BD246, BD246A, BD246B, BD246C

PNP SILICON POWER TRANSISTORS

Copyright 1997, Power Innovations Limited, UK

JUNE 1973 - REVISED MARCH 1997

Designed for Complementary Use with the

BD245 Series

80 W at 25C Case Temperature

10 A Continuous Collector Current

15 A Peak Collector Current

Customer-Specified Selections Available

SOT-93 PACKAGE
(TOP VIEW)

3
Pin 2 is in electrical contact with the mounting base.
MDTRAA

absolute maximum ratings at 25C case temperature (unless otherwise noted)

RATING

SYMBOL
BD246

Collector-emitter voltage (RBE = 100 )

BD246A
BD246B

VCER

BD246B

-70

-90
-115

BD246
Collector-emitter voltage (IC = -30 mA)

UNIT

-55

BD246C
BD246A

VALUE

-45
VCEO

BD246C

-60

-80
-100

V EBO

-5

IC

-10

ICM

-15

IB

-3

Continuous device dissipation at (or below) 25C case temperature (see Note 2)

Ptot

80

Continuous device dissipation at (or below) 25C free air temperature (see Note 3)

Ptot

LIC 2

62.5

mJ

Tj

-65 to +150

Tstg

-65 to +150

TL

250

Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current

Unclamped inductive load energy (see Note 4)

Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.

This value applies for tp 0.3 ms, duty cycle 10%.

Derate linearly to 150C case temperature at the rate of 0.64 W/C.
Derate linearly to 150C free air temperature at the rate of 24 mW/C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 ,
VBE(off) = 0, RS = 0.1 , VCC = -20 V.

PRODUCT

INFORMATION

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

BD246, BD246A, BD246B, BD246C

PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997

electrical characteristics at 25C case temperature

PARAMETER

V (BR)CEO

ICES

ICEO
IEBO

hFE

VCE(sat)
VBE
hfe

|hfe|

TEST CONDITIONS

Collector-emitter
breakdown voltage

IC = -30 mA

MIN

IB = 0

(see Note 5)

BD246

-45

BD246A

-60

BD246B

-80

BD246C

-100

TYP

MAX

VCE = -55 V

VBE = 0

BD246

-0.4

Collector-emitter

V CE = -70 V

V BE = 0

BD246A

-0.4

cut-off current

V CE = -90 V

V BE = 0

BD246B

-0.4

V CE = -115 V

V BE = 0

BD246C

-0.4

Collector cut-off

VCE = -30 V

IB = 0

BD246/246A

-0.7

current

V CE = -60 V

IB = 0

BD246B/246C

-0.7

VEB =

-5 V

IC = 0

Emitter cut-off
current
Forward current
transfer ratio

-1

VCE =

-4 V

IC =

-1 A

V CE =

-4 V

IC =

-3 A

V CE =

-4 V

IC = -10 A

Collector-emitter

IB =

-0.3 A

IC =

saturation voltage

IB =

-2.5 A

IC = -10 A

-1

(see Notes 5 and 6)

-4

VCE =

-4 V

IC =

-4 V

IC = -10 A

VCE = -10 V

IC = -0.5 A

f = 1 kHz

20

VCE = -10 V

IC = -0.5 A

f = 1 MHz

current transfer ratio

mA

-3 A

V CE =

Small signal forward

mA

20

voltage
current transfer ratio

mA

40
(see Notes 5 and 6)

Base-emitter
Small signal forward

UNIT

-3 A

-1.6

(see Notes 5 and 6)

-3

V
V

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics
PARAMETER
RJC

Junction to case thermal resistance

RJA

Junction to free air thermal resistance

MIN

TYP

MAX

UNIT

1.56

C/W

42

C/W

MAX

UNIT

resistive-load-switching characteristics at 25C case temperature

PARAMETER

MIN

TYP

ton

Turn-on time

IC = -1 A

IB(on) = -0.1 A

IB(off) = 0.1 A

0.2

toff

Turn-off time

V BE(off) = 3.7 V

RL = 20

tp = 20 s, dc 2%

0.8

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

PRODUCT

TEST CONDITIONS

INFORMATION

BD246, BD246A, BD246B, BD246C

PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT

TCS634AG

VCE = -4 V
TC = 25C
tp = 300 s, duty cycle < 2%

100

10

1
-01

-10

-10

TCS634AB

-10

VCE(sat) - Collector-Emitter Saturation Voltage - V

hFE - DC Current Gain

1000

COLLECTOR-EMITTER SATURATION VOLTAGE

vs
BASE CURRENT
IC = -1 A
IC = -3 A
IC = -6 A
IC = -10 A
-10

-01

-001
-001

IC - Collector Current - A

-01

-10

-10

IB - Base Current - A

Figure 1.

Figure 2.

BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-16

TCS634AC

VBE - Base-Emitter Voltage - V

VCE = -4 V
TC = 25 C
-14

-12

-10

-08

-06
-01

-10

-10

IC - Collector Current - A

Figure 3.

PRODUCT

INFORMATION

BD246, BD246A, BD246B, BD246C

PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
-100

tp = 300 s, d = 0.1 = 10%

tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation

-10

IC - Collector Current - A

SAS634AC

-10

-01

BD246
BD246A
BD246B
BD246C

-001
-10

-10

-100

-1000

VCE - Collector-Emitter Voltage - V

Figure 4.

THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE

TIS633AA

Ptot - Maximum Power Dissipation - W

100

80

60

40

20

0
0

25

50

75

100

TC - Case Temperature - C

Figure 5.

PRODUCT

INFORMATION

125

150

BD246, BD246A, BD246B, BD246C

PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997

MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93

4,90
4,70

15,2
14,7

4,1
4,0

3,95
4,15

1,37
1,17

16,2 MAX.
12,2 MAX.

31,0 TYP.

18,0 TYP.

1,30

0,78
0,50

1,10
11,1
10,8

2,50 TYP.

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

PRODUCT

MDXXAW

INFORMATION

BD246, BD246A, BD246B, BD246C

PNP SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997

IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright 1997, Power Innovations Limited

PRODUCT

INFORMATION

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