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by 2N3903/D

SEMICONDUCTOR TECHNICAL DATA

General Purpose Transistors

2N3903
2N3904*

NPN Silicon

*Motorola Preferred Device

COLLECTOR
3
2
BASE
1
EMITTER

1
2

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

Collector Emitter Voltage

VCEO

40

Vdc

Collector Base Voltage

VCBO

60

Vdc

Emitter Base Voltage

VEBO

6.0

Vdc

Collector Current Continuous

IC

200

mAdc

Total Device Dissipation @ TA = 25C

Derate above 25C

PD

625
5.0

mW
mW/C

Total Device Dissipation @ TC = 25C

Derate above 25C

PD

1.5
12

Watts
mW/C

TJ, Tstg

55 to +150

Symbol

Max

Unit

Operating and Storage Junction

Temperature Range

CASE 2904, STYLE 1

TO92 (TO226AA)

THERMAL CHARACTERISTICS(1)
Characteristic
Thermal Resistance, Junction to Ambient

RqJA

200

C/W

Thermal Resistance, Junction to Case

RqJC

83.3

C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Symbol

Min

Max

Unit

Collector Emitter Breakdown Voltage (2)

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

40

Vdc

Collector Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

60

Vdc

Emitter Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.0

Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

IBL

50

nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc)

ICEX

50

nAdc

Characteristic

OFF CHARACTERISTICS

1. Indicates Data in addition to JEDEC Requirements.

2. Pulse Test: Pulse Width
300 ms; Duty Cycle
2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola SmallSignal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

2N3903 2N3904
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic

Symbol

Min

Max

2N3903
2N3904

20
40

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

2N3903
2N3904

35
70

(IC = 10 mAdc, VCE = 1.0 Vdc)

2N3903
2N3904

50
100

150
300

(IC = 50 mAdc, VCE = 1.0 Vdc)

2N3903
2N3904

30
60

(IC = 100 mAdc, VCE = 1.0 Vdc)

2N3903
2N3904

15
30

0.2
0.3

0.65

0.85
0.95

250
300

Unit

ON CHARACTERISTICS
DC Current Gain(1)
(IC = 0.1 mAdc, VCE = 1.0 Vdc)

hFE

Collector Emitter Saturation Voltage(1)

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc

VCE(sat)

Base Emitter Saturation Voltage(1)

(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat)

Vdc

Vdc

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT
2N3903
2N3904

MHz

Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

4.0

pF

Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

8.0

pF

1.0
1.0

8.0
10

0.1
0.5

5.0
8.0

50
100

200
400

1.0

40

6.0
5.0

td

35

ns

tr

35

ns

ts

175
200

ns

tf

50

ns

Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

X 10 4

hre
2N3903
2N3904
hfe
2N3903
2N3904

Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k , f = 1.0 kHz)

hie
2N3903
2N3904

hoe

NF
2N3903
2N3904

mmhos
dB

SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time

((VCC = 3.0 Vdc, VBE = 0.5 Vdc,

IC = 10 mAdc, IB1 = 1.0 mAdc)
(VCC = 3.0 Vdc, IC = 10 mAdc,
IB1 = IB2 = 1.0 mAdc)

Fall Time
1. Pulse Test: Pulse Width

v 300 ms; Duty Cycle v 2.0%.

2N3903
2N3904

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3903 2N3904
DUTY CYCLE = 2%
300 ns

+3 V
+10.9 V

10 < t1 < 500 ms

275

t1

DUTY CYCLE = 2%

+3 V
+10.9 V
275

10 k

10 k
0

0.5 V

CS < 4 pF*

< 1 ns

CS < 4 pF*

1N916
9.1 V

< 1 ns

* Total shunt capacitance of test jig and connectors

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

TYPICAL TRANSIENT CHARACTERISTICS

TJ = 25C
TJ = 125C
10

5000
2000

5.0

Q, CHARGE (pC)

CAPACITANCE (pF)

VCC = 40 V
IC/IB = 10

3000

7.0

Cibo
3.0
Cobo

2.0

1000
700
500
QT

300
200

QA

1.0
0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30 40

100
70
50

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

REVERSE BIAS VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (mA)

Figure 3. Capacitance

Figure 4. Charge Data

Motorola SmallSignal Transistors, FETs and Diodes Device Data

200

2N3903 2N3904
500

500
IC/IB = 10

100
70

tr @ VCC = 3.0 V

50
30
20

VCC = 40 V
IC/IB = 10

300
200
t r, RISE TIME (ns)

TIME (ns)

300
200

40 V

100
70
50
30
20

15 V
10
7
5

10
2.0 V

td @ VOB = 0 V
1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

IC, COLLECTOR CURRENT (mA)

Figure 5. Turn On Time

Figure 6. Rise Time

IC/IB = 10

200

500

ts = ts 1/8 tf
IB1 = IB2

VCC = 40 V
IB1 = IB2

300
200
IC/IB = 20
t f , FALL TIME (ns)

t s , STORAGE TIME (ns)

IC/IB = 20

200

IC, COLLECTOR CURRENT (mA)

500
300
200

7
5

100
70
IC/IB = 20

50

IC/IB = 10

30
20

100
70
50

10

10

7
5

7
5

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

200

IC/IB = 10

30
20

1.0

2.0 3.0

5.0 7.0 10

20

30

50 70 100

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Figure 8. Fall Time

200

TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz)
12

f = 1.0 kHz

SOURCE RESISTANCE = 200 W

IC = 0.5 mA

8
6

SOURCE RESISTANCE = 1.0 k

IC = 50 mA

4
2
0
0.1

SOURCE RESISTANCE = 500 W

IC = 100 mA
0.2

0.4

1.0

2.0

IC = 1.0 mA

12
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

10

14

SOURCE RESISTANCE = 200 W

IC = 1.0 mA

IC = 0.5 mA

10

IC = 50 mA

8
IC = 100 mA

6
4
2

4.0

10

20

40

100

0.1

0.2

0.4

1.0

2.0

4.0

10

20

f, FREQUENCY (kHz)

RS, SOURCE RESISTANCE (k OHMS)

Figure 9.

Figure 10.

40

100

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3903 2N3904
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25C)
100
hoe, OUTPUT ADMITTANCE (m mhos)

h fe , CURRENT GAIN

300

200

100
70
50

30

0.1

0.2

0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)

5.0

50

20
10
5

2
1

10

0.1

0.2

Figure 11. Current Gain

h re , VOLTAGE FEEDBACK RATIO (X 10 4 )

h ie , INPUT IMPEDANCE (k OHMS)

10
5.0

2.0
1.0
0.5

0.1

0.2

0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)

5.0

10

5.0

10

Figure 12. Output Admittance

20

0.2

0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)

5.0

10
7.0
5.0
3.0
2.0

1.0
0.7
0.5

10

0.1

Figure 13. Input Impedance

0.2

0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)

Figure 14. Voltage Feedback Ratio

h FE, DC CURRENT GAIN (NORMALIZED)

TYPICAL STATIC CHARACTERISTICS

2.0
TJ = +125C

VCE = 1.0 V

+25C

1.0
0.7

55C

0.5
0.3
0.2

0.1
0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

IC, COLLECTOR CURRENT (mA)

Figure 15. DC Current Gain

Motorola SmallSignal Transistors, FETs and Diodes Device Data

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

2N3903 2N3904
1.0
TJ = 25C
0.8

IC = 1.0 mA

10 mA

30 mA

100 mA

0.6

0.4

0.2

0
0.01

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

IB, BASE CURRENT (mA)

Figure 16. Collector Saturation Region

1.0

1.2
TJ = 25C
VBE(sat) @ IC/IB =10

0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10

qVC FOR VCE(sat)

0

55C TO +25C

0.5
55C TO +25C
1.0
+25C TO +125C

qVB FOR VBE(sat)

1.5

0.2
0

+25C TO +125C

0.5
COEFFICIENT (mV/ C)

V, VOLTAGE (VOLTS)

1.0

1.0

2.0

5.0

10

20

50

100

200

2.0

20

40

60

80

100

120

140

160

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 17. ON Voltages

Figure 18. Temperature Coefficients

180 200

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N3903 2N3904
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.

R
P
L

SEATING
PLANE

K
D
J

X X
G
H
V

SECTION XX

N
N

CASE 02904
(TO226AA)
ISSUE AD

Motorola SmallSignal Transistors, FETs and Diodes Device Data

DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V

INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500

0.250

0.080
0.105

0.100
0.115

0.135

MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70

6.35

2.04
2.66

2.54
2.93

3.43

STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR

2N3903 2N3904

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2N3903/D
Motorola SmallSignal Transistors, FETs and Diodes Device
Data