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Se.Yvt'c es
Sl. No.
33801
D-RSR- L-RRA
Time Allowed
Three Hours
l I
INSTRUC TIONS
Candidate s should atten1pt SIX questions , selecting
TWO questions fton1 Part-A, ONE f"ro:~n Part-B,
ONE f"ro:n1 Part--e and TWO f"ro:m. Part-D.
The nu2n.ber of 2n.arks carried by each question is
indicated at t:he end of t:he question.
Answers
:~nust:
1.
/69
(a)
12
P.T.O.
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(b)
10
(ii]
(iii) Intrinsic
impedance
of
wave
medium
{c)
2.
(a)
(b)
10
12
10
Tc.
;
Q~-~GI--r=-':6-- {DTs~i,l-l-,!~:
-L
D-RSR-L-RRA /69
j
2
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(c)
(i)
3.
(a)
(i)
G{s) =
s(s
+3s
128
+10s 5 +24s 4 +48s 3
(ii)
R (s)
E{s)
+_,/
10
s(l +01 s)(l + 00 Is)
C(s)
[ P.T.O.
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(b)
(i}
= ~ . .. s + 5
.
{s 1) (s + 2)(s + 3)
Y=[l
OJ X
Evaluate
the
state
transition
matrix
and
the
autonomous
response of the system with initial
condition x(O) = {1 2lT{c)
Part-B
4.
(a)
D-RSR-L -RRA/69
12
4
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(b)
(c)
5.
(a)
Explain
the
Hall
effect
in
semiconductors and define Hall constant.
What do you mean by negative Hall
constant?
12
12
(i)
(ii)
(b)
(c)
and
Er.
10
16
10
'
D-RSR-L-RRA/69
[ P.T.O.
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Part-e
6.
{a)
10.
(b)
12
lMO
r--Q/-~
~
E~Iooov~
I
I
~=l
j_c1 ~1
J.lF
J.lF
{i)
{ii)
(iii) Determin e
voltage
the
which
appears across each capacitor at
steady state.
D-RSR-L -RRA/69
12
6
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(c)
7.
(a)
/X~
-R2
12
12
e(t)~
L=Ol H
C=25JLF
(i)
Find the
equivalent impedance
appearing to the right of points ab.
D-RSR-lr-RRA/69
P.T.O.
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(iij
the
Dcterrnine
the
value
of
the
n;actance
X
which
make"'
source <""Urrent in phase wtth the
source voltage.
of part (iiJ
be induc-tive or capacitive? Find the
required value of L or C.
(c)
condition
12
12
Part-D
8.
(a)
D--RSR-L-RRA/69
12
8
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(b)
The
power factor of a
circuit 1s
determined by cos <1> = P f VI, where P 1s
the power in watt, V the voltage in volt
and I is the current in ampere. The
relative errors in power, current and
voltage are respectively 0 5/o, +1 o/o
and +lo/o.
Calculate the relative error in power
factor. Also calculate the uncertainty in
power factor if the errors were specified
as uncertainties.
(c)
9.
(a)
10
10
10
D-RSR-L-RRA/69
P.T.O.
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fbj
Suggest
negative
temperature
coeffictent: device for the measurement
of temperature (0 "C-150 ~C). Describe
the
re,;istance-tcmperature
characteristic. voltage--current characteristic
and
current-time
characteristic
of
thermistors.
Draw
a
circuit
for
measurement
of temperature using
thermistor. The output relation for a
therrrlistor transducer is given by
R
For T 0
R
(c)
l.O.
(a)
(b)
. Roe
lltL.l.l
T
1o
300 K. I} = 3420, R
2 k!"l, calculate T.
'
1 k.Q and
10
Draw
the
line
diagram
of
data
acquisition system from process plant to
computer system. Explain the function
of each component.
What do you
understand
by
smart
transducer?
Discuss it in brief.
12
10
Find H everywhere.
D--RSR-L-RRA/69
12
10
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(c)
transmission
k;
(i)
{ii)
LC
120
,JE;
cos
h-1 d
2a
10
***
D-RSR-L-RRA/69
11
BS
"14*
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~~71
SeYV I'c.eS
021 501
D-RSR -L-RR B
should
atte~npt
FIVE
questi ons
in all.
Quest: ion No. 1 is conz.p ulsory.. The remai ning
FOUR questi ons are to be atte~npted by select ing
ONE questi on each from Sectio ns A, B. C and D.
The
nu~nber
1. A (a)
(ii)
(iii)
(iv)
D-RSR -L-RRB
I Contd .I
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f f1?. f ~(I
(b)
(ii)
(iii}
(iv)
100'>
/!:.
40"'
50)~
6QC;b
(c)
(d)
"Over
reaching"
and
uunder
reaching''
are
experienced in
(i)
frequency relays
(ii)
over current relays
(iii)
distance relays
(iv)
under voltage relays
(e}
(ii)
(iii)
(iv)
I Contd.J
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''
(g)
(h)
(i)
(i)
low, high
(ii)
low, low
(iii)
high, low
(iv)
high, high
Which one
priority ?
of the
(i)
RST 75
(ii)
RST 55
(iii)
TRAP
(iv)
HOLD
following
has
the
highest
(ii)
(iii)
atleast
ten
times
greater
than
bandwidth of the modulating signal
(iv)
twice the
signal
bandwidth
of the
the
modulating
(ii)
(iii)
(iv)
efficiency is less
0-RSR-L-RRB
[Contd.]
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cj)
(i)
("
fa:1t
\
lL
I. B
response~
( iii_}
3peed can
drivea
(iy)
be
varied~
su~ta.ble
for
group
a:
b!
Draw
the
Jt-''ro
.~equence
network
t.cansfnrmer eunnectionl':l. .~-:.hown below
of
the
A/Y, A/Y;
1c}
-r 20
i.i
''"'
ctt T - 300''K.
(d)
<.e l
Show
With
bridgt~
D-RSR l
RRB
3.
t.hat
of
1 Contd_
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-------,
SECTION A
2.
(a)
(b)
(c)
3.
(a)
(b)
10
10
20
.10
10
D-RSR-L-RRB
[Contd.J
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1c:
D-RSRL RRB
20
!Contd
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SECTION B
4.
(a)
(b)
{c)
Starting
from
fundaTnentals,
derive
the
equations for sending end voltage and sending
18
20
synchronous
5.
(a)
0-RSR-L-RRB
15
[Contd .]
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(b)
(i)
Explain the
situation.
(ii)
(c)
practical
A 3-phase double
shown below
I+
circuit
4 m - --
importance
line
..
G----- -f----- 0
3m
b~ 55 m
!
'
.-~r-3
cQ
~
IS
of this
arranged
as
j
c
yb
Ill
l
4m
<::)a
--+I
0-RSRLRRB
1.5
IContd.l
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SECTION C
6.
(a)
The
circuit
with
J3 =
Rc -
50,
shown
V BE
uses a
silicon
transistor
V CC- = 22-5 V
0-6 V,
and Ic
and
12 V
< 3.
~
:?
>Rc
-+---
_ _ __1__ _ _ _ _ _ _
20
D-RSR-L-RRB
[Contd.]
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(b)
05 V.
- -n-[>!----,-----==~
- - - - ---- - - - - - - - ' - - - - - - Calculate the value of R 1 . Specify the diode in
terms of forward current" power dissipation and
peak
revert~-e
voltage.
Assume
the
reverse
saturation current I~ is 5 jiA and forward voltage
of diode, V f'" -- 07 V.
(c)
12
by step.
7.
(a)
15
:b)
15
(c)
IO
0-RSR--l RRB
10
[Contd.]
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SECTION D
8.
(a)
neat.
explain
how
With
circuit
diagram
envelope
and
detector
waveforms~
detects
AM
16
signaL
(b)
The
frequency
sensitivity
of
the
frequency deviation
(ii)
modulation index
(iii)
(c)
Consider
modulation
an
to
FDM
system
transmit
24
using
16
AM-SSB
independent
vmce
input.
Determine
the
transmission
D-RSR-L-RRB
11
LContd.]
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9.
.~ource
f't:~!-:>l~~r:-anc<:
t><
."'5
TI
v
('
(n
l:n
1 ph~;-.r-
, ighvtnr-!, inad
d.
,.
pha~<l..
2ao v. se
:::a.dju::..~t-1!:--d to
.r.r-:.. d.
C:!.f:;;-ul..:jt:.-c
vuiL:tj:{t:~.
::>
-HY
~n:
Htl!
r-.rn.~
vah.H~
<:t
rt~~i,-
of ~>he-
1Vt.
outt.Jut
,"'J
RSR-l. RRB
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