AP4953GM

RoHS-compliant Product

Advanced Power
Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

Simple Drive Requirement

D2

Low Gate Charge

Fast Switching

D2
D1
D1

BVDSS

-30V

RDS(ON)

53m

ID

-5A

G2
S2

SO-8

S1

G1

Description

D2

D1

The Advanced Power MOSFETs from APEC provide the designer

with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.

G2

G1

S2

S1

The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.

Absolute Maximum Ratings

Symbol

Parameter

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

ID@TA=25
ID@TA=70

Rating

Units

- 30

20

-5

-4

- 20

Continuous Drain Current

Continuous Drain Current

1

IDM

Pulsed Drain Current

PD@TA=25

Total Power Dissipation

Linear Derating Factor

0.016

W/

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol
Rthj-a

Parameter
Thermal Resistance Junction-ambient 3

Data and specifications subject to change without notice

Max.

Value

Unit

62.5

/W

201009074-1/4

AP4953GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)

Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance

VGS(th)

Gate Threshold Voltage

gfs

Forward Transconductance

IDSS

Test Conditions

Typ.

-30

VGS=-10V, ID=-5A

53

VGS=-4.5V, ID=-4A

90

VDS=VGS, ID=-250uA

-1

-3

VGS=0V, ID=-250uA
2

Max. Units

VDS=-10V, ID=-5A

VDS=-30V, VGS=0V

-1

uA

Drain-Source Leakage Current (Tj=70 C)

VDS=-24V, VGS=0V

-25

uA

Gate-Source Leakage

VGS=20V

100

nA

ID=-5A

15

nC

Drain-Source Leakage Current (Tj=25 C)

IGSS

Min.

Qg

Total Gate Charge

Qgs

Gate-Source Charge

VDS=-15V

1.7

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

4.5

nC

VDS=-15V

6.7

ns

td(on)

Turn-on Delay Time

tr

Rise Time

ID=-1A

10

ns

td(off)

Turn-off Delay Time

RG=3.3,VGS=-10V

21

ns

tf

Fall Time

RD=15

10

ns

Ciss

Input Capacitance

VGS=0V

595

952

pF

Coss

Output Capacitance

VDS=-25V

80

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

75

pF

Min.

Typ.

IS=-1.7A, VGS=0V

-1.2

Source-Drain Diode
Symbol
VSD

Parameter
2

Forward On Voltage

Test Conditions

Max. Units

trr

Reverse Recovery Time

IS=6A, VGS=0V,

18

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

11

nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 /W when mounted on Min. copper pad.

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT

DEVICE OR SYSTEM ARE NOT AUTHORIZED.

2/4

AP4953GM
40

40

30

-ID , Drain Current (A)

-ID , Drain Current (A)

30

20

V G = -3.0V
10

20

V G = - 3.0 V
10

0
0

-V DS , Drain-to-Source Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

70

1.8

I D =-4A
T A =25

I D =-5A
V G =-10V

1.6

60

1.4

Normalized RDS(ON)

RDS(ON) (m)

-10V
-7.0V
-5.0V
-4.5V

T A =150 o C

-10V
-7.0V
-5.0V
-4.5V

T A =25 C

50

1.2

1.0

0.8

0.6

40
2

10

-50

-V GS , Gate-to-Source Voltage (V)

50

100

150

T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

8.00

1.6

Normalized -VGS(th) (V)

1.4

-IS(A)

6.00

T j =150 C

T j =25 C

4.00

1.2

0.8

2.00
0.6

0.00

0.4
0

0.2

0.4

0.6

0.8

1.2

-V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.4

-50

50

100

150

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature
3/4

AP4953GM
f=1.0MHz
14

1000

10

C (pF)

-VGS , Gate to Source Voltage (V)

C iss

I D =-5A
V DS =-15V

12

100

C oss

C rss

10
0

12

16

20

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

13

17

21

25

29

Fig 8. Typical Capacitance Characteristics

Normalized Thermal Response (Rthja)

100

10

100us
1ms
-ID (A)

-V DS , Drain-to-Source Voltage (V)

10ms
100ms
1s

T A =25 o C
Single Pulse

0.1

Duty Factor = 0.5

0.2

0.1

0.1

0.05

PDM

t
T

0.02

Duty Factor = t/T

Peak Tj = PDM x Rthja + T a

0.01

DC

Rthja=135 oC/W

Single Pulse

0.01

0.01
0.1

10

100

0.0001

0.001

0.01

-V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

0.1

10

100

1000

t , Pulse Width (s)

Fig 10. Effective Transient Thermal Impedance

VG

VDS
90%

QG
-4.5V
QGS

QGD

10%
VGS
td(on) tr

td(off) tf

Fig 11. Switching Time Waveform

Charge

Fig 12. Gate Charge Waveform

4/4

ADVANCED POWER ELECTRONICS CORP.

Package Outline : SO-8

D

Millimeters

5
E1

SYMBOLS

MIN

NOM

MAX

1.35

1.55

1.75

A1

0.10

0.18

0.25

0.33

0.41

0.51

0.19

0.22

0.25

4.80

4.90

5.00

E1

3.80

3.90

4.00

5.80

6.15

6.50

0.38

0.71

1.27

4.00

8.00

1.27 TYP

A
A1
DETAIL A

1.All Dimension Are In Millimeters.

2.Dimension Does Not Include Mold Protrusions.

c
DETAIL A

Part Marking Information & Packing : SO-8

Part Number

4953GM
YWWSSS

Package Code

meet Rohs requirement

Date Code (YWWSSS)

YLast Digit Of The Year
WWWeek
SSSSequence