tf

TurnOff Fall Time

Qg

Total Gate Charge

Qgs

GateSource Charge

Qgd

GateDrain Charge

(Note 2)

V DD = 15 V,
V GS = 10 V,

V DS = 15 V,
V GS = 10 V

ID = 1 A,
RGEN = 6

ID = 4 A,

14

ns

13

24

ns

14

25

ns

17

ns

10

14

nC

2.2

nC

nC

DrainSource Diode Characteristics and Maximum Ratings

IS
V SD

Maximum Continuous DrainSource Diode Forward Current

DrainSource Diode Forward
V GS = 0 V, IS = 2.1 A
Voltage

(Note 2)

0.8

2.1

1.2

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.

a) 50C/W when
mounted on a 1in2
pad of 2 oz copper

b) 105C/W when
mounted on a .04 in2
pad of 2 oz copper

c) 125C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%

FDS9435A Rev D1(W)

FDS9435A

Electrical Characteristics

FDS9435A

Typical Characteristics

30

2
V GS = -10V

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

-6.0V

-ID , DRAIN CURRENT (A)

-5.0V
V
-4.5V
V

20

-4.0V
10

-3.5V
-3.0V

1.8
VGS=-4.0V
1.6
-4.5V
1.4

-5.0V
-6.0V
-7.0V

1.2

-8.0V
-10V

1
0.8

12

-V DS , DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

30

0.25
ID = -5.3A
VGS = -10V

ID = -2.8A
RDS(ON), ON-RESISTANCE (OHM)

RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE

24

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6

1.4

1.2

0.8

0.2

0.15
T A = 125o C
0.1
T A = 25o C
0.05

0.6

0
-50

-25

25

50

75

100

125

150

175

TJ , JUNCTION TEMPERATURE (oC)

10

-V GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

15

100
25oC

T A = -55o C

-I S, REVERSE DRAIN CURRENT (A)

V DS = -5V
12
-ID, DRAIN CURRENT (A)

18

-I D, DRAIN CURRENT (A)

125oC
9

0
1

1.5

2.5

3.5

-V GS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

4.5

VGS =0V

10

TA = 125o C
1
25oC
0.1
-55 oC
0.01

0.001

0.0001
0

0.2

0.4

0.6

0.8

1.2

1.4

-V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDS9435A Rev D1(W)

FDS9435A

Typical Characteristics

800
ID = -5.3A

V DS = -5V

f = 1 MHz
V GS = 0 V

700

-10V

8
-15V

600
CAPACITANCE (pF)

-V GS, GATE-SOURCE VOLTAGE (V)

10

CISS
500
400
300
COSS
200
100
CRSS

0
0

10

Q g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

15

20

25

30

Figure 8. Capacitance Characteristics.

100

50

RDS(ON) LIMIT

P(pk), PEAK TRANSIENT POWER (W)

100s
-ID, DRAIN CURRENT (A)

10

-V DS, DRAIN TO SOURCE VOLTAGE (V)

1ms

10

10ms
100ms
1s

10s
DC
VGS = -10V
SINGLE PULSE
R JA = 125 oC/W

0.1

T A = 25o C
0.01
0.1

10

SINGLE PULSE
RJA = 125C/W
TA = 25C

40

30

20

10

0
0.001

100

0.01

-V DS , DRAIN-SOURCE VOLTAGE (V)

10

100

1000

t 1, TIME (sec)

Figure 9. Maximum Safe Operating Area.

r(t), NORMALIZED EFFECTIVE

TRANSIENT THERMAL RESISTANCE

0.1

Figure 10. Single Pulse Maximum

Power Dissipation.

1
D = 0.5

RJA(t) = r(t) + RJA

o

0.2

0.1

RJA = 125 C/W

0.1
0.05

P(pk)

0.02

t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

0.01

0.01
SINGLE PULSE

0.001
0.0001

0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.

FDS9435A Rev D1(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series

FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MicroPak
MICROWIRE

OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER

SMART START
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET

VCX

STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4