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MCQsinOtherTwoTerminalDevices|PinoyBIX

MCQs in Other Two-Terminal Devices

ThisistheMultipleChoiceQuestionsinOtherTwoTerminalDevices
fromthebookElectronicDevicesandCircuitTheory10thEditionby
RobertL.Boylestad.IfyouarelookingforareviewerinElectronics
Engineeringthiswilldefinitelyhelp.Icanassureyouthatthiswillbea
greathelpinreviewingthebookinpreparationforyourBoardExam.
Makesuretofamiliarizeeachandeveryquestionstoincreasethe
chanceofpassingtheECEBoardExam.

Online Questions and Answers Topic Outline

MCQsinIntroductiontoOtherTwoTerminalDevices|MCQs
inSchottkyBarrier(HotCarrier)Diodes|MCQsinVaractor
(Varicap0Diodes|MCQsinPowerDiodes|MCQsinTunnel
Diodes|MCQsinPhotodiodes|MCQsinPhotoconductive
Cells|MCQsinIREmitters|MCQsinLiquidCrystalDisplays
(LCD)|MCQsinSolarCells|MCQsinThermistors

Practice Exam Test Questions

Choosetheletterofthebestanswerineachquestions.
1.Whichofthefollowingis(are)diodes?
A.Schottky
B.Varactor
C.Tunnel
D.Alloftheabove

2.Whichofthefollowingmetalsis(are)usedinthefabricationof
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Schottkydiodes?
A.Molybdenum
B.Platinum
C.Tungsten
D.Alloftheabove

3.WhatarethetypicalrangesofreversebiascurrentlevelsISforlow
powerandhighpowerSchottkydiodesatroomtemperature?
A.Picoamperes,nanoamperes
B.Nanoamperes,microamperes

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C.Microamperes,milliamperes

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D.Milliamperes,amperes

4.WhatisthevoltagedropacrossSchottkydiodes?

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A.0Vto0.2V
B.0.7Vto0.8V
C.0.8Vto1.0V
D.1.0Vto1.5V

5.Whatmetal(s)is(are)usedintheconstructionofSchottkydiodes?
A.Molybdenum
B.Platinum
C.Tungsten
D.Silicon
E.Anyoftheabove

6.Fora50Aunit,thePIVoftheSchottkyisabout_____compared
to150Vforthepnjunctionvariety.
A.25
B50
C.75
D.100
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7.Schottkydiodesareveryeffectiveatfrequenciesapproaching
_____.
A.20GHz
B.10MHz
C.100MHz
D.1MHz

8.Thisisanapproximateequivalentcircuitforthe_____diode.

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A.Schottky
B.varicap
C.tunnel

9.WhatistherangeofthevaryingcapacitorCTinvaractordiodes?
A.0pFto5pF
B.2pFto100F
C.2Fto100F
D.2pFto100pF

10.Whichofthefollowingareasis(are)applicationsofvaractor
diodes?
A.FMmodulators
B.Automaticfrequencycontroldevices
C.Adjustablebandpassfilters
D.Alloftheabove

11.Thetuningdiodeisa_____dependent,variable_____.
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A.voltage,resistor
B.current,capacitor
C.voltage,capacitor
D.current,inductor

12.Thisisanequivalentcircuitforthe_____diode.

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A.Schottky
B.varicap

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C.tunnel

13.Thevaricapdiodehasatransitioncapacitancesensitivetothe
appliedreversebiaspotentialthatisamaximumatzerovoltsand
decreases_____withincreasingreversebiaspotentials.
A.logarithmically
B.parabolically
C.exponentially

14.Themajorityofpowerdiodesareconstructedusing_____.
A.molybdenum
B.platinum
C.tungsten
D.silicon

15.Thecurrentcapabilityofpowerdiodescanbeincreasedbyplacing
twoormoreinseries.
A.True
B.False

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16.ThePIVratingofpowerdiodescanbeincreasedbystackingthe
diodesinseries.
A.True
B.False

17.Whichofthefollowingdiodeshasanegativeresistanceregion?
A.Schottky
B.Varactor
C.Tunnel
D.Power

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18.Whichofthefollowingsemiconductormaterialsis(are)usedinthe
manufacturingoftunneldiodes?
A.Germanium

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B.Gallium
C.Bothgermaniumandgalliumarsenide
D.Silicon

19.WhatistheratioIP/IVforgalliumarsenide?
A.1:1
B.5:1
C.10:1
D.20:1

20.WhatisthelimitofpeakcurrentIPintunneldiodes?
A.Afewmicroamperestoseveralhundredamperes
B.Afewmicroamperestoseveralamperes
C.Afewmicroamperestoseveralmilliamperes
D.Afewmicroamperestoseveralhundredmicroamperes

21.Whatisthemaximumpeakvoltagefortunneldiodes?
A.50mV
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B.100mV
C.250mV
D.600mV

22.Inwhichregionistheoperatingpointstableintunneldiodes?
A.Negativeresistance
B.Positiveresistance
C.Bothnegativeandpositiveresistance
D.Neithernegativenorpositiveresistance

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23.Whichofthefollowingdiodesislimitedtothereversebiasregion
initsregionofoperation?

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A.Schottky
B.Tunnel

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C.Photodiode
D.Rectifier

24.Whatistheresponsetimeofcadmiumsulfide(CdS)in
photoconductivecells?
A.100ms
B.50ms
C.25ms
D.10ms

25.Whichofthefollowingareasis(are)anapplicationofinfrared
emittingdiodes?
A.Intrusionalarms
B.Shaftencoders
C.Papertapereaders
D.Alloftheabove

26.Whatisthemaximumtemperaturelimitforliquidcrystaldisplays
(LCDs)?

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A.10C
B.30C
C.60C
D.100C

27.Whatistheresponsetimeoflightemittingdiodes(LEDs)?
A.Lessthan100ns
B.50ms
C.100msto300ms

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D.400ms

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28.WhatistheresponsetimeofLCDs?
A.Lessthan100ns

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B.50ms
C.100msto300ms
D.400ms

29.Whatisthepowerdensityreceivedfromthesunatsealevel?
A.10mW/cm2
B.100mW/cm2
C.500mW/cm2
D.1W/cm2

30.Whichofthefollowingsemiconductormaterialsis(are)usedfor
manufacturingsolarcells?
A.Galliumarsenide
B.Indiumarsenide
C.Cadmiumsulfide
D.Alloftheabove

31.Whattypeoftemperaturecoefficientdothermistorshave?
A.Positive
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B.Negative
C.Eitherpositiveornegative
D.Noneoftheabove

32.Whichofthefollowingmaterialsis(are)usedinthemanufacturing
ofthermistors?
A.Ge
B.Si
C.Amixtureofoxidesofcobalt,nickel,strontium,or
manganese

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D.Alloftheabove

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33.Whatistheresistanceofthermistorsatroomtemperature(20C)?
A.5k

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B.1k
C.100
D.1

34.Whatistheresistanceofthermistorsatboilingtemperature
(100C)?
A.5k
B.1k
C.100
D.1

35.Whatisthetypicallevelofchangeinresistanceperdegreechange
intemperature?
A.1%to2%
B.3%to5%
C.7%to10%
D.10%to25%

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1.Schottkydiodeshave_____.
A.quickresponsetime
B.alowernoisefigure
C.bothquickresponsetimeandalowernoisefigure
D.Noneoftheabove

2.Schottkydiodeconstructionresultsina_____uniformjunction
regionanda_____levelofruggedness.
A.more,high
B.less,high

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C.more,low

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D.less,low

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3.Inbothntypeandptypesiliconmaterials,the_____isthe
majoritycarrierinaSchottkydiode.
A.hole
B.electron
C.proton
C.neutron

4.ThebarrieratthejunctionforaSchottkydiodeis_____thatofthe
pnjunctiondeviceinboththeforwardandreversebiasregions.
A.thesameas
B.morethan
C.lessthan
D.Noneoftheabove

5.ASchottkydiodehas_____levelofcurrentatthesameappliedbias
comparedtothatofthepnjunctionatboththeforwardandreverse
biasregions.
A.alower
B.ahigher
C.thesame
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D.Noneoftheabove

6.ThePIVofSchottkydiodesisusually_____thatofacomparablep
njunctionunit.
A.1/2
B.1/3
C.1/4
D.1/5

7.Varactordiodesare_____.

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A.semiconductordevices

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B.voltagedependent

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C.variablecapacitors
D.Alloftheabove

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8.Invaractordiodes,asthereversebiaspotentialincreases,thewidth
ofthedepletionregion_____,whichinturn_____thetransition
capacitance.
A.increases,increases
B.decreases,reduces
C.increases,reduces
D.decreases,increases

9.ThenormalrangeofreversebiasvoltageVRforvaractordiodesis
limitedtoabout_____.
A.15V
B.20V
C.25V
D.40V

10.Inthereversebiasregionofvaractordiodes,theresistanceRRin
parallelwiththevaryingcapacitoris_____andtheseriesresistanceRS
is_____.
A.verylarge,verysmall
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B.verylarge,verylarge
C.verysmall,verylarge
D.verysmall,verysmall

11.Themajorityofpowerdiodesareconstructedusingsiliconbecause
ofitshigher_____rating(s).
A.current
B.temperature
C.PIV
D.Alloftheabove

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12.Thecurrentcapabilityofpowerdiodescanbeincreasedbyplacing
twoormoreofthediodesin_____,andthePIVratingcanbe

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increasedbystackingthediodesin_____.
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A.parallel,parallel
B.series,parallel
C.parallel,series
D.series,series

13.Inthenegativeresistanceregionoftunneldiodes,astheterminal
voltageincreases,thediodecurrent_____.
A.remainsthesame
B.decreases
C.increases
D.isundefined

14.Thepnjunctionofatunneldiodeisdopedatalevelfrom_____
to_____timesthatofatypicalsemiconductordiode.
A.one,several
B.several,ten
C.morethanten,severalhundred
D.onehundred,severalthousand

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15.Thenegativeresistanceregionoftunneldiodescanbeusedinthe
designof_____.
A.oscillators
B.switchingnetworks
C.pulsegenerators
D.Alloftheabove

16.Thewavelengthisusuallymeasuredin_____.
A.angstromunits
B.micrometers

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C.bothangstromunitsandmicrometers

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D.Noneoftheabove

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17.Inphotodiodes,anincreaseinlightintensity_____thereverse
current.
A.increases
B.decreases
C.maintains
D.Noneoftheabove

18.Gehasa_____darkcurrentanda_____levelofreversecurrent
thansilicon.
A.higher,lower
B.higher,higher
C.lower,higher
D.lower,lower

19.Theresponsetimeforcadmiumselenide(CdSe)is_____.
A.100ms
B.50ms
C.25ms
D.10ms
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20.Adecreaseinillumination_____theresistanceRofa
photoconductivecell.
A.decreases
B.increases
C.maintains
D.Noneoftheabove

21.LCDshave_____powerrequirementthan(as)LEDs.
A.alower
B.ahigher

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C.thesame

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D.Noneoftheabove

22.LCDsarecharacteristically_____LEDs.

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A.thesamespeedas
B.muchslowerthan
C.fasterthan
D.muchfasterthan

23._____is(are)themostwidelyusedmaterial(s)forsolarcells.
A.Selenium
B.Silicon
C.Bothseleniumandsilicon
D.Cadmiumsulfide

24.Ingeneral,silicon_____.
A.hasahigherconversionefficiency
B.hasgreaterstability
C.islesssubjecttofatigue
D.Alloftheabove

25.Typicallevelsofefficiencyforsolarcellsrangefrom_____to
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_____.
A.10%,40%
B.40%,50%
C.50%,75%
D.75%,100%

Check your work.

AnswerinOtherTwoTerminalDevices

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