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Modulators
R. Sankaralingam
EE 698
Optical Modulation
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Direct modulation
Electro-optic modulation
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Electroabsorption modulation
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Advantages of EA modulator
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Electroabsorption modulator
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Mechanisms
Franz-Keldysh effect
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Franz-Keldysh effect
Tunneling allows overlap
of electron and hole
wavefunctions for photon
energy less than bandgap
-4
where,
1/ 3
q 2 E 2h 2
E' =
*
2m r
e - hw
b= g
E'
Excitonic electroabsorption
(Stark effect)
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Device structure
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Design considerations
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Operation principle
Contrast ratio
Insertion loss
Modulation efficiency
Chirp considerations and
efficiency
Packaging and integration
Extinction Ratio
Ron / off
Insertion loss
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Absorptive loss
Loss =
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Pin - Pout (V = 0)
= 1 - e -a ( 0 ) L
Pin
Can be as good as 1 dB
Modulation efficiency
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a (V ) - a (0)]L
Ron / off
Da
[
= 4.343
= 4.343
DV
DV
DF
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Chirp
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2w Dnr
4p Dnr
=c Dg
l Dg
a=
2w
4p
k=
k
c
l
Kramers-Kronig relation
Dn =
hc
Da
P 2
2 dE
p 0 E - (hw )
Chirp Engineering
Dn =
hc
Da
P 2
2 dE
p 0 E - (hw )
Df FWHM =
a e dI
2I dt
Integration
10Gb/s module, Ith = 20mA, Pmax = 4mW @80mA , extinction ratio = 15dB
for -2.5V
Acknowledgement
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