Data Sheet

APM4550K
Dual Enhancement Mode MOSFET (N- and P-Channel)
Pin Description
Features
N-Channel
30V/7A,
RDS(ON) = 20m (typ.) @ VGS = 10V
RDS(ON) = 30m (typ.) @ VGS = 4.5V
P-Channel
Top View of SOP 8
-30V/-5A,
RDS(ON) = 40m (typ.) @ VGS = -10V
(7) (8)
D1 D1
RDS(ON) = 62m (typ.) @ VGS = -4.5V
Super High Dense Cell Design

Reliable and Rugged
(4)
G2
Lead Free Available (RoHS Compliant)

(2)
G1
Applications
(3)
S2
S1
(1)
Power Management in Notebook Computer,
D2
(5)
Portable Equipment and Battery Powered

N-Channel
Systems
D2
(6)
P-Channel
Ordering and Marking Information

Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150C
Handling Code
TR : Tape & Reel
TU : Tube
Lead Free Code
L : Lead Free Device
APM4550
Lead Free Code
Handling Code
Temp. Range
Package Code
APM4550K :
APM4550
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - May, 2007
www.anpec.com.tw
APM4550K
Absolute Maximum Ratings
Symbol
(TA = 25C unless otherwise noted)
Parameter
N Channel
P Channel
VDSS
Drain-Source Voltage
30
-30
VGSS
Gate-Source Voltage
20
20
-5
ID*
Continuous Drain Current
IDM*
300s Pulsed Drain Current
30
-20
IS*
Diode Continuous Forward Current
2.5
-2
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
PD*
Power Dissipation
VGS=10V
Parameter
A
A
C
-55 to 150
TA=25C
TA=100C
0.8
Thermal Resistance-Junction to Ambient

2
Note: *Surface Mounted on 1in pad area, t 10sec.
Symbol
150
RJA*
Electrical Characteristics
Unit
W
C/W
62.5
APM4550K
Test Condition
Min.
Typ.
Max.
Unit
Static Characteristics
Drain-Source Breakdown
Voltage
BVDSS
VGS=0V, IDS=250A
N-Ch
30
VGS=0V, IDS=-250A
P-Ch
-30
VDS=24V, VGS=0V
Zero Gate Voltage Drain
Current
IDSS
V
1
N-Ch
30
TJ=85C
VDS=-24V, VGS=0V
-1
P-Ch
-30
TJ=85C
VGS(th)
Gate Threshold Voltage
IGSS
RDS(ON)
Gate Leakage Current
Drain-Source On-State
Resistance

Rev. A.1 - May, 2007
VDS=VGS, IDS=250A
N-Ch
1.5
VDS=VGS, IDS=-250A
P-Ch
-1
-1.5
-2
VGS=20V, VDS=0V
N-Ch
100
P-Ch
100
VGS=10V, IDS=7A
N-Ch
20
27.5
VGS=-10V, IDS=-5A
P-Ch
40
50
VGS=4.5V, IDS=5A
N-Ch
30
40
VGS=-4.5V, IDS=-4A
P-Ch
62
80
nA
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APM4550K
Electrical Characteristics (Cont.)
Symbol
Parameter

APM4550K
Test Condition
Min.
Typ.
Max.
Unit
Diode Characteristics
VSD
Diode Forward Voltage
ISD=2.5A, V GS=0V
N-Ch
0.8
1.3
ISD=-2A, V GS=0V
P-Ch
-0.8
-1.3
trr
Reverse Recovery Time
N-Channel
ISD=7A, dlSD/dt=100A/s
N-Ch
P-Ch
13
Q rr
Reverse Recovery
Charge
N-Channel
ISD=-5A, dlSD/dt=100A/s
N-Ch
P-Ch
N-Ch
P-Ch
8.3
N-Channel
VGS=0V,
VDS=15V,
Frequency=1.0MHz
N-Ch
620
P-Ch
590
N-Ch
85
P-Channel
VGS=0V,
VDS=-15V,
Frequency=1.0MHz
P-Ch
95
N-Ch
65
P-Ch
70
N-Ch
11
P-Ch
N-Ch
10
18
P-Ch
12
23
N-Ch
22
41
P-Ch
27
50
N-Ch
P-Ch
13
24
N-Channel
VDS=15V, V GS=10V,
IDS=7A
N-Ch
14
19
P-Ch
11
15
N-Ch
1.4
P-Channel
VDS=-15V, V GS=-10V,
IDS=-5A
P-Ch
1.3
N-Ch
2.6
P-Ch
2.7
Dynamic Characteristics
Gate Resistance
C iss
Input Capacitance
C oss
Output Capacitance
C rss
Reverse Transfer
Capacitance
td(ON)
Turn-on Delay Time
Tr
Turn-on Rise Time
Tf
ns
nC
RG
td(OFF)
VGS=0V,V DS=0V,F=1MHz
N-Channel
VDD=15V, R L=15,
IDS=1A, V GEN=10V,
R G=6
Turn-off Delay Time
P-Channel
VDD=-15V, R L=15,
IDS=-1A, V GEN=-10V,
R G=6
Turn-off Fall Time
Gate Charge Characteristics
pF
ns
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
nC
Notes:
a : Pulse test ; pulse width 300s, duty cycle 2%.
b : Guaranteed by design, not subject to production testing.

Rev. A.1 - May, 2007
www.anpec.com.tw
APM4550K
Typical Characteristics
N-Channel
Drain Current
Power Dissipation
8
2.5
7
2.0
ID - Drain Current (A)
Ptot - Power (W)
6
1.5
1.0
5
4
3
2
0.5
1
o
TA=25 C
0.0
20
TA=25 C,VG=10V
40
60
80 100 120 140 160
40
60
80 100 120 140 160
Tj - Junction Temperature (C)
Safe Operation Area
Thermal Transient Impedance

Normalized Transient Thermal Resistance
Lim
it
10
Rd
s(o
n)
20
100
300s
1ms
10ms
100ms
0.1
1s
DC
TA=25 C
0.01
0.01
0.1
10
Duty = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
1E-3
1E-4
100
VDS - Drain - Source Voltage (V)

Rev. A.1 - May, 2007
Mounted on 1in pad

o
RJA : 62.5 C/W
1E-3
0.01
0.1
10 30
Square Wave Pulse Duration (sec)
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APM4550K
Typical Characteristics (Cont.)
N-Channel
Output Characteristics
30
Drain-Source On Resistance
50
VGS= 4.5,5,6,7,8,9,10V
27
4V
RDS(ON) - On - Resistance (m)
45
24
21
18
15
3.5V
12
9
3V
40
VGS=4.5V
35
30
25
VGS=10V
20
15
10
3
2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
10
15

1.6
30
IDS=250
ID=7A
1.4
Normalized Threshold Voltage
45
25
VDS - Drain-Source Voltage (V)
50
40
35
30
25
20
15
10
20
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10
VGS - Gate - Source Voltage (V)

Rev. A.1 - May, 2007
25
50
75 100 125 150
www.anpec.com.tw
APM4550K
N-Channel
Source-Drain Diode Forward
2.00
30
VGS = 10V
IDS = 7A
10
Tj=150 C
1.50
IS - Source Current (A)
Normalized On Resistance
1.75
1.25
1.00
0.75
0.50
Tj=25 C
1
0.25
o
0.00
-50 -25
RON@Tj=25 C: 20m
0
25
50
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
75 100 125 150
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1000
10
Frequency=1MHz
VDS=15V
900
VGS - Gate - source Voltage (V)
C - Capacitance (pF)
800
700
Ciss
600
500
400
300
200
100
0
Coss
IDS=7A
8
7
6
5
4
3
2
1
Crss
0
10
15
20
25
30
10
12
14
QG - Gate Charge (nC)
VDS - Drain - Source Voltage (V)

Rev. A.1 - May, 2007
www.anpec.com.tw
APM4550K
P-Channel
Power Dissipation
Drain Current
6
2.5
-ID - Drain Current (A)
Ptot - Power (W)
2.0
1.5
1.0
0.5
1
o
0.0
TA=25 C
0
20
40
60
80 100 120 140 160
40
60
80 100 120 140 160
Safe Operation Area
Thermal Transient Impedance

Normalized Transient Thermal Resistance
Rd
s(o
n)
Lim
it
20
300s
1ms
1
10ms
100ms
1s
0.1
DC
TA=25 C
0.01
0.01
50
10
TA=25 C,VG=-10V
0.1
10
Duty = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single Pulse
1E-3
1E-4
100
-VDS - Drain - Source Voltage (V)

Rev. A.1 - May, 2007
Mounted on 1in pad

o
RJA : 62.5 C/W
1E-3
0.01
0.1
10 30
Square Wave Pulse Duration (sec)
www.anpec.com.tw
APM4550K
P-Channel
Output Characteristics
20
90
18
100
VGS=-4.5-5,-6,-7 -8,-9,-10V -4V
16
-3.5V
14
12
10
-3V
8
6
4
-2.5V
80
VGS=-4.5V
70
60
50
VGS=-10V
40
30
20
2
-2V
0
0.0
0.5
1.0
1.5
2.0
2.5
10
3.0
12
16

1.6
ID=-5A
90
20
IDS= -250
1.4
Normalized Threshold Voltage
100
80
70
60
50
40
30
20
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
10
-VGS - Gate - Source Voltage (V)

Rev. A.1 - May, 2007
1.2
25
50
75 100 125 150
www.anpec.com.tw
APM4550K
P-Channel
Source-Drain Diode Forward

20
2.0
VGS = -10V
IDS = -5A
10
1.6
-IS - Source Current (A)
Normalized On Resistance
1.8
1.4
1.2
1.0
0.8
0.6
Tj=150 C
o
Tj=25 C
1
0.4
o
RON@Tj=25 C: 40m
0.2
-50 -25
25
50
75
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
100 125 150
-VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
10
800
Frequency=1MHz
VDS= -15V
9
C - Capacitance (pF)
600
-VGS - Gate - source Voltage (V)
700
Ciss
500
400
300
200
100
0
Coss
Crss
8
7
6
5
4
3
2
1
0
10
15
20
25
30
10
12
QG - Gate Charge (nC)

Rev. A.1 - May, 2007
IDS= -5A
www.anpec.com.tw
APM4550K
Package Information
SOP-8
D
E1
SEE VIEW A
h X 45
0.25
A2
A1
GAUGE PLANE
SEATING PLANE
VIEW A
S
Y
M
B
O
L
SOP-8
MILLIMETERS
MIN.
INCHES
MAX.
MIN.
MAX.
1.75
0.069
0.004
0.25
0.010
A1
0.10
A2
1.25
0.31
0.51
0.012
0.020
0.17
0.25
0.007
0.010
0.049
4.90 BSC
0.193 BSC
6.00 BSC
0.236 BSC
E1
3.90 BSC
0.154 BSC
1.00 BSC
0.050 BSC
0.25
0.50
0.010
0.020
0.40
1.27
0.016
0.050

Rev. A.1 - May, 2007
10
www.anpec.com.tw
APM4550K
Carrier Tape & Reel Dimensions
t
D
Po
P1
Bo
F
W
Ao
D1
Ko
T2
J
C
A
T1
Application
SOP-8
A
3301
B
62 1.5
C
12.75 +
0.1 5
J
2 + 0.5
T1
12.4 +0.2
T2
2 0.2
F
D
D1
Po
P1
Ao
5.5 0.1 1.550.1 1.55+ 0.25 4.0 0.1 2.0 0.1 6.4 0.1
W
12 + 0.3
- 0.1
Bo
5.2 0.1
P
8 0.1
E
1.75 0.1
Ko
t
2.1 0.1 0.30.013
(mm)
Devices Per Reel

Package Type
SOP- 8
Devices Per Reel

2500

Rev. A.1 - May, 2007
11
www.anpec.com.tw
APM4550K
Physical Specifications
Terminal Material
Lead Solderability
Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn

Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)

tp
TP
Critical Zone
T L to T P
Temperature
Ramp-up
TL
tL
Tsmax
Tsmin
Ramp-down
ts
Preheat
25
t 25 C to Peak
Tim e
Classification Reflow Profiles

Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5C of actual
Peak Temperature (tp)
Ramp-down Rate
Time 25C to Peak Temperature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
217C
60-150 seconds
See table 1
See table 2
10-30 seconds
20-40 seconds
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Notes: All temperatures refer to topside of the package. Measured on the body surface.

Rev. A.1 - May, 2007
12
www.anpec.com.tw
APM4550K
Classification Reflow Profiles (Cont.)
Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures
3
Volume mm
350
Package Thickness
Volume mm
<350
<2.5 mm
240 +0/-5C
225 +0/-5C
2.5 mm
225 +0/-5C
225 +0/-5C
Table 2. Pb-free Process Package Classification Reflow Temperatures

3
Package Thickness
Volume mm
<350
Volume mm
350-2000
Volume mm
>2000
<1.6 mm
260 +0C*
260 +0C*
260 +0C*
1.6 mm 2.5 mm
260 +0C*
250 +0C*
245 +0C*
2.5 mm
250 +0C*
245 +0C*
245 +0C*
* Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated
classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL
level.
Reliability Test Program

Test item
SOLDERABILITY
HOLT
PCT
TST
ESD
Latch-Up
Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9
MIL-STD-883D-3015.7
JESD 78
Description
245C, 5 SEC
1000 Hrs Bias @125C
168 Hrs, 100%RH, 121C
-65C~150C, 200 Cycles
VHBM > 2KV, VMM > 200V
10ms, 1tr > 100mA
Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pao Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Rev. A.1 - May, 2007
13
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Data Sheet

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APM4550K

Dual Enhancement Mode MOSFET (N- and P-Channel)

RDS(ON) = 62m (typ.) @ VGS = -4.5V

Super High Dense Cell Design

Lead Free Available (RoHS Compliant)

Power Management in Notebook Computer,

Portable Equipment and Battery Powered

Ordering and Marking Information

XXXXX - Date Code

(TA = 25C unless otherwise noted)

Continuous Drain Current

300s Pulsed Drain Current

Diode Continuous Forward Current

Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance-Junction to Ambient

(TA = 25C unless otherwise noted)

Gate Threshold Voltage

Gate Leakage Current

Copyright ANPEC Electronics Corp.

(TA = 25C unless otherwise noted)

Diode Forward Voltage

Reverse Recovery Time

Turn-on Delay Time

Turn-on Rise Time

Turn-off Delay Time

Turn-off Fall Time

Gate Charge Characteristics

Total Gate Charge

Copyright ANPEC Electronics Corp.

ID - Drain Current (A)

Ptot - Power (W)

80 100 120 140 160

80 100 120 140 160

Tj - Junction Temperature (C)

Safe Operation Area

Thermal Transient Impedance

ID - Drain Current (A)

Tj - Junction Temperature (C)

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Mounted on 1in pad

Square Wave Pulse Duration (sec)

RDS(ON) - On - Resistance (m)

ID - Drain Current (A)

ID - Drain Current (A)

Gate Threshold Voltage

Normalized Threshold Voltage

RDS(ON) - On - Resistance (m)

VDS - Drain-Source Voltage (V)

VGS - Gate - Source Voltage (V)

Copyright ANPEC Electronics Corp.

75 100 125 150

Tj - Junction Temperature (C)

Source-Drain Diode Forward

IS - Source Current (A)

75 100 125 150

Tj - Junction Temperature (C)

VSD - Source - Drain Voltage (V)

VGS - Gate - source Voltage (V)

QG - Gate Charge (nC)

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.

-ID - Drain Current (A)