Data Sheet

SM6002NFP
N-Channel Enhancement Mode MOSFET
Features
Pin Description
SD
60V/80A,
RDS(ON)=9.8m (max.) @ VGS=10V
Reliable and Rugged

Lead Free and Green Devices Available
Top View of TO-220-FP
(RoHS Compliant)
Applications
G
Synchronous Rectification.
Power Management in Inverter Systems.
S
N-Channel MOSFET
Ordering and Marking Information

Package Code
FP : TO-220-FP
Operating Junction Temperature Range
C : -55 to 175 oC
Handling Code
TU : Tube
Assembly Material
G : Halogen and Lead Free Device
SM6002N
Assembly Material
Handling Code
Temperature Range
Package Code
SM6002N FP :
XXXXX - Date Code
SM6002N
XXXXX
Note: SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright Sinopower Semiconductor, Inc.
Rev. A.1 - Apr., 2010
www.sinopowersemi.com
Free Datasheet http://www.datasheet4u.com/
SM6002NFP
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25C Unless Otherwise Noted)

VDSS
Drain-Source Voltage
60
VGSS
Gate-Source Voltage
25
Maximum Junction Temperature
175
TJ
TSTG
Storage Temperature Range
IS
V
C
-55 to 175
Diode Continuous Forward Current
TC =25C
80
TC=25C
300
TC=25C
80*
TC=100C
58
TC=25C
100
TC=100C
50
Mounted on Large Heat Sink

IDP
300s Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RJC
Thermal Resistance-Junction to Case
RJA
Thermal Resistance-Junction to Ambient
62.5
EAS
Avalanche Energy, Single Pulsed (L=0.1mH)
100
A
W
1.5
C/W
mJ
Note* Current limited by bond wire.
Electrical Characteristics
Symbol
(TA = 25C Unless Otherwise Noted)
Parameter
Test Conditions
SM6002NFP
Min.
Typ.
Max.
60
30
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
I GSS
RDS(ON)
VGS=0V, IDS=250A
VDS=48V, V GS=0V
TJ =85C
V
A
Gate Threshold Voltage
VDS=VGS, I DS=250A
Gate Leakage Current
VGS=25V, VDS=0V
100
nA
Drain-Source On-state Resistance
VGS=10V, IDS=40A
9.8
ISD =20A, V GS=0V
0.8
1.3
50
ns
90
nC
Diode Characteristics
VSD a
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge

Rev. A.1 - Apr., 2010
ISD =40A, dlSD /dt=100A/s
SM6002NFP
Electrical Characteristics (Cont.)
Symbol
Parameter
(TA = 25C Unless Otherwise Noted)
Test Conditions
SM6002NFP
Min.
Typ.
Max.
1.3
3000
4200
430
250
17
30
15
27
62
110
32
58
76
106
14
25
Unit
Dynamic Characteristics b
RG
Gate Resistance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,
VDS=30V,
Frequency=1.0MHz
VDD=30V, RL=30,
IDS=1A, V GEN=10V,
RG=6
Turn-off Fall Time
Gate Charge Characteristics

Qg
VGS=0V,VDS=0V,F=1MHz
pF
ns
Total Gate Charge
Qgs
Gate-Source Charge
Q gd
Gate-Drain Charge
VDS=30V, V GS=10V,
IDS=40A
nC
Note a : Pulse test ; pulse width300 s, duty cycle2%.

Note b : Guaranteed by design, not subject to production testing.

Rev. A.1 - Apr., 2010
SM6002NFP
Typical Operating Characteristics
Power Dissipation
Drain Current
90
120
80
100
ID - Drain Current (A)
Ptot - Power (W)
70
80
60
40
60
50
40
30
20
20
10
o
TC=25 C
0
20 40 60 80 100 120 140 160 180 200
TC=25 C,VG=10V
0
20 40 60 80 100 120 140 160 180 200
Tj - Junction Temperature (C)
Safe Operation Area
Thermal Transient Impedance
500
Lim
it
1ms
Rd
s(o
n)
100
Normalized Transient Thermal Resistance
10ms
100ms
10
1s
DC
TC=25 C
0.1
0.01
0.1
10
100 300
VDS - Drain - Source Voltage (V)

Rev. A.1 - Apr., 2010
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
1E-3
1E-4
Mounted on minimum pad

o
RJA :62.5 C/W
1E-3
0.01
0.1
10
100
Square Wave Pulse Duration (sec)
SM6002NFP
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
200
10
180
RDS(ON) - On - Resistance (m)
VGS= 7,8,9,10V
160
140
120
100
80
6V
60
40
20
0
8
VGS=10V
7
5V
0
20
40
60
80
100
120
Gate-Source On Resistance
Gate Threshold Voltage

1.8
30
IDS =250A
IDS=40A
25
Normalized Threshold Voltage
RDS(ON) - On - Resistance (m)
1.6
20
15
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10
VGS - Gate - Source Voltage (V)

Rev. A.1 - Apr., 2010
25 50 75 100 125 150 175
SM6002NFP
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward

200
2.2
VGS = 10V
100
IDS = 40A
1.8
o
IS - Source Current (A)
Normalized On Resistance
2.0
1.6
1.4
1.2
1.0
0.8
0.6
Tj=150 C
10
o
Tj=25 C
0.4
o
0.2
-50 -25
RON@Tj=25 C: 7m
0
25
50
0.1
0.0
75 100 125 150 175
1.2
1.5
Capacitance
Gate Charge
10
4500
VDS=30V
VGS - Gate-source Voltage (V)
4000
C - Capacitance (pF)
0.9
VSD - Source - Drain Voltage (V)
Frequency=1MHz
3500
Ciss
3000
2500
2000
1500
1000
Coss
500
5
8
7
6
5
4
3
2
10
15
20
25
30
35
40

Rev. A.1 - Apr., 2010
IDS=40A
Crss
0
0.6
5000
0.3
10
20
30
40
50
60
70
80
QG - Gate Charge (nC)
SM6002NFP
Avalanche Test Circuit and Waveforms
VDS
tp
VDSX(SUS)
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01
tAV
Avalanche Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
RG
VGS
VDD
10%
VGS
tp
td(on) tr

Rev. A.1 - Apr., 2010
td(off) tf
SM6002NFP
Package Information
TO-220-FP
A
A1
L1
d1
A2
b2
S
Y
M
B
O
L
A
A1
T O -220FP
INCHES
M ILLIMETERS
M IN.
MAX.
M IN.
MAX.
4.20
4.80
0.165
0.189
2.60
3.20
0.102
0.126
A2
2.10
2.90
0.083
0.114
0.50
1.00
0.020
0.039
b2
0.90
1.90
0.035
0.075
0.30
0.80
0.012
0.031
0.319
0.358
0.650
8.10
9.10
d1
14.50
16.50
0.571
d2
12.10
12.90
0.476
0.508
9.70
10.70
0.382
0.421
14.50
0.512
0.570
2.54 BSC
0.100 BSC
13.00
L1
1.60
4.00
0.063
0.157
3.00
3.60
0.118
0.142

Rev. A.1 - Apr., 2010
SM6002NFP
Devices Per Unit
Package Type
Unit
Quantity
TO-220-FP
Tube
50
Classification Profile

Rev. A.1 - Apr., 2010
SM6002NFP
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 C
150 C
60-120 seconds
150 C
200 C
60-120 seconds
3 C/second max.
3C/second max.
183 C
60-150 seconds
217 C
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
Time (tP)** within 5C of the specified

classification temperature (Tc)
20** seconds
30** seconds
Average ramp-down rate (Tp to Tsmax)
6 C/second max.
6 C/second max.
6 minutes max.
8 minutes max.
Preheat & Soak

Temperature min (Tsmin)
Temperature max (Tsmax)
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
(Tsmax to TP)
Liquidous temperature (TL)
Time at liquidous (tL)
Peak
(Tp)*
package
body
Temperature
Time 25C to peak temperature
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process Classification Temperatures (Tc)

3
Package
Volume mm
Thickness
<350
<2.5 mm
235 C
2.5 mm
Volume mm
350
220 C
220 C
220 C
Table 2. Pb-free Process Classification Temperatures (Tc)

Package
Thickness
<1.6 mm
1.6 mm 2.5 mm
2.5 mm
Volume mm
<350
260 C
260 C
250 C
Volume mm
350-2000
260 C
250 C
245 C
Volume mm
>2000
260 C
245 C
245 C
Reliability Test Program

Test item
SOLDERABILITY
HOLT
PCT
TCT
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245C
1000 Hrs, Bias @ 125C
168 Hrs, 100%RH, 2atm, 121C
500 Cycles, -65C~150C
Customer Service
Sinopower Semiconductor, Inc.
7F, No. 6, Dusing 1St Rd., Hsinchu Science Park,
Hsinchu, 30078, Taiwan
TEL: 886-3-5635818
Fax: 886-3-5642050

Rev. A.1 - Apr., 2010
10

Data Sheet

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SM6002NFP

N-Channel Enhancement Mode MOSFET

RDS(ON)=9.8m (max.) @ VGS=10V

Reliable and Rugged

Top View of TO-220-FP

Ordering and Marking Information

XXXXX - Date Code

Free Datasheet http://www.datasheet4u.com/

Common Ratings (TA=25C Unless Otherwise Noted)

Maximum Junction Temperature

Storage Temperature Range

Diode Continuous Forward Current

Mounted on Large Heat Sink

300s Pulse Drain Current Tested

Continuous Drain Current

Maximum Power Dissipation

Thermal Resistance-Junction to Case

Thermal Resistance-Junction to Ambient

Avalanche Energy, Single Pulsed (L=0.1mH)

Note* Current limited by bond wire.

(TA = 25C Unless Otherwise Noted)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Threshold Voltage

Gate Leakage Current

Drain-Source On-state Resistance

ISD =20A, V GS=0V

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Copyright Sinopower Semiconductor, Inc.

ISD =40A, dlSD /dt=100A/s

(TA = 25C Unless Otherwise Noted)

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

Note a : Pulse test ; pulse width300 s, duty cycle2%.

Copyright Sinopower Semiconductor, Inc.

ID - Drain Current (A)

Ptot - Power (W)

20 40 60 80 100 120 140 160 180 200

20 40 60 80 100 120 140 160 180 200

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area

Thermal Transient Impedance

ID - Drain Current (A)

Normalized Transient Thermal Resistance

VDS - Drain - Source Voltage (V)

Copyright Sinopower Semiconductor, Inc.

Mounted on minimum pad

Square Wave Pulse Duration (sec)

ID - Drain Current (A)

RDS(ON) - On - Resistance (m)

ID - Drain Current (A)

VDS - Drain - Source Voltage (V)

Gate Threshold Voltage

Normalized Threshold Voltage

RDS(ON) - On - Resistance (m)

VGS - Gate - Source Voltage (V)