2SA1244

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

2SA1244
High Current Switching Applications

Unit: mm

Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)

High speed switching time: tstg = 1.0 s (typ.)

Complementary to 2SC3074

Maximum Ratings (Ta = 25C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

VCBO

60

Collector-emitter voltage

VCEO

50

Emitter-base voltage

VEBO

Collector current

IC

Base current

IB

Collector power
dissipation

Ta = 25C
Tc = 25C

Junction temperature
Storage temperature range

PC

1.0
20

Tj

150

JEDEC

Tstg

55 to 150

JEITA

TOSHIBA

2-7B1A

Weight: 0.36 g (typ.)

JEDEC

JEITA

TOSHIBA

2-7J1A

Weight: 0.36 g (typ.)

2002-07-23

2SA1244
Electrical Characteristics (Ta = 25C)
Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Collector cut-off current

ICBO

VCB = 50 V, IE = 0

Emitter cut-off current

IEBO

VEB = 5 V, IC = 0

V (BR) CEO

IC = 10 mA, IB = 0

50

hFE (1)
VCE = 1 V, IC = 1 A
(Note)

70

240

hFE (2)

VCE = 1 V, IC = 3 A

30

Collector-emitter saturation voltage

VCE (sat)

IC = 3 A, IB = 0.15 A

0.2

0.4

Base-emitter saturation voltage

VBE (sat)

IC = 3 A, IB = 0.15 A

0.9

1.2

fT

VCE = 4 V, IC = 1 A

60

MHz

VCB = 10 V, IE = 0, f = 1 MHz

170

pF

0.1

1.0

0.1

DC current gain

Transition frequency
Collector output capacitance

Cob

Turn-on time

ton
20 s

Storage time

tstg

Fall time

Note: hFE (1) classification

tf

IB2
IB1

Switching time

INPUT

IB2
IB1

OUTPUT
10

Collector-emitter breakdown voltage

VCC = 30 V

IB1 = IB2 = 0.15 A,

DUTY CYCLE 1%

O: 70 to 140, Y: 120 to 240

Marking

A1244

Product No.
Lot No.

hFE Classification

Explanation of Lot No.

Month of manufacture: January to December are denoted by letters A to L respectively.

Year of manufacture: last decimal digit of the year of manufacture

2002-07-23

2SA1244

IC VCE

VCE IC

1.0
Common emitter

VCE

70

60

Collector-emitter voltage

(A)

Tc = 25C

IC
Collector current

(V)

Common emitter
80

50
4

40
30

20
IB = 10 mA

0
0

Collector-emitter voltage

VCE

0.8
10

30

100

300
350

0.4

400
500

0.2

Collector current

VCE IC

IC

20

40

(V)
150
200
250
300
350
400

100

0.6

0.4

VCE

0.8

Collector-emitter voltage

(V)
VCE
Collector-emitter voltage

(A)

Common emitter

Tc = 100C

500

0.2

IC

Collector-emitter saturation voltage

VCE (sat) (V)

300
Tc = 100C
25
55

Collector current

150

200

0.6

100
300

0.4
400
500
0.2

IC

(A)

VCE (sat) IC

VCE = 1 V

0.3

80

500

0.1

40

Collector current

Common emitter

50

20

(A)

1000

100

Tc = 55C

IB = 60 mA

0.8

0
0

hFE IC

hFE

VCE IC

IB = 60 mA

Collector current

DC current gain

1.0
Common emitter

20
0.03

150
200

(V)

1.0

0
0

Tc = 25C

0.6

0
0

IB = 60 mA

IC

Common emitter

0.5
0.3

Tc = 100C
0.1

(A)

25

0.05
0.03
0.03

10

IC/IB = 20

55
0.1

0.3

Collector current

IC

10

(A)

2002-07-23

2SA1244

VBE (sat) IC

IC VBE

10
5

Common emitter

IC/IB = 20

VCE = 1 V
4

IC

(A)

Tc = 55C

Collector current

Base-emitter saturation voltage

VBE (sat) (V)

Common emitter
5

0.5
25
100

0.3

3
Tc = 100C
25
2

55

1
0.1
0.03

0.1

0.3

Collector current

IC

10
0
0

(A)

0.4

0.8

1.2

1.6

2.0

Base-emitter voltage VBE

28
IC max (pulsed)*
IC max (continuous)

10 ms*

Collector power dissipation

DC operation Tc = 25C

(A)
IC
Collector current

(1) Tc = Ta infinite heat sink

1 ms*

PC (W)

1
0.5
0.3

0.1
0.05
0.03

(V)

PC Ta

Safe Operating Area

10
5

2.4

*: Single nonrepetitive pulse

Tc = 25C
Curves must be derated linearly

0.3

Collector-emitter voltage

20

12
8
4

VCE

30

(2)
(3)

0
0
10

(1)

16

VCEO max

with increase in temperature.

0.01
0.1

(2) Ceramic substrate

50 50 0.8 mm
(3) No heat sink

24

20

40

60

80

100

120

140

160

Ambient temperature Ta (C)

100

(V)

2002-07-23

2SA1244

RESTRICTIONS ON PRODUCT USE

000707EAA

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customers own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.

2002-07-23

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