MSE 630

Homework #3

Chapter 3, Plummer

3.2. A boron-doped crystal pulled by the Czochralski technique is required to have a

resistivity of 10 cm when half the crystal is grown. Assuming that a 100 gm pure
silicon charge is used, how much 0.01 cm boron doped silicon must be added to the
melt? For this crystal, plot resistivity as a function of the fraction of the melt solidified.
Assume k0 = 0.8 and the hole mobility p = 550 cm2 volt-1 sec-1.
Answer:
Using the mobility value given, and

1
we have:
qN A

10 cm NA = 1.14 x 1015 cm-3 and 0.01 cm NA = 1.14 x 1018 cm-3

From Eqn. 3.38, CS CO k O 1 f k O 1 and we want CS = 1.14 x 1015 cm-3 when f = 0.5.
Thus, solving for C0 the initial doping concentration in the melt, we have:
C0

ButC 0

1.14x1015
1 0.50. 2 1.24x1015 cm 3
0.8

I0
# ofimpurities (Doping)(Vol.of0.01cm)

V0 unitvolofmelt
Vol100gmSi

C
Wgtaddedof0.01cmSi = 0 100gm 0.109gm
Doping
The resistivity as a function of distance is plotted below and is given by

1
1 f 1 k 0
0.2
x

11.5cm 1 f
qNA x
qC0 k 0

Resistivity

0.2

0.4

0.6

0.8

FractionSolidifiedf

3.4. A Czochralski crystal is grown with an initial Sb concentration in the melt of 1 x 10 16

cm-3. After 80% of the melt has been used up in pulling the crystal, pure silicon is
added to return the melt to its original volume. Growth is then resumed. What will the
Sb concentration be in the crystal after 50% of the new melt has been consumed by
growth? Assume ko = 0.02 for Sb.
Answer:
After the initial 80% growth, the concentration in the solid is given by Eqn. 3.38 as
CS CO k O 1 f

k O 1

16

1x10

0.021 0.8

0.02 1

14

9.68x10

cm

The liquid concentration at that point is given by

CL

CS
4.84x1016 cm 3
0.02

The volume is now increased by 5X, so the new C L 9.68x1015 cm 3 . After 50% of this
new melt is consumed, the concentration in the solid will be

CS CO k O 1 f k O 1 9.68x1015 0.021 0.50.02 1 3.82x1014 cm 3

3.6. Suppose your company was in the business of producing silicon wafers for the
semiconductor industry by the CZ growth process. Suppose you had to produce the
maximum number of wafers per boule that met a fairly tight resistivity specification.
a). Would you prefer to grow N type or P type crystals? Why?
b). What dopant would you use in growing N-type crystals? What dopant would you
use in growing P type crystals? Explain
Answer:
a). Boron has the segregation coefficient closest to unity of all the dopants. Thus it
producesthemostuniformdopingalongthelengthofaCZcrystal.ThusPtypewouldbe
thenaturalchoice.
b). For P type, the obvious (and only real choice) is boron as explained in part a). For N type
crystals Fig. 3-18 shows that either P or As would be a reasonable choice since their segregation
coefficients are quite close and are better than Sb.
Table 3-2 indicates that P might be slightly preferred over As because its kO value is slightly
closer to 1.
Magnetism

1.

2.

(a)
(b)
(c)
(d)

H = NI/L = 400 x 15A/0.25m = 24k A/m

B = o H = 4 x 10-7 (H/m) * 24 x 103 A/m = 0.03 T
B = o(1+)H = 4 x 10-7 (1+3.14 x 10-4) * 24 x 103 A/m = 0.03017 T
M = H = 3.14 x 10-4 x 24 x 103 = 7.536 A/m

Hall voltage
Given: = 3.8 x 107 (-m)-1
e = 0.0012 m2/V-s
t = 15-mm
I = 25 A
B = 0.6 T
= qen n = /qe = 3.8 x 107/(1.6 x 10-19 x 0.0012) = 1.971 x 1029 m-3
RH = 1/qn = 1/1.6 x 10-19 x 1.1875 x 1029 = 3.16 x 10-11 cm3/C
VH = IBRH/t = 25*5.26 x 10-11* 0.6/.015m = 3.16 x 10-9 V