HITFET II.

Generation BSP 77

Smart Lowside Power Switch

Features

Product Summary

Logic Level Input

Drain source voltage

VDS

Input Protection (ESD)

On-state resistance

RDS(on)

100

mW

Thermal shutdown with

Nominal load current

ID(Nom)

2.17

Clamping energy

EAS

250

mJ

auto restart

42

Overload protection
Short circuit protection

Overvoltage protection
3

Current limitation

Analog driving possible

VPS05163

Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
C compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Vbb

HITFET

Drain

Current
Limitation
In

Pin 2 and 4 (TAB)

OvervoltageProtection

Gate-Driving
Unit

Pin 1

ESD

Overload
Protection

Overtemperature
Protection

Short circuit
Protection
Pin 3
Source

Complete product spectrum and additional information http://www.infineon.com/hitfet

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BSP 77
Maximum Ratings at Tj = 25C, unless otherwise specified
Parameter

Symbol

Drain source voltage

VDS

42

Supply voltage for full short circuit protection

Vbb(SC)

42

Continuous input voltage1)

VIN

Continuous input current2)

IIN

-0.2V VIN 10V

Value

Unit
V

-0.22) ... +10

mA
self limited
| IIN | 2

VIN < -0.2V or VIN > 10V

Operating temperature

Tj

-40 ...+150

Storage temperature

Tstg

-55 ... +150

Power dissipation 5)

Ptot

3.8

Unclamped single pulse inductive energy 2)

EAS

250

mJ

Load dump protection VLoadDump2)3) = VA + VS

VIN = 0 and 10 V, td = 400 ms, RI = 2 W,

VLD

50

kV

TC = 85 C

RL = 6 W, VA = 13.5 V
Electrostatic discharge voltage2) (Human Body Model) VESD
according to Jedec norm
EIA/JESD22-A114-B, Section 4
MSL 1

Jedec humidity category,J-STD-20-B

IEC climatic category; DIN EN 60068-1

40/150/56

Thermal resistance
RthJA

junction - ambient:

K/W

@ min. footprint

125

@ 6 cm 2 cooling area 4)

72

junction-soldering point:

RthJS

17

K/W

1For input voltages beyond these limits I has to be limited.

IN
2not subject to production test, specified by design
3V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for drain
connection. PCB mounted vertical without blown air.
5not subject to production test, calculated by R
thJA and Rds(on)
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BSP 77
Electrical Characteristics
Parameter

Symbol

at Tj = 25C, unless otherwise specified

Values

Unit

min.

typ.

max.

42

55

Characteristics
Drain source clamp voltage

VDS(AZ)

Tj = - 40 ...+ 150 C, ID = 10 mA
Off-state drain current

IDSS

TJ = -40...+85 C, VDS = 32 V, V IN = 0 V

1.5

Tj = 150 C

12

Input threshold voltage

VIN(th)

ID = 0.6 mA, T j = 25 C
ID = 0.6 mA, T j = 150 C
On state input current

IIN(on)

On-state resistance

RDS(on)

1.3

1.7

2.2

0.8

10

30

mW

VIN = 5 V, ID = 2.17 A, Tj = 25 C

90

120

VIN = 5 V, ID = 2.17 A, Tj = 150 C

160

240

VIN = 10 V, I D = 2.17 A, Tj = 25 C

70

100

VIN = 10 V, I D = 2.17 A, Tj = 150 C

130

200

2.17

2.8

10

15

20

On-state resistance

RDS(on)

Nominal load current 5)

ID(Nom)

VDS = 0.5 V, Tj < 150C, VIN = 10 V, T A = 85 C

Current limit (active if VDS>2.5 V)1)

ID(lim)

VIN = 10 V, VDS = 12 V, t m = 200 s

1Device switched on into existing short circuit (see diagram Determination of I

D(lim) ). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 s.
5not subject to production test, calculated by R
thJA and Rds(on)
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BSP 77
Electrical Characteristics
Parameter

Symbol

at Tj = 25C, unless otherwise specified

Values

Unit

min.

typ.

max.

ton

40

100

RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V

Turn-off time
VIN to 10% ID:

toff

70

100

RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V

Slew rate on
70 to 50% Vbb:

-dVDS/dt on

0.4

1.5

RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V

Slew rate off
50 to 70% Vbb:

dVDS/dtoff

0.6

1.5

150

175

Dynamic Characteristics
Turn-on time

VIN to 90% ID :

V/s

RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V

Protection Functions1)
Thermal overload trip temperature

Tjt

Thermal hysteresis 2)

DTjt

10

Input current protection mode

IIN(Prot)

100

300

EAS

250

mJ

VSD

1.5

Tj = 150 C
Unclamped single pulse inductive energy 2)
ID = 2.17 A, Tj = 25 C, Vbb = 12 V

Inverse Diode
Inverse diode forward voltage

IF = 10.9 A, tm = 250 s, V IN = 0 V,
tP = 300 s

1Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2not subject to production test, specified by design
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BSP 77

Block diagram
Inductive and overvoltage
output clamp

Terms

RL

V
I IN
1

IN

2
ID

VDS

Vbb

HITFET

VIN

HITFET

Short circuit behaviour

Input circuit (ESD protection)

Gate Drive
Input

VIN

Source/
Ground

IIN

IDS

Tj

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BSP 77
1 Maximum allowable power dissipation

2 On-state resistance

Ptot = f(TS) resp.

RON = f(Tj ); ID=2.17A; VIN =10V

Ptot = f(TA) @ R thJA=72 K/W

10

225

mW
8

175

RDS(on)

max.

Ptot

max.

150
typ.

125
5

100
4

75

3
2 6cm2

50

25

0
-75

-50

-25

25

50

75

100 C

0
-50

150

-25

25

50

75

100 125 C

TS ;TA

3 On-state resistance

4 Typ. input threshold voltage

RON = f(T j); ID= 2.17A; V IN=5V

VIN(th) = f(Tj); ID = 0.3 mA; V DS = 12V

250

max.

mW

1.6

175
typ.

150

VGS(th)

RDS(on)

200

1.4
1.2

125

100

0.8

75

0.6

50

0.4

25

0.2

0
-50

175

Tj

-25

25

50

75

100 125 C

0
-50

175

Tj

-25

25

50

75

100

150

Tj
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BSP 77
5 Typ. transfer characteristics

6 Typ. short circuit current

I D=f(V IN); VDS=12V; T Jstart=25C

ID(lim) = f(Tj); VDS=12V

Parameter: VIN

16

24

20

10

ID

ID

12

18

8
16
6

0
1

14

Vin=10V

12

5V

10
-50

10

-25

25

50

75

VIN

8 Off-state drain current

I D=f(V DS); T Jstart=25C

Parameter: VIN

IDSS = f(Tj)
13
A

Vin=10V

7V

max.

11

16

6V

10

IDSS

5V

14

ID

175

Tj

7 Typ. output characteristics

20

100 125 C

4V

12

9
8
7

10

6
8

typ.

3V

2
2
0
0

1
1

0
-50

VDS

-25

25

50

75

100 125 C

175

Tj
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BSP 77
9 Typ. overload current

10 Typ. transient thermal impedance

ID(lim) = f(t), Vbb=12 V, no heatsink

ZthJA=f(tp) @ 6 cm2 cooling area

Parameter: Tjstart

Parameter: D=tp/T
10 2

25

K/W

D=0.5

15

10 1

25C

0.2
0.1

ZthJA

ID(lim)

-40C

0.05

10 0

0.02
0.01

10
+150C

10 -1

85C

Single pulse

0
0

ms

10 -2 -7
-6
-5
-4
-3
-2
-1
0
1
10 10 10 10 10 10 10 10 10

10

tp

11 Determination of ID(lim)
ID(lim) = f(t); t m = 200s
Parameter: TJstart
25

ID(lim)

-40C

15

25C
85C

10

150C

0
0

0.1

0.2

0.3

0.4

ms

0.6

t
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BSP 77

Package

Ordering Code

SOT-223

Q67060-S7202-A3
1.6 0.1

6.5 0.2

+0.2
acc. to
DIN 6784

3.5 0.2

7 0.3

15 max

0.1 max

3 0.1

0.5 min

0.28 0.04

2.3

0.7 0.1
4.6

0.25

0.25

B
GPS05560

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BSP 77
Revision History :
Previous version :

2004-03-05
2003-04-22

Page

Subjects (major changes since last revision)

2, 4

Footnote 2 extended to Vin<0V, Etot and TjT

2, 3

Footnote 5 implemented to Ptot and ID(nom)

ESD test condition changed from MIL STD 883D, methode 3015.7 and EOS/ESD assn.
standard S5.1-1993 to Jedec Norm EIA/JESD22-A114-B, Section 4

Humidity category classification changed from DIN 40040 value E to J-STD-20-B value MSL1

Climatic category changed from DIN IEC 68-1 to DIN EN 60068-1

VIN(th) test conditions from ID=0.3mA to ID=0.6mA

For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany
or the Infineon Technologies Companies and Representatives worldwide: see our webpage at
http://www.infineon.com
HITFET, SIPMOS are registered trademarks of Infineon Technologies AG.

Edition 2004-02-02
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 Mnchen, Germany
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

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