Académique Documents
Professionnel Documents
Culture Documents
SMPS MOSFET
IRFPS37N50A
HEXFET Power MOSFET
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptable Power Supply
l High Speed Power Switching
Benefits
Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss Specified (See AN
1001)
VDSS
500V
RDS(on) max
ID
0.13
36A
SUPER-247
Max.
36
23
144
446
3.6
30
3.5
-55 to + 150
Units
A
W
W/C
V
V/ns
C
Notes
through
www.irf.com
are on page 8
1
12/14/99
IRFPS37N50A
Static @ TJ = 25C (unless otherwise specified)
V(BR)DSS
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS
IGSS
Min.
500
2.0
Typ.
Max. Units
Conditions
V
VGS = 0V, ID = 250A
0.13
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
20
Typ.
23
98
52
80
5579
810
36
7905
221
400
Max. Units
Conditions
S
V DS = 50V, ID = 22A
180
ID = 36A
46
nC
VDS = 400V
71
VGS = 10V, See Fig. 6 and 13
VDD = 250V
ID = 36A
ns
RG = 2.15
R D = 7.0,See Fig. 10
VGS = 0V
VDS = 25V
pF
= 1.0MHz, See Fig. 5
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Typ.
Max.
Units
1260
36
44
mJ
A
mJ
Typ.
Max.
Units
0.24
0.28
40
C/W
Thermal Resistance
Parameter
RJC
RCS
RJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Conditions
D
MOSFET symbol
36
showing the
A
G
integral reverse
144
S
p-n junction diode.
1.5
V
TJ = 25C, IS = 36A, VGS = 0V
570 860
ns
TJ = 25C, IF = 36A
8.6
13
C
di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
IRFPS37N50A
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
TOP
TOP
10
4.5V
0.1
0.1
10
10
4.5V
100
3.0
1000
100
TJ = 150 C
TJ = 25 C
10
V DS = 50V
20s PULSE WIDTH
5.0
6.0
7.0
8.0
www.irf.com
10
100
1
4.0
1
0.1
9.0
ID = 36A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
TJ , Junction Temperature ( C)
IRFPS37N50A
20
V G S = 0V,
f = 1M Hz
C is s = C g s + C g d, C d sSHORTED
C rs s = C g d
C o ss = C d s + C g d
C , C apacitance (pF )
100000
10000
C iss
1000
C oss
100
C rss
10
10
100
VDS = 400V
VDS = 250V
VDS = 100V
16
12
A
1
ID = 36A
1000
40
80
120
160
200
1000
1000
100
10
TJ = 25 C
100us
10
1ms
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
1.2
10us
100
TJ = 150 C
1.4
10ms
TC = 25 C
TJ = 150 C
Single Pulse
10
100
1000
10000
www.irf.com
IRFPS37N50A
40
RD
VDS
VGS
D.U.T.
RG
30
-VDD
10V
Pulse Width 1 s
Duty Factor 0.1 %
20
VDS
90%
0
25
50
75
100
TC , Case Temperature
125
150
( C)
10%
VGS
td(on)
tr
t d(off)
tf
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
P DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
www.irf.com
IRFPS37N50A
EAS , Single Pulse Avalanche Energy (mJ)
3000
1 5V
TOP
2500
D R IV E R
VDS
BOTTOM
ID
16A
23A
36A
2000
D .U .T
RG
+
V
- DD
IA S
20V
0 .0 1
tp
1500
1000
500
0
25
50
75
100
125
150
10 V
580
QGD
VG
Charge
50K
12V
.2F
QGS
560
540
520
.3F
D.U.T.
+
V
- DS
A
10
20
30
40
3mA
IG
ID
500
0
VGS
www.irf.com
IRFPS37N50A
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
RG
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
+
-
VDD
P.W.
Period
VGS=10V
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple 5%
ISD
www.irf.com
IRFPS37N50A
Case Outline and Dimensions Super-247
Dimensions are shown in millimeters
Notes:
TJ 150C
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 12/99
www.irf.com