AP4951GM-HF

Halogen-Free Product

Advanced Power
Electronics Corp.

DUAL P-CHANNEL ENHANCEMENT

MODE POWER MOSFET

Simple Drive Requirement

D2
D2

Low Gate Charge

D1
D1

Fast Switching Performance

RoHS Compliant & Halogen-Free
SO-8

S1

S2
G1

BVDSS

-60V

RDS(ON)

96m

ID

-3.4A

G2

Description
AP4951 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.

D2

D1

G2

G1

S2

S1

The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
o

Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)

Symbol

Parameter

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

ID@TA=25
ID@TA=70

Drain Current, VGS @ 10V

Drain Current, VGS @ 10V

Rating

Units

-60

+20

-3.4

-2.7

-20

IDM

Pulsed Drain Current

PD@TA=25

Total Power Dissipation

Linear Derating Factor

0.016

W/

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol
Rthj-a

Parameter
Maximum Thermal Resistance, Junction-ambient

Data and specifications subject to change without notice

Value

Unit

62.5

/W
1
201501125

AP4951GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol

Parameter

Test Conditions

Min.

Typ.

-60

-0.04

V/

VGS=-10V, ID=-3.4A

96

VGS=-4.5V, ID=-2.7A

120

BVDSS

Drain-Source Breakdown Voltage

BVDSS/Tj

Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA

RDS(ON)

VGS=0V, ID=-250uA

Static Drain-Source On-Resistance

Max. Units

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-3

gfs

Forward Transconductance

VDS=-10V, ID=-3.4A

3.4

IDSS

Drain-Source Leakage Current

VDS=-60V, VGS=0V

-1

uA

Drain-Source Leakage Current (Tj=70 C) VDS=-48V, VGS=0V

-25

uA

IGSS

Gate-Source Leakage

VGS=+20V, VDS=0V

+100

nA

Qg

Total Gate Charge

ID=-3A

29.5

nC

Qgs

Gate-Source Charge

VDS=-48V

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-10V

nC

td(on)

Turn-on Delay Time

VDS=-30V

11

20

ns

tr

Rise Time

ID=-1A

10

ns

td(off)

Turn-off Delay Time

RG=3.3,VGS=-10V

39

80

ns

tf

Fall Time

RD=30

10.5

20

ns

Ciss

Input Capacitance

VGS=0V

1320

pF

Coss

Output Capacitance

VDS=-25V

125

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

95

pF

Min.

Typ.

IS=-2.1A, VGS=0V

-1.2

Source-Drain Diode
Symbol

Parameter
2

Test Conditions

Max. Units

VSD

Forward On Voltage

trr

Reverse Recovery Time

IS=-3A, VGS=0V,

39

80

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

64

nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 /W when mounted on Min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

AP4951GM-HF
40

30

-10V
-7.0V
-5.0V
-4.5V

30

-10V
-7.0V
-5.0V
-4.5V

T A =150 o C

-ID , Drain Current (A)

-ID , Drain Current (A)

T A =25 o C

20

V G =-3.0V

20

V G =- 3 .0V
10

10

0
0

10

-V DS , Drain-to-Source Voltage (V)

10

12

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

I D = -2.7A
T A =25

I D = -3.4A
V G = -10V
Normalized RDS(ON)

RDS(ON) (m )

1.6
90

80

1.2

0.8

0.4

70
2

-50

10

-V GS , Gate-to-Source Voltage (V)

50

100

150

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature
1.8

10.00

1.6

8.00

-IS(A)

T j =25 o C

1.4

-VGS(th) (V)

T j =150
C

6.00

1.2

4.00
1

2.00
0.8

0.00

0.6

0.2

0.4

0.6

0.8

1.2

-V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.4

-50

50

100

150

T j , Junction Temperature ( C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature
3

AP4951GM-HF
f=1.0MHz
12

10000

I D = -3A
V DS = -48V

C iss

1000

C (pF)

-VGS , Gate to Source Voltage (V)

10

C oss
C rss

100

10
0

10

20

30

40

Fig 7. Gate Charge Characteristics

13

17

21

25

29

Fig 8. Typical Capacitance Characteristics

100

100us
1ms

10ms
100ms

0.1

1s

T A =25 o C
Single Pulse

DC

0.01

Normalized Thermal Response (R thja)

10

-ID (A)

-V DS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Duty factor = 0.5

0.2

0.1

0.1

0.05

0.02

0.01

PDM

0.01

t
T
Single Pulse

Duty Factor = t/T

Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W

0.001
0.1

10

100

0.0001

0.001

0.01

-V DS , Drain-to-Source Voltage (V)

0.1

10

100

1000

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

20

V DS = -5V
o

T j =25 C

VG

T j =150 C

-ID , Drain Current (A)

16

QG
-10V

12

QGS

QGD

Charge

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

Fig 12. Gate Charge Waveform

AP4951GM-HF
MARKING INFORMATION

Part Number

4951GM
YWWSSS

meet Rohs requirement

for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence