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SPP21N10,SPB21N10
SIPMOS =Power-Transistor
Feature
Product Summary
N-Channel
VDS
Enhancement mode
=175C operating temperature
Avalanche rated
P-TO262-3-1
100
RDS(on)
85
ID
21
P-TO263-3-2
P-TO220-3-1
dv/dt rated
Type
Package
Ordering Code
Marking
SPP21N10
P-TO220-3-1 -
21N10
SPB21N10
P-TO263-3-2 -
21N10
SPI21N10
P-TO262-3-1 -
21N10
Symbol
ID
Value
Unit
A
TC=25C
21
TC=100C
ID puls
84
EAS
130
dv/dt
VGS
20
Power dissipation
Ptot
104
-55... +175
mJ
kV/s
TC=25C
Tj , Tstg
55/175/56
Page 1
2001-03-16
SPI21N10
SPP21N10,SPB21N10
Parameter
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
1.5
RthJA
100
RthJA
-
75
50
@ min. footprint
@ 6 cm 2 cooling area
1)
K/W
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
100
VGS(th)
2.1
Static Characteristics
Drain-source breakdown voltage
IDSS
0.01
100
IGSS
100
nA
RDS(on)
tbd
85
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2001-03-16
SPI21N10
SPP21N10,SPB21N10
Symbol
Conditions
Values
Unit
min.
typ.
max.
tbd
tbd
S
pF
Dynamic Characteristics
Transconductance
gfs
Input capacitance
Ciss
tbd
tbd
Output capacitance
Coss
f=1MHz
tbd
tbd
Crss
tbd
tbd
td(on)
tbd
tbd
Rise time
tr
ID =21A, RG =13
tbd
tbd
td(off)
tbd
tbd
Fall time
tf
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
tbd
IS
21
84
ns
Qgs
Qgd
Qg
nC
VGS =0 to 10V
TC=25C
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
tbd
tbd
trr
VR =50V, IF =lS ,
tbd
tbd
ns
Qrr
diF /dt=100A/s
tbd
tbd
nC
Page 3
2001-03-16
SPI21N10
SPP21N10,SPB21N10
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 4
2001-03-16