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FDN5618P

60V P-Channel Logic Level PowerTrench MOSFET


General Description

Features

This 60V P-Channel MOSFET uses Fairchilds high


voltage PowerTrench process. It has been optimized for
power management applications.

1.25 A, 60 V. RDS(ON) = 0.170 @ VGS = 10 V


RDS(ON) = 0.230 @ VGS = 4.5 V

Applications

Fast switching speed

DC-DC converters

High performance trench technology for extremely


low RDS(ON)

Load switch
Power management

S
TM

SuperSOT -3

Absolute Maximum Ratings


Symbol

G
TA=25oC unless otherwise noted

Ratings

Units

VDSS

Drain-Source Voltage

Parameter

60

VGSS

Gate-Source Voltage

20

ID

Drain Current

1.25

Continuous

(Note 1a)

Pulsed

10

Maximum Power Dissipation

PD
TJ, TSTG

(Note 1a)

0.5

(Note 1b)

0.46

55 to +150

(Note 1a)

250

C/W

(Note 1)

75

C/W

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA

Thermal Resistance, Junction-to-Ambient

RJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information


Device Marking

Device

Reel Size

Tape width

Quantity

618

FDN5618P

8mm

3000 units

2000 Fairchild Semiconductor Corporation

FDN5618P Rev C(W)

FDN5618P

October 2000

Symbol

Parameter

TA = 25C unless otherwise noted

Test Conditions

Min

Typ

Max Units

58

mV/C

Off Characteristics
BVDSS

DrainSource Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
===TJ
IDSS

Breakdown Voltage Temperature


Coefficient
Zero Gate Voltage Drain Current

ID = 250 A,Referenced to 25C


VDS = 48 V,

VGS = 0 V

IGSSF

GateBody Leakage, Forward

VGS = 20V,

VDS = 0 V

100

nA

IGSSR

GateBody Leakage, Reverse

VGS = 20 V

VDS = 0 V

100

nA

On Characteristics

60

(Note 2)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

VGS(th)
===TJ
RDS(on)

Gate Threshold Voltage


Temperature Coefficient

ID = 250 A,Referenced to 25C

Static DrainSource
OnResistance

0.148
0.185
0.245

ID(on)

OnState Drain Current

VGS = 10 V,
ID = 1.25 A
VGS = 4.5 V,
ID = 1.0 A
VGS = 10 V, ID = 3 A TJ=125C
VGS = 10 V,
VDS = 5 V

gFS

Forward Transconductance

VDS = 5 V,

ID = 1.25 A

4.3

VDS = 30 V,
f = 1.0 MHz

V GS = 0 V,

430

pF

52

pF

19

pF

1.6

V
mV/C

0.170
0.230
0.315

A
S

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Switching Characteristics
td(on)

TurnOn Delay Time

tr

TurnOn Rise Time

td(off)

TurnOff Delay Time

tf

TurnOff Fall Time

Qg

Total Gate Charge

Qgs

GateSource Charge

Qgd

GateDrain Charge

(Note 2)

VDD = 30 V,
VGS = 10 V,

VDS = 30 V,
VGS = 10 V

ID = 1 A,
RGEN = 6

ID = 1.25 A,

6.5

13

ns

16

ns

16.5

30

ns

ns

8.6

13.8

nC

1.5

nC

1.3

nC

DrainSource Diode Characteristics and Maximum Ratings


IS
VSD

Maximum Continuous DrainSource Diode Forward Current


DrainSource Diode Forward
VGS = 0 V, IS = 0.42
Voltage

(Note 2)

0.7

0.42
1.2

A
V

Notes:
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 250C/W when mounted on a
0.02 in2 pad of 2 oz. copper.

b) 270C/W when mounted on a


minimum pad.

Scale 1 : 1 on letter size paper


2. Pulse Test: Pulse Width =300 s, Duty Cycle =2.0

FDN5618P Rev C(W)

FDN5618P

Electrical Characteristics

FDN5618P

Typical Characteristics

2.2

VGS = -10V

-6.0V
4

-4.5V

VGS = -3.0V

-4.0V
-3.5V

1.8

-3.0V

1.6

-3.5V

1.4

-4.0V
-4.5V

1.2

-2.5V

-6.0V
-10V

1
0.8

0
0

-ID, DRAIN CURRENT (A)

-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with


Drain Current and Gate Voltage.
0.6

1.3

ID = -1.25A
VGS = -10V

ID = -0.65 A

1.2

0.5

1.1

0.4

0.3

0.9

0.2

TA = 125 C

TA = 25 C
0.8
-50

-25

25

50

75

100

125

150

0.1
2

TJ, JUNCTION TEMPERATURE ( C)

Figure 3. On-Resistance Variation


withTemperature.

10

10

VGS = 0V

25 C

TA = 125 C

Figure 4. On-Resistance Variation with


Gate-to-Source Voltage.

6
VDS = - 5V

-VGS, GATE TO SOURCE VOLTAGE (V)

-55 C
4

TA = 125 C

0.1

25 C
3

-55 C

0.01
2
0.001
1
0.0001

0
1

1.5

2.5

3.5

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics.

0.2

0.4

0.6

0.8

1.2

1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6. Body Diode Forward Voltage Variation


with Source Current and Temperature.

FDN5618P Rev C(W)

FDN5618P

Typical Characteristics

10

700
VDS = -20V

ID = -1.25A
8

f = 1MHz
VGS = 0 V

600

-30V
-40V

500

CISS

400
300

200
2

COSS

100

CRSS
0

0
0

10

Qg, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics.

10

20

10

12

Figure 8. Capacitance Characteristics.

100

-ID, DRAIN CURRENT (A)

-VDS, DRAIN TO SOURCE VOLTAGE (V)

RDS(ON) LIMIT

1ms

SINGLE PULSE
RJA = 270C/W
TA = 25C

15

10ms

100ms

0.1

DC

VGS =-10V
SINGLE PULSE
RJA = 270oC/W

0.01

10s

10

1s

TA = 25 C
0

0.001
0.1

10

100

0.001

0.01

0.1

-VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

100

1000

Figure 10. Single Pulse Maximum


Power Dissipation.

D = 0.5

RJA(t) = r(t) + RJA

0.2
0.1

0.1

10

t1, TIME (sec)

RJA = 270 C/W

0.05
0.02

P(pk)

0.01

t1
t2

0.01
SINGLE PULSE

TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2

0.001
0.0001

0.001

0.01

0.1

10

100

1000

t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.


Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.

FDN5618P Rev C(W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
DOME
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series
FAST

FASTr
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
MICROWIRE
OPTOLOGIC
OPTOPLANAR
POP
PowerTrench

QFET
QS
QT Optoelectronics
Quiet Series
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
UHC

VCX

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for


product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild


Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. F1

Mouser Electronics
Authorized Distributor

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FDN5618P