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ANJALAI AMMAL MAHALINGAM ENGINEERING COLLEGE


KOVILVENNI 614 403
DEPARTMENT OF E.C.E

ISO 9001:2008 CERTIFIED

LESSON PLAN
NAME OF THE FACULTY
: V.DEEPA
DEPARTMENT
: ELECTRONICS AND COMMUNICATION
SUBJECT CODE & SUBJECT
: EC6201- ELECTRONICS DEVICES
SEMESTER & BRANCH
: II& ECE A &B Sec
NUMBER OF PERIODS GIVEN IN THE SYLLABUS : 45
Text & Reference Books
S.No
Title
Semiconductor Physics and
Devices
T1

Author
Donald A Neaman

R1

Fundamentals
Semiconductor devices

R2

Electron Devices and Circuit


Theory

L.No

Unit No.

of

Publisher
Third Edition, Tata Mc
GrawHill Inc.2007.
.

Yang

McGraw Hill International


Edition, 1978

Robert Boylestad
and Louis
Nashelsky

Pearson PrenticeHall, 10th


edition,July 2008

Topic to be covered

Page No.(s) of
Text or
Reference Book

1.

SEMICONDUCTOR DIODE
Introduction to materials and semiconductors

RB2 (02-06)

2.

Intrinsic and extrinsic semiconductor

RB2 (07-10)

3.

PN junction diode

RB2 (10-16)

Current equations

TB1 (269-

Diffusion and drift current densities

277)
TB1 (154-173)

forward and reverse bias characteristics of PN

TB1 (238-

junction diode
Breakdown mechanism in PN junction diode

248)
TB1( 231-

Energy band structure of PN junction diode

232)
TB1 (179-

Switching Characteristics

180)
TB1( 234-

4.
5.

6.
7.
8.
9.

236)
BIPOLAR JUNCTION
Principle of Operation of PNP, NPN transistors

RB2 (131-

11.

Junctions-Early effect-Current equations

134)
RB2 (131-

12.

Input and Output characteristics of CE

134)
RB2 (139-145)

13.

configuratuion
Input and Output characteristics of CB

RB2 (134-138)

14.

configuratuion
Input and Output characteristics of CC

RB2 (145-146)

10.

II

configuratuion, Comparison of CE,CB,CC

Characteristics
Hybrid - model

TB1 (418-

16.

h-parameter model

422)
TB1 (418-422)

17.

Ebers Moll Model

TB1 (413-

Gummel Poon-model, Multi Emitter Transistor.

416)
TB1 (416-418)

FIELD EFFECT TRANSISTORS


Intorduction to FET ant its types, operation of N

TB1 (571-

channel JFETs

575)

N channel JFETs Drain and Transfer

TB1 (571-

characteristics,-Current equations-Pinch off voltage

578)

and its significance


P channel JFETs Drain and Transfer

TB1 (571-

characteristics,-Current equations-Pinch off voltage

578)

15.

18.

19.

20.

21.

22.

III

23.

and its significance


Intorduction to MOSFET ant its types, Structure
and Operation of depletion type MOSFET
MOSFET- Characteristics- Threshold voltage
-Channel length modulation, D-MOSFET
Structure and Operation of Enhancement type

24.

MOSFET
Current equation - Equivalent circuit model and its

25.
26.

parameters
FINFET

27.

DUAL GATE MOSFET

29.
30.
31.
IV

33.

NET
NET

Structure and operation of MESFET


Schottky barrier diode

405)
RB2 (801-

Zener diode and its characteristics

806)
RB2 (38-39)

Operation of Varactor diode

RB2 (806-

Operation ofTunneldiode and its characteristics

809)
RB2 (809-

LASER diode

NET
TB1 (434436)

LDR(light dependent resistor)

36.

39.

TB1( 502-504)

402)
RB2 (402-

Gallium Arsenide device

35.

38.

RB2 (392399)

814)

34.

37.

TB1 (486-490)

SPECIAL SEMICONDUCTOR DEVICES


Metal-Semiconductor Junction- MESFET
RB2 (369-

28.

32.

RB2 (386-392)

POWER DEVICES AND DISPLAY DEVICES


Operation of UJT and its VI charcteristics

NET
RB2 (848-

Operation of SCR and its VI charcteristics

856)
RB2 (831-

Operation of Diac, Triac and its VI charcteristics

841)
RB2 (845-

848)
40.

Power BJT

TB1 (438-440)

41.

Power MOSFET- DMOS-VMOS

TB1 (443-445)

LED, LCD

TB1 (647-650)
RB2 (819-

42.

822)
Photo transistor,Opto Coupler

TB1 (856-

44.

Solar cell

858)
TB1 (822-825)

45.

CCD

TB1 (447-448)

43.

Signature of the faculty member

Signature of the HOD