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FEATURES
Figure 1. Package
SO20
Package
L9903
SO20
L9903TR
2
DESCRIPTION
Control circuit for power MOS bridge driver in automotive applications with ISO 9141bus interface.
10
ST
R CP
Reference
BIAS
VCC
Charge
pump
= V
STH
f ST
VCC
EN
4
REN
DIR
CB1
12
GH1
14
S1
Thermal shutdown
Control Logic
DG
CP
13
Overvoltage
Undervoltage
RDG
11
5
R DIR
R S1
V S1TH =
19
GL1
R GL1
18
GL2
R GL2
VCC
17
R PWM
PWM
R S2
V S2TH =
PR
6
Timer
ISO-Interface
RX
VCC
15
GH2
16
CB2
7
R RX
TX
= 0.5 V
VS
R TX
I KH
20
September 2013
S2
GND
REV. 5
1/17
L9903
Table 2. Pin Function
N
Pin
ST
DG
PWM
Description
Open Drain Switch for Stepup converter
Open drain diagnostic output
PWM input for H-bridge control
EN
Enable input
DIR
PR
RX
TX
10
VS
11
CP
12
GH1
13
CB1
14
S1
Source/drain of halfbridge 1
15
GH2
16
CB2
17
S2
Source/drain of halfbridge 2
18
GL2
19
GL1
20
GND
Ground
ST
20
GND
DG
19
GL1
PWM
18
GL2
EN
17
S2
DIR
16
CB2
PR
15
GH2
RX
14
S1
TX
13
CB1
12
GH1
10
11
CP
VS
SO20
2/17
L9903
Table 3. Absolute Maximum Ratings
Symbol
Parameter
Value
Bootstrap current
VCP
ICP
Unit
-0.3 to 40
-100
mA
-0.3 to 40
-1
mA
-0.3 to 7
mA
VDG ,VRX
-0.3 to 7
IDG ,IRX
-1
mA
-0.3 to VSX + 10
-1
mA
-0.3 to 10
-10
mA
VK
K-line voltage
-20 to VS
VPR
-0.3 to 7
IPR
-1
mA
VS1 , VS2
Source/drain voltage
-2 to VVS + 2
IS1 , IS2
Source/drain current
-10
mA
VST
Output voltage
IST
VVSDC
VVSP
IVS
DC supply voltage
Pulse supply voltage (T < 500ms)
DC supply current
-0.3 to 40
-1
mA
-0.3 to 27
40
-100
mA
For externally applied voltages or currents exceeding these limits damage of the device may occur!
All pins of the IC are protected against ESD. The verification is performed according to MIL883C, human body
model with R=1.5k, C=100pF and discharge voltage 2kV, corresponding to a maximum discharge energy of
0.2mJ.
Table 4. Thermal Data
Symbol
TJ
Parameter
Operating junction temperature
TJSD
TJSDH
Rth j-amb
1)
Value
Unit
-40 to 150
min 150
typ 15
85
C/W
.
3/17
L9903
Table 5. Electrical Characteristcs
(8V < VVS < 20V, VEN = HIGH, -40C TJ 150C, unless otherwise specified. The voltages are refered to
GND and currents are assumed positive, when current flows into the pin
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
20
22
24
Supply (VS)
VVS OVH
VVS OVh
VVS UVH
VVS UVh
Undervoltage threshold
hysteresis 2)
1.6
6
V
7
0.66
IVSL
Supply current
IVSH
V
V
50
8.1
13
mA
5.8
10
mA
Low level
VENH
High level
VENh
Hysteresis threshold 2)
REN
1.5
3.5
1
VEN = 5V
16
V
V
50
V
100
1.5
VDIRH
VPWMH
VDIRh
VPWMh
RDIR
RPWM
3.5
V
1
VDIR = 0; VPWM = 0
16
50
V
100
0.6
V
k
Output drop
IDG = 1mA
RDG
VDG = 0V
10
20
40
2.2
RPR = 10k
1.8
IPR
Current capability
VPR = 2V
-0.5
mA
4/17
1.5
L9903
Table 5. Electrical Characteristcs (continued)
(8V < VVS < 20V, VEN = HIGH, -40C TJ 150C, unless otherwise specified. The voltages are refered to
GND and currents are assumed positive, when current flows into the pin
Symbol
Parameter
VTXH
VTXh
RTX
Test Condition
Min.
Typ.
Max.
3.5
V
1
VTX = 0
10
4.5
Unit
20
V
40
5.5
10
20
90
RRX
TX = HIGH;
VRX = 0V
RRXON
ON resistance to ground
TX = LOW;
IRX = 1mA
40
tRXH
Fig. 1
0.5
tRXL
0.5
-20V
0.45
VVS
VKH
0.55
VVS
VVS
VKh
IKH
Input current
VTX = HIGH
RKON
ON resistance to ground
IKSC
VTX = LOW
0.025
VVS
Transmission frequency
fK
-5
10
40
60
0.8V
25
30
130
100
mA
kHz
tKr
Rise time
tKf
Fall time
tKH
17
tKL
17
tSH
10
40
VVS
+7V
VVS
+10V
VVS
+10V
VVS
+14V
VVS
+14V
VVS
+14V
VVS = 13.5V;
TX = LOW
VK > 0.55 VVS
Charge pump
VCP
VVS = 8V
VVS = 13.5V
VVS = 20V
5/17
L9903
Table 5. Electrical Characteristcs (continued)
(8V < VVS < 20V, VEN = HIGH, -40C TJ 150C, unless otherwise specified. The voltages are refered to
GND and currents are assumed positive, when current flows into the pin
Symbol
Parameter
Test Condition
Min.
Typ.
-50
-75
ICP
Charging current
VCP= VVS + 8V
VVS = 13.5V
tCP
Charging time 2)
VCP= VVS + 8V
VVS = 13.5V
CCP = 10nF
fCP
VVS = 13.5V
250
7.5
10
10
Max.
Unit
A
1.2
ms
500
750
kHz
14
14
14
V
V
V
Bootstrap voltage
RGH1L
RGH2L
10
20
10
20
RGH1H
RGH2H
VGH1H
VGH2H
VVS
+6.5V
VVS
+14V
VVS
+10V
VVS
+14V
VVS
+10V
VVS
+14V
RGH1
RGH2
RS1
RS2
EN = LOW
Sink resistance
10
100
10
100
10
20
RGL1H,
RGL2H
10
20
VGL1H,
VGL2H
EN = LOW
RGL1
RGL2
VVS
VVS
14V
7V
10V
10V
10
100
Fig. 2
VVS = 13.5V
VS1 = VS2 =0
CCBX = 0.1F
RPR= 10kW
6/17
500
ns
L9903
Table 5. Electrical Characteristcs (continued)
(8V < VVS < 20V, VEN = HIGH, -40C TJ 150C, unless otherwise specified. The voltages are refered to
GND and currents are assumed positive, when current flows into the pin
Symbol
Parameter
Test Condition
tGH1LH
tGH2LH
tGH1HL
tGH2HL
tGL1LH
tGL2LH
Fig. 2
VVS = 13.5V
VS1 = VS2 =0
CCBX = 0.1F
tGL1LH
tGL2LH
tGL1HL
tGL2HL
Fig. 2
VVS = 13.5V
VS1 = VS2 =0
CCBX = 0.1F
Fig. 2
VVS = 13.5V
VS1 = VS2 =0
CCBX = 0.1F
Min.
Typ.
Max.
Unit
0.7
1.3
500
ns
500
ns
1.3
500
ns
CPR= 150pF;
RPR= 10k;
5)
RPR= 10k
0.7
CPR= 150pF;
RPR= 10k;
5)
tGH1r
tGH2r
Rise time
tGH1f
tGH2f
Fall time
tGL1r
tGL2r
Rise time
tGL1f
tGL2f
Fall time
Fig. 2
VVS = 13.5V
VS1 = VS2 =0
CCBX = 0.1F
CGHX = 4.7nF
CGLX = 4.7nF
RPR= 10k;
Threshold voltage
Detection time
VSTH
VSTh
fST
Clock frequency
15
10
20
149
kHz
RDSON
10
1
VVS = 5.2V;
IST = 50mA
50
100
7/17
L9903
Figure 4. Timing of the ISO-interface
V
TX
0.7 V V C C
0.3 V V C C
0.3 V V C C
t
t KL
t KH
tKf
tKr
80 %
I K > I K SC
0.55 V V S
0.45 V V S
20%
t
VR X
t R XL
t R XH
0.7 V VC C
0.3 V V C C
t
op en d rain
trans is tor at
K -pin
t SH
ON
O FF
Figure 5. Timing of the drivers for the external MOS regarding the inputs DIR and PWM
PWM
or
DIR
50%
tGHXLH
tGHXr
tGHXHL tGHXf
80%
GHX
20%
tGLXHL tGLXf
tGLXLH
tGLXr
80%
GLX
20%
t
8/17
L9903
Figure 6. I(V) characteristics of the K-Line for TX = HIGH and VVS=13.5V
IK [mA]
0.2
~5
0
0.1
0.0
-0.1
~5
0
-0.2
-0.3
-0.4
-0.5
-20
-10
10
20
VK [V]
D IR
PW M
brakin g
G H1
G L1
G H2
Note:
Before standby mode
(EN = low) a braking phase
is mandatory to discharge
the stored energy of the
motor.
G L2
9/17
L9903
Figure 8. Charging time of an external capacitor of 10nF connected to CP pin at VVS=8V and
VVS=13.5V
voltage [V]
30
CP for VS=13.5V
25
CP for VS=8V
20
15
10
EN
5
0
0
time [ms]
D1
VS
Voltage
Regulator
CS1
10
RCP
CS2
ST
Reference
BIAS
VCC
Charge
pump
= V STH
f ST
VCC
VCC
DG
14
S1
5
R DIR
C1
19
M
GL1
GL2
RGL1
18
RGL2
VCC
17
R PWM
PWM
PR
CPR
RS2
Timer
RPR
ISO-Interface
RX
S2
3
V S2TH =
VCC
CB2
15
GH2
16
CB2
7
R RX
= 0.5 VVS
R TX
TX
GND
10/17
RS1
Control Logic
GH1
Thermal shutdown
REN
DIR
CB1
12
CB1
V S1TH =
EN
CP
13
Overvoltage
Undervoltage
RDG
11
I KH
20
GND
K-Line
L9903
3
FUNCTIONAL DESCRIPTION
3.1 General
The L9903 integrated circuit (IC) is designed to control four external N-channel MOS transistors in H-Bridge configuration for DC-motor driving in automotive applications. It includes an ISO9141 compatible interface. A typical
application is shown in fig.9.
3.2 Voltage supply
The IC is supplied via an external reverse battery protection diode to the VVS pin. The typical operating voltage
range is down to 8V.
The supply current consumption of the IC composes of static and a dynamic part. The static current is typically
5.8mA. The dynamical current Idyn is depending of the PWM frequency fPWM and the required gate charge QGate
of the external power mos transistor. The current can be estimated by the expression:
Idyn = 2 fPWM QGate
An external power transistor with a gate charge of QGate = 160nC and a PWM frequency of fPWM = 20kHz requires a dynamical supply current of Idyn = 6.4mA.
The total supply current consumption is IVS = 5.8mA + 6.4mA = 12.2mA.
3.3 Extended supply voltage range (ST)
The operating battery voltage range can be extended down to 6V using the additional components shown in
fig.7. A small inductor of L~150H (Ipeak~500mA) in series to the battery supply builts up a step up converter
with the switching open drain output ST. The switching frequency is typical 100kHz with a fixed duty cycle of
50%. The step up converter starts below VVS < 8V, increases the supply voltage at the VS pin and switches off
at VVS > 10V to avoid EME at nominal battery voltage. The diode D2 in series with the ST pin is necessary only
for systems with negative battery voltage. No additional load can be driven by the step up converter.
Figure 10.
L9903
VBAT
L1
D1
VS
C1
C2
D2
ST
= VSTH
f ST
11/17
L9903
3.4 Control inputs (EN, DIR, PWM)
The cmos level inputs drive the device as shown in fig.7 and described in the truth table.
The device is activated with enable input HIGH signal. For enable input floating (not connected) or VEN=0V the
device is in standby mode. When activating the device a wake-up time of 50s is recommended to stabilize the
internal supplies.
The DIR and PWM inputs control the driver of the external H-Bridge transistors. The motor direction can be
choosen with the DIR input, the duty cycle and frequency with the PWM input. Unconnected inputs are defined
by internal pull up resistors. During wake-up and braking and before disactivating the IC via enable both inputs
should be driven HIGH.
Table 6. Truth table:
Status
Control inputs
Device status
Diagnostic
Comment
EN
DIR
PWM
TS
OV
UV
SC
GH1
GL1
GH2
GL2
DG
R7)
R7)
standby mode
thermal
shutdown
overvoltage
undervoltage
X6)
X6)
X6)
X6
short circuit 6)
braking mode
R:Resistive output
TS:Thermal shutdown
OV:Overvoltage
UV:Undervoltage
T: Tristate
SC:Short Circuit
6. Only those external MOS transistors of the H-Bridge which are in short circuit condition are switched off. All others remain driven
by DIR and PWM.
7. See Application Note AN2229
12/17
L9903
3.8 Short Circuit Detection
The output voltage at the S1 and S2 pin of the H-Bridge is monitored by comparators to detect shorts to ground
or battery. The activated external highside MOS transistor will be switched off if the voltage drop remains below
the comparator threshold voltage VS1TH and VS2TH for longer than the short current detection time tSCd. The
transistor remains in off condition, the diagnostic output goes LOW until the DIR or PWM input status will be
changed. The status doesn't change for the other MOS transistors. The external lowside MOS transistor will be
switched off if the voltage drop passes over the comparator threshold voltage VS1TH and VS2TH for longer than
the short current detection time tSCd. The transistor remains in off condition, the diagnostic output goes LOW
until the DIR or PWM input status will be changed. The status doesn't change for the other MOS transistors.
3.9 Diagnostic Output (DG)
The diagnostic output provides a real time error detection, if monitors the following error stacks: Thermal shutdown, overvoltage shutdown , undervoltage shutdown and short circuit shutdown. The open drain output with
internal pull up resistor is LOW if an error is occuring.
3.10 Bootstrap capacitor (CB1,CB2)
To ensure, that the external power MOS transistors reach the required RDSON, a minimum gate source voltage
of 5V for logic level and 10V for standard power MOS transistors has to be guaranteed. The highside transistors
require a gate voltage higher than the supply voltage. This is achieved with the internal chargepump circuit in
combination with the bootstrap capacitor. The bootstrap capacitor is charged, when the highside MOS transistor
is OFF and the lowside is ON. When the lowside is switched OFF, the charged bootstrap capacitor is able to
supply the gate driver of the highside power MOS transistor. For effective charging the values of the bootstrap
capacitors should be larger than the gate-source capacitance of the power MOS and respect the required PWM
ratio.
3.11 Chargepump circuit (CP)
The reverse battery protection can be obtained with an external N-channel MOS transistor as shown in fig.6. In
this case its drain-bulk diode provides the protection. The output CP is intended to drive the gate of this transistor above the battery voltage to switch on the MOS and to bypass the drain-bulk diode with the RDSON. The
CP has a connection to VS through an internal diode and a 20k resistor.
3.12 Gate drivers for the external N-channel power MOS transistors (GH1, GH2, GL1, GL2)
High level at EN activates the driver of the external MOS under control of the DIR and PWM inputs (see truth
table and driving sequence fig.4). The external power MOS gates are connected via series resistors to the device to reduce electro magnetic emission (EME) of the system. The resistors influence the switching behaviour.
They have to be choosen carefully. Too large resistors enlarge the charging and discharging time of the power
MOS gate and can generate cross current in the halfbridges. The driver assures a longer switching delay time
from source to sink stage in order to prevent the cross conduction.
The gate source voltage is limited to 14V. The charge/discharge current is limited by the RDSON of the driver.
The drivers are not protected against shorts.
3.13 Programmable cross conduction protection
The external power MOS transistors in H-Bridge ( two half bridges) configuration are switched on with an additional delay time tCCP to prevent cross conduction in the halfbridge. The cross conduction protection time tCCP
is determined by the external capacitor CPR and resistor RPR at the PR pin. The capacitor CPR is charged up
to the voltage limit VPRH. A level change on the control inputs DIR and PWM switches off the concerned external
MOS transistor and the charging source at the PR pin. The resistor RPR discharges the capacitor CPR. The concerned external power MOS transistor will be switched on again when the voltage at PR reaches the value of
VPRL. After that the CPR will be charged again. The capacitor CPR should be choosen between 100pF and 1nF.
The resistor RPR should be higher than 7kW. The delay time can be expressed as follows:
13/17
L9903
tCCP= RPR CPR ln NPR
VCC
0.5 V VS
R TX
TX
I KH
R
Q
S
14/17
R delay
T SH
L9903
Figure 12. SO20 Mechanical Data & Package Dimensions
mm
inch
DIM.
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
2.35
2.65
0.093
0.104
A1
0.10
0.30
0.004
0.012
0.33
0.51
0.013
0.200
0.23
0.32
0.009
0.013
D (1)
12.60
13.00
0.496
0.512
7.40
7.60
0.291
0.299
1.27
0.050
10.0
10.65
0.394
0.419
0.25
0.75
0.010
0.030
0.40
1.27
0.016
0.050
k
ddd
OUTLINE AND
MECHANICAL DATA
0 (min.), 8 (max.)
0.10
0.004
SO20
0016022 D
15/17
L9903
Table 7. Revision History
Date
Revision
January 2004
October 2005
23-Sep-2013
Updated Disclaimer
16/17
Description of Changes
L9903
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