Académique Documents
Professionnel Documents
Culture Documents
Overview
Motivation
Past works
Modeling
Results
Parametric Studies
Conclusion
Quantifying Temperature
TEHL
Modeling
Cheng et al. '65
Cheng et al. '01
Kim et al. '01
Wang et al. 04
Habchi et al. '08
Khan et al. '09
Modeling
Hocheng et al. '99
White et al. '03
Borucki et al. '04
Li et al. '04
Oh and Seok '08
Experiments
Modeling
Experiments
Objective
To model the thermal changes in the pad, wafer and
the slurry during CMP
PAML lite
Contact Mechanics
Film thickness
Particle Dynamics
Uniform
Concentration
Size distribution
Separation
h = h(r,)
d = d(r,)
Hydrodynamic
Pressure
Elastic Contact
Material Removal
Rate
MRR = f(,w,,V)
Active Particles
= (z, F, E)
p = p[h, , ]
Wear
Nactive=f (G, , )
Equilibrium
Particle Indentation
= f (, Hw*, pd)
Contact Mechanics
Film thickness
Separation
h = h(r,)
d = d(r,)
Hydrodynamic
Pressure
Elastic Contact
= (z, F, E)
p = p[h, , ]
Equilibrium
Particle Dynamics
Uniform
Concentration
Size distribution
Wear
Material Removal
Rate
MRR = f(,w,,V)
Thermal Effects
Pad, Wafer, Slurry
Temperature
T = f(,)
Active Particles
Nactive=f (G, , )
Particle Indentation
= f (, Hw*, pd)
Winkler
Foundation
Fz,Mx,
My = 0
NO
Root Finder
YES
Equilibrium orientation
{,,}, p(r,), (r,)
Calculate Active
Particles
Calculate Average
Wear
Calculate Temperatures
THERMAL MODELING
Case I: Pad and wafer temperatures without slurry
Case II: Pad and wafer temperatures with slurry
12
Interactions
T1
Assumptions
T2
Pad Temperature
Wafer Temperature
Wafer
Overview
Interactions
T1
Assumptions
T2
20
Twafer
WAFER
q (flux)
FLUID
Tpad
PAD
24
Results
25
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
10000
20000
30000
40000
50000
60000
70000
80000
26
Parametric Studies
45
MRR
deltaT
0.007
40
35
30
0.005
25
0.004
20
0.003
MRR (nm/min)
0.006
15
0.002
10
0.001
0
0
0.002
0.004
0.006
0.008
0.01
0
0.012
Viscosity (Pa-s)
27
Parametric Studies
0.05
0.04
0.03
0.02
0.01
Kpad
0.1
10
100
Kwafer
28
Conclusion
29
Acknowledgements
30
QUESTIONS ?
APPENDIX