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TIP125/TIP126/TIP127

PNP Epitaxial Darlington Transistor


Medium Power Linear Switching Applications
Complementary to TIP120/121/122

Equivalent Circuit
C

TO-220

R1

1.Base

2.Collector

Absolute Maximum Ratings*


Symbol
VCBO

VCEO

3.Emitter

R1 @ 8kW
R2 @ 0.12k W

R2
E

T a = 25C unless otherwise noted

Collector-Base Voltage

Parameter
: TIP125
: TIP126
: TIP127

Collector-Emitter Voltage : TIP125


: TIP126
: TIP127

Ratings
- 60
- 80
- 100

Units
V
V
V

- 60
- 80
- 100

V
V
V

VEBO

Emitter-Base Voltage

-5

IC

Collector Current (DC)

-5

ICP

Collector Current (Pulse)

-8

IB

Base Current (DC)

- 120

mA

PC

Collector Dissipation (Ta=25C)

Collector Dissipation (TC=25C)

65

TJ

Junction Temperature

150

TSTG

Storage Temperature

- 65 ~ 150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2007 Fairchild Semiconductor Corporation


TIP125/TIP126/TIP127 Rev. 1.0.0

www.fairchildsemi.com
1

TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor

October 2008

Symbol
VCEO(sus)

Parameter
Collector-Emitter Sustaining Voltage
: TIP125
: TIP126
: TIP127

ICEO

Collector Cut-off Current

ICBO

Collector Cut-off Current

Test Condition

Min.

IC = -100mA, IB = 0

-60
-80
-120

Typ.

Max.

Units
V
V
V

: TIP125
: TIP126
: TIP127

VCE = -30V, IB = 0
VCE = -40V, IB = 0
VCE = -50V, IB = 0

-2
-2
-2

mA
mA
mA

: TIP125
: TIP126
: TIP127

VCB = -60V, IE = 0
VCB = -80V, IE = 0
VCB = -100V, IE = 0

-1
-1
-1

mA
mA
mA

-2

mA

V
V

IEBO

Emitter Cut-off Current

VBE = -5V, IC = 0

hFE

* DC Current Gain

VCE = -3V, IC = 0.5A


VCE = -3V, IC = -3A

VCE(sat)

* Collector-Emitter Saturation Voltage

IC = -3A, IB = -12mA
IC =-5A, IB=-20mA

-2
-4

VBE(on)

* Base-Emitter On Voltage

VCE = -3V, IC = -3A

-2.5

Cob

Output Capacitance

VCB = -10V, IE = 0, f =
0.1MHz

300

pF

1000
1000

* Pulse Test: Pulse Width300ms, Duty Cycle2%

2007 Fairchild Semiconductor Corporation


TIP125/TIP126/TIP127 Rev. 1.0.0

www.fairchildsemi.com
2

TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor

Electrical Characteristics* Ta=25C unless otherwise noted

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10k

hFE, DC CURRENT GAIN

V CE = 4V

1k

100
-0.1

-1

-10

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

VBE(sat)

VCE (sat)

-0.5
-0.1

IC[A], COLLECTOR CURRENT

-1

-10

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage


Collector-Emitter Saturation Voltage

1000

-10

s
5m

Cob

Cib

s
0m
50 ms
1

100

DC

IC[A], COLLECTOR CURRENT

s
0m
10

f = 0.1MHz

Cob[pF] Cib[pF], CAPACITANCE

IC = 250IB

-1

-0.1
TIP125
TIP126
TIP127

10
-0.1

-1

-10

-100

-0.01

VCB[V], COLLECTOR-BASE VOLTAGE


VEB[V], EMITTER-BASE VOLTAGE

-1

-10

-100

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Output and Input Capacitance


vs. Reverse Voltage

Figure 4. Safe Operating Area

90

PC[W], POWER DISSIPATION

75

60

45

30

15

25

50

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 5. Power Derating

2007 Fairchild Semiconductor Corporation


TIP125/TIP126/TIP127 Rev. 1.0.0

www.fairchildsemi.com
3

TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor

Typical Characteristics

TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor

Mechanical Dimensions

TO220

2007 Fairchild Semiconductor Corporation


TIP125/TIP126/TIP127 Rev. 1.0.0

www.fairchildsemi.com
4

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PRODUCT STATUS DEFINITIONS


Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In Design

This datasheet contains the design specifications for product development.


Specifications may change in any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.

No Identification Needed

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This datasheet contains final specifications. Fairchild Semiconductor reserves


the right to make changes at any time without notice to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31

2008 Fairchild Semiconductor Corporation


TIP125/TIP126/TIP127 Rev. A1

www.fairchildsemi.com
5

TIP125/TIP126/TIP127 PNP Epitaxial Darlington Transistor

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