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Napsonistheonlyvendorintheworld,whomanufacturesandsells2kindsofresistance
measurementequipment.
Contacttypeswith4pointprobeandNoncontacttypes,suchaseddycurrent
measurement.
HerearetheelectricalresistanceprincipleswhichcanbemeasuredbyNapsonresistance

Contacttyperesistance
measurement
NonContacttype
resistancemeasurement
Lifetimemeasurement

measurementsystems.

PNtypechecker

*IfyouwantPDFle[Measurementprinciples&methodsofResistance],pleaseclick

Spreadingresistance
measurement

thebannerasfollows.

4pointprobehead

Flatness/Thickness
measurement

Thedenitionofresistancemeasurement
Generally,electricalresistance(Resistance)isusedasevaluationoftheconductivity(Easeof
electricconductance)ofasubstanceormaterial.
Asavaluationbasisofelectricalresistance,theunit(ohm)isused.

ElectricResistance(Ohm)
technicalinfo

R=V/I*V=VoltageI=Current
Theinsulationresistance,forexample,measuredbyadigitalmultimeter(insulation
resistancetester)isdenotedbytheunit,ohm.

Worldwide

Theelectricalresistanceforasemiconductororthinlmmeasurementisdenedby
standards,suchasSEMI(ASTM)andJIS.

Resistivitycm(ohmcentimeter)

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[orSpeciclectricalresistance,Volumeresisance]

Aftersalesservice

Resistivityisusedforvolumeresistanceforasubstance.
Whenitexpressestheelectricalresistanceofacertainmaterial,suchasasiliconwafer,bulk
oraconductiverubberplastic,thistermisused.

ChnNgnng
chtrbi

Dch

Electricalresistance:Whentheelectricresistivityis,thelengthisLandcrosssectional
areaforaconductorisA
TheRisgivinby;

R[L/A]
Whereisgivenby

V/I[A/L]
*Whentheunitissettocm,thevolumeisshownbycubicmeasure,suchas1cmx1cmx
1cm.
Itmaybeshownbym(ohmmeter)dependingonthemeasuringobject.

Sheetresistance/(ohmpersquare)
Thesurfaceresistanceforamaterial
Whenitexpressestheelectricalresistanceofasheet(suchasathinlmoralmlike
substance),thistermisused.

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Whenitexpressesthreedimensionalconductivity,resistanceisgivinby

RL/AL/Ws
Whenthelengthofasample[L]andthewidth[W]areequal,theresistance[R]andhesheet
resistance[]willbecomeequal.
Moreover,Sheetresistance[s]isthevaluewhichdividedresistivity[]bythickness[t].

Contact:4pointprobemeasurement
Thisdescribestheresistancemeasurementprincipleforacontacttype(4pointprobe
measurementmethod)
Fourmetallicprobepinsareappliedtothesurfaceofaspecimen,beinglinedup,andcurrent
ismadetoowthroughthetwooutermostprobepins.
Whenthedierenceinpotentalbetweenthetowintermediateprobepinsismeasured,the
resistivity(orsheetresistance)canbefoundfromtheshownequation.
*Resistivitymeasurement&sheetresistancemeasurementarethesamemeasurement
principle.
4pointprobemeasurementsystemsmadebyNapsonserveasameasuringmethodandthe

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compensationmethodbasedonJISandanASTM(SEMI)standards.
Thissystemisrelieduponasanindustrialstandardmeasurementsystembythesilicon
wafers/ingotsrelatedusersinJapanandAsia.
Moreover,itprovidestraceabilitytoNIST(NationalInstituteStandardTechnologies[USA])
standardsandresistivitysamples.
Instruments/systemsareshippedaftercalibratiosandcarefultestingwithstandardsamples
atthefactory.

Measurementprinciple(Resistivity)

Measurementprinciple(SheetResistance)

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http://www.monozukuri.org/mono/db
dmrc/pvdcvddb/outline/evaluation/fourprobeelectricalresistivity.html
TheNapson4pointprobemethodinstrumentcomplieswiththefollowingJapanese
IndustrialStandards(JIS)andAmericanSocietyforTestingandMaterials(ASTM).

JapanIndustrialStandards
JISH06021995
TestingMethodOfResistivityForSiliconCrystalsAndSiliconWafersWithFourpointProbe

JISK71941994
Testingmethodforresistivityofconductiveplasticswithafourpointprobearray

AmericanSocietyforTestingandMaterials
ASTMF8499SEMIMF84
StandardTestMethodforMeasuringResistivityofSiliconWafersWithanInlineFourPoint
Probe

ASTMF37400a
StandardTestMethodforSheetResistanceofSiliconEpitaxial,Diused,PolysiliconandIon
implantedLayersUsinganInLineFourPointProbewiththeSingleCongurationProcedure

ASTMF39011
StandardTestMethodforSheetResistanceofThinMetallicFilmsWithanCollinearFour
ProbeArray

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ASTMF152997
StandardTestMethodforSheetResistanceUniformityEvaluationbyInLineFourPointProbe
withtheDualCongurationProcedure

Noncontact;Eddycurrentmeasurement
Thisdescribestheresistancemeasurementprincipleforanoncontacttype(eddycurrent
method).
(*WithNapsonproducts,therearealsoinstrumentsforothernoncontactresistancemeasurementmethods
accordingtotheresistancerange.Pleaserefererencehere.Pleasecontactusaboutnoncontacttype
measurementprinciplesotherthananeddycurrentmethod.)

Thenoncontacttype(eddycurrentmethod)performsmeasurementofresistivityandsheet
resistancebyusingtheeddycurrentwhichoccursbyelectromagneticinductionwithina
specimen.
Aneddycurrentiscircularcurrentwhichformsinaconductorduetoelectromagnetic
induction[Lenzslaw],whenthemagneticuxwhichpassesalongaconductorchanges.

Themagneticuxischangedbyaddinghighfrequencycomponentbetweentheprobes
(magneticbody),arrangedonboth

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sides(upperandlowersides)betweenthexedgap,whereaneddycurrentowsthrough
thesampleinsertedbetweengaps.
(*Napsoncanoerothermodelswithonesideprobeversion)
Atthistime,aneddycurrentowsintothedirectionwhichresistschangeofthemagnetic
uxbyelectromagneticinduction[Lenzslaw].

Pc=EtI=Et(Io+Ie
Pc:HighfrequencyconsumedpowerI:HighfrequencydrivecurrentEt:High
frequencyvoltage
Io:Highfrequencydrivecurrent[Withoutsample]Ie:Highfrequencydrivecurrent[atthe
samplemeasurement]
Theabsorptionofhighfrequencypowerinthesamplebythegeneratededdycurrentislost
asJouleheat.
Theresistivity/sheetresistanceofthesamplecanbemeasuredwiththenoncontactmethod
bymeasuringtheabsorptionvalueofhighfrequencypower,
becausethisabsorptionandtheconductivity(reciprocalofresistivity)andthicknessofa
samplehaveadirectrelationship.
(*TheJouleheatissosmallthatneitherthesamplenortheareaisaected.)
Moreover,theinuenceofcontactresistanceinthecaseofacontacttypecanbeeliminated.
ExplanationofNoncontact(Dualprobes)andNondestructive(Singleprobe)
http://www.monozukuri.org/mono/db
dmrc/pvdcvddb/outline/evaluation/eddycurrentelectricalresistivity.html
Asmentionedabove,theresistivity(orsheetresistance)ismeasuredbyinsertingasample
inthegapbetweentheprobes.
Therefore,restrictionsontheformofaprobedependuponthethicknessandcorresponding
sizeofasample.
Restrictionsofthethicknessofasample:thegapbetweenprobesisusually2mm.
Restrictionsofthesizeofasample:Alargespecimenhasalimitonthemeasurement
head.
Napsonoersthetechnologyofasinglesidedandhandprobetomeasureabigorthick

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samplewithasimpleandeasyoperationasshownbelow.
[Nondestructive(Singleprobe)typesystem:
EC80P]

Products

Lifetimemeasurement

Napson'sadvantage

Contacttyperesistancemeasurement

HF90R

Napson'sadvantage

HF100DCA

Forsystemselection&
installtion

Manualtype(1pointmeasurement)
RT70Vseries
TCR600
DUORES
Semiautomatictype(Multipointmeasurement)
Cresbox
RT3000/RG2000(RG3000)
RG100PV
Fullautomatictype(withsampletransfersystem)
WS8800
WS3000
RT3000/RG1000F
RT3000/RS1300

HF300

PNtypechecker
PN12

Companyprole

PN100BI

SalesAchievement

Spreadingresistance
measurement
SRS2010

4pointprobehead

Manualtype(1pointmeasurement)

Flatness/Thickness
measurement

EC80P(Portable)

AboutNAPSON

PN8LP

4pointprobehead

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Demomeasurement

PN50

NonContacttyperesistancemeasurement
EC80

Measurementrange

Ourvision

TechnicalInfo
Worldwide
Aftersalesservice
Contact
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Termsofuse

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EC80P(Portable)
NC10(NC20)

FLA200

DUORES
Semiautomatictype(Multipointmeasurement)
NC80MAP
CRN100
Fullautomatictype(withsampletransfersystem)
NC60F/RS1300N
NC6800
NC3000R
Builtinmodule
NC110(NC110PV)
NC600
NC700

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