Surface Charge Distribution of Piezoelectrics at Thickness and Planar Piezoresonance

SURFACE CHARGE DISTRIBUTION OF PIEZOLELECTRICS AT
THICKNESS AND PLANAR PIEZORESONANCE
APPROVED BY SUPERVISING COMMITTEE:

________________________________________
Ruyan Guo, Ph.D., Chair
________________________________________
Amar Bhalla, Ph.D.
________________________________________
Nikolaos Gatsis, Ph.D.
Accepted: _________________________________________
Dean, Graduate School
DEDICATION
This is dedicated to my wife Michell, who provided constant encouragement, support and love
throughout. I would like to also dedicate this to my family, my mother Lynn, my Father Dan and
my brother Levi all of whom gave me reassurance to keep going and to succeed.
SURFACE CHARGE DISTRIBUTION OF PIEZOELECTRICS AT

THICKNESS AND PLANAR PIEZORESONANCE
by
CHANCE RABUN, M.S.E.E.
THESIS
Presented to the Graduate Faculty of
The University of Texas at San Antonio
in Partial Fulfillment
of the Requirements
for the Degree of
MASTER OF SCIENCE IN ELECTRICAL ENGINEERING
THE UNIVERSITY OF TEXAS AT SAN ANTONIO

College of Engineering
Department of Electrical and Computer Engineering
August 2016
ACKNOWLEDGEMENTS
I would like to acknowledge Dr. Ruyan Guo for her constant guidance and immense
knowledge which was of supreme help to my conducting of this thesis. Her patience with me has
been angelic, her explanations sometimes go over my head but she will always take the time to
explain the concepts and theories in a way that will make sense. She has seen me through the
graduate program, my research and my thesis and provided a helping hand throughout the
journey and for that I am eternally grateful.
Dr. Amar Bhalla has lent me his encyclopedic knowledge of materials science, solid state
physics, electrical engineering and many other subjects numerous times giving me the assistance
to complete my task. His gift for teaching is incredible and he can explain abstract and complex
concepts deftly so that anyone can understand. I want to thank him for his guidance and support,
without it I would not be where I am today.
I wish to thank Moumita Dutta for aiding me in my experiments, research and thesis. Her
grasp on materials science, electrical engineering and physics has been of great support and I
cannot thank her enough.
Juan Tamez lent his expertise on piezoelectrics to me and aided my experiments giving
me the tools and knowledge to complete my thesis and for that I thank him.
I want to thank Brandon Young who has always been there to assist and give help when I
required it. I want to thank him for consistently helping me throughout the course of graduate
school.
Bryan Gamboa has helped me in the lab many times and gives his helping hand without
hesitation; I want to say I appreciate his willingness to assist and his attitude of always helping.
iv
I appreciate Lily Mengs assistance, which she gave readily and without second thought.
Her help aided me greatly and I wish to thank her for that.
The following acknowledgments are for funding received to help facilitate my research:
This research work has been supported by the Office of Naval Research under the grant
#UTA14-000795 (N00014-14-1-0690) and by National Science Foundation under the Grant
#ECCS 1002380.
August 2016
v
SURFACE CHARGE DISTRIBUTION OF PIEZOELECTRICS

AT THICKNESS AND PLANAR PIEZORESONANCE
Chance Rabun, M.S.E.E.

The University of Texas at San Antonio, 2016
Supervising Professor: Ruyan Guo, Ph.D.
This thesis looks at piezoelectric materials surface charge profiles at the piezoresonant
and anti-resonant states. Piezoelectric materials experience a resonant state at certain frequencies
depending on a multitude of factors and at these frequencies the admittance is at a maximum
while the admittance reaches a minimum at the antiresonant state. Two PZT samples were
observed at this state in regards to its surface charge density and profile. A completely electroded
sample is measured using an 11x11 matrix overlay and a sample with an 11x11 matrix engraved
into its electrode forming 121 isolated islands is used. The samples were measured at the planar
mode resonance, antiresonance and the thickness mode resonance. A theoretical simulation is
conducted at the planar resonant and antiresonant frequencies as well as the thickness mode
resonant frequency. The established surface pattern is determined to be developed independently
of metallization and free charge carriers and is experimentally verified to be a bound charge
contribution coming from the bulk dielectric. Comparisons are drawn between the experimental
potential difference distribution figures and the simulated plots of surface displacement where it
was seen to have comparable similarities, verifying theoretically what was observed
experimentally. The surface charge density, by Gausss Law is proportional to the distance
derivative of the potential difference. Both samples were observed to develop a convex profile
with peaking values at the sample center at and near the planar resonant and antiresonant
vi
frequencies. The thickness mode resonant frequency developed a profile that had some of the
lowest surface charge values at the sample center and peaking values at the rows in between the
edge and the center. The admittance values were determined to be directly proportional to the
potential difference magnitude as well, verifying the work of Imai, Tanaka and Yong (2001).
This work demonstrates the correlation between the resonant frequencies and the surface charge
profiles of piezoelectrics as well as the correspondence to surface displacement magnitudes
shown in the finite element simulation. This work provides one of the first experimental
evidences that bulk electromechanical strain is coupled with and may be imaged by surface
charges, on an insulating or through conductive surface layers. Such insights are important in
furthering research on dynamically tunable surface wave devices for a wide range of potential
applications.
vii
TABLE OF CONTENTS
Acknowledgements ........................................................................................................................ iv
Abstract .......................................................................................................................................... vi
List of Tables ................................................................................................................................ ix
List of Figures ..................................................................................................................................x
Chapter One: Introduction ...............................................................................................................1
1.1 Motivations and Statement of Research ........................................................................1
1.2 Piezoelectricity...............................................................................................................2
1.3 Surface Charge and Polarization ....................................................................................7
Chapter Two: Experimental Setup .................................................................................................15
2.1 Basic Setup...................................................................................................................15
2.2 PZT Samples ................................................................................................................16
2.3 Keithley 2182A Nanovoltmeter ...................................................................................20
2.4 HP 33120A Function Generator ..................................................................................21
2.5 HP 4194A Impedance Analyzer ..................................................................................22
Chapter Three: Results and Analysis .............................................................................................27
3.1 Results ..........................................................................................................................27
3.2 Complete Electrode PZT Sample.................................................................................27
3.2.1 50 kHz ...........................................................................................................27
3.2.2 80 kHz ...........................................................................................................29
3.2.3 83.125 kHz ....................................................................................................31
3.2.4 91.845 kHz ....................................................................................................33
3.2.5 100.863 kHz ..................................................................................................34
viii
3.2.6 102.625 kHz ..................................................................................................36

3.2.7 113 kHz .........................................................................................................38
3.2.8 996.625 kHz ..................................................................................................39
3.2.9 DC-1V ...........................................................................................................42
3.3 Engraved Matrix PZT ..................................................................................................44
3.3.1 100.835 kHz ..................................................................................................44
3.3.2 102.375 kHz ..................................................................................................47
3.3.3 1.094475 MHz ..............................................................................................49
3.4 Analysis........................................................................................................................52
Chapter Four: Conclusion and Future Work..................................................................................60
Appendix........................................................................................................................................63
References ......................................................................................................................................70
Vita
ix
LIST OF TABLES
Table 1
Planar and Thickness mode frequencies for both samples ....................................26
LIST OF FIGURES
Figure 1.1
Piezoelectric equivalent circuit ................................................................................5
Figure 1.2
Piezoelectric mode measurement .............................................................................6
Figure 1.3
Dipole configuration ................................................................................................7
Figure 1.4
Charged dielectric ....................................................................................................8
Figure 1.5
Atom with electron cloud polarization ..................................................................10
Figure 1.6
Dielectric lattice .....................................................................................................11
Figure 1.7
Dipole distribution .................................................................................................11
Figure 1.8
Space charge polarization ......................................................................................12
Figure 1.9
Piezoelectric ceramic structure around Curie temperature ....................................13
Figure 2.1
Experimental setup.................................................................................................16
Figure 2.2
PZT perovskite structure ........................................................................................17
Figure 2.3
Complete electrode PZT ........................................................................................18
Figure 2.4
Planar mode admittance curve for complete electrode PZT ..................................18
Figure 2.5
Engraved matrix PZT .............................................................................................19
Figure 2.6
Planar mode admittance curve for engraved matrix PZT ......................................20
Figure 2.7
2182A front panel ..................................................................................................21
Figure 2.8
3120A front panel ..................................................................................................22
Figure 2.9
Admittance curve for complete electrode PZT ......................................................23
Figure 2.10
Planar mode admittance curve for complete electrode PZT ..................................23
Figure 2.11
Thickness mode admittance curve for complete electrode PZT ............................24
Figure 2.12
Admittance curve for engraved matrix PZT ..........................................................24
Figure 2.13
Planar mode admittance curve for engraved matrix PZT ......................................25

xi
Figure 2.14
Thickness mode admittance curve for engraved matrix PZT ................................25
Figure 3.1
3D plot for complete electrode PZT at 50 kHz ......................................................28
Figure 3.2
Figure 3.3
Figure 3.4
Figure 3.5
3D plot for complete electrode PZT at 83.125 kHz ...............................................32
Figure 3.6
Figure 3.7
Figure 3.8
Figure 3.9
3D plot for complete electrode PZT at 100.563 kHz .............................................35
Figure 3.10
Figure 3.11
Figure 3.12
Figure 3.13
3D plot for complete electrode PZT at 113 kHz ....................................................38
Figure 3.14
3D plot for complete electrode PZT at 113 kHz ....................................................39
Figure 3.15
Figure 3.16
Figure 3.17
Figure 3.18
3D plot for complete electrode PZT at DC 1V ...................................................42
Figure 3.19
Figure 3.20
Figure 3.21
3D plot for engraved matrix PZT at 100.835 kHz .................................................45
Figure 3.22

xii
Figure 3.23
Figure 3.24
Figure 3.25
3D plot for engraved matrix PZT at 1.094475 MHz .............................................50
Figure 3.26
Figure 3.27
Figure 3.28
2D contour plots for both samples at planar resonance .........................................52
Figure 3.29
COMSOL simulation of surface displacement at planar resonance .....................53
Figure 3.30
2D contour plots for both samples at planar antiresonance ...................................54
Figure 3.31
COMSOL simulation of surface displacement at planar antiresonance ................55
Figure 3.32
2D contour plots for both samples at planar antiresonance ...................................56
Figure 3.33
COMSOL simulation of surface displacement at thickness resonance .................57
xiii
CHAPTER ONE: INTRODUCTION

In recent decades, research in the field of piezoelectric material behavior has seen
significant advancement and interest. Due to the nature of piezoelectric materials and their
abilities to translate mechanical stress to electric polarization and to produce the converse of a
mechanical deformation of the sample via an applied electric field, these materials have
tremendous potential applications in the modern technological world. These materials can see
usage in multiple fields of application such as energy harvesting, electrical and mechanical
sensors, and monitors.
This thesis will analyze the potential relation between the surface charge density and
profile of a piezoelectric material at the resonant and antiresonant states. The possible
relationship between these two physical phenomena has not been thoroughly examined and
defined so through experimental analysis and data examination the goal of this thesis is to
establish what correlation can be observed. To understand the significance and motivations, a
theoretical introduction and background should be considered and over the next few pages of this
chapter a review of piezoelectricity and polarization will be discussed.
1.1 Motivations and Statement of Research
The study of piezoelectric materials has been a significant scientific endeavor since its
potential was first realized. Study of its effects on optics and wave propagation has been
immense. Study of its effects on charge density and distribution has been fairly significant as
well. The accumulation charge can lead to device failure, early breakdown and ageing, but study
of the effect on surface charge density at the resonant state has been lacking. This is the area in
which this thesis is attempting to rectify that. Tatsuo Takada has done a large amount of research
on charge distributions in dielectrics utilizing a piezoelectric pressure wave propagation (PWP)
1
and pulsed electro-acoustic (PEA) method of measuring the charge distributions of dielectrics
[12,13,14]. These methodologies utilize high voltage and high speed pulses to generate acoustic
waves in the sample and complex equations are used to determine the surface charge. The
conclusion of these experiments is concerned with the comparison of results of the two
methodologies and not the effects or relation of surface charge density to any other parameter.
The resonant state of piezoelectrics has shown to have significant effects on optical
transmission via the enhancement of the electro-optic coefficients. It was observed by Guo et. al.
that when the light is propagating transversely to the strain developed near the d 31 and d33 modes
the optical transmission is increased [18]. It is noted that the effective electro-optic coefficient is
the most significant at the occurrence of large changes in the electrical admittance with
frequency. The piezoresonant state has demonstrated noteworthy changes in material parameters
and it is one of the more considerable reasons behind the motivations of this thesis.
This thesis aims to observe the relationship between piezoelectrics at and near resonant and
antiresonant frequencies and their surface charge density and distribution which will further the
understanding of the field of piezoelectrics as a whole aiding the applications of this technology
into the engineering field.
1.2 Piezoelectricity
The Greek prefix of piezo- is derived from the word piezein in Greek, which translates to
pressure. This is a very appropriate name for a class of materials that produce electric
polarization in response to a mechanical stress. Discovered by Jacques and Pierre Curie in 1880
in certain crystals, quartz and other materials, the term was used to differentiate between it and
electrostriction. The effect can be seen in crystals constructed of polar molecules showing noncentrosymmetrical structure. This effect differs from electrostriction in the sense that
2
electrostriction occurs in all materials from the fact that a applied electric field will always result
in a mechanical deformation due to the presence of a charged nucleus accompanied by an
electron cloud. The electric field induces a polarization and cause a distortion of the charge
density resulting in a mechanical alteration. This effect is very small in a majority of cases and is
not inversive therefore it cannot induce dipole moments. Piezoelectricity is actually a unique
case of electrostriction, the flux of an applied electric field results in the orientation of randomly
aligned electric domains along the lines of flux thereby causing slight mechanical deformations
of the structure.
The direct effect of piezoelectricity is the generation of an electric polarization by the
application of a mechanical stress across the material. The equation below gives the tensor form
of the phenomenon where denotes the single rank tensor of electric polarization, denotes
the piezo coefficient, and gives the mechanical stress. The coefficient has the unit C/N.
=
(1.1)
The converse piezoelectric effect couples the single rank tensor of the applied electric
field with the induced mechanical strain given by the second rank tensor by the
piezoelectric coefficient which has the unit of m/V.
=
(1.2)
The tensor equations above display the coupling relations while a more detailed matrix
form of the equations and relationships can be defined by the Stress-Charge and Strain-Charge
equations. The Stress-Charge equation gives the material stress X, a functional relationship to
elastic stiffness , the difference in the strain, induced minus initial ( ), the transposed
coupling matrix , the electric field E, and initial stress . It gives the electrical displacement
D as a function of the piezoelectric coupling , the difference in strain, induced minus initial
3
( ), the permittivity of free space 0 , the relative permittivity , and the remnant electric
displacement [3].
= ( ) +
(1.3)
= ( ) 0
(1.4)
The Strain-Charge equations gives the overall strain , as dependent on elastic

compliance , the difference in stress, induced minus initial ( ), the transposed coupling
matrix given by , the E-field , the initial strain . Electrical displacement , is given as the
function of the piezoelectric coupling , the difference between stress, induced minus initial
( ), the permittivity of free space 0 , the constant temperature relative permittivity , and
the remnant electric displacement .
= ( ) +
(1.5)
= ( ) 0
(1.6)
Piezoelectric materials can be operated at resonant states, where the applied electric field
frequency is matched with the mechanical resonance of the sample. The resonant frequencies of
the sample are a function of the elastic properties of the material, the density, and the geometric
dimensions that are related to the specific resonant mode. The behavior of the material can be
modeled by the figure (1.1a) below, showing the static capacitance as Co and the motional
portion of the equivalent circuit are given by Cm, Lm, and Rm [7]. The figure also shows the
resonant behavior, at the resonant frequency, fr the admittance is at a maximum and impedance
at a minimum, while the opposite is true for the anti-resonant frequency denoted by fa. While in
the resonance state, the strain and changes in the motional capacitance are induced and are
significant, because of this current flow is unimpeded. During the antiresonant state, the induced
strain is compensated for and no change in capacitance occurs resulting in impeded current flow.
4
Figure 1.1: a) Piezoelectric equivalent circuit b) Graph of admittance as a function of

frequency for piezoelectric resonator at resonant and antiresonant frequencies.
The equations below give the sample resonant and anti-resonant frequency in terms of the
components of the equivalent circuit in figure (1.1a).
1
= 2
1
(1.7)
+0
= 2
(1.8)
It is important when discussing piezoresonant materials to introduce the

electromechanical coupling factor , which is related to the resonant and antiresonant
frequencies by the equation below [9].
2 =
0 +
2 2
2
(1.9)
The electromechanical coupling factor can also be interpreted as the effectiveness of the
piezoelectric material to convert input electrical energy into mechanical energy. The
electromechanical coupling factor takes on several forms depending upon the direction of the
electric field applied and the direction of the induced strain in the material. For the transverse
case, the polarization which is in the same direction as the electric field is perpendicular to the
strain induced in the sample and the coupling coefficient is given as 31 [10]. The longitudinal
5
case occurs when the induced strain is in the same direction as the polarization, which is in the
same direction as the applied electric field and the corresponding coupling coefficient is given by
33 . Other coefficients in other directions and setups are referred to as shear coefficients. Both of
these transverse and longitudinal coefficients can be derived from the piezoelectric, elastic, and
dielectric constants as well as from the measured resonant and antiresonant frequencies as given
in the equations below.
2
31 =
31 2

11
33
33 2 = 33 =
33 33

[ ( )]
2
2

1+
[ (
)]
2
2
[ 2 ( )]
(1.10)
(1.11)
Figure 1.2: General setup to measure the specific directional piezoelectric coefficients.
Piezoelectric samples will maintain the piezoelectric characteristics up to the point
known as the Curie point. Below the Curie point, the sample is electrically polarized without the
existence of an externally applied electric field as the particles in the unit cell are unsymmetrical
allowing for the net polarization [11]. As the Curie point is met and exceeded the structure
becomes symmetric therefore it begins to cancel out the opposing charges and the sample loses
its net polarization. The thermal agitation also works to destroy the net alignment of the unit cell
and the polarization is reduced to zero. At the resonant frequencies, the applied electric field is in
phase with the mechanical deformation of the sample, similar to constructive interference. While
6
at the antiresonant frequencies, the mechanical deformation of the sample is out of phase and
they begin to cancel one another out in a similar manner to destructive interference.
1.3 Surface Charge Density and Polarization

Consider a dipole, where two equal in magnitude but opposite charges are a distance
away but close enough to exert an effect onto the other. The dipole moment of this system obeys
the equation where is the electric dipole moment, q is the charge measured in Coulombs, and d
is the separation distance of the particles.
(1.12)
Figure 1.3: Equal in magnitude but opposite in charge particles separated by distance, d forming
a dipole.
With a dipole or system of dipoles there exists an associated polarization, P given in units of
. The equation that defines the polarization as a function of the net vector dipole moment
2
, the density of the dipoles in units of 3 , is shown below.
= =
V
(1.13)
If there exists a system consisting of parallel plates with a material between the plates that is
polarized homogenously and making the assumption that the dipoles are all of the duplicate
direction, then there exists a zero charge density at small sample volumes due to the symmetrical
nature of the positive and negative charges cancelling one another out. The zero charge density is
7
not consistent through though, if the surface is checked the occurrence of uncompensated
charges caused by the thickness separation of the dielectric material results in an overall surface
polarization charge that can be characterized by the equation below which shows the derivation
is the polarization, v
of the overall bulk polarization charge to the surface polarization charge,
is the number of charged particles, is the electric dipole moment, V is the volume, s is the
number of charges on the surface, Vs is the surface volume, d is the thickness, q is the
fundamental unit of charge, and A is the surface area [16].

=
=
=
=
(1.14)
Figure 1.4: A charged dielectric sample with an electric field applied showing the
formation of dipoles which cancel out in the bulk of the sample but results in an overall
polarization surface charge on either side of the sample.
When placed in an electric field, a dielectric will form a charge over an area at the surface
as discussed above which is called the dielectric displacement and is given by the equation below
represents the dielectric displacement, and 0 represent the relative and free space
where
represents the applied electric field.
dielectric permittivity respectively, and
= 0
(1.15)
0 is the free space dielectric displacement and

This equation is also shown in the form below,
is the material polarization.

as above
=
0 + = 0 +
(1.16)
Furthermore the equation can also be given in the empirical form where we introduce a new
variable , which is defined as the dielectric susceptibility.
= 0
(1.17)
If equation (1.17) is substituted into equation (1.16) then compared to equation (1.15) then the
dielectric permittivity can be can be derived in terms of the susceptibility as the equation below.
= 1 +
(1.18)
This specific equation has a stipulation on it though, it is only valid and true for the case when
the polarization is parallel to the electric field and this applies to isotropic materials only. For all
other cases when there is not a parallel relation between polarization and electric field the
permittivity and susceptibility are given as tensors [8].
The mechanism of polarization in a material is the result of the presence of permanent or
induced dipoles throughout the medium by displacing negative and positive charges through an
external electric field. There are multiple ways about which this polarization can come about.
There is an equation shown below that can sum all the different forms of polarization that
contribute to the total polarization of a material. is what is defined as the total polarization, and
the four terms that are summated to give the total are given as , , , and which
represent the electronic, atomic or ionic, orientational, and space charge polarizations
respectively.
9
=+ ++
(1.19)
The electronic polarization, comes from the displacement or translation of the

electron cloud that is negatively charged respective to the positively charged nucleus of the atom
by the applied electric field. Figure 1.5 displays the effect of electronic polarization in an atom,
the application of an electric field causes the centers of both the negative and positive charges to
dislocate from the centers of symmetry as is the original case with no electric field applied.
Figure 1.5: An atom with the electron cloud surrounding the nucleus with positive and
negative centers coinciding, but when the electric field is applied the centers are shifted and a
dipole is the result.
Atomic or Ionic polarization occurs in dielectrics with ionic bonding under the effect of
an external electric field. The electric field causes a dislocation of the negative and positive ions
from their original position and the charges will move in opposing directions. This movement
results in an overall dipole moment in the sample. In ionic crystals, the local field caused by the
shifting ions can cause a contribution to the electronic polarization by the shifting of the electron
cloud with respect to the nucleus [7]. Figure 1.6 below demonstrates the effect the electric field
has on the ions resulting in the ionic polarization.
10
Figure 1.6: The dielectric lattice is shown left and right shows when an electric field is
applied to the lattice of ions that causes them to shift causing the ionic polarization.
The electron cloud displacement and vibrations of the lattice structure are main components of
the ionic and electronic polarizations, the force of reestablishment opposing displacement is
mostly unaffected by temperature and therefore these two types of polarization are relatively
temperature independent [11].
In materials with permanent built in dipoles, such as in water the net dipole moment
under normal conditions is zero because of the randomly distributed orientations throughout the
material. Under the influence of an externally applied electric field, the dipoles will begin to
reorient themselves in alignment with the electric field lines because of the torque exerted on
them by the respective field. The figure below demonstrates this transition from equilibrium zero
dipole moment condition to non-zero dipole moment condition experienced under the application
of an electric field.
Figure 1.7: Material in equilibrium with normally distributed dipoles shown at left, at right the
reoriented dipoles under the electric field are shown resulting in induced polarization.
11
Space charge polarization is caused by charge carriers, free and mobile charges that can
move through the dielectric. Their movement can lead to certain concentrations and a nonhomogenous distribution of the charge density. These charges can be impeded or trapped at
dielectric or electrode boundaries resulting in a developed space charge thereby causing a field
distortion at the site of concentration and the dielectric constant will be affected. Under zero
electric field this effect is fairly randomly distributed and the average effect is negligible, but
under an electric the positive charge carriers orient with respect to the negative charge carriers in
the field direction.
Figure 1.8: At left space charge polarization under no electric field is shown, at right the space
charge polarization under an electric field is shown displaying the net overall charge distribution
being disturbed and the resulting dipole that is induced.
All of these polarizations can add together to form an overall charge profile on the
surface and at the piezoresonant state an alternating voltage at the resonant frequency will be
driven into the sample. This electric field will cause its own polarization in the material, but at
the resonant state the impedance of the sample will be at a minimum. How this change in
impedance will affect the polarization and therefore the charges on the surface of the material
will be observed.
The resonant states of piezoelectrics and the surface charge can be linked by examining
how charges exist in different materials. In conductors, free charges can move throughout the
structure freely and will move to equalize in the presence of an electric field. Dielectrics do not
have free charges innately, but they can be brought in or introduced. Dielectrics have bound
12
charges which cannot freely move throughout the material, but are able to shift in the presence of
an electric field which in turn results in a polarization that causes a new electric field. Both the
free charges and bound charges contribute to the created electric field.
In piezoelectric ceramics, above what is known as the Curie temperature, the structure is
cubic and centrosymmetric so the positive and negative charge sites coincide and no net dipole is
formed as shown in the figure 1.9a. Below the Curie temperature, these ceramics exhibit a
tetragonal symmetry and the tetravalent metal ion displaces from the central oxygen plane
causing positive and negative sites to no longer coincide as shown in figure 1.9b. This results in
a built in dipole which can be shifted by an electric field. Groups of locally aligned dipoles are
referred to as Weiss domains which causes a net dipole moment per unit volume and thus a net
polarization which as seen by equation (1.14) can result in the formation of a net surface charge.
Figure 1.9: a) Piezoelectric ceramic above Curie temperature. b) Piezoelectric ceramic below
Curie temperature
This potential relationship between the resonant and antiresonant states and the surface
charge profile will be the focus of the experiment and the main motivations behind the analysis
13
of the data. The potential findings of this correlation can have applications in energy harvesting,
energy conversion, piezoelectric transducers, generators, actuators, a multitude of sensors, and
many others. The experimental setup and design of this thesis will be presented next, giving a
detailed overview of how the data was acquired, what instruments were utilized and what design
choices were made during the course of the experiment.
14
CHAPTER TWO: EXPERIMENTAL SETUP

2.1 Basic Setup
The setup for this experiment was fairly consistent throughout for all the samples that
were measured. The measurements were obtained by the Keithley 2182A Nanovoltmeter and
two probes provided by Keithley for use in high sensitivity voltage measurements. One probe
was anchored at one corner of the PZT sample while the other probe moved to the individual
matrix points to obtain the potential between them. The method by which the samples were
provided the resonant, antiresonant and other various frequencies was via a probe anchored to
the corner opposite the anchored voltage electrode. The signal provided to this probe was
delivered by the Hewlett Packard 33120A Function Waveform Generator.
Below in Figure 2.1, the basic setup is shown. The PZT sample is silver pasted onto the
copper substrate so that the electrical connection is made to the underside of the PZT. The
copper substrate is then connected to ground. At one corner, the anchored electrode is the
positive probe and is permanently electrically connected to that corner. The negative probe is the
free probe that moves from position to position throughout the matrix. At the opposite corner of
the anchored electrode is the AC signal probe which provides the frequency stimulation for the
PZT and that signal is coming from the HP 33120A Function Generator. The matrix used to
section the PZT sample into smaller areas was an 11x11 matrix, the 11 rows are denoted by
alphabetic characters, A-K and the 11 columns are denoted by numbers, 1-11. This gives each
experiment a total number of 121 measurements. The PZT samples and their differences will be
discussed further in the next section.
15
Figure 2.1: A drawing that shows the experimental setup of the potential measurements across
the surface of the PZT sample when driven by an AC signal
2.2 PZT Samples

PZT is a common piezoelectric material which sees application in many transducers and
actuators. The abbreviation PZT comes from the materials it is made of, Lead Zirconate Titanate.
PZT is a ferroelectric ceramic and has the chemical formula PbZr(Ti)O3. It is comprised of two
oxides, Lead Zirconate, PbZrO3 and Lead Titanate, PbTiO3. The first is antiferroelectric, while
the latter is ferroelectric. The ferroelectricity and crystal structure are determined by the
concentrations of these two oxides, such as Titanium heavy PZT, which is defined as a PZT with
lead titanate exceeding 50% becoming ferroelectric at the Curie temperature along with an
alteration in the structure from cubic to tetragonal all the way to 0 Kelvin. A Zirconium heavy
PZT, defined as lead zirconate exceeding 50% will become ferroelectric at the Curie temperature
and the structural alteration is from cubic to rhombohedral. One of the most common
concentration amounts that sees application is 58% Lead Titanate and the remaining 52% Lead
Zirconate [17]. PZT has a perovskite structure which is shown in the figure below.
16
Figure 2.2: Unit cell showing PZTs perovskite structure

Ti or Zr is the body center atom while Pb atoms are on the corners and O is the face centered
atoms. The cubic structure of PZT occurs at temperatures exceeding the Curie point (350C)
[17].
There were multiple PZT samples used to compare and contrast the potential
measurements under different conditions for the same material at similar conditions, resonance,
antiresonance and frequencies below, above, in between and DC. The first sample used was a
typical PZT sample that has an electrode on the top and bottom that is complete and unbroken
across the surface. It was silver pasted onto a copper substrate so that an electrical connection
can be established across the bottom electrode, in the case of these experiments it was used to
ground the bottom electrode. In the figure below, the PZT sample is shown on the copper
substrate with the matrix denotations shown at the side. The matrix is 11x11 meaning that there
are 121 individual measurements per experiment. The alpha-numeric matrix tells which point on
the PZT gave what measurement, the point A-11 is where the anchored electrode is placed and
the point K-1 is the location of the AC signal probe.
17
Figure 2.3: PZT sample with complete electrode and copper substrate with alphanumeric matrix
denotations on the side
This sample was used to give baseline measurements for the experiments to see how the
PZTs surface potential at varying frequencies changed with a complete electrode across the top
and bottom surfaces. This sample was measured to have a d33 coefficient of 437 pC/N, a resonant
frequency of 83.130 KHz and an antiresonant frequency of 100.516 KHz. In the figure below,
the admittance curve for this specific PZT sample is shown at a range of 55-130 KHz.
Figure 2.4: Admittance Curve of the PZT with a complete electrode

18
The second PZT sample used in this experiment is made of the same PZT material, is the
same size and is silver pasted onto the copper substrate in a similar manner to the previous
sample discussed. The difference between this sample and the previous sample is the electrode
on the top surface. This sample has the 11x11 matrix carved into the electrode. This has created
smaller islands of electrodes that are connected electrically only through the PZT. So there are
121 individual electroded areas on the surface of this sample. Below, the PZT with the engraved
matrix is shown.
Figure 2.5: PZT with the engraved matrix on a copper substrate oriented the same way as the
complete electrode sample.
This sample has the matrix carved directly into the electrode and this is done to create a
difference in the samples electrodes to determine the surface potential contribution of the PZT
once isolated from a complete and covered electrode. This sample will be used to determine what
contribution, if any, is a result of the metallization and free carriers of the electrode. The electric
field has to go through the PZT completely whereas the electric field could travel through the
electrode on the top between the two measurement electrodes. This is effectively testing the
contribution of the free charge carriers of the electrode and what effect or difference there exists
19
between the distributions of these two samples. Two noted differences before the experimental
measurements were performed were found in the d33 measurements and the admittance curve.
The d33 measurement for the matrix engraved sample was much lower than the other sample at
302 pC/N. The admittance curve also shows that the engraved sample has a higher resonant and
antiresonant frequency. In the figure below, you will see the admittance curve for this sample.
Figure 2.6: Admittance curve for the engraved matrix PZT sample
The differences in the frequencies vary by about 17.7 KHz and the admittance values vary from
37.565 mS in the first sample and 134.747 S in the engraved sample. The results and analysis
section will discuss what differences were found experimentally between these two samples.
2.3 Keithley 2182A Nanovoltmeter

The Keithley 2182A nanovoltmeter is the primary measurement device utilized in this
experiment. To determine the potential differences between the moving electrode and the
anchored electrode to extremely fine precision and at very low level voltages, the nanovoltmeter
was an ideal choice. At the nanovolt level, line noise can cause a tremendous amount of issues
with measurement accuracy and integrity. The 2182A can reduce this noise by initiating the
20
measurement cycle to the line simultaneously and variations on measurements that start on
differing phases of the cycle are reduced. This results in a large exception to line noise with no
additional filtering or shielding. In the figure below, the front panel and display of the 2182A is
shown with the two channel input.
Figure 2.7: Front panel and display of the Keithley 2182A Nanovoltmeter
This nanovoltmeter is one of the best on the market today, having been optimized for
steady, low noise voltage readings. The low noise measurements are made at very quick speeds,
15 nVp-p at 1 second and 40-50 nVp-p at 60 milliseconds. At a range of 10 mV the resolution of
the 2182A is 1nV and at 100 mV the resolution is 10nV, and both ranges have an input
resistance of greater than 10 Gigaohms. It is for these reasons that the 2182A nanovoltmeter was
chosen for these experimental measurements that require low voltage readings at at high level of
precision.
2.4 Hewlett-Packard 33120A Function Generator
The HP 33120A Function generator was used in this experiment to provide the resonant,
antiresonant and other various AC signals to the PZT samples. The 33120A has a frequency
range, for the sine waveform from 100Hz to 15MHz. All the applicable frequencies for this
21
experiment are containing well within this range, so that is one of the more important reasons
this particular device was chosen. It also has an output voltage range, at 50 ohms of 100mVp-p to
10Vp-p, and this range is acceptable for use in this particular experiment. All the waveforms that
were used for this experiment, excluding DC conditions were sine waves which this function
generator can provide at very stable and steady waveforms of varying frequency and voltages.
Shown below is the front panel and display of this device.
Figure 2.8: HP 33120A front panel and display

2.5 Hewlett-Packard 4194A Impedance Analyzer
The HP 4194A Impedance/Gain-Phase analyzer is a measurement device that can provide
14 different parameters with high resolution and high precision over a large range of frequencies.
Specifically in this experiment, the 4194A was used to obtain the admittance and impedance
curves of the PZT samples so as to determine the various resonant and antiresonant frequencies.
It has a very large frequency range from 100 Hz to 40 MHz which is well within the range of
frequencies that are applicable to the PZT samples that were measured. The first PZT sample
measured was the complete electrode sample. The first lower frequency resonance is referred to
as the planar mode. In the planar mode, the motional change of the sample is parallel to the
electrodes or the top and bottom faces of the sample and is characterized by the d31 coupling
coefficient. In the thickness mode, the motional change of the sample is now perpendicular to the
22
electroded faces and is characterized by the d33 coupling coefficient. The figure below shows the
admittance curve as a function of the frequency for the range of 100 Hz to 1.5 MHz, this displays
all the resonant and antiresonant peaks, even the higher frequency thickness mode peaks.
Figure 2.9: Admittance curve of the complete electrode PZT sample for the frequency range of
100 Hz to 1.5 MHz.
In the next figure, the planar mode of the complete electrode sample is isolated and shown. The
resosnant and antiresonant peaks can be seen clearly.
Figure 2.10: Admittance curve of the complete electrode PZT sample over the frequency range
of 55 kHz to 130 kHz.
23
The next figure displays the thickness mode peaks of the complete electrode PZT.
Figure 2.11: Admittance curve of the complete electrode PZT sample over the frequency range
of 850 kHz to 2 MHz.
The next sample that was tested in the 4194A to obtain the thickness and planar mode
resonant and antiresonant peaks was the engraved matrix PZT sample. The isolated electrode
areas seemed to have the effect of moving the resonant frequencies up in frequency from what
was seen in the complete electrode PZT sample and the admittance values were much less. In the
figure below, the entire range is shown.
Figure 2.12: Admittance curve for the engraved matrix PZT sample over the frequency range of
100 Hz to 1.29 MHz.
24
The next figure isolates the planar mode resonant and antiresonant peaks, which are clear to see
but not as prominent as was seen for the complete electrode sample.
Figure 2.13: Admittance Curve for the engraved matrix PZT sample over the frequency range of
98 kHz to 105 kHz.
The next figure displays the thickness mode peaks of the engraved matrix PZT.
Figure 2.14: Admittance curve for the engraved matrix PZT sample over the frequency range of
990 kHz to 1.2 MHz
As can be seen by analyzing the graphs and comparing the various parameters pertinent
to the experiment, it can be seen that there are differences between these two samples despite
being identical materials, but geometrically they differ in electrodes alone. The table below
25
displays the various parameters of the two samples to show resonant and antiresonant
frequencies at both the planar and thickness modes.
Table 1: Planar and Thickness modes resonant and antiresonant frequencies for PZT samples
Planar Mode
Thickness Mode
PZT Sample
Resonant
Antiresonant
Resonant
Antiresonant
Complete Electrode
83.125 kHz
100.563 kHz
996.625 kHz
1.128 MHz
Engraved Matrix
100.835 kHz
102.375 kHz
1.094 MHz
1.127 MHz
The table shows that while the complete electrode PZT has a lower resonant frequency for both
modes, the difference between the resonant and antiresonant frequencies is much greater when
considering the complete electrode sample compared to the engraved matrix sample and once
again this holds true for both modes.
26
CHAPTER THREE: RESULTS AND ANALYSIS

3.1 Results
This chapter will present, review and discuss the findings of the experiments conducted
for the purpose of this thesis. The samples were measured at varying frequencies around and at
their resonant and antiresonant frequencies. The samples developed potential differences that
varied as a function of the position of the moving probe with respect to the anchored probe.
3.2 Complete Electrode PZT Sample
The sample used for these measurements was the PZT sample with the dimensions being
20 x 20 x 2 mm. The 11 x 11 matrix was overlaid onto this sample. The electrode is complete
and covers the entire top and bottom surface. This provides a low resistance path for the
electrical connection between the probes and thus the potential difference measurements reflect
this. There were nine measurements conducted on this particular sample, 50, 80, 83.125, 91.845,
100.563, 102.625,113, 996.625 kHz and DC at 1 Volt measurements.
3.2.1 50 kHz
The first measurement performed on the complete electrode PZT sample was done at a
frequency much below the resonant frequency, which was 83.125 kHz. This measurement was
performed at 50 kHz. In the figures below, the potential difference is measured from the specific
matrix point to the anchored electrode which is found on the matrix at the point denoted A11,
while the probe providing the AC signal is directly across the sample at the point denoted K1.
The signal provided by the function generator was at 5.5 Vp-p.
27
Figure 3.1: 3D plot displaying the 11x11 matrix on the complete electrode PZT with the bars
representing the potential difference between the probes looking from the anchored probe point
at 50 kHz
representing the potential difference between the probes looking from the point A1 at 50kHz
28
These two plots display a trend of a somewhat convex profile that tends to peak in the very
center of the sample. The lowest voltage value is found at the point denoted A11 where the
anchored electrode is and the highest at the point K1, where the AC probe is located. This
frequency is before the resonance frequency by about 36 kHz so there shouldnt be too much
contribution from the piezoresonance. The specific values for each individual matrix point can
be found in the table for this specific frequency in the Appendix.
3.2.2 80 kHz
This measurement was conducted at 80 kHz, which is just below the resonant frequency.
According to the admittance curve, at this frequency the admittance of the PZT sample is
beginning to increase. It is not as large of an admittance as is seen at the resonant frequency, but
the admittance is a considerable amount larger than the value at 50 kHz. The figures below
display the potential difference between the moving probe and the anchored electrode which is
steady at the matrix point denoted A11, while the AC probe is located at the point K1 and is
provided a sine wave at 80 kHz and 5.5 Vp-p.
29
representing the potential difference between the probes looking from the point A1 at 80kHz.
representing the potential difference between the probes looking from the point A1 at 80kHz.
30
These plots picture a more pronounced convex shape of the potential difference values that tends
to peak towards the center of the sample. The potential difference values are also greater than
those that were measured at the lower 50 kHz frequency. Each individual value for the matrix
can be found in the table for this frequency which is located in the Appendix.
3.2.3 83.125 kHz
This measurement was conducted at this samples resonant frequency, 83.125 kHz. This is
one of the more significant measurements as this will reveal how the potential differences
between the probes distribute themselves throughout the sample at its resonant frequency
potentially revealing a surface charge profile that develops at the piezo resonant state where the
admittance is at a maximum. The figures below show this 11x11 matrix and the voltage
differentials existing between point A11 and all the other matrix points, where the AC signal is
being provided by the probe at point K1 at the resonant frequency and an AC voltage of 5.5 Vp-p.
31
representing the potential difference between the probes looking from the point A11 at 83.125
kHz.
kHz.
32
This frequency is associated with the highest admittance values and conversely, the
lowest impedance values, locally. Once again, the characteristic convex shape that peaks
towards the sample center is present. It is also notable that this frequency provided the highest
potential difference values of all the frequencies measured for this sample, the AC signal
provided was a sine wave with an amplitude of 5.5 Vp-p like all the other frequency
measurements. The complete table of all potential difference values can be found in the
Appendix.
3.2.4 91.845 kHz
The frequency this measurement was conducted at is halfway between the resonant and
antiresonant frequencies. From the admittance curve it can be seen that the admittance value of
this sample at this frequency should be most comparable to the admittance of the sample at 50
kHz. The figures below display the potential difference values as the bars height at the
corresponding point on the 11x11 matrix.
kHz.
33
kHz.
This frequency had a comparable admittance value to the value found at 50 kHz and the potential
difference values were very similar as well. Another noteworthy observation is the particular
distribution of the potential difference values which forms the characteristic convex shape which
has peaking values at the sample center. Again, the AC signal provided was a sine wave with an
amplitude of 5.5 Vp-p. The full 11x11 matrix with all values is available in the Appendix.
3.2.5 100.563 kHz
This measurement was conducted at this samples antiresonant frequency, 100.563 kHz.
This is a more significant measurement as it shows the samples distribution of potential
difference values between the anchored and moving probes at the antiresonant state which is
associated with the lowest admittance values and therefore the highest impedance values. The
figures below will show the potential difference values as the bar height for the individual point
on the 11x11 matrix.
34
kHz.
kHz.
35
This frequency is the point at which the sample has the lowest admittance and as can be seen
from the 3D bar plot, it is also associated with the lowest potential difference values. It can also
be observed that the potential difference distribution forms the particular convex shape that
peaks towards the sample center. It is also noteworthy that the peaks seem more prominent than
measurements at other frequencies; the range of potential difference values is larger for this
frequency than others, but not by a large degree. The AC signal provided was a sine wave with
an amplitude of 5.5 Vp-p. The 11x11 matrix with all potential difference values can be found in
the table in the Appendix.
3.2.6 102.625 kHz
This measurement was conducted at 102.625 kHz. This frequency is just after the
antiresonant frequency and by looking at the admittance curve, there is a large increase in the
admittance as the antiresonant frequency is immediately exceeded, but the increase begins to
taper off only increasing slightly the farther away from the antiresonant frequency you get at
higher frequencies. By observation of the admittance curve, a somewhat comparable admittance
value of the PZT sample for this frequency may possibly be 50 kHz, but the value is still much
lower. The figures below show the potential difference values between the probes as the bar
height and the point at which they rise from being the individual point of the 11x11 matrix.
36
kHz.
kHz.
37
This is the frequency with the second lowest admittance value for the sample and from the 3D
bar plot, the potential difference values are also the second lowest at this frequency. The convex
potential difference distribution is apparent again with peaking values at approximately the
sample center. The AC signal used to provide this frequency was a sine wave with an amplitude
of 5.5 Vp-p. The 11x11 matrix with all potential difference values can be found in the table in the
Appendix.
3.2.7 113 kHz
The frequency this measurement was conducted at is a good distance away from the
antiresonant frequency. Looking at the admittance curve for the PZT sample, at 113 kHz the
most comparable admittance values for another measured frequency would be either 50 kHz or
the frequency between resonance and antiresoanace, 91.845 kHz. In the figures below, the
potential difference values are shown as the bars height and the point from which they rise
corresponds to their location on the 11x11 matrix.
representing the potential difference between the probes looking from the point A11 at 113 kHz.
38
representing the potential difference between the probes looking from the point A1 at 113 kHz.
This frequency had a similar admittance value to the value found at 50 kHz and the potential
difference values between the two frequencies show similarity as well. The values are slightly
lower overall at this frequency, but not by too much. The spread is not as large as some of the
other measurements; the spread is close to that which was seen at the 91.845 kHz frequency.
Despite the spread of the values not being as large, the particular convex shape is still mildly
present with peaking potentials at the sample center. The AC sine wave used to supply this
frequency was at an amplitude of 5.5 Vp-p. The table of all the values for the 11x11 matrix can be
found in the Appendix.
3.2.8 996.625 kHz
This frequency used for this measurement corresponds to the PZT samples thickness
mode resonant frequency. At this mode, the mechanical deformation of the PZT is perpendicular
to the electrode or top and bottom faces. The admittance curve also shows the highest admittance
39
values of all frequencies measured at this frequency. The figures below display the potential
differences as the height of the bar and the point out of which it rises denotes the specific point
on the 11x11 matrix at which it is measured.
kHz.
kHz.
40
representing the potential difference between the probes looking from the profile at 996.625 kHz.
The third figure, figure 3.17 was added so that the potential difference distribution can be seen
from the side as it is not completely apparent from the first two plots. No longer do the potential
values distribute themselves in the particular convex shape with peaking values close to the
center of the sample that was seen at the lower frequencies around the planar resonance values.
The potential difference values appear to have apportioned themselves in almost the opposite
configuration of all the previous frequencies distributions. The lowest potential difference values
are found towards the sample center where the peaks were occurring at the previous frequency
measurements. Also looking at the row numbers, a trend can be discerned among the values, the
numbers towards the middle of the row have the larger differences than the exterior numbers
towards the edge of the sample. This is a trend that can be observed for all the frequencies
measured thus far. The AC signal providing the thickness mode resonant frequency was a sine
wave with the amplitude 5.5 Vp-p. All of the individual potential difference values for this
frequency can be found in the table in the Appendix.
41
3.2.9 DC 1V
The measurement conducted was not done at any AC conditions. This was a DC signal of
1 Volt applied at the same position the AC signal was being applied to, the point on the matrix
denoted K1. This measurement was conducted to discern any potential contribution from the
sample itself and to see what the potential difference distribution looks like for this sample at a
DC condition. The figure below portray the potential difference values as the bar height and the
point from which they rise indicate the position on the 11x11 matrix.
representing the potential difference between the probes looking from the point A11 at 1 Volt.
42
representing the potential difference between the probes looking from the point A1 at 1 Volt.
representing the potential difference between the probes looking from the profile at 1 Volt.
43
The third figure was added to show the profile of the PZT sample as the very slight, approximate
linear trend towards the probe providing the DC voltage at point K1. The trend is not perfect and
there are numerous places that throw off the linearity, but an average linear slop can be observed,
especially when considering the rows towards the sample center. Another notable observation is
that there is almost no indication of the particular convex shape that was repeatedly forming at
the AC measurements. This indicates that the potential difference distribution is being affected
significantly by the AC frequencies and therefore the surface charge density as well. The
potential difference values were lower than all the other AC measurement potential values, but
the DC voltage applied was only 1 Volt while the AC voltage had a 5.5 Vp-p amplitude. For all
the potential differecne values in the 11x11 matrix refer to the table in the Appendix.
3.3 Engraved Matrix PZT
The sample used for these measurements was the PZT sample with the 11x11 matrix
engraved into the sample. This isolates the electrode of each 11x11 square from each other so the
only connection they have is through the PZT sample itself. This raises the electrical resistance
by a very large amount and the potential differences reflect that. So the electrodes simply serve
the purpose of an electrical connection for the moving and anchored probes as the bare PZT
makes the measurements very hard to get a steady reading. Three measurements were conducted
on this sample, the planar mode resonant and antiresonant frequencies and the thickness mode
resonant frequency.
3.3.1 100.835 kHz
This frequency is the engraved PZT samples planar mode resonant frequency. By
comparing the planar mode resonant frequency measurements potential difference distribution of
both the continuous electrode and the engraved electrode, the contribution to the surface charge
44
profile by the piezoelectric effect at resonance can be observed. The admittance is at a maximum
at this point, but this samples admittance is much lower at its resonant state than the complete
electrode sample at its resonant frequency. The figures below show this 11x11 matrix and the
voltage differentials existing between point A11 and all the other matrix points, where the AC
signal is being provided by the probe at point K1 at the resonant frequency and an AC voltage of
5.5 Vp-p.
Figure 3.21: 3D plot displaying the 11x11 matrix on the engraved matrix PZT with the bars
kHz.
45
kHz.
From the plots above, it can be observed that the convex shape that was continuously being
developed on the complete electrode sample at AC conditions is present. The shape is not
particularly identical, but the peaking potential values can be found towards the sample center.
The potential difference values are a substantial amount larger than what was observed for the
previous sample. This can be accounted for by the removal of the electrode which allowed for an
electrical path of very low resistance between the two probes. This samples electrical path is
through the PZT itself which offers a considerably larger electrical resistance, causing the
potential difference to be much greater, except around the point where the anchored probe was
located, A11. As the electrical path between the two probes decreased locally, so did the
potential difference. The AC signal providing the resonant frequency was a sine wave with the
46
amplitude 5.5 Vp-p. All of the individual potential difference values for this frequency can be
found in the table in the Appendix.
3.3.2 102.375 kHz
This measurement was done at the PZT samples antiresonant frequency. This frequency
is associated with the lowest admittance values and the highest impedance values. Compared to
the other sample, the admittance values at this frequency for the engraved matrix sample are not
as low. The difference in admittance between the resonant and antiresonant state for this sample
is small. When compared to the admittance difference of the complete electrode sample, which
differs from 28.4835 S to 37.5646 mS, the engraved sample admittance difference is
exceedingly miniscule, differing from 16.5949 S to 134.747 S. The engraving of the sample
into 121 smaller isolated electroded areas had a considerable effect on the samples frequency
response. The resonant frequency seems to have been affected the most considering both samples
have similar antiresonant admittance values but differ an excessive amount at the resonant
frequency. The figures below show this 11x11 matrix and the voltage differentials existing
between point A11 and all the other matrix points, where the AC signal is being provided by the
probe at point K1 at the antiresonant frequency and an AC voltage of 5.5 Vp-p.
47
kHz.
kHz.
48
The plots above display the potential difference distribution at the antiresonant frequency. The
potentials apportion themselves into the particular convex shape and the highest values are found
towards the center of the sample. The values are much larger than any measurement for the
complete electrode sample, but are lower than the previous frequency measurement at resonance.
This is the same for the complete electrode sample, where antiresonance was associated with the
lowest potential difference values and resonance with the highest. The AC signal providing the
antiresonant frequency was a sine wave with the amplitude 5.5 Vp-p. All of the individual
potential difference values for this frequency can be found in the table in the Appendix
3.3.3 1.094475 MHz
At this frequency, the sample is at its thickness mode resonant frequency. The
mechanical deformation due to the applied AC voltage changes from the planar mode dislocation
and now the change in perpendicular to the electrode faces, or top and bottom faces. This
frequency is also associated with the highest admittance value, even compared to the planar
mode admittances. The figures below show the potential difference values as the bar and their
value as the height while the point they rise from corresponds to the specific point on the 11x11
matrix.
49
MHz.
MHz.
50
representing the potential difference between the probes looking from the profile at 1.094475
MHz.
The third figure, figure 3.25 is additional so the profile can be shown for this frequency as it may
not be completely visible from the first two figures. The particular convex shape that was present
at the previous measurements during the resonance and antiresonance at the planar mode, that
was seen for the previous sample as well, is no longer present. This particular shape is quite
similar to the distribution of the complete electrode sample at thickness mode resonance. The
sample center has some of the lowest potential differences, opposite to what was previously
observed for lower frequencies. This verifies that the potential difference distribution is being
affected by the piezoresonant modes and each mode has its own unique effect as the distribution
for each sample has displayed unique similarities in allocation and at each resonant mode for
each sample. The AC signal providing the thickness mode resonant frequency was a sine wave
with the amplitude 5.5 Vp-p. All of the individual potential difference values for this frequency
can be found in the table in the Appendix.
51
3.4 Analysis
Comparing the planar mode resonant frequency potential difference distributions of both
samples with 2D contour projection maps allows for a clearer analysis of the similarities and
differences between the two unique samples. Shown below are the contour plots of both samples.
Figure 3.28: 2D contour projection plots of the potential difference distributions for the engraved
matrix sample (left) and the complete electrode sample (right) at the planar mode resonant
frequency.
The contour plots at first glance look quite different, but the colors are a contrivance of the
software and are a result of the distribution of values, the most important features of these plots
in relation to each other is the peak values and the gradients. As you can see above the engraved
matrix sample has peaking values around the center and along row D, while the complete
electrode sample has peaking values a little off center, up and to the right. But the largest
similarity appears to be around column 6, where both samples have larger distribution values
along that column. The large values observed on the engraved matrix at row D most likely is a
result of the geometry errors of the engraving. Looking back at figure 2.5, it can be seen that row
52
C is larger than the other rows and a larger area can result in a larger charge forming across it.
This can be seen in all the contour plots of the engraved matrix sample.
Figure 3.29: COMSOL simulation of surface displacement at planar resonant frequency
The simulation result for this frequency shows a certain level of similarity, but not
without differences as well. What can be seen in terms of congruence is the sample center where
some of the largest surface displacement values can be seen, this is what was observed
experimentally with both samples. The nodes that surround the central one are where the
theoretical and measured plots begin to differ. The COMSOL simulation, as seen above, displays
four displacement peaks that are almost as large as the central peak, while experimentally only a
central peak was measured and the values drop off as the edge draws nearer. This disparity may
be due to environmental, experimental and certain geometric errors that were introduced and
interfered with an idealized result. The potential difference values are small and thus are subject
to interference than a larger magnitude measurement would. Also, the PZT sample itself is not
perfect; defects in manufacturing could result in an altered structure from the ideal case as is
simulated in COMSOL.
53
matrix sample (left) and the complete electrode sample (right) at the planar mode antiresonant
frequency.
Once again, the graphs look quite dissimilar, but the colors are a result of the individual
distribution of potential difference values. The contour lines coincide very well at the
antiresonant frequencies. Both samples display peaking values just below and at the center of the
sample. Another unique feature is that both samples have a similar distribution of the peaks, an
almost kidney bean shape, with the engraved matrixs being a bit larger. The similarities do not
end there though; around rows B and C towards the leftmost edge, a small decrease in the
potential differences can be seen. Both samples also display an extension of the peaking values at
and around rows F and G as well as row D, this is a unique similarity that both samples share.
The next comparison will be between the samples at their thickness mode resonant frequencies.
54
Figure 3.31: COMSOL simulation of surface displacement at planar antiresonant frequency

The antiresonant frequency simulation displays a central surface displacement peak with
four smaller magnitude nodes arranged around it. The biggest coincidence between the
simulation and experiment is this central peak that was observed in both samples. It can also be
seen that the central peaks of the measured samples have extensions outward from the peak that
nearly mimic those surrounding nodes of the central surface displacement peak of the theoretical
simulation. Otherwise the dissimilarities are observed by the lack of symmetry seen in the
measured plots that is very noticeable in the simulation. The valleys of surface displacement that
are seen in between the nodes on the COMSOL plot are not present in the measured contour
plots. There are many possible causes for the dissimilarities found between the measured and
simulated plots. The environmental factors can affect measurement results, especially at lower
magnitude measurements. Errors from probes, electrodes and equipment can be at fault as well
as they may introduce noise that was not present or they could cause leaks from faulty insulation
or incorrect contact. There also exists the possibility of sample defects causing losses in
measurement integrity.
55
matrix sample (left) and the complete electrode sample (right) at the thickness mode resonant
frequency.
These two plots above shows the most dissimilarity in color distribution, but this is
inconsequential to the relevant comparisons being made about the potential difference
distributions between the two samples. Both samples display two areas where values climax.
Both areas are off center and in fact it can be seen that some of the lowest values, excluding the
corner where the anchored electrode is located at the sample center. The highest values for both
samples, at the lower rows are found at and around column 6 and row B and C. The area is larger
for the engraved sample and extends farther left. The complete electrode sample is contained in
an area that encompasses about 4 columns and is just slightly lower than the other sample. The
areas at the top of the samples are more dissimilar with the complete electrode samples area
being more centered, smaller and higher up than the engraved matrix sample. The engraved
samples higher value area is lower, larger and shifted slightly to the right in comparison. The
lower values found at the center of these samples have a close resemblance in profile, at the right
of the sample is where the values begin at the center rows but as they are followed across the
sample the values begin to turn upwards towards rows F and H.
56
Figure 3.33: COMSOL simulation of surface displacement at thickness resonant frequency

The simulation at the thickness mode resonant frequency was seen to have the most
significant similarities between the measured and simulated plots. The two peaks seen on the
simulated plot are very close in placement on the sample surface to the measured potential
difference peaks found on the two PZT samples used in the experiment. The lower peak is larger
in area in the simulation which is also the case for both measured samples. The pattern is a
unique one and the coincidence between two experimental samples and the simulated sample
shows a significant verifiable result between all three. This pattern is unique to the thickness
mode resonant frequency and is developed on the sample as a result of the resonance at this
specific mode. The divergence between the measured and simulated plots still exists and the
simulation shows a large point of displacement at the right edge towards the central rows and this
is not observed on either experimental sample. It can also be noted that the valley between the
two peaks that runs through the sample center as seen on the complete electrode plot is
interrupted on the simulation by a medium value displacement linking the two peaks, but this is
observed on the engraved matrix sample. These differences can be the result of many differing
57
errors or interferences, environmental, experimental and material are some possible causes as the
simulation is a completely ideal case with none of these other factors taken into account.
The potential difference magnitude of the samples at various frequencies at and around
the resonant frequencies was found to correlate with admittance values and therefore the
frequency. Through Gausss Law, the relationship between the potential difference distribution
and surface charge density can be seen.
=
=
= 0 ( )
(3.1)
(3.2)
(3.3)
The final equation relates the surface charge density, to the permittivity, 0 and the electric
potential distribution, . This shows the surface charge density is directly related to the distance
derivative of the potential difference distribution. From this relation we can see the surface
charge density is proportional to the potential difference distribution by a factor of the
permittivity. The two samples distributions both show very similar apportionment of the
potential distributions and thereby surface charge densities for similar states of resonance, planar,
thickness and antiresonance as well. The planar mode frequencies, resonance, antireosnance, and
including those right above and below display a unique profile that is convex in shape, where the
higher magnitudes are found near the center of the sample and this was confirmed for both
samples.
The thickness mode measurements displayed a different sort of distribution as the
mechanical deformation of the samples change the dimension and direction of their vibrations.
58
The surface charge density of the samples at the higher frequency resonance display almost an
opposite distribution of the potential difference values with some of the lowest measurements
being located at the sample center. With this unique shape being found for both samples, it is
clear that the thickness mode resonance causes this particular surface charge density to develop.
In a paper by Tsutomu Imai and Masako Tanaka on the prediction of spurious modes and
frequency jumps using surface charge measurements in At-cut quartz resonators it was stated
that the admittance is directly related to the surface charge magnitude because the driving
voltage and the frequency is relatively constant over the range of temperatures [15]. The results
of this thesis show a very similar picture where the potential difference values are at a maximum
at the resonant frequency, which is coupled with the highest admittance values and the lowest
potential difference values are found at the antiresonant states where the lowest admittance
values can be shown. There is still a large amount of discovery and potential research that can be
done on this specific area of piezoelectric materials and the observed data shows a significant
amount of promise for the future.
59
CHAPTER FOUR: CONCLUSION AND FUTURE WORK

The observations found in this experiment show promise for the application in the field of
piezoelectric devices such as transducers, actuators, sensors and other devices that take
advantage of the piezoelectric effect. This thesis sought to fill in the gaps where little research
has been done in the field of piezoelectrics. The surface charge density has been observed in
dielectrics at DC conditions as the accumulation of excess charge can lead to insulator or device
breakdown, premature aging and subsequent early failure. The observation of surface charge
density on piezoelectrics at resonance conditions was not as fully explored.
The observations of this thesis show that there are significant effects on the samples
charge distribution that are a result of the applied resonant frequency and more specifically, the
mode of resonance. Both samples show similar distributions at their planar resonant frequency, a
convex shape with the highest magnitudes at or around the center of the sample. The difference
between planar resonance and antiresonance is magnitude. The admittance value was observed to
have a direct effect on the surface charge density magnitude as well, even frequencies that were
not at resonance or antiresonance seemed to verify this. The thickness mode of resonance was
witnessed to result in its own unique distribution of the surface charge. The pattern that
developed upon the surface was almost the opposite of that of the planar mode. The highest
magnitude values were noticed not at the edges but near them, a few rows from the center and a
few rows from the edge. Some of the lowest magnitude values of the surface charge were seen at
the sample center. This was verified for two samples, one with a complete electrode where much
of the potential difference was through the electrode as the electromagnetic wave went through
the path of least resistance and there was some contribution of the PZT sample. The other sample
with isolated islands where the electrode was acting simply as the electrical contact for the
60
moving probe and anchored probe but the contribution of the measured potential difference was
coming from the PZT itself and not the electrode as the electromagnetic wave was forced to
travel through the sample as the connection between the electroded islands was incomplete. The
two samples demonstrated that the free charge carriers and metallization had minimal or almost
no effect on the distribution as similar distribution profiles for similar frequencies were observed
in both samples. This is a unique finding as it is to be expected that a conductor would have a
uniform potential distribution, but the results of this experiment show that is not true and the
bulk effect is considerable enough to have a measureable difference.
The COMSOL simulations showed a certain amount of similarity between the potential
difference distribution and the surface displacement distribution. For the planar modes, the
central peak was observed for all measured figures and was displayed in an ideal case with the
simulation. There were areas of divergence between the experimental and theoretical as well and
extra nodes of displacement were seen in the simulations that were not present in the measured
data. The thickness mode resonant frequency showed significant comparisons in the
experimental and measured plots. The two peaks of potential difference values measured on both
PZT samples were observed in the simulation surface displacement plot giving way to the
proposition that this profile is a result of the thickness mode resonance as it was found for two
dissimilar samples experimentally and for an ideal sample in the COMSOL simulation.
There is still potential for further work and research in this area and on this topic.
Obtaining a higher resolution for the potential difference measurements can help to determine a
better profiling of the samples at the resonant state. Increasing the matrix size will give finer
detail and will give a more uniform distribution of the surface charge density on the sample. This
would require higher resolution equipment and micrometer control for the probing instruments.
61
Resolution would be aided by reduction of any environmental contributions and interference as

well. Developing a general equation to define a mathematical expression that allows for the
surface charge density to expressed as the function of the frequency and geometric parameters of
the sample would be of tremendous benefit to anyone looking to apply this research. Further
experimenting with a sample that has the electrode completely stripped off of its surface will be
beneficial. An attempt was made to conduct experiments on a sample such as this, but the lack of
an electrode on the surface made measurements with the nanovoltmeter much too imprecise and
varying to be considered valid. Finding a method to accurately test this type of sample will shed
further light onto this subject and aid in further results. Looking into the potential difference
values from the two samples, it can be seen that they differ by orders of magnitude. This
difference can be further analyzed by potentially researching the resistivitys and conductivitys
of the PZT and the baked on silver electrode to determine if a similar order of magnitude
difference can be observed between the two materials to account for the potential difference
values of the two samples. Also looking further into the sample and observing the bulk charge
distribution at the resonant states will allow for this research to be fully developed and refined
and would give further insight into how the free carrier and metallization contributions are
minimalized. Finally, applying this research to potential energy harvesting systems as well as
optical and microwave propagation systems would be significant as research into the effect of
piezoelectric resonance on optical transmission has already been demonstrated to be
considerable.
62
APPENDIX
Table 1: Potential difference values on the complete electrode PZT at 50 kHz in microvolts
A
1
2
14.1
14.3
13.8
14.1
13.6
13.3
13.1
13.2
14.3
13.9
13.6
13.9
13.4
13.6
13.6
14
13.7
14.1
13.2
13.5
14.6
14
14.1
14.2
13.1
13.5
14.2
13.9
14
14.9
14.2
13.7
13.9
14
13.3
13.7
13.5
14.3
14.2
13.9
14.9
14.9
13.9
14
5
6
7
8
9
10
11
13.8
14.2
14
13.8
13.6
13.2
12.9
13.4
13.8
13.7
13.9
14
13.5
13.3
13.3
13.6
14
13.1
13
12.9
12.8
13.8
14.1
14.2
14.3
14.1
14
13.6
14.2
14.6
14.1
13.8
13.7
13.4
13.2
14.6
14.5
14.7
14.6
14
13.9
13.5
14.4
14.6
14.7
14.4
14.3
13.7
13.4
15
15.2
15.1
15.2
14.8
14.6
13.9
15
14.8
15
14.7
14.1
13.9
13.7
14.2
14.4
14.6
14.6
14.2
13.6
13.4
13.9
13.9
13.8
13.6
13.6
13.5
13.2
A
1
2
3
13.7
13.5
13.8
13.6
14.6
14.7
14.2
14.2
14.1
13.9
13.8
13.9
14.3
14.8
14.2
14.4
13.6
14.1
14
14
13.6
13.8
14
14
14.9
14.6
14.3
14.4
15.2
14.5
14.3
14.3
13.9
13.5
13.8
13.9
14.2
14
14.3
14.6
14.6
14.4
14.4
15.2
15.5
15.6
15.4
15.4
15.2
15.4
15.5
15.6
15.2
14.8
15.1
15.7
16.2
16.1
14.6
15.4
15.9
16.5
16.3
15.4
15.6
16
15.9
15.8
14.8
15.1
15.6
15.8
15.4
14.5
14.8
15
14.6
14.4
14.2
15
14.9
14.8
14.7
14.2
14.5
14.8
14.5
14.3
13.6
14.2
15.2
15
15.8
15.9
15.7
15.1
14.3
14.5
14.3
13.2
12.8
13.8
13.2
14.7
14.4
14.6
14.2
15.3
14.8
15.5
14.9
15.5
15
14.8
14.3
14.2
13.9
14.2
14
14.2
13.8
5
6
7
8
9
10
11
63
Table 3: Potential difference values on the complete electrode PZT at 83.125 kHz in microvolts
A
15.2
14.8
15.9
15
15.6
15.6
15.7
15.5
15.4
15.8
17
2
3
14.9
15.1
15.5
14.9
15
15
16
16.1
16.1
15.8
16.2
16.5
16
16.1
16.3
15.9
16.2
16.4
16
16.1
16.5
16.3
16.4
16.4
15.9
16.3
16.3
16.1
16.5
16.8
16.4
16.5
16.3
16.2
15.5
16.2
16.7
16.7
16.8
16.8
16.7
16.7
16.6
16.6
16.5
16.3
15.9
16
16.4
16.5
16.7
16.6
16.7
16.8
16.9
17.1
17.2
17.2
16.8
16.8
16.7
17.3
16.7
16.8
16.7
16.3
16
15.5
15.3
14.6
16.3
15.8
15.5
15.3
16.4
15.6
15.4
15.4
16.4
16.3
16.2
15.7
16.7
16.2
15.6
15.4
16.5
16.3
15.7
15.5
17.5
16.9
16.3
15.9
17.3
16.7
16.4
16
16.8
16.4
16.2
16.1
16.7
16.9
15.8
15.7
16.4
16.5
16.3
16
4
5
6
7
8
9
10
11
A
1
2
3
4
13.1
13.5
13.3
13.9
13.5
13.5
13.5
13.8
14.2
14.4
14.9
13.4
13.7
13.8
13.6
13.8
14
13.4
13.5
13.6
14
14
14.1
13.5
13.9
14.1
13.9
14
14.1
13.8
14.2
14.4
14
14.1
14
14.4
14.4
14.2
14.3
14.4
14.1
14.8
14.3
14
8
9
14.1
14.5
14
13.9
13.8
14.3
14.2
14.3
14.2
13.4
13.8
14.5
14.3
14.3
14.4
14.2
14.5
14.2
14
13.9
14.7
14.8
14.6
14.5
13.9
14.2
14.8
14.7
14.6
14.2
14.6
14.8
14.3
14.3
14
14.1
14.2
14.3
14.5
14.2
14.3
14.2
14
13.9
13.7
14.4
14
14.1
13.9
13.8
14
13.9
13.8
13.7
13.8
10
11
13.2
12.8
13.2
13.1
14.1
13.5
13.6
13.6
13.7
13.6
13.8
13.7
13.5
13.5
13.9
13.6
13.8
13.4
13.4
13.2
13.3
13.1
6
7
64
A
10.6
10.1
10.4
10.9
10.7
11
10.6
10.7
10.6
11.2
11.6
2
3
10.8
11.2
11.1
10.2
10.6
11.3
10.6
11.1
11.3
11.3
11.7
11.9
11.2
11.4
11.4
11.4
11.9
12
10.9
11.3
11.5
10.8
11.1
11.2
10.88
10.9
11.1
11
10.9
11.1
11.1
11
10.8
11.2
11.1
11.8
12
11.9
12.5
11.7
11.6
11.4
11.3
11.1
11.5
10.9
11.7
11
11.8
11.7
12.4
12.4
12.3
12.5
12.7
12.2
11.9
12
11.7
11.1
11.5
11.5
11.4
11.2
11.1
11
10.6
9.9
9.5
8.9
10.7
10.3
10
9.3
11.3
10.9
10.6
9.8
12
11.4
10.8
10.4
12.2
11.4
11.2
10.9
11.5
11.4
11.2
11
11.4
11.2
11
10.9
10.9
10.8
10.5
10.6
11
10.5
10.4
10.3
10.8
10.5
10
9.8
10.6
10.5
10
9.9
4
5
6
7
8
9
10
11
A
1
2
3
4
10.4
10.5
10.8
11.4
11.1
12.1
11.9
11.7
11.5
12.2
13
10.5
10.7
10.8
10.7
10.9
11.1
11.4
11.4
11.5
12.1
12.3
12.4
11.3
11.7
12.2
12.2
12.4
12.5
12.1
12.3
12.4
11.8
12
12
11.9
11.8
12.1
12.6
12.3
12
12.6
12.2
12.1
8
9
10.9
11
10.4
10.5
10.1
11.5
11.8
11.7
11.7
11.5
11.8
12.3
12.4
12
11.3
12.6
12.5
12.4
11.7
11.4
12.5
12.6
12.4
12.3
12.1
12.6
12.7
12.4
12.1
12.1
12.7
12.9
13
12.9
13
12.7
12.9
12.8
12.7
11.9
12.2
12.5
12.7
12.4
12.1
11.9
12
11.8
12
11.7
11.6
11.7
11.4
11.3
11.4
10
11
9.5
8.9
10.8
10.6
11.2
11
11.2
11
11.5
11.2
12
12
12.5
11.9
11.8
11.8
11.7
11.5
11.5
11.4
11.1
11
6
7
65
A
13
13
13.3
13.3
12.9
13.3
13
13.2
13.2
13.9
14.1
2
3
13.1
12.9
13.2
12.9
13.1
13.3
13.2
13.4
13.6
13.4
13.4
13.5
1.3
13.4
13.6
13.4
13.5
13.7
13.4
13.6
13.7
13.7
13.8
13.9
13.3
13.9
13.6
13.9
13.8
13.7
13.9
13.5
13.4
13.4
13.3
13.7
13.6
13.8
13.9
14
14.3
14
13.6
13.6
13.5
13.3
13.5
13.4
13.8
13.7
13.7
13.6
13.7
13.5
13.8
13.7
14.1
13.7
14.4
14.5
13.8
14.1
13.7
13.6
13.7
13.4
13.1
12.9
12.7
12.4
13
12.9
12.8
12.7
13.3
13.2
13.3
12.9
13.4
13.2
13.3
13.2
13.3
13.3
13.4
12.8
13.6
13.5
13.6
13.2
13.7
13.8
13.4
13.1
13.9
13.6
13.5
13.6
13.9
13.7
13.6
13.3
13.5
13.3
13.4
13.3
13.3
13
12.9
13
4
5
6
7
8
9
10
11
A
1
2
3
4
14.8
14.6
14.4
14
14.5
14.6
14.3
14.3
14.7
14.8
15.1
14.9
15
15.2
14.3
14.5
14.9
14.5
14.7
15
14.1
14.5
14.8
14.4
14.6
14.5
14.5
14.6
14.7
14.4
14.5
14.6
14.5
14.7
14.9
14.8
14.9
15
14.9
15
15.1
15
15
14.9
8
9
15.3
15.1
14.9
14.9
14.8
15.5
15.5
15.4
15.3
14.7
15.1
15.4
15.5
15
15.1
14.9
15
14.8
15
14.7
14.7
14.6
14.5
14.5
14.4
14.6
14.8
14.9
14.7
14.6
14.8
15
14.9
14.7
14.6
15
15.1
15
14.9
14.7
14.8
15
14.9
14.5
14.4
15.1
15.2
15.1
14.9
14.8
15
14.8
14.7
14.7
14.6
10
11
14.1
13.9
14.4
14.1
14.7
14.5
14.6
14.5
14.5
14.3
14.5
14.2
14.4
14.3
14.8
14.3
14.3
14.4
14.7
14.6
14.3
14.1
6
7
66
Table 9: Potential difference values on the complete electrode PZT at 1 Volt in microvolts
A
8.4
7.9
8.3
8.4
8.6
8.1
8.8
8.8
8.8
9.2
9.4
2
3
8.7
8.6
8.8
8.1
8.2
8.3
7.9
8.1
8.2
8
8.4
8.4
8.7
8.5
8.4
8.6
8.4
8.4
8.9
8.8
8.8
8.8
8.9
8.9
8.9
8.9
9
9
8.9
8.8
9.2
8.8
9
8.9
8.1
8.4
8.4
8.4
8.9
9.1
8.9
9.1
8.7
8.5
8.2
8.4
8.2
8.1
8.5
8.5
8.3
8.4
8.5
8.5
8.9
9
9
9.1
9
9.1
9
8.9
9.1
9
8.4
8.5
8.2
8
8.1
8
8.2
8.1
8.2
8.1
8
7.9
8.6
8.6
8.7
9
8.3
8.4
8.5
8.5
8.4
8.5
8.7
8.9
9
9.1
8.9
8.9
9
9.1
9.1
9.1
8.9
8.9
8.8
8.9
9.1
9
9
9
8.9
8.8
8.8
8.7
4
5
6
7
8
9
10
11
Table 10: Potential difference values on the engraved matrix PZT at 100.835 kHz in volts
A
0.65
0.67
0.678
0.675
0.54
0.471
0.66
0.632
0.702
0.71
0.548
0.632
0.71
0.737
0.701
0.589
0.521
0.478
0.391 0.368
8
0.257 0.178
9
0.156 0.105
10
0.0881 0.0892
11 0.0000118 0.0723
1
2
3
4
5
6
7
0.69
0.739
0.767
0.78
0.792
0.804
0.575
0.589
0.596
0.652
0.691
0.741
0.59
0.601
0.623
0.644
0.682
0.782
0.579
0.602
0.62
0.645
0.672
0.722
0.554
0.574
0.599
0.633
0.664
0.698
0.602
0.622
0.634
0.663
0.678
0.692
0.587
0.59
0.601
0.623
0.638
0.664
0.621
0.582
0.603
0.632
0.654
0.677
0.398
0.264
0.714
0.654
0.65
0.615
0.693
0.621
0.674
0.632
0.678
0.632
0.642
0.63
0.645
0.64
0.631
0.614
0.224
0.234
0.221
0.594
0.564
0.513
0.592
0.54
0.491
0.599
0.584
0.51
0.598
0.543
0.498
0.601
0.565
0.501
0.607
0.58
0.511
0.613
0.587
0.504
0.601
0.579
0.521
67
Table 11: Potential difference values on the engraved matrix PZT at 102.375 kHz in volts
A
0.34
0.35
0.322
0.346
0.34
0.354
0.361
0.354
0.344
0.393
0.458
2
3
0.357
0.373
0.35
0.378
0.359
0.362
0.336
0.35
0.358
0.356
0.37
0.385
0.368
0.373
0.377
0.351
0.365
0.371
0.365
0.368
0.364
0.359
0.356
0.36
0.344
0.352
0.358
0.398
0.362
0.359
0.388
0.363
0.352
0.319
0.371
0.379
0.379
0.383
0.393
0.377
0.364
0.354
0.357
0.348
0.292
0.256
0.3
0.273
0.373
0.313
0.394
0.387
0.396
0.385
0.389
0.374
0.379
0.363
0.368
0.371
0.361
0.354
0.36
0.355
0.342
0.338
0.173 0.212
9
0.104 0.193
10
0.0613 0.1019
11 0.0000111 0.0779
0.278
0.223
0.124
0.121
0.365
0.341
0.312
0.308
0.381
0.365
0.343
0.348
0.368
0.358
0.34
0.343
0.358
0.354
0.342
0.348
0.365
0.352
0.344
0.339
0.35
0.338
0.34
0.333
0.345
0.339
0.342
0.34
0.33
0.333
0.331
0.324
4
5
6
7
8
Table 12: Potential difference values on the engraved matrix PZT at 1.094475 MHz in volts
A
0.368
0.374
0.383
0.388
0.396
0.382
0.369
0.382
0.394
0.399
0.405
0.415
0.371
0.388
0.399
0.404
0.412
0.424
0.281 0.403
8
0.147 0.257
9
0.103 0.143
10
0.0734 0.0987
11 0.0000109 0.0887
1
2
3
4
5
6
7
0.369
0.384
0.4
0.397
0.408
0.419
0.367
0.373
0.38
0.392
0.404
0.4
0.357
0.36
0.376
0.369
0.387
0.394
0.364
0.36
0.378
0.375
0.384
0.393
0.37
0.368
0.374
0.38
0.39
0.399
0.378
0.378
0.381
0.384
0.393
0.402
0.398
0.395
0.38
0.381
0.379
0.389
0.421
0.409
0.391
0.38
0.375
0.38
0.411
0.357
0.411
0.387
0.395
0.382
0.385
0.379
0.4
0.402
0.404
0.391
0.394
0.401
0.392
0.382
0.383
0.377
0.301
0.291
0.282
0.355
0.354
0.357
0.368
0.359
0.356
0.362
0.365
0.352
0.387
0.374
0.376
0.393
0.383
0.37
0.389
0.391
0.377
0.382
0.379
0.368
0.371
0.366
0.359
68
Matlab code for calculating surface charge distribution from potential difference matrices using
the equation derived from Gausss Law
CE_83125=xlsread('PZT_CE_83.125k.xlsx');
EM_100835=xlsread('PZT_EM_100.835k.xlsx');
EM_102375=xlsread('PZT_EM_102.375k.xlsx');
EM_1094475=xlsread('PZT_EM_1.094475M.xlsx');
Eo=8.85e-12;
Er=3400;
[m n] = size(EM_1094475);
n = m;
Dist = zeros(m, n);
Surf = zeros(m, n);
for i = m : -1 : 1
for j = n : -1 :1
Dist(i, j) = sqrt((1.818182e-3*i)^ 2 + (1.818182e-3*j) ^ 2);
end
end
Dist = flipud(Dist);
for i = 1 : m
for j = 1 : n
Surf(i, j) = Eo*Er*(EM_1094475(i, j)/Dist(i, j));
end
end
69
REFERENCES
[1] Zhou, S., and G. Zhang. "Approximate analytical expressions for electrical potential
distribution and surface charge density/surface potential relationship for planar, cylindrical, and
spherical entities immersed in a general electrolyte solution." Colloids and Surfaces A:
Physicochemical and Engineering Aspects 385.1 (2011): 28-39.
[2] Prakash, G. Ravi, et al. "Study of Effect on Resonance Frequency of Piezoelectric Unimorph
Cantilever for Energy Harvesting." sspp 2.3: 4.
[3] Zhu, Shining, Bei Jiang, and Wenwu Cao. "Characterization of piezoelectric materials using
ultrasonic and resonant techniques." Medical Imaging'98. International Society for Optics and
Photonics, 1998.
[4] Miclea, C., et al. "Effect of temperature on the main piezoelectric parameters of a soft PZT
ceramic." Romanian Journal of Information Science and Technology 10.3 (2007): 243-250.
[5] Jordan, T. L., and Zoubeida Ounaies. Piezoelectric ceramics characterization. No. ICASE2001-28. INSTITUTE FOR COMPUTER APPLICATIONS IN SCIENCE AND
ENGINEERING HAMPTON VA, 2001.
[6] Rosenkrantz, Etai, and Shlomi Arnon. "Resonance frequencies of electrically charged
nanoparticles." IEEE Photonics Journal 3.1 (2011): 82-88.
[7] Kholkin, A. L., N. A. Pertsev, and A. V. Goltsev. "Piezoelectricity and crystal
symmetry." Piezoelectric and Acoustic Materials for Transducer Applications. Springer US,
2008. 17-38.
[8] Dayalu, Anand Theerthan Ramanatha. Effect of electric and magnetic stresses on
ferroelectric single crystals and ceramics. Diss. Universit Sciences et Technologies-Bordeaux I,
2012.
[9] Uchino, Kenji. Introduction to piezoelectric actuators and transducers. PENNSYLVANIA
STATE UNIV UNIVERSITY PARK, 2003.
[10] Newnham, Robert E. Properties of materials: anisotropy, symmetry, structure. Oxford
University Press on Demand, 2005.
[11] Kao, Kwan Chi. Dielectric phenomena in solids. Academic press, 2004.
[12] Takada, T., et al. "Comparison between the PEA method and the PWP method for space
charge measurement in solid dielectrics." IEEE transactions on dielectrics and electrical
insulation 5.6 (1998): 944-951.
70
[13] Takada, Tatsuo. "Acoustic and optical methods for measuring electric charge distributions
in dielectrics." Electrical Insulation and Dielectric Phenomena, 1999 Annual Report Conference
on. IEEE, 1999.
[14] Li, Jixiao, et al. "A combined system of piezo-PWP/PEA methods for measuring space
charge distribution in solid dielectrics." Electrets, 1999. ISE 10. Proceedings. 10th International
Symposium on. IEEE, 1999.
[15] Imai, Tsutomu, Masako Tanaka, and Yook-Kong Yong. "Surface charge
measurement/calculations for the prediction of spurious modes and frequency jumps in AT-cut
quartz resonators." Frequency Control Symposium and PDA Exhibition, 2001. Proceedings of
the 2001 IEEE International. IEEE, 2001.
[16] Kasap, Safa, and Peter Capper, eds. Springer handbook of electronic and photonic
materials. Springer Science & Business Media, 2007.
[17] M. Vijay, Piezoelectric Materials and Devices, CRC Press, 2012.
[18] R. Guo, H. B. Liu, G. Reyes, W. Jamieson, and A. Bhalla, "Piezoelectric Resonance
Enhanced Electrooptic Transmission in PZN-8PT Single Crystal," in Photonic Fiber and Crystal
Devices: Advances in Materials and Innovations in Device Applications II. vol. 7056, SPIE-Int
Soc Optical Engineering, 2008, pp. 705616-1-7.
71
VITA
Chance Rabun is from Atlanta, GA. He studied Mathematics at Georgia Perimeter
College and earned an Associate of Arts in Mathematics. After learning to become an
Electronics Technician in the Navy, he attended Old Dominion University where he earned a
Bachelors degree in Electrical Engineering and graduated Cum Laude. He went on to attend The
University of Texas at San Antonio where he earned a Masters degree in Electrical Engineering.
He plans to work in the engineering industry while teaching Physics and Engineering classes part
time at San Diego City College and someday attend a Ph. D. program.
72

Surface Charge Distribution of Piezoelectrics at Thickness and Planar Piezoresonance

Transféré par

Informations du document

Copyright

Formats disponibles

Partager ce document

Partager ou intégrer le document

Options de partage

Avez-vous trouvé ce document utile ?

Ce contenu est-il inapproprié ?

Droits d'auteur :

Formats disponibles

Surface Charge Distribution of Piezoelectrics at Thickness and Planar Piezoresonance

Transféré par

Droits d'auteur :

Formats disponibles

SURFACE CHARGE DISTRIBUTION OF PIEZOLELECTRICS AT

THICKNESS AND PLANAR PIEZORESONANCE

APPROVED BY SUPERVISING COMMITTEE:

SURFACE CHARGE DISTRIBUTION OF PIEZOELECTRICS AT

CHANCE RABUN, M.S.E.E.

THE UNIVERSITY OF TEXAS AT SAN ANTONIO

SURFACE CHARGE DISTRIBUTION OF PIEZOELECTRICS

Chance Rabun, M.S.E.E.

Supervising Professor: Ruyan Guo, Ph.D.

3.2.6 102.625 kHz ..................................................................................................36

Planar and Thickness mode frequencies for both samples ....................................26

Piezoelectric equivalent circuit ................................................................................5

Piezoelectric mode measurement .............................................................................6

Dipole configuration ................................................................................................7

Charged dielectric ....................................................................................................8

Atom with electron cloud polarization ..................................................................10

Dielectric lattice .....................................................................................................11

Dipole distribution .................................................................................................11

Space charge polarization ......................................................................................12

Piezoelectric ceramic structure around Curie temperature ....................................13

PZT perovskite structure ........................................................................................17

Complete electrode PZT ........................................................................................18

Planar mode admittance curve for complete electrode PZT ..................................18

Engraved matrix PZT .............................................................................................19

Planar mode admittance curve for engraved matrix PZT ......................................20

2182A front panel ..................................................................................................21

3120A front panel ..................................................................................................22

Admittance curve for complete electrode PZT ......................................................23

Planar mode admittance curve for complete electrode PZT ..................................23

Thickness mode admittance curve for complete electrode PZT ............................24

Admittance curve for engraved matrix PZT ..........................................................24

Planar mode admittance curve for engraved matrix PZT ......................................25

Thickness mode admittance curve for engraved matrix PZT ................................25

3D plot for complete electrode PZT at 50 kHz ......................................................28

3D plot for complete electrode PZT at 50 kHz ......................................................28

3D plot for complete electrode PZT at 80 kHz ......................................................30

3D plot for complete electrode PZT at 80 kHz ......................................................30

3D plot for complete electrode PZT at 83.125 kHz ...............................................32

3D plot for complete electrode PZT at 83.125 kHz ...............................................32

3D plot for complete electrode PZT at 91.845 kHz ...............................................33

3D plot for complete electrode PZT at 91.845 kHz ...............................................34

3D plot for complete electrode PZT at 100.563 kHz .............................................35

3D plot for complete electrode PZT at 100.563 kHz .............................................35

3D plot for complete electrode PZT at 102.625 kHz .............................................37

3D plot for complete electrode PZT at 102.625 kHz .............................................37

3D plot for complete electrode PZT at 113 kHz ....................................................38

3D plot for complete electrode PZT at 113 kHz ....................................................39

3D plot for complete electrode PZT at 996.625 kHz .............................................40

3D plot for complete electrode PZT at 996.625 kHz .............................................40

3D plot for complete electrode PZT at 996.625 kHz .............................................41

3D plot for complete electrode PZT at DC 1V ...................................................42

3D plot for complete electrode PZT at DC 1V ...................................................43

3D plot for complete electrode PZT at DC 1V ...................................................43

3D plot for engraved matrix PZT at 100.835 kHz .................................................45

3D plot for engraved matrix PZT at 100.835 kHz .................................................46

3D plot for engraved matrix PZT at 102.375 kHz .................................................48

3D plot for engraved matrix PZT at 102.375 kHz .................................................48

3D plot for engraved matrix PZT at 1.094475 MHz .............................................50

3D plot for engraved matrix PZT at 1.094475 MHz .............................................50

3D plot for engraved matrix PZT at 1.094475 MHz .............................................51

2D contour plots for both samples at planar resonance .........................................52

COMSOL simulation of surface displacement at planar resonance .....................53

2D contour plots for both samples at planar antiresonance ...................................54

COMSOL simulation of surface displacement at planar antiresonance ................55