EOC chapter 1

1. Describe the categories of silicon and germanium as semiconductor devices.

Both this material can become conductor and insulator
Has 4 electron valence
Can allow or suppress electrical current flow
2. Draw the atomic structure of germanium containing 32 electrons. Show the
calculations.

2
2
2
2

3.

x
x
x
x

1^2
2^2
3^2
4^2

=
=
=
=

2
8
18
32

(32)
(30)
(22)
(4)

A covalent bond, also called a molecular bond, is a chemical bond that involves the sharing
of electron pairs between atoms. These electron pairs are known as shared pairs or bonding pairs,
and the stable balance of attractive and repulsive forces between atoms, when they share
electrons, is known as covalent bonding.[1][better source needed] For many molecules, the
sharing of electrons allows each atom to attain the equivalent of a full outer shell, corresponding
to a stable electronic configuration.
There are four method to allow electron freed by covalent bond which is:

Heat
Potential Difference
Temperature rise
Doping Process

4. a) Adding impurities to the intrinsic semiconductor we can change the

conductivity of
the material,this is called doping.

N-type doping
-N-type : pentavalent (atom with 5 valence electrons) impurityatoms are
added
-[Sb(Antimony)+Si].Arsenic phosphorus
-Negative charges (electrons) are generated
-N-type has lots of free electrons
P-type doping

-P-type : trivalent (atom with 3 valence electrons) impurity atoms are

added
-[B(bond)+ Si] . Gallium, Indium
-Positive charges (holes) are generated
-P-type has lots of holes

5. a) Forward biased :

Depletion region become thinner as the holes in the P-type region and
the electrons in
the N-ype region are pushed toward the junction.
With increasing forward-bias voltage (Bias voltage V bias >barrier
voltage V bar)the depletion zone eventually becomes thin enough and
reducing electrical resistance.

b) Reverse biased ;

P-type material connected to the negative terminal while N-type region

is connected to the positive terminal.
The holes in the P-type metarial are pulled away from the junction and
the electrons in the N-type region will also be pulled away from the
junction causing the width of the depletion zone to increase.
Resistance becomes higher and a current cannot paas through.
The increase in resistance of the p-n junction results in the junction as
an insulator

6. Difference between Intrinsic and Extrinsic

INTRINSIC
-Material is chemically very pure
(pure semiconductor)

EXTRINSIC
-An improved intrinsic semiconductor with a small
amount of impurities added by a process known as
doping

-Possesses poor conductivity

-Alters the electrical properties of the

semiconductors and improves its conductivity

7. 2 effect high reverse bias in P-N junction

If the P-N junction are supplied with a very high reverse bias voltage,it will
disturb the stability of covalent bond,the electrons will attracted to positive
potential and become free as a current carrier
When the electric fields increases (with voltage),more and more electrons
are freed from its covalent bonds,these will result a high value reverse
current flow (breakdown occur)
The voltage where the breakdown occurs is called breakdown voltage.
Then,the P-N junction will burn