UNISONIC TECHNOLOGIES CO.

, LTD
11N90

Power MOSFET

11 Amps, 900 Volts

N-CHANNEL POWER MOSFET

DESCRIPTION

The UTC 11N90 is an N-channel enhancement mode Power FET

using UTCs advanced technology to provide customers with
planar stripe and DMOS technology. This technology specializes in
allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC 11N90 is universally applied in high efficiency switch
mode power supply,

FEATURES

* RDS(on) < 1.1 @ VGS = 10V, ID = 5.5A

* High switching speed
* Improved dv/dt capability
* 100% avalanche tested

SYMBOL

ORDERING INFORMATION

Ordering Number
Package
Lead Free
Halogen Free
11N90L-TA3-T
11N90G-TA3-T
TO-220
11N90L-TF1-T
11N90G-TF1-T
TO-220F1
11N90L-TF2-T
11N90G-TF2-T
TO-220F2
TO-3P
11N90L-T3P-T
11N90G-T3P-T
TO-3PN
11N90L-T3N-T
11N90G-T3N-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
11N90L-TA3-T

Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S

Packing
Tube
Tube
Tube
Tube
Tube

(1) T: Tube
(1) Packing Type
(2) Package Type
(3) Green Package

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Copyright 2014 Unisonic Technologies Co., Ltd

(2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2

T3P: TO-3P, T3N: TO-3PN
(3) L: Lead Free, G: Halogen Free and Lead Free

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Power MOSFET

MARKING

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ABSOLUTE MAXIMUM RATINGS(TC=25C, unless otherwise specified)

PARAMETER

RATINGS
UNIT
900
V
30
V
Continuous
11
A
Drain Current
Pulsed (Note 1)
44
A
Avalanche Energy
Single Pulsed (Note 2)
1000
mJ
Peak Diode Recovery dv/dt (Note 3)
4.0
V/ns
TO-220
160
W
Power Dissipation
TO-220F1/TO-220F2
PD
50
W
TO-3P/TO-3PN
215
W
Junction Temperature
TJ
+150
C
Storage Temperature
TSTG
-55~+150
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Drain-Source Voltage
Gate-Source Voltage

SYMBOL
VDSS
VGSS
ID
IDM
EAS
dv/dt

THERMAL CHARACTERISTICS

Junction to Ambient

Junction to Case

PARAMETER
TO-220/TO-220F1
TO-220F2
TO-3P/TO-3PN
TO-220
TO-220F1/TO-220F2
TO-3P/TO-3PN

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SYMBOL
JA

JC

RATINGS

UNIT

62.5

C/W

40
0.78
2.48
0.58

C/W
C/W
C/W
C/W

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ELECTRICAL CHARACTERISTICS (TC=25C, unless otherwise noted)

PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate- Source Leakage Current

SYMBOL
BVDSS

ID=250A, VGS=0V

IGSS

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TYP MAX UNIT

900

V
1.0

VDS=900V, VGS=0V
VDS=720V, TC=125C
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V

ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250A
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
Output Capacitance
COSS
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
Gate to Source Charge
QGS
(Note 4, 5)
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=0.5A, RG=25
(Note 4, 5)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
(Note1)
Drain-Source Diode Forward Voltage
VSD
IS=11A, VGS=0V
(Note 4)
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. L = 15mH, IAS = 11A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 11.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test: Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

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MIN

BVDSS/TJ ID=250A, Referenced to 25C

IDSS
Forward
Reverse

TEST CONDITIONS

V/C
10
100
100
-100

3.0

A
nA
nA

0.91

5.0
1.1

980
170
18

1380
280
25

pF
pF
pF

60
14
22
125
260
340
220

80

140
320
380
270

nC
nC
nC
ns
ns
ns
ns

11

44

1.4

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TEST CIRCUITS AND WAVEFORMS

Gate Charge Test Circuit

Gate Charge Waveforms

VGS

Same Type
as DUT
12V

QG

10V

200nF
50k

VDS

300nF

QGS

QGD

VGS
DUT
3mA
Charge

Unclamped Inductive Switching Waveforms

Unclamped Inductive Switching Test Circuit

2
EAS= 1
2 LIAS

VDS
RG

BVDSS
BVDSS-VDD

BVDSS

ID

IAS

10V

ID(t)
DUT

tP

VDD

VDD

VDS(t)

tP

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Time

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TEST CIRCUITS AND WAVEFORMS

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

RG

L
ISD
VGS

VDD
Driver
Same Type
as DUT

dv/dt controlled by RG
ISD controlled by pulse period

VGS
(Driver
)

D=

Gate Pulse Width

Gate Pulse Period

10V

IFM, Body Diode Forward Current

ISD
(DUT)

di/dt
IRM
Body Diode Reverse Current

VDS
(DUT)

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward

Voltage Drop

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TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source

Breakdown Voltage

250

250
Drain Current, ID (A)

Drain Current, ID (A)

300

Drain Current vs. Gate Threshold Voltage

300

200
150
100

200
150
100

50

50

0
0

0
300
600
900
1200
Drain-Source Breakdown Voltage, BVDSS (V)

VGS=10V, ID=5.5A

4
3
2
1
0
0

1
2
3
4
5
6
Drain to Source Voltage, VDS (V)

Body-Diode Continuous Current, IS (A)

Drain Current, ID (A)

Body-Diode Continuous Current vs.

Source to Drain Voltage

Drain-Source On-State Resistance

Characteristics
6

1
2
3
4
5
Gate Threshold Voltage, VTH (V)

25
20
15
10

5
0
0

0.2
0.4
0.6
0.8
1.0
Source to Drain Voltage, VSD (V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

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