Dsa00768586 PDF

TGA4906-SM
4 Watt Ka-Band Packaged HPA

Key Features
Measured Performance
Frequency Range: 28 - 31 GHz

Psat: 36 dBm
Gain: 23 dB
Return Loss: -12 dB
Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
Package Dimensions: 5 x 5 x 1.19 mm
Primary Applications
Ka-Band VSAT
Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
Psat & P1dB (dBm)
38
37
36
Product Description
35
The TriQuint TGA4906-SM is a compact 4 Watt

High Power Amplifier for Ka-band applications.
The part is designed using TriQuints proven
standard 0.15 um gate Power pHEMT production
process. The TGA4906-SM provides a nominal 36
dBm of output power at an input power level of 14
dBm with a small signal gain of 23 dB.
34
33
32
Psat
31
P1dB
30
24
22
20
18
16
14
12
10
8
6
4
28.5
29
29.5
30
Frequency (GHz)
30.5
31
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
Gain
IRL
ORL
28
28.5
29
29.5
30
30.5
Return Loss (dB)
Gain (dB)
28
The TGA4906-SM is a QFN 5x5 mm surface

mount packaged. It is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals and point
to point radio.
Lead-Free & RoHS compliant.
Evaluation boards are available upon request.
31
Frequency (GHz)
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
May 2008 Rev -
TGA4906-SM
Table I
Absolute Maximum Ratings 1/
Symbol
Vd-Vg
Parameter
Value
Drain to Gate Voltage
11 V
Vd
Drain Voltage
6V
Vg
Gate Voltage Range
Id
Drain Current
Ig
Gate Current Range
Pin
Notes
2/
-5 to 0 V
3.7 A
2/
-15 to 202 mA
Input Continuous Wave Power
26 dBm
2/
1/
These ratings represent the maximum operable values for this device. Stresses beyond those listed
under Absolute Maximum Ratings may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed Pd
(as listed in Thermal Information).
Table II
Recommended Operating Conditions
Symbol
Value
Vd
Drain Voltage
6V
Idq
Drain Current
1.6 A
Drain Current under RF Drive
3.0 A
Id_Drive
Vg
1/
Parameter 1/
Gate Voltage
-0.75 V
See assembly diagram for bias instructions.
2
May 2008 Rev -
TGA4906-SM
Table III
RF Characterization Table
Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical
SYMBOL
PARAMETER
TEST
CONDITIONS
NOMINAL
UNITS
Gain
Small Signal Gain
f = 28 - 31 GHz
23
dB
IRL
Input Return Loss
f = 28 - 31 GHz
-12
dB
ORL
Output Return Loss
f = 28 - 31 GHz
-12
dB
Psat
Saturated Output Power
f = 28 - 31 GHz
36
dBm
Gain Temp Coefficient
f = 28 - 31 GHz
-0.04
dB/0C
3
May 2008 Rev -
TGA4906-SM
Table IV
Power Dissipation and Thermal Properties
Parameter
Test Conditions
Value
Notes
1/ 2/
Maximum Power Dissipation
Tbaseplate = 85 C
Pd = 18.5 W
Tchannel = 150 C
Tm = 1.0E+6 Hrs
Thermal Resistance, jc
Vd = 6 V
Id = 1600 mA
Pd = 9.6 W
Tbaseplate = 85 C
jc = 3.5 (C/W)
Tchannel = 119 C
Tm = 4.1E+7 Hrs
Thermal Resistance, jc
Under RF Drive
Vd = 6 V
Id = 3 A
Pout = 4 W (36 dBm)
Pd = 14 W
Tbaseplate = 85 C
jc = 3.5 (C/W)
Tchannel = 134 C
Tm = 6.4E+6 Hrs
Mounting Temperature
30 Seconds
260 C
Storage Temperature
1/
-65 to 150 C
For a median life of 1E+6 hours, Power Dissipation is limited to

Pd(max) = (150 C Tbase C)/jc.
2/
Channel operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that channel temperatures be maintained at the lowest possible
levels.
3/
Tbase is defined @ package pin # 33 (ground)
Power Dissipated (W)
Power De-rating Curve

20
18
16
14
12
10
8
6
4
2
0
Tm= 1.0E+6 Hrs
-50 -25
25 50 75 100 125 150 175 200

Baseplate Temp (C)
4

May 2008 Rev -
TGA4906-SM
Measured Data
Gain (dB)
30
27
24
21
18
15
12
9
6
3
0
20
22
24
26
28
30
32
34
36
Return Loss (dB)
Frequency (GHz)
0
-3
-6
-9
-12
-15
-18
-21
IRL
-24
-27
-30
ORL
20
22
24
26
28
30
32
34
36
Frequency (GHz)
5
May 2008 Rev -
TGA4906-SM
Measured Data
38
Psat & P1dB (dBm)
37
36
35
34
33
32
Psat
31
P1dB
30
25
26
27
28
29
30
31
32
33
Frequency (GHz)
4.0
Pout @ 30GHz
35
3.5
Gain @ 30GHz
30
PAE @ 30GHz
3.0
25
Id @ 30GHz
2.5
20
2.0
15
1.5
10
1.0
0.5
0.0
-20
-15
-10
-5
10
15
Id (A)
Pout (dBm), Gain (dB),

PAE (%)
40
20
Input Power (dBm)

6
May 2008 Rev -
TGA4906-SM
Measured Data
Gain (dB)
30
28
26
24
22
20
18
16
14
12
10
8
6
- 40 C
+25 C
+75 C
20
22
24
26
28
30
32
34
36
Frequency (GHz)
Psat (dBm)
38
- 40C
37
+ 25C
36
+ 75C
35
34
33
32
31
30
25
26
27
28
29
30
31
32
Frequency (GHz)
7
May 2008 Rev -
TGA4906-SM
Electrical Schematic
Vd_3
top
Vd_2
top
Vd_3
bottom
Vd_2
bottom
Vd_1
top
30
27
14
26
15
TGA4906-SM
RF Input
21
RF Output
11
Vg_1,2,3
Bias Procedures
Bias-up Procedure
Bias-down Procedure
Vg set to -1.5 V
Turn off RF supply
Vd_set to +6 V
Reduce Vg to -1.5V. Ensure Idq ~ 0 mA
Adjust Vg more positive until Idq is 1.6 A.

This will be ~ Vg = -0.75 V
Turn Vd to 0 V
Apply RF signal to input
Turn Vg to 0 V
8
May 2008 Rev -
TGA4906-SM
Package Pinout
Pin #1 DOT
Pin
Description
RF Input
21
RF Output
14, 15, 26, 27, 30
Vd
11
Vg
1, 8, 9, 16, 17, 24, 25,

32, 33
Ground
2, 3, 5, 6, 7, 10, 12, 13,

18, 19, 20, 22, 23, 28,
29, 31
N/C
9
May 2008 Rev -
TGA4906-SM
Mechanical Drawing
Units: millimeters
Pkg x, y, z size tolerance: +/- 0.050
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
10
May 2008 Rev -
TGA4906-SM
Recommended Assembly Board
C1
See detail
tuning on
page 12
8mils
diameter
Copper filled
vias
Board is 8mil thick RO4003 with

0.5oz copper cladding.
Board is soldered on metal block
and adequate heatsinking is required
for 14 W power dissipation.
C2 C3
R1
C4
R2 R3
C5C6
C7
C8 C9
R7 R4 R5 R6
C12
C10 C11
Part
Description
C1, C2, C3,

C10, C11, C12
1 uF Capacitor (0603)
C4, C5, C6,

C7, C8, C9
0.01 uF Capacitor (0402)
R1, R2, R3,

R4, R5, R6
10 ohm Resistor (0402)
R7
22 ohm Resistor (0402)
11
May 2008 Rev -
TGA4906-SM
Recommended Assembly Board (Cont)
Detail of PCB Tuning
147.2
54.6
38.5
10.8
6.6
50 x 57.5
17.5
29 x 23.5
43 x 5
8 x 35
20 x 57.5
5 x 18
All units are in mils
12
May 2008 Rev -
TGA4906-SM
Assembly Notes
Recommended Surface Mount Package Assembly
Proper ESD precautions must be followed while handling packages.
Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry.
TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow
oven vendors recommendations when developing a solder reflow profile. Typical solder reflow profiles
are listed in the table below.
Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot
placement. The volume of solder paste depends on PCB and component layout and should be well
controlled to ensure consistent mechanical and electrical performance.
Clean the assembly with alcohol.
Typical Solder Reflow Profiles

Reflow Profile
SnPb
Pb Free
Ramp-up Rate
3 C/sec
3 C/sec
Activation Time and Temperature
60 120 sec @ 140 160 C
60 180 sec @ 150 200 C
Time above Melting Point
60 150 sec
60 150 sec
Max Peak Temperature
240 C
260 C
Time within 5 C of Peak Temperature
10 20 sec
10 20 sec
Ramp-down Rate
4 6 C/sec
4 6 C/sec
Ordering Information
Part
Package Style
TGA4906-SM
QFN 5x5 Surface Mount
13
May 2008 Rev -

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TGA4906-SM

4 Watt Ka-Band Packaged HPA

Frequency Range: 28 - 31 GHz

Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical

Psat & P1dB (dBm)

The TriQuint TGA4906-SM is a compact 4 Watt

Return Loss (dB)

The TGA4906-SM is a QFN 5x5 mm surface

Drain to Gate Voltage

Gate Voltage Range

Gate Current Range

Input Continuous Wave Power

Drain Current under RF Drive

See assembly diagram for bias instructions.

Small Signal Gain

Input Return Loss

Output Return Loss

Saturated Output Power

Gain Temp Coefficient

Maximum Power Dissipation

For a median life of 1E+6 hours, Power Dissipation is limited to

Tbase is defined @ package pin # 33 (ground)

Power Dissipated (W)

Power De-rating Curve

Tm= 1.0E+6 Hrs

25 50 75 100 125 150 175 200

TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com

Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical

Return Loss (dB)

Pout (dBm), Gain (dB),

Input Power (dBm)

Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical

Turn off RF supply

Reduce Vg to -1.5V. Ensure Idq ~ 0 mA

Adjust Vg more positive until Idq is 1.6 A.

Apply RF signal to input

14, 15, 26, 27, 30

1, 8, 9, 16, 17, 24, 25,

2, 3, 5, 6, 7, 10, 12, 13,

Board is 8mil thick RO4003 with

C1, C2, C3,

C4, C5, C6,

0.01 uF Capacitor (0402)

R1, R2, R3,

10 ohm Resistor (0402)

22 ohm Resistor (0402)

All units are in mils

Typical Solder Reflow Profiles

Activation Time and Temperature

60 120 sec @ 140 160 C

60 180 sec @ 150 200 C

Time above Melting Point

Max Peak Temperature

Time within 5 C of Peak Temperature

QFN 5x5 Surface Mount

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