High-performance devices for a wide range of applications

Foundry technologies
0.18-m CMOS, RF CMOS and SiGe BiCMOS

IBM Microelectronics offers a

Highlights

comprehensive suite of foundry

Range of FET devices, including

Standard Features

multiple Vt options and an

Twin-well CMOS technology on

isolated triple-well NFET

nonepitaxial p- doped substrate

Vast array of passive analog RF

Shallow trench isolation (STI)

devices, including:

Surface-channel field-effect

Low-tolerance resistors with

transistors (FETs)

high and low sheet resistivity

Low-resistance cobalt-silicide n+

Linear varactors with wide

and p+ doped polysilicon and

tuning ranges

diffusions

High-quality factor (Q) copper

Planarized passivation and

and aluminum inductors and

interlevel dielectrics

inductor models

Two to six levels of global metal

High-value, low-tolerance

(copper and aluminum)

capacitors

Wire-bond or C4 solder-bump

Electrically writable e-fuses

terminals

Analog RF-compatible design

tools

Optional Features

IBM and third-party logic library

Range of high-speed and high-

design tools

voltage heterojunction bipolar

products and services for its industrystandard 0.18-m CMOS-based

technology family, which includes
both high-speed analog radio
frequency (RF) CMOS and leadingedge silicon germanium (SiGe)
BiCMOS technologies. Customers
can choose appropriate devices and
design tools to match their application
requirements.
Base technology
The IBM CMOS 7SF advanced
process technology features 0.18-m
lithography. The fine lines and high
densities characterizing this state-ofthe-art silicon process can support
leading-edge microprocessors,
communications and computer dataprocessing applications. CMOS 7SF

transistors (HBTs) using IBM

uses low-resistance copper wiring at

SiGe technology

IBM 0.18-m Technology Highlights

Base Technology
CMOS 7SF

Related Technologies
CMOS 7RF

BiCMOS 7WL

BiCMOS 7HP

Process

Industry-standard
0.18-m CMOS

CMOS 7SF with

passive devices

CMOS 7RF with 60-GHz

bipolar devices

CMOS 7SF with120-GHz

bipolar devices

Wiring

Copper or aluminum

Copper and aluminum

with analog metal

Copper and aluminum

with analog metal

Copper with analog metal

Bipolar devices

N/A

N/A

3 HBTs, wireless
focus

2 HBTs, high-speed
optical/digital focus

Passive devices

Metal-insulator-metal
(MIM)

Wireless suite and

multiple inductors

Wireless suite and

multiple inductors

Wired suite and one

inductor

Category

all metal levels, enabling high wiring

density with minimal timing delays.
Related technologies
IBM CMOS 7RF is ideal for wireless
applications such as Bluetooth
wireless technologies, local area
networks (LANs), handsets and RF
identification tags. The FET structures,
identical to those used in CMOS 7SF,
support analog RF-compatible models.
This technology offers a wide range
of optional passive features to enable
analog designs. The design kit and
design tools match those available for
BiCMOS 7WL (see below) to streamline
migration of designs from CMOS 7RF

CMOS Specifications (common to 0.18-m technology family)

Lithography

0.18 m

Voltage (VDD)

1.8 V

Power supply options

1.8 V / 2.5 V / 3.3 V

Standard NFET / PFET

Lmin
Leff
Vt
IDsat
Ioff
Tox

0.18 m
0.11 m / 0.14 m
0.43 V / -0.38 V
600 mA / 260 mA
<80 pA/m (at 25C)
3.5 nm

Thick-oxide NFET / PFET

Lmin
Leff
Vt
IDsat
Ioff
Tox

0.4 m
0.29 m
0.64 V / -0.67 V
550 mA / 235 mA
<1 pA/m (at 25C)
7 nm

to BiCMOS 7WL. This technology uses

copper wiring at the first metal level

The IBM BiCMOS 7WL technology is

subcollector, the use of copper wiring

and aluminum wiring at the remaining

best suited to meet todays consumer

at the first metal level and aluminum

metal levels while maintaining identical

wireless needs, including LANs and

wiring at the remaining metal levels and

ground rules with the corresponding

handsets. BiCMOS 7WL uses leading-

other innovative processing techniques

levels in CMOS 7SF.

edge SiGe technology with deep

reduce the product complexity and

trench isolation and a partially self-

processing time compared to standard

aligned bipolar structure. An implanted

CMOS Specifications

CMOS 7SF

CMOS 7RF

BiCMOS 7WL

BiCMOS 7HP

Isolation

STI

STI

STI / DT

STI / DT

Levels of metal

26

47

47

47

Metallization

Cu

Cu (M1), Al (Mx)

Cu (M1), Al (Mx)

Cu

M1 pitch / thickness

0.44 m / 0.31 m

0.44 m / 0.31 m

0.44 m / 0.31 m

0.44 m / 0.31 m

Mx pitch / thickness

0.56 m / 0.31 m

0.56 m / 0.48 m

0.56 m / 0.48 m

0.56 m / 0.31 m

Last metal option 1

0.83 m

2.0 m

2.0 m

4.0 m

Last metal option 2

0.54 m

4.0 m

4.0 m

Last metal option 3

0.31 m
3.0 m
4.0 m

3.0 m
4.0 m

Dual-inductor last metal thickness

FET devices
Standard NFET / PFET
Thick-oxide NFET / PFET
High Vt NFET / PFET
High gain NFET / PFET
Zero Vt NFET
Triple-well NFET
Thick-oxide triple-well NFET

Color key: Blue values denote aluminum; red values denote copper.

BiCMOS products. BiCMOS 7WL offers

inductors, resistors and varactors.

IBM BiCMOS 7HP incorporates

both high-speed and high-breakdown

BiCMOS 7WL FET structures are identical

a high-performance SiGe bipolar

bipolar devices to support speed

to those used in CMOS 7SF. Device

device optimized for high-speed

versus voltage design trade-offs (see

models are optimized for RF and high-

or low-power applications. It is

Bipolar Specifications below).

speed analog applications.

ideally suited to applications in the

Optional passive features include an

40- to 100-GHz frequency space,

unparalleled selection of capacitors,

such as fiberoptic communication

Bipolar Specifications

BiCMOS 7WL

BiCMOS 7HP

Isolation

STI / DT

STI / DT

Subcollector

Implanted

Buried

Emitter

Not self-aligned

Self-aligned

Transistor
Gain (34)
Va
BVceo / BVcbo
Ceb / Ccb
Re
Ft (at Vce = 1 V)
Fmax (at Vce = 1 V)
Ae min (length width)

High-speed
140
155 V
3.3 V / 11 V
5.7 / 1.97 fF/m2
9W
60 GHz
85 GHz
0.72 m 0.24 m

Passive Devices
Capacitors
Single MIM
Dual MIM
Thick-oxide MOS
Fuses

Varactors
Collector-base junction
Hyperabrupt junction
MOS

High-speed
500
90 V
1.8 V / 6.4 V
9.5 / 4.6 fF/m2
2.5 W
120 GHz
100 GHz
0.64 m 0.2 m

High-breakdown
350
120 V
4.25 V / 12.5 V
8.5 / 2.8 fF/m2
45 W
27 GHz
57 GHz
0.64 m 0.2 m

CMOS 7SF

CMOS 7RF

BiCMOS 7WL

BiCMOS 7HP

1.35 fF/m2 / 15% tolerance

2.0 fF/m2 / 10%

4.0 fF/m2 / 10%
7.9 fF/m2 / 10%

1.0 fF/m2 / 15%

7.9 fF/m2 / 10%

2.0 fF/m2 / 10%

4.0 fF/m2 / 10%
7.9 fF/m2 / 10%

Laser

E-fuses

E-fuses

Q = 10
Q = 18
Q = 24

Q = 10
Q = 18
Q = 24

105 W/ / 15%
72 W/ / 10%
270 W/ / 15%
1600 W/ / 20%
61 W/ / 6%

105 W/ / 15%
72 W/ / 10%
270 W/ / 15%
1600 W/ / 20%
61 W/ / 6%

105 W/ / 15%
72 W/ / 10%
260 W/ / 15%
1600 W/ / 25%
142 W/ / 10%
8.1 W/ / 15%

Inductors1
Analog metal spiral
Thick analog metal spiral
Dual-metal spiral parallel
stacked
Resistors
p+ diffusion
n+ diffusion
p+ polysilicon
p- polysilicon
Tantalum nitride on M1
n+ subcollector diffusion

High-breakdown
140
170 V
4.2 V / 9 V
6.6 / 1.75 fF/m2
15 W
45 GHz
73 GHz
0.72 m 0.24 m

105 W/ / 15% tolerance

72 W/ / 10%
260 W/ / 15%

1. All inductor measurements were taken at L = 1 nH and f = 2 GHz.

2.5 fF/m2 / 15%

Q = 18

transceivers and automotive proximity

Copyright IBM Corporation 2003

sensors. This technology has a fully

All Rights Reserved

self-aligned structure, a buried n+

Printed in the United States of America 3-03

doped subcollector and a base profile

The following are trademarks of International

Business Machines Corporation in the United
States, or other countries, or both:
IBM
IBM Logo

optimized for maximum operating

frequencies. High-speed and highbreakdown BiCMOS 7HP transistors
support speed versus voltage design
trade-offs. BiCMOS 7HP design tools
offer analog RF-compatible models for
all the technology features. Like CMOS
7SF, BiCMOS 7HP uses copper wiring at
all metal levels.
For more information
For more information, contact IBM at
foundry@us.ibm.com

Bluetooth is a trademark owned by Bluetooth SIG,

Inc., and is used by IBM under license.
Other company, product and service names
may be trademarks or service marks of others.
All information contained in this document is
subject to change without notice. The products
described in this document are NOT intended
for use in applications such as implantation,
life support, or other hazardous uses where
malfunction could result in death, bodily injury
or catastrophic property damage. The information contained in this document does not affect
or change IBM product specifications or warranties. Nothing in this document shall operate
as an express or implied license or indemnity
under the intellectual property rights of IBM or
third parties. All information contained in this
document was obtained in specific environments, and is presented as an illustration. The
results obtained in other operating environments
may vary.
THE INFORMATION CONTAINED IN THIS
DOCUMENT IS PROVIDED ON AN AS IS
BASIS. In no event will IBM be liable for damages arising directly or indirectly from any use of
the information contained in this document.
IBM Microelectronics Division
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Hopewell Junction, NY 12533-6351
The IBM home page can be found at ibm.com
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can be found at ibm.com /chips
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