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by MJ21193/D

SEMICONDUCTOR TECHNICAL DATA

 





  


The MJ21193 and MJ21194 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.

*Motorola Preferred Device

16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
250 WATTS

Total Harmonic Distortion Characterized


High DC Current Gain hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 2.5 A, 80 V, 1 Second

CASE 107
TO204AA
(TO3)

MAXIMUM RATINGS
Rating

Symbol

Value

Unit

CollectorEmitter Voltage

VCEO

250

Vdc

CollectorBase Voltage

VCBO

400

Vdc

EmitterBase Voltage

VEBO

Vdc

CollectorEmitter Voltage 1.5 V

VCEX

400

Vdc

Collector Current Continuous


Collector Current Peak (1)

IC

16
30

Adc

Base Current Continuous

IB

Adc

Total Power Dissipation @ TC = 25C


Derate Above 25C

PD

250
1.43

Watts
W/C

TJ, Tstg

65 to +200

Symbol

Max

Unit

RJC

0.7

C/W

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)


Characteristic

Symbol

Min

Typical

Max

Unit

VCEO(sus)

250

Vdc

ICEO

100

Adc

OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5 s, Duty Cycle 10%.

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola, Inc. 1995


Motorola Bipolar Power Transistor Device Data

 
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Symbol

Min

Typical

Max

Unit

Emitter Cutoff Current


(VCE = 5 Vdc, IC = 0)

IEBO

100

Adc

Collector Cutoff Current


(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)

ICEX

100

Adc

5
2.5

25
8

2.2

1.4
4

Characteristic
OFF CHARACTERISTICS

SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (nonrepetitive)
(VCE = 80 Vdc, t = 1 s (nonrepetitive)

IS/b

Adc

ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, IB = 5 Adc)

hFE

75

BaseEmitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)

VBE(on)

CollectorEmitter Saturation Voltage


(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)

VCE(sat)

Vdc
Vdc

DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
(Matched pair hFE = 50 @ 5 A/5 V)

THD

hFE
unmatched
hFE
matched

Current Gain Bandwidth Product


(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
(1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2%

0.8

0.08

fT

MHz

Cob

500

pF

NPN MJ21194

6.5
6.0

VCE = 10 V

5.5
5V
5.0
4.5
4.0
3.5
3.0
0.1

TJ = 25C
ftest = 1 MHz
1.0
IC COLLECTOR CURRENT (AMPS)

Figure 1. Typical Current Gain


Bandwidth Product

10

f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz)

PNP MJ21193
8.0
7.0

10 V

6.0
5.0
VCE = 5 V

4.0
3.0
2.0
TJ = 25C
ftest = 1 MHz

1.0
0
0.1

1.0
IC COLLECTOR CURRENT (AMPS)

Figure 2. Typical Current Gain


Bandwidth Product

Motorola Bipolar Power Transistor Device Data

10

 
TYPICAL CHARACTERISTICS
PNP MJ21193

NPN MJ21194
1000

hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

1000

TJ = 100C
25C

100

25C

TJ = 100C
25C
100
25C

VCE = 20 V
10
0.1

VCE = 20 V

1.0
10
IC COLLECTOR CURRENT (AMPS)

10
0.1

100

Figure 4. DC Current Gain, VCE = 20 V

PNP MJ21193

NPN MJ21194

hFE , DC CURRENT GAIN

hFE , DC CURRENT GAIN

1000

TJ = 100C
25C
100
25C

TJ = 100C
25C
100
25C

VCE = 5 V
10
0.1

VCE = 20 V

1.0
10
IC COLLECTOR CURRENT (AMPS)

10
0.1

100

1.0
10
IC COLLECTOR CURRENT (AMPS)

100

Figure 5. DC Current Gain, VCE = 5 V

Figure 6. DC Current Gain, VCE = 5 V

PNP MJ21193

NPN MJ21194
35

30
25
20

IB = 2 A

IB = 2 A

30
I C, COLLECTOR CURRENT (A)

1.5 A
I C, COLLECTOR CURRENT (A)

100

Figure 3. DC Current Gain, VCE = 20 V

1000

1A

15
0.5 A
10
5.0

1.5 A
25
1A
20
15

0.5 A

10
5.0

TJ = 25C
0

1.0
10
IC COLLECTOR CURRENT (AMPS)

TJ = 25C
0

5.0
10
15
20
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 7. Typical Output Characteristics

Motorola Bipolar Power Transistor Device Data

25

5.0
10
15
20
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

25

Figure 8. Typical Output Characteristics

 
TYPICAL CHARACTERISTICS
PNP MJ21193

NPN MJ21194
1.4

2.5

TJ = 25C

2.0

IC/IB = 10

SATURATION VOLTAGE (VOLTS)

SATURATION VOLTAGE (VOLTS)

3.0

1.5
VBE(sat)

1.0
0.5

1.2

TJ = 25C

1.0

IC/IB = 10

0.8
0.6
0.4
0.2

VCE(sat)

0
0.1

1.0
10
IC, COLLECTOR CURRENT (AMPS)

VCE(sat)

0
0.1

100

Figure 9. Typical Saturation Voltages

1.0
10
IC, COLLECTOR CURRENT (AMPS)

100

Figure 10. Typical Saturation Voltages

PNP MJ21193

NPN MJ21194
10

10
VBE(on) , BASEEMITTER VOLTAGE (VOLTS)

VBE(on) , BASEEMITTER VOLTAGE (VOLTS)

VBE(sat)

TJ = 25C
1.0

VCE = 20 V (SOLID)

0.1
0.1

VCE = 5 V (DASHED)

1.0
10
IC, COLLECTOR CURRENT (AMPS)

100

Figure 11. Typical BaseEmitter Voltage

TJ = 25C

VCE = 20 V (SOLID)
1.0

0.1
0.1

VCE = 5 V (DASHED)

1.0
10
IC, COLLECTOR CURRENT (AMPS)

100

Figure 12. Typical BaseEmitter Voltage

IC, COLLECTOR CURRENT (AMPS)

100

There are two limitations on the power handling ability of a


transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.

1 SEC

10

TC = 25C
1.0

0.1
1.0

10

100

1000

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 13. Active Region Safe Operating Area

Motorola Bipolar Power Transistor Device Data

 
10000

10000
Cib

1000

TJ = 25C
C, CAPACITANCE (pF)

C, CAPACITANCE (pF)

TJ = 25C

Cob

Cib

1000
Cob

f(test) = 1 MHz
100
0.1

f(test) = 1 MHz
1.0

10

100

100
0.1

1.0

10

VR, REVERSE VOLTAGE (VOLTS)

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. MJ21193 Typical Capacitance

Figure 15. MJ21194 Typical Capacitance

100

1.2

T , TOTAL HARMONIC
HD
DISTORTION (%)

1.1
1.0
0.9
0.8
0.7
0.6
10

100

1000
FREQUENCY (Hz)

10000

100000

Figure 16. Typical Total Harmonic Distortion

+50 V
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER

SOURCE
AMPLIFIER

50
DUT
0.5

0.5

8.0

DUT

50 V

Figure 17. Total Harmonic Distortion Test Circuit

Motorola Bipolar Power Transistor Device Data

 
PACKAGE DIMENSIONS

A
N

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO204AA OUTLINE SHALL APPLY.

C
T
E
D

2 PL

0.13 (0.005)
U

T Q

SEATING
PLANE

T Y

Q
0.13 (0.005)

DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V

INCHES
MIN
MAX
1.550 REF

1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC

0.830
0.151
0.165
1.187 BSC
0.131
0.188

MILLIMETERS
MIN
MAX
39.37 REF

26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC

21.08
3.84
4.19
30.15 BSC
3.33
4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

CASE 107
TO204AA (TO3)
ISSUE Z

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different
applications. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 85226629298

Motorola Bipolar Power Transistor Device Data

*MJ21193/D*

MJ21193/D

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