R07ds0230ej0300 cr6cm12b

Preliminary Datasheet
CR6CM-12B
R07DS0230EJ0300
Rev.3.00
Jul 30, 2013
600V - 6A - Thyristor
Medium Power Use
Features
IT (AV) : 6 A
VDRM : 600 V
IGT : 10 mA
Non-Insulated Type
Planar Passivation Type
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
RENESAS Package code: PRSS0004AA-A

A
(Package name: TO-220)
4
2, 4
3
12
1.
2.
3.
4.
Cathode
Anode
Gate
Anode
Applications
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Page 1 of 8
CR6CM-12B
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Preliminary
Symbol
IT (RMS)
IT (AV)
Ratings
9.4
6
Unit
A
A
ITSM
90
I2t
41
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
5
0.5
6
10
2
40 to +150
40 to +150
2.1
W
W
V
V
A
C
C
g
Conditions
Commercial frequency, sine half wave
Note1
180 conduction, Tc = 121C
50Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 50Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Repetitive peak reverse current
Symbol
IRRM
Min.
Typ.
Max.
2.0/5.0
Unit
mA
Test conditions
Tj = 125C/150C, VRRM applied
Repetitive peak off-state current

On-state voltage
IDRM
VTM
2.0/5.0
1.7
mA
V
Tj = 125C/150C, VDRM applied
Gate trigger voltage
VGT
1.0
VGD
0.2/0.1
IGT
IH
Rth (j-c)
15
10
2.5
mA
mA
C/W
Gate non-trigger voltage

Gate trigger current
Holding current
Thermal resistance
Tc = 25C, ITM = 20 A,
instantaneous value
Tj = 25C, VD = 6 V, IT = 1 A
Tj = 125C/150C, VD = 1/2
VDRM
Tj = 25C, VD = 6 V, IT = 1 A
Tj = 25C, VD = 12 V
Junction to caseNote1 Note2
Notes: 1. Case temperature is measured at anode tab 1.5 mm away from the molded case.
2. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W.
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
Page 2 of 8
CR6CM-12B
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
100
Surge On-State Current (A)
102
101
VFGM = 6V
Gate Trigger Current (Tj = tC)

Gate Trigger Current (Tj = 25C)
Gate Voltage (V)

Gate Trigger Voltage (Tj = tC)
100 (%)
Gate Trigger Voltage (Tj = 25C)
102
101
Gate Trigger Current vs.

Junction Temperature
PGM = 5W
PG(AV)
= 0.5W
IGT = 10mA
VGD = 0.1V
101
IFGM = 2A
102
103
103
Typical Example
102
101
100
40
40
80
160
120
Gate Current (mA)
Junction Temperature (C)
Gate Trigger Voltage vs.

Maximum Transient Thermal Impedance

Characteristics (Junction to case)
103
Typical Example
102
40
20
Gate Characteristics
100
101
40
Conduction Time (Cycles at 50Hz)
VGT = 1V
10-1
60
On-State Voltage (V)
102
101
80
0
100
100 (%)
100
0
40
80
120
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
160
Transient Thermal Impedance (C/W)
On-State Current (A)
Tc = 125C
102
101
100
101 3
10
102
101
100
101
Time (s)
Page 3 of 8
CR6CM-12B
Preliminary
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
16
160
14
140
120
360
Case Temperature (C)
Average Power Dissipation (W)
Maximum Average Power Dissipation

(Single-Phase Half Wave)
180
12
10
120
90
60
= 30
8
6
360
2
0
0
90
40
60
= 30
0
12
10
Average On-State Current (A)

(Single-Phase Full Wave)

(Single-Phase Full Wave)
160
14
12
180
120
= 30
10
90
60
8
6
4
360
120
16
140
120
360
100
Resistive
loads
10
60
180
120
40
90
20
0
12
80
Resistive loads
0
0
= 30
2
4
60
6
10
12

(Rectangular Wave)

(Rectangular Wave)
16
160
140
14
DC
270
180
120
90
12
60
10
= 30
8
6
360
2
0
Resistive,
inductive loads
0
10
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
12
180
60
12
10
80
20
Resistive,
inductive loads
2
Resistive,
inductive loads
100
120
100
Resistive,
inductive loads
80
60
360
40
180 270
60
DC
90 120
= 30
20
0
10
12
Page 4 of 8
Preliminary
140
120
100
80
60
40
20
0
40
40
80
120
160
Breakover Voltage vs.

Rate of Rise of Off-State Voltage
160
Typical Example
Tj = 125C
140
120
100
80
60
40
20
0 1
10
102
103
104
Repetitive Peak Reverse Voltage vs.

160
Typical Example
140
120
100
80
60
40
20
0
40
40
80
120
160

Rate of Rise of Off-State Voltage
160
Typical Example
Tj = 150C
140
120
100
80
60
40
20
0 1
10
102
103
104
Rate of Rise of Off-State Voltage (V/s)
Rate of Rise of Off-State Voltage (V/s)
Holding Current vs.

Turn-Off Time vs.

103
80
Typical Example
70
Turn-Off Time (s)
Breakover Voltage (dv/dt = vV/s)
Holding Current (Tj = tC)

Holding Current (Tj = 25C)
100 (%)
Breakover Voltage (dv/dt = 1V/s)
100 (%)
100 (%)
Typical Example
Breakover Voltage (dv/dt = vV/s)
160
Breakover Voltage (dv/dt = 1V/s)
Breakover Voltage (Tj = tC)
Breakover Voltage (Tj = 25C)
100 (%)

Repetitive Peak Reverse Voltage (Tj = tC)

Repetitive Peak Reverse Voltage (Tj = 25C) 100 (%)
CR6CM-12B
102
Typical Example
60
50
40
30
Distribution
20
IT = 6A, di/dt = 5A/s,

VD = 300V, dv/dt = 20V/s
VR = 50V
10
101
40
40
80
120
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
160
20
40
60
80 100 120 140 160
Page 5 of 8
CR6CM-12B
Preliminary
Gate Trigger Current (tw)

100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.

Gate Current Pulse Width
103
Typical Example
102
101 -1
10
100
101
102
Gate Current Pulse Width (s)
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
Page 6 of 8
CR6CM-12B
Preliminary
Package Dimensions
JEITA Package Code
SC-46
RENESAS Code
PRSS0004AG-A
Previous Code
TO-220ABS
MASS[Typ.]
2.1g
Unit: mm
4.5 0.2
2.8 0.1
Package Name
TO-220AB
9.9 0.2
+ 0.10
3.6 0.2
13.08 0.20
(3.00)
9.2 0.2
15.7 0.2
1.30 0.05
1.62 Max
0.80 0.10
2.6 Max
2.54
2.54
+ 0.10
0.50 0.05
10.0 0.2
Package Name
TO-220
JEITA Package Code

SC-46
RENESAS Code
PRSS0004AA-A
Previous Code
MASS[Typ.]
2.0g
10.5Max
Unit: mm
4.5
3.6
3.8Max
12.5Min
16Max
7.0
3.2
1.3
1.0
0.8
0.5
2.54
2.6
4.5Max
2.54
2
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
Page 7 of 8
CR6CM-12B
Preliminary
Ordering Information
Orderable Part Number
CR6CM-12B#BB0
CR6CM-12B-A8#BB0
Note:
Packing
Tube
Tube
Quantity
50 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Please confirm the specification about the shipping in detail.
R07DS0230EJ0300 Rev.3.00
Jul 30, 2013
Page 8 of 8
Notice
1.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for
the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the
use of these circuits, software, or information.
2.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics
3.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or
assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.
technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or
others.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. Renesas Electronics assumes no responsibility for any losses incurred by you or
5.
Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on
third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.
the product's quality grade, as indicated below.

"Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic
equipment; and industrial robots etc.
"High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc.
Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical
implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it
in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. Renesas Electronics shall not be in any way liable for any damages or losses
incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by Renesas Electronics.
6.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage
range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the
use of Renesas Electronics products beyond such specified ranges.
7.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and
malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the
possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to
redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult,
please evaluate the safety of the final products or systems manufactured by you.
8.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics
products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes
no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9.
Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or
regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the
development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of Renesas Electronics products, who distributes, disposes of, or otherwise places the product with a third party, to notify such third party in advance of the
contents and conditions set forth in this document, Renesas Electronics assumes no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics
products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of Renesas Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.
(Note 1)
"Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
(Note 2)
"Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics.
http://www.renesas.com
SALES OFFICES
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Dsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
2013 Renesas Electronics Corporation. All rights reserved.

Colophon 2.2

R07ds0230ej0300 cr6cm12b

Transféré par

Informations du document

Titre original

Copyright

Formats disponibles

Partager ce document

Partager ou intégrer le document

Options de partage

Avez-vous trouvé ce document utile ?

Ce contenu est-il inapproprié ?

Droits d'auteur :

Formats disponibles

R07ds0230ej0300 cr6cm12b

Transféré par

Droits d'auteur :

Formats disponibles

Preliminary Datasheet

RENESAS Package code: PRSS0004AA-A

Repetitive peak off-state current

Tj = 125C/150C, VDRM applied

Gate trigger voltage

Gate non-trigger voltage

Rated Surge On-State Current

Surge On-State Current (A)

Gate Trigger Current (Tj = tC)

Gate Voltage (V)

Gate Trigger Current vs.

Gate Current (mA)

Junction Temperature (C)

Gate Trigger Voltage vs.

Maximum Transient Thermal Impedance

Conduction Time (Cycles at 50Hz)

On-State Voltage (V)

Junction Temperature (C)

Transient Thermal Impedance (C/W)

On-State Current (A)

Case Temperature (C)

Average Power Dissipation (W)

Maximum Average Power Dissipation

Average On-State Current (A)

Maximum Average Power Dissipation

Allowable Case Temperature vs.

Case Temperature (C)

Average Power Dissipation (W)

Average On-State Current (A)

Average On-State Current (A)

Average On-State Current (A)

Maximum Average Power Dissipation

Allowable Case Temperature vs.

Average On-State Current (A)

Case Temperature (C)

Average Power Dissipation (W)

Average On-State Current (A)

Breakover Voltage vs.

Repetitive Peak Reverse Voltage vs.

Junction Temperature (C)

Breakover Voltage vs.

Rate of Rise of Off-State Voltage (V/s)

Rate of Rise of Off-State Voltage (V/s)

Holding Current vs.

Turn-Off Time vs.

Turn-Off Time (s)

Breakover Voltage (dv/dt = vV/s)

Holding Current (Tj = tC)

Breakover Voltage (dv/dt = 1V/s)

Junction Temperature (C)

Breakover Voltage (dv/dt = vV/s)

Breakover Voltage (dv/dt = 1V/s)

Breakover Voltage (Tj = tC)

Breakover Voltage (Tj = 25C)

Breakover Voltage vs.

Repetitive Peak Reverse Voltage (Tj = tC)

IT = 6A, di/dt = 5A/s,

Junction Temperature (C)

80 100 120 140 160

Junction Temperature (C)

Gate Trigger Current (tw)

Gate Trigger Current vs.

Gate Current Pulse Width (s)