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Nareen Molleti
I. INTRODUCTION
MOSFETS are of increasing important in semiconductor
applications and VLSI, To predict the performance of the VLSI
circuits, the current-voltage (I-V) characteristics of the semiconductor
device are required. The fabrication of devices is cost related so
Qs=[(2siKTNa)(qs/KT+ni2/Na2.(exp(qs/KT)}]......... (9)
The depletion charge is
Qd = [2si qNa s] (10)
From (10), maximum value of depletion charge Qd is
found by putting s =2B.
The inversion charge is
Qi = Qs - Qd .. (11)
From (3),(5),(7),(8),(9),(10) and (11) the drain current can be
calculated numerically for different values of gate voltages.
However, to avoid complex numerical solutions, one can start
from s = 0 V and go on calculating Qs and p . By putting
these values in (7); the corresponding values of gate voltages
can be found. The corresponding drain currents can be
calculated by the same way using (8) and (11).
III. NUMERICAL MODELING
Drift Diffusion model:
where the integral on the right hand side represents the first
moment of the distribution function.
Hydrodynamic model:
The hydrodynamic model treats the propagation of electrons and/or
holes in a semiconductor device as the flow of a charged
compressible fluid. The model exhibits hot carrier effects missing in
the standard drift-diffusion model. The hydrodynamic description
should be valid for devices with active regions greater than 0.05
microns. The hydrodynamic model is equivalent to the equations of
electro-gas dynamics. The electron gas has a sound speed and the
electron flow may be either subsonic or supersonic. In general, a
shock wave develops at the transition from supersonic flow to
subsonic flow. The hydrodynamic model has been extensively used
to study the n+/n/n+ diode that model the channel of a field effect
transistor. The diode begins with a heavily doped n+ source region,
followed by a lightly doped n channel region, and ends with an n+
drain region.
Conclusion:
From the above plots we can see that for different polysilicon
doping concentration for high gate voltage the analytical
curves differ from the simulated curves; and it is more
prominent for the curves having low polysilicon doping
concentrations. From the plot it is also seen that the threshold
voltage decrease with increase with increase in the doping
which increases the sub-threshold leakage current. The current
curve is different for low concentration because of
approximations. For the polysilicon Doping concentration of
1E19 the characteristics for different channel lengths are
plotted to find when to use drift diffusion and when to use
hydro dynamic model it is seen that for shorter channel
lengths hydrodynamic model is used and for long channel
length drift diffusion model is used.
REFERENCES
[1] Yuan Taur and Tak H. Ning, Fundamentals of Modern VLSI
Devices. New York: Cambridge Univ. Press, 1998, Ch. 2, pp.
58 -82.
[2] Effect of polysilicon depletion on MOSFET I-V characteristics
C.-L. Huang, N. D. Arora, A. I. Nasr and D. A. Bell
ELECTRONICS LETTERS 24th June 1993 Vol. 29 No. 13
[3] Gate Length Dependent Polysilicon Depletion Effects-ChangHoon Choi, P. R. Chidambaram, Rajesh Khamankar, Charles F.
Machala, Zhiping Yu and Robert W. Dutton, IEEEELECTRON
DEVICE LETTERS, Vol. 23, No. 4, April 2002
[4] Semiconductor device simulation by Carl.Gardner
[5]
[6]
[7]
[8]
www.silvaco.com.
http://en.wikipedia.org/wiki/Polysilicon_depletion_effect
Atlas Manula version 2014.
http://nanohub.org/resources/