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RFG50N06, RFP50N06, RF1S50N06SM

Data Sheet

July 1999

50A, 60V, 0.022 Ohm, N-Channel Power


MOSFETs

File Number

3575.4

Features
50A, 60V

These N-Channel power MOSFETs are manufactured using


the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.

rDS(ON) = 0.022
Temperature Compensating PSPICE Model
Peak Current vs Pulse Width Curve
UIS Rating Curve
175oC Operating Temperature

Symbol

Formerly developmental type TA49018.

Ordering Information
PART NUMBER

PACKAGE

BRAND

RFG50N06

TO-247

RFG50N06

RFP50N06

TO-220AB

RFP50N06

RF1S50N06SM

TO-263AB

F1S50N06

NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.

Packaging
JEDEC STYLE TO-247

JEDEC TO-220AB
SOURCE
DRAIN
GATE

DRAIN
(BOTTOM
SIDE METAL)

DRAIN
(FLANGE)

SOURCE
DRAIN
GATE

JEDEC TO-263AB

DRAIN
(FLANGE)
GATE
SOURCE

4-467

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207 | Copyright Intersil Corporation 1999

RFG50N06, RFP50N06, RF1S50N06SM


Absolute Maximum Ratings

TC = 25oC, Unless Otherwise Specified

Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS


Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg

RFG50N06, RFP50N06
RF1S50N06SM
60
60
20
50
(Figure 5)
(Figure 6, 14, 15)
131
0.877
-55 to 175

UNITS
V
V
V
A

W
W/oC
oC
oC
oC

300
260

CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:
1. TJ = 25oC to 150oC.

Electrical Specifications

TC = 25oC, Unless Otherwise Specified


MIN

TYP

MAX

UNITS

Drain to Source Breakdown Voltage

PARAMETER

SYMBOL
BVDSS

ID = 250A, VGS = 0V (Figure 11)

TEST CONDITIONS

60

Gate to Source Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250A (Figure 10)

TC = 25oC
TC = 150oC

Zero Gate Voltage Drain Current

IDSS

VDS = 60V,
VGS = 0V

50

Gate to Source Leakage Current

IGSS

VGS = 20V

100

nA

ID = 50A, VGS = 10V (Figures 9)

0.022

VDD = 30V, ID = 50A


RL = 0.6, VGS = 10V
RGS = 3.6
(Figure 13)

95

ns

12

ns

55

ns

td(OFF)

37

ns

tf

13

ns

Drain to Source On Resistance

rDS(ON)

Turn-On Time

tON

Turn-On Delay Time

td(ON)

Rise Time

tr

Turn-Off Delay Time


Fall Time
Turn-Off Time

tOFF

Total Gate Charge

Qg(TOT)

VGS = 0 to 20V

Gate Charge at 10V

Qg(10)

VGS = 0 to 10V

Threshold Gate Charge

Qg(TH)

VGS = 0 to 2V

Input Capacitance

CISS

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

VDD = 48V, ID = 50A,


RL = 0.96
Ig(REF) = 1.45mA
(Figure 13)

VDS = 25V, VGS = 0V


f = 1MHz
(Figure 12)

75

ns

125

150

nC

67

80

nC

3.7

4.5

nC

2020

pF

600

pF

200

pF

Thermal Resistance Junction to Case

RJC

(Figure 3)

1.14

oC/W

Thermal Resistance Junction to Ambient

RJA

TO-247

30

oC/W

TO-220, TO-263

62

oC/W

Source to Drain Diode Specifications


PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time

SYMBOL
VSD
trr

4-468

TEST CONDITIONS

MIN

TYP

MAX

UNITS

ISD = 50A

1.5

ISD = 50A, dISD/dt = 100A/s

125

ns

RFG50N06, RFP50N06, RF1S50N06SM


Unless Otherwise Specified

1.2

60

1.0

50
ID , DRAIN CURRENT (A)

POWER DISSIPATION MULTIPLIER

Typical Performance Curves

0.8
0.6
0.4
0.2

40
30
20
10
0

0
0

25

50
75
100
125
TC , CASE TEMPERATURE (oC)

150

25

175

50

75

100

125

150

175

TC , CASE TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE


TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs


CASE TEMPERATURE

THERMAL IMPEDANCE

ZJC, NORMALIZED

1
0.5
0.2
0.1

0.1

PDM

0.05
t1

0.02
0.01

t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJC x RJC + TC

SINGLE PULSE
0.01 -5
10

10-4

10-3

10-2
10-1
t1 , RECTANGULAR PULSE DURATION (s)

101

100

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

100
100s
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)

103

TJ = MAX RATED
SINGLE PULSE
TC = 25oC

10ms

VDSS(MAX) = 60V
1

FOR TEMPERATURES ABOVE 25oC


DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

100

175 T C
I = I 25 ------------------------
150

VGS = 20V

VGS = 10V
TC = 25oC

102
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

100ms
DC

10

4-469

IDM , PEAK CURRENT (A)

ID , DRAIN CURRENT (A)

400

40

10-3

10-2

10-1

100
101
102
t, PULSE WIDTH (ms)

103

FIGURE 5. PEAK CURRENT CAPABILITY

104

RFG50N06, RFP50N06, RF1S50N06SM


Typical Performance Curves

Unless Otherwise Specified (Continued)

300

125

100

ID , DRAIN CURRENT (A)

IAS, AVALANCHE CURRENT (A)

VGS = 10V
STARTING TJ = 25oC

STARTING TJ = 150oC

10

If R = 0
tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)

VGS = 7V
75

50

0.1

VGS = 6V
VGS = 5V

25

If R 0
tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]

1
0.01

VGS = 8V

100

PULSE DURATION = 80s


DUTY CYCLE = 0.5% MAX
TC = 25oC

VGS = 4V
0
0

10

1.5

tAV, TIME IN AVALANCHE (ms)

3.0

4.5

6.0

7.5

VDS , DRAIN TO SOURCE VOLTAGE (V)

NOTE: Refer to Intersil Application Notes 9321 and 9322.


FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY

PULSE DURATION = 80s


DUTY CYCLE = 0.5% MAX
VDD = 15V

100

-55oC

2.5

25oC

NORMALIZED DRAIN TO SOURCE


ON RESISTANCE

ID, DRAIN CURRENT (A)

125

FIGURE 7. SATURATION CHARACTERISTICS

175oC
75

50

25

0
0

2.0

PULSE DURATION = 80s


DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 50A

1.5

1.0

0.5

0
-80

10

-40

FIGURE 8. TRANSFER CHARACTERISTICS

80

120

160

200

2.0
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE

VGS = VDS, ID = 250A


NORMALIZED GATE
THRESHOLD VOLTAGE

40

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON


RESISTANCE vs JUNCTION TEMPERATURE

2.0

1.5

1.0

0.5

0
-80

TJ , JUNCTION TEMPERATURE (oC)

VGS , GATE TO SOURCE VOLTAGE (V)

-40

40

80

120

160

200

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs


JUNCTION TEMPERATURE

4-470

ID = 250A
1.5

1.0

0.5

0
-80

-40

40

80

120

160

200

TJ , JUNCTION TEMPERATURE (oC)

FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN


VOLTAGE vs JUNCTION TEMPERATURE

RFG50N06, RFP50N06, RF1S50N06SM


Unless Otherwise Specified (Continued)

VGS = 0V, f = 1MHz


CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD

3000

VDS , DRAIN TO SOURCE VOLTAGE (V)

C, CAPACITANCE (pF)

10

60

4000

CISS
2000

COSS

1000

CRSS
0
0

10

15

20

VDD = BVDSS

VDD = BVDSS
7.5

45

5.0

30
0.75 BVDSS

0.75 BVDSS

0.50 BVDSS

0.50 BVDSS

0.25 BVDSS
0.25 BVDSS
RL = 1.2
Ig(REF) = 1.45mA
VGS = 10V

15

2.5

VGS , GATE TO SOURCE VOLTAGE (V)

Typical Performance Curves

25

20

VDS , DRAIN TO SOURCE VOLTAGE (V)

Ig(REF)

t, TIME (s)

Ig(ACT)

80

Ig(REF)
Ig(ACT)

NOTE: Refer to Intersil Application Notes AN7254 and AN7260.


FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 13. NORMALIZED SWITCHING WAVEFORMS FOR


CONSTANT GATE CURRENT

Test Circuits and Waveforms


VDS
BVDSS
L

tP

VARY tP TO OBTAIN
REQUIRED PEAK IAS

RG

VDS

IAS

VDD

VDD
-

VGS
DUT
tP

0V

IAS

0
0.01
tAV

FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT

FIGURE 15. UNCLAMPED ENERGY WAVEFORMS

tON

tOFF

td(ON)

VDS

td(OFF)
tf

tr
VDS

90%

90%

RL

VGS

DUT
RGS
VGS

VDD

90%
VGS
0

FIGURE 16. SWITCHING TIME TEST CIRCUIT

4-471

10%

10%

10%

50%

50%
PULSE WIDTH

FIGURE 17. SWITCHING WAVEFORMS

RFG50N06, RFP50N06, RF1S50N06SM


Test Circuits and Waveforms

(Continued)

VDS
VDD

RL

Qg(TOT)
VDS
VGS = 20V

VGS

Qg(10)

VDD
DUT
Ig(REF)

VGS = 10V

VGS

VGS = 2V
0
Qg(TH)
Ig(REF)
0

FIGURE 18. GATE CHARGE TEST CIRCUIT

4-472

FIGURE 19. GATE CHARGE WAVEFORMS

RFG50N06, RFP50N06, RF1S50N06SM


PSPICE Electrical Model
.SUBCKT RFP50N06 2 1 3
REV 2/22/93

*NOM TEMP = 25oC

CA 12 8 3.68e-9
CB 15 14 3.625e-9
CIN 6 8 1.98e-9
DRAIN
2
LDRAIN

DBODY 7 5 DBDMOD
DBREAK 5 11DBKMOD
DPLCAP 10 5 DPLCAPMOD

10
DBREAK

EVTO
9

1
LGATE

20

GATE
RGATE

18
8

RDRAIN

6
8
VTO

16

ESG
+

EBREAK 11 7 17 18 64.59
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1

DPLCAP

MOS1

RIN

8
12

LDRAIN 2 5 1e-9
LGATE 1 9 5.65e-9
LSOURCE 3 7 4.13e-9

13
8
S1B

MOS1 16 6 8 8 MOSMOD M=0.99


MOS2 16 21 8 8 MOSMOD M=0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 1e-4
RGATE 9 20 0.690
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 12e-3
RVTO 18 19 RVTOMOD 1

+
EGS 6
- 8

17
EBREAK
18
RSOURCE

LSOURCE

S2A
14
13

15

17

RBREAK

S2B
13

CA

11

CIN

IT 8 17 1
S1A

DBODY

MOS2
21

3
SOURCE
18
RVTO

CB
14
+
5
EDS 8

IT

19

VBAT
+

S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.678
.MODEL DBDMOD D (IS=9.85e-13 RS=4.91e-3 TRS1=2.07e-3 TRS2=2.51e-7 CJO=2.05e-9 TT=4.33e-8)
.MODEL DBKMOD D (RS=1.98e-1 TRS1=2.35E-4 TRS2=-3.83e-6)
.MODEL DPLCAPMOD D (CJO=1.42e-9 IS=1e-30 N=10)
.MODEL MOSMOD NMOS (VTO=3.65 KP=35 IS=1e-30 N=10 TOX=1 L=1u W=1u)
.MODEL RBKMOD RES (TC1=1.23e-3 TC2=-2.34e-7)
.MODEL RDSMOD RES (TC1=5.01e-3 TC2=1.49e-5)
.MODEL RVTOMOD RES (TC1=-5.03e-3 TC2=-5.16e-6)
.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-6.75 VOFF=-2.5)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.5 VOFF=-6.75)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.7 VOFF=2.3)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=2.3 VOFF=-2.7)
.ENDS
NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature
Options; authors, William J. Hepp and C. Frank Wheatley.

4-473

RFG50N06, RFP50N06, RF1S50N06SM

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Office Headquarters


NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (407) 724-7000
FAX: (407) 724-7240

4-474

EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05

ASIA
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7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029

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