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Materials

SiliconCarbide,SiCCeramicProperties

Accuflect
AluminumNitride
AluminumOxide
BoronNitride
FusedSilica
Macor
Mullite

SiliconCarbideistheonlychemicalcompoundofcarbonandsilicon.Itwasoriginally
producedbyahightemperatureelectrochemicalreactionofsandandcarbon.Silicon
carbideisanexcellentabrasiveandhasbeenproducedandmadeintogrindingwheelsand
otherabrasiveproductsforoveronehundredyears.Todaythematerialhasbeendeveloped
intoahighqualitytechnicalgradeceramicwithverygoodmechanicalproperties.Itisused
inabrasives,refractories,ceramics,andnumeroushighperformanceapplications.The
materialcanalsobemadeanelectricalconductorandhasapplicationsinresistanceheating,
flameignitersandelectroniccomponents.Structuralandwearapplicationsareconstantly
developing.
.KeySiliconCarbideProperties
Lowdensity
Highstrength
Lowthermalexpansion

Sialon
SiliconCarbide
SiliconNitride

Highthermalconductivity
Highhardness
Highelasticmodulus

ZirconiumOxide

Excellentthermalshockresistance
Superiorchemicalinertness
.

SiliconCarbideTypicalUses
Fixedandmovingturbinecomponents
Suctionboxcovers
Seals,bearings
Ballvalveparts
Hotgasflowliners
Heatexchangers
Semiconductorprocessequipment

GeneralSiliconCarbideInformation
Siliconcarbideiscomposedoftetrahedraofcarbonandsiliconatomswithstrongbondsin
thecrystallattice.Thisproducesaveryhardandstrongmaterial.Siliconcarbideisnot
attackedbyanyacidsoralkalisormoltensaltsupto800C.Inair,SiCformsaprotective
siliconoxidecoatingat1200Candisabletobeusedupto1600C.Thehighthermal
conductivitycoupledwithlowthermalexpansionandhighstrengthgivethismaterial
exceptionalthermalshockresistantqualities.Siliconcarbideceramicswithlittleornograin
boundaryimpuritiesmaintaintheirstrengthtoveryhightemperatures,approaching1600C
withnostrengthloss.Chemicalpurity,resistancetochemicalattackattemperature,and
strengthretentionathightemperatureshasmadethismaterialverypopularaswafertray
supportsandpaddlesinsemiconductorfurnaces.Theelectricalconductionofthematerial
hasleadtoitsuseinresistanceheatingelementsforelectricfurnaces,andasakey
componentinthermistors(temperaturevariableresistors)andinvaristors(voltagevariable
resistors).
DownloadSiliconCarbidedatasheet

SiliconCarbideEngineeringProperties*
SiliconCarbideProperties
Mechanical

SI/Metric(Imperial)

SI/Metric

(Imperial)

Density

gm/cc(lb/ft3)

3.1

(193.5)

Porosity

%(%)

(0)

black

FlexuralStrength

MPa(lb/in2x103)

550

(80)

ElasticModulus

GPa(lb/in2x106)

410

(59.5)

ShearModulus

GPa(lb/in2x106)

Color

GPa(lb/in2x106)

GPa(lb/in2x106)

0.14

(0.14)

MPa(lb/in2x103)

3900

(566)

Kg/mm2

2800

MPam1/2

4.6

C(F)

1650

(3000)

W/mK(BTUin/ft2hrF)

120

(830)

106/C(106/F)

4.0

(2.2)

J/KgK(Btu/lbF)

750

(0.18)

DielectricStrength

ackv/mm(volts/mil)

semiconductor

DielectricConstant

DissipationFactor

LossTangent

ohmcm

102106

dopantdependent

BulkModulus
PoissonsRatio
CompressiveStrength
Hardness
FractureToughnessKIC
MaximumUseTemperature
(noload)
Thermal
ThermalConductivity
CoefficientofThermalExpansion
SpecificHeat
Electrical

VolumeResistivity

*Allpropertiesareroomtemperaturevaluesexceptasnoted.
Thedatapresentedistypicalofcommerciallyavailablematerialandisofferedforcomparativepurposesonly.Theinformationis
nottobeinterpretedasabsolutematerialpropertiesnordoesitconstitutearepresentationorwarrantyforwhichweassume
legalliability.Usershalldeterminesuitabilityofthematerialfortheintendeduseandassumesallriskandliabilitywhatsoeverin
connectiontherewith.
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