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SiliconCarbide,SiCCeramicProperties
Accuflect
AluminumNitride
AluminumOxide
BoronNitride
FusedSilica
Macor
Mullite
SiliconCarbideistheonlychemicalcompoundofcarbonandsilicon.Itwasoriginally
producedbyahightemperatureelectrochemicalreactionofsandandcarbon.Silicon
carbideisanexcellentabrasiveandhasbeenproducedandmadeintogrindingwheelsand
otherabrasiveproductsforoveronehundredyears.Todaythematerialhasbeendeveloped
intoahighqualitytechnicalgradeceramicwithverygoodmechanicalproperties.Itisused
inabrasives,refractories,ceramics,andnumeroushighperformanceapplications.The
materialcanalsobemadeanelectricalconductorandhasapplicationsinresistanceheating,
flameignitersandelectroniccomponents.Structuralandwearapplicationsareconstantly
developing.
.KeySiliconCarbideProperties
Lowdensity
Highstrength
Lowthermalexpansion
Sialon
SiliconCarbide
SiliconNitride
Highthermalconductivity
Highhardness
Highelasticmodulus
ZirconiumOxide
Excellentthermalshockresistance
Superiorchemicalinertness
.
SiliconCarbideTypicalUses
Fixedandmovingturbinecomponents
Suctionboxcovers
Seals,bearings
Ballvalveparts
Hotgasflowliners
Heatexchangers
Semiconductorprocessequipment
GeneralSiliconCarbideInformation
Siliconcarbideiscomposedoftetrahedraofcarbonandsiliconatomswithstrongbondsin
thecrystallattice.Thisproducesaveryhardandstrongmaterial.Siliconcarbideisnot
attackedbyanyacidsoralkalisormoltensaltsupto800C.Inair,SiCformsaprotective
siliconoxidecoatingat1200Candisabletobeusedupto1600C.Thehighthermal
conductivitycoupledwithlowthermalexpansionandhighstrengthgivethismaterial
exceptionalthermalshockresistantqualities.Siliconcarbideceramicswithlittleornograin
boundaryimpuritiesmaintaintheirstrengthtoveryhightemperatures,approaching1600C
withnostrengthloss.Chemicalpurity,resistancetochemicalattackattemperature,and
strengthretentionathightemperatureshasmadethismaterialverypopularaswafertray
supportsandpaddlesinsemiconductorfurnaces.Theelectricalconductionofthematerial
hasleadtoitsuseinresistanceheatingelementsforelectricfurnaces,andasakey
componentinthermistors(temperaturevariableresistors)andinvaristors(voltagevariable
resistors).
DownloadSiliconCarbidedatasheet
SiliconCarbideEngineeringProperties*
SiliconCarbideProperties
Mechanical
SI/Metric(Imperial)
SI/Metric
(Imperial)
Density
gm/cc(lb/ft3)
3.1
(193.5)
Porosity
%(%)
(0)
black
FlexuralStrength
MPa(lb/in2x103)
550
(80)
ElasticModulus
GPa(lb/in2x106)
410
(59.5)
ShearModulus
GPa(lb/in2x106)
Color
GPa(lb/in2x106)
GPa(lb/in2x106)
0.14
(0.14)
MPa(lb/in2x103)
3900
(566)
Kg/mm2
2800
MPam1/2
4.6
C(F)
1650
(3000)
W/mK(BTUin/ft2hrF)
120
(830)
106/C(106/F)
4.0
(2.2)
J/KgK(Btu/lbF)
750
(0.18)
DielectricStrength
ackv/mm(volts/mil)
semiconductor
DielectricConstant
DissipationFactor
LossTangent
ohmcm
102106
dopantdependent
BulkModulus
PoissonsRatio
CompressiveStrength
Hardness
FractureToughnessKIC
MaximumUseTemperature
(noload)
Thermal
ThermalConductivity
CoefficientofThermalExpansion
SpecificHeat
Electrical
VolumeResistivity
*Allpropertiesareroomtemperaturevaluesexceptasnoted.
Thedatapresentedistypicalofcommerciallyavailablematerialandisofferedforcomparativepurposesonly.Theinformationis
nottobeinterpretedasabsolutematerialpropertiesnordoesitconstitutearepresentationorwarrantyforwhichweassume
legalliability.Usershalldeterminesuitabilityofthematerialfortheintendeduseandassumesallriskandliabilitywhatsoeverin
connectiontherewith.
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