r059010204 Electronic Devices and Circuits

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Code No: R059010204 Set No. 1

I B.Tech Regular Examinations, May/Jun 2006
ELECTRONIC DEVICES AND CIRCUITS
( Common to Electrical & Electronic Engineering, Electronics &
Communication Engineering, Computer Science & Engineering, Electronics
& Instrumentation Engineering, Bio-Medical Engineering, Information
Technology, Electronics & Control Engineering, Computer Science &
Systems Engineering, Electronics & Telematics, Electronics & Computer
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Engineering and Instrumentation & Control Engineering)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
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1. When an electron is placed in a magnetic field with a period of rotation

35.5
T= B
× 10−12 sec so that the trajectory of an electron is a circle.
(a) What is the radius described by an electron placed in a magnetic field, per-
pendicular to its motion , when the accelerating potential is 900v, and B −
0.01wb/m2 . (b)What is the time period of rotation? [8+8]
2. (a) What is Hall effect? Derive an expression for Hall coefficient? [8]
3
(b) Calculate the conductivity of copper having density 8.9 gm/cm and mobility
34.8cm2 /v-sec. Atomic weight of copper is 63.57 while it has 1 valance electron
per atom. Assume the value of M=1.66×10−27 kg. [8]
3. (a) Define the terms as referred to FWR circuit.
i. PIV
ii. average d.c. voltage
iii. RMS current
iv. ripple factor.
(b) A full wave rectifier (FWR) supplies a load requiring 300V at 200mA. Calcu-
late the transformer secondary voltage for
i. a capacitor inpur filter using a capacitor of 10 µF.
ii. a choke input filter using a choke of 10 H and a capacitance of 10µF.
Neglect the resistance of choke. [8+8]
4. (a) With neat diagram explain the various components in an pmp transistor. [8]
(b) Explain the input and output characteristics of a transistor in CB configura-
tion.
[8]
5. (a) Explain thermal instability. What are the factors affecting the stability factor.
[4+4]
(b) For the CE amplifier circuit shown below, find the percentage change in col-
lector current if the transistor with hf e =50 is replaced by another transistor
with hf e =150. Assume VBE =0.6V
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6. (a) Draw the circuit diagram of RC coupled amplifier and obtain its frequency
and phase response. 3+3+2]
(b) A common source FET amplifier circuit shown in figure 2 with unbypassed
RS has the following circuit parameters: Rd = 15k, Rs = 0.5k, Rg = 1M, rd
= 5k, gm = 5 m mho and VDD = 20 V. Calculate AV and RO . [4+4]
Figure 2:
7. (a) Draw the circuit diagram of current shunt feedback and derive expressions for
input and output resistances. [4+6]
(b) An amplifier with current sires feedback has the form shown in figure 3. The
transistor has hf e =100, hie =2k, RC =470Ω and RE consists of two 100 Ω re-
sistors, one is bypassed by capacitor CE . Calculate the values of voltage gain
and input resistance without feed back. [6]
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8. (a) Draw the circuit diagram of a RC phases shift oscillator using BJT. Derive
the expression for frequency of oscillators.
(b) Classify different type of oscillators based on frequency range.
(c) Why RC oscillators are not suitable for high frequency applications. [8+4+4]
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1. (a) Derive the expressions for acceleration, Velocity and displacement of a charged
particle placed in an electric field E
(b) Two parallel plates of a capacitor are separated by 4cms. An electron is at
rest initially at the bottom plate. Voltage is applied between the plates, which
increases linearly from 0v to 8v in 0.1 m.sec .If the top plate is +ve, determine
[8+8]
i. The speed of electron in 40.n.sec
ii. The distance traversed by the electron in 40.n.sec
2. (a) What do you understand by depetion region at p-n junction? What is the
effect of forward and reverse biasing of p-n junction on the depletion region?
Explain with necessary diagrams.
(b) Explain the concept of tunneling with energy band diagrams. [8]

i. PIV
iii. RMS current
iv. ripple factor.
4. (a) Describe a set up to obtain the output characteristics of a transistor in CE

configuration. Indicate the various regions of operation on the output charac-
teristics. [8]
(b) Explain the principle of MOSFET in depletion mode. With neat sketches and
o/p characteristics. [8]
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5. (a) Draw a BJT fixed bias circuit and derive the expression for the stability factor
‘S’. [3+5]
(b) An NPN transistor with β = 50 is used in a common emitter circuit with
VCC = 10V,RC = 2k. The bias is obtained by connecting a 100K resistance
from collector to base. Assume VBE = 0.7 V. Find
i. the quiescent point and
ii. the stability factor, S. [4+4]
6. (a) Draw the circuit diagram of common drain amplifier and derive expressions
for voltage gain and input resistance. [2+3+3]
(b) Draw the equivalent circuit for CE and CC configurations subject to the re-
striction that the input is open circuited. Show that the output impedances
of the two circuits are identical. [2+2+4]
7. (a) Define Desensitivity. [3]

(b) For large values of D, what is Af ? What is the significance of this result? [5]
(c) An Amplifier has a mid-frequency gain of 100 and a bandwidth of 200KHz.
i. What will be the new bandwidth and gain if 5% negative feedback is

introduced?
ii. What should be the amount of negative feedback if the bandwidth is to
be restricted to 1MHz? [8]
8. (a) Show that the gain of Wien bridge oscillator using BJT amplifier must be at
least 3 for the oscillations to occur.
(b) In a transistorized Hartley oscillator the two inductances are 2mH and 20µH
while the frequency is to be changed from 950KHZ to 2050KHZ. Calculate the
range over which the capacitor is to be vaired. [10+6]
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1. (a) An electron is moving perpendicular to magnetic field ‘B’. Derive the expres-
sion for radius ‘R’ of the trajectory and period of rotation T
(b) Derive the expression for the electro magnetic deflection sensitivity in the case
of the CRT. [8+8]
2. (a) Explain the process of break down of a pn-junction diode due to

i. Avalanche effect
ii. Zever effect [8]
0
(b) Find the concentration of holes and electrones in a p-type silicon at 300 K
assuming resistivity as 0.02 Ω − cm. Assume µp =475m2 /v-sec, ni =1.45× 1010
per cm3 . [8]
3. (a) Explain why a bridge rectifier is preferred over a centre-tap rectifier. [4]
(b) Explain the necessity of a bleeder resistor. [4]
(c) A diode has an internal resistance of 20Ω and 1000Ω load from a 110V rms
source of supply. Calculate
i. the efficiency of rectification
ii. the percentage regulation from no load to full load. [8]
4. (a) Draw the two transistor version of an SCR and explain its firing characteristics
with this circuit. [8]
(b) Explain the working principle of UJT with its characteristics. [8]
5. (a) Draw two biasing circuits for an enhancement type MOSFET and explain.
(b) The data sheet for an enhanced MOSFET gives ID =4.5mA at VGS =12V and
VGS(th) =6V. Determine the value of ID for VGS =10V. [8+8]
6. (a) Draw the circuit diagram of common drain amplifier and derive expressions
for voltage gain and output resistance. [2+3+3]

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(b) Draw the equivalent circuit for CE and CC configurations subject to the re-
striction that RL =0. Show that the input impedances for the two circuits are
identical.
[2+2+4]
7. (a) Draw the circuit diagram of voltage shunt feedback and derive expressions for
input and output resistances. [4+6]
(b) An Amplifier has an open loop gain of 800 and a feedback ratio of 0.05. If
the open loop gain changes by 20% due to temperature, find the percentage
change in closed loop gain. [6]
8. (a) Derive an expression for frequency of oscillation of transistorized Colpitts os-

cillator.
(b) A quartz crystal has the following constants. L=50mH, C1 =0.02PF, R=500Ω
and C2 =12PF. Find the values of series and parallel resonant frequencies. If
the external capacitance across the crystal changes from 5PF to 6PF, find the
change in frequency of oscillations. [8+8]
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1. (a) When an electron is placed in a magnetic field with a period of rotation

T = 35.5
B
× 10−12 sec so that the trajectory of an electron is a circle.
(b) What is the radius described by an electron placed in a magnetic field, per-
pendicular to its motion , when the accelerating potential is 900v, and B −
0.01wb/m2 . What is the time period of rotation? [8+8]
2. (a) Explain the process of break down of a pn-junction diode due to

i. Avalanche effect
ii. Zever effect [8]
(b) Find the concentration of holes and electrones in a p-type silicon at 3000 K
assuming resistivity as 0.02 Ω − cm. Assume µp =475m2 /v-sec, ni =1.45× 1010
per cm3 . [8]
i. PIV
iii. RMS current
iv. ripple factor.
4. (a) Describe a set up to obtain the output characteristics of a transistor in CE

configuration. Indicate the various regions of operation on the output charac-
teristics. [8]
(b) Explain the principle of MOSFET in depletion mode. With neat sketches and
o/p characteristics. [8]

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5. (a) Draw a BJT self bias circuit and obtain the expression for the stability factor
‘S’. [3+5]
(b) A Germanium transistor is used in a self biasing circuit configuration as shown
below with Vcc = 16V, Rc = 1.5k and β = 50. The operating point desired
is VCE = 8V and IC = 4mA. If a stability factor S = 10 is desired, calculate
values of R1 , R2 and RE of the circuit. ( figure 1) [3+2+3]
h-parameters.
Figure 1:
6. (a) Draw a low frequency equivalent circuit for a CC amplifier and derive the the
relations for the current gain, voltage gain and input resistance in terms of
[2+6]
(b) In the common collector circuit (figure2), the transistor parameters are hic =1.2K
and hf c = -101. Calculate input and output resistances, voltage gain and cur-
rent gain. [8]
7. (a) What do you understand by feedback in amplifiers? Explain the terms feed-
back factor and open loop gain. [4+2+2]
(b) Calculate the gain, input impedance, output impedance of voltage series feed-
back amplifier having A=300, Ri =1.5K,RO =50K and β=1/12. [8]
8. (a) Show that the gain of Wien bridge oscillator using BJT amplifier must be at
least 3 for the oscillations to occur.
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(b) In a transistorized Hartley oscillator the two inductances are 2mH and 20µH
while the frequency is to be changed from 950KHZ to 2050KHZ. Calculate the
range over which the capacitor is to be vaired. [10+6]
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r059010204 Electronic Devices and Circuits

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www.andhracolleges.

com The Complete Information About Colleges in Andhra Pradesh

Code No: R059010204 Set No. 1

1. When an electron is placed in a magnetic field with a period of rotation

Code No: R059010204 Set No. 1

www.andhracolleges.com Engineering-MBA-MCA-Medical-Pharmacy-B.Ed-Law Colleges Information

Code No: R059010204 Set No. 1

www.andhracolleges.com Engineering-MBA-MCA-Medical-Pharmacy-B.Ed-Law Colleges Information

Code No: R059010204 Set No. 2

3. (a) Define the terms as referred to FWR circuit.

4. (a) Describe a set up to obtain the output characteristics of a transistor in CE

www.andhracolleges.com Engineering-MBA-MCA-Medical-Pharmacy-B.Ed-Law Colleges Information

Code No: R059010204 Set No. 2

7. (a) Define Desensitivity. [3]

i. What will be the new bandwidth and gain if 5% negative feedback is

Seminar Topics - Scholarships - Admission/Entrance Exam Notifications

Code No: R059010204 Set No. 3

2. (a) Explain the process of break down of a pn-junction diode due to

Seminar Topics - Scholarships - Admission/Entrance Exam Notifications

www.andhracolleges.com Engineering-MBA-MCA-Medical-Pharmacy-B.Ed-Law Colleges Information

Code No: R059010204 Set No. 3

8. (a) Derive an expression for frequency of oscillation of transistorized Colpitts os-

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Code No: R059010204 Set No. 4

1. (a) When an electron is placed in a magnetic field with a period of rotation

2. (a) Explain the process of break down of a pn-junction diode due to

4. (a) Describe a set up to obtain the output characteristics of a transistor in CE

Seminar Topics - Scholarships - Admission/Entrance Exam Notifications

www.andhracolleges.com Engineering-MBA-MCA-Medical-Pharmacy-B.Ed-Law Colleges Information

Code No: R059010204 Set No. 4

www.andhracolleges.com Engineering-MBA-MCA-Medical-Pharmacy-B.Ed-Law Colleges Information

Code No: R059010204 Set No. 4

www.andhracolleges.com Engineering-MBA-MCA-Medical-Pharmacy-B.Ed-Law Colleges Information

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