SOLA3540/9001 Applied Photovoltaics

Topic 1 Test 2010 Solutions

Q1a

At a latitude of 12N, on February 4th, the solar time is 9 am.

the altitude and (iii) the azimuth of the Sun.

Calculate the (i) hour angle, (ii)

SOLUTION:
(i) the hour angle, = 15(hour 12) = -45 degrees
(ii) d = 31 (jan) + 4 (Feb) = 35
Declination of the sun is given by:

(d 81)360
,
365

sin

where = 23.45

(35 81)360
= -16.7
365

23.45 sin

The altitude of the sun can be calculated using the following relation.
sin s = cos cos cos + sin sin = cos(-16.7)cos(12)cos(-45) + sin(-16.7)sin(12) = 0.603
Hence, s = 37.07
(iii) cos s =

sin cos cos sin cos

cos s

cos s = [sin(-16.7)cos(12) cos(-16.7)sin(12)cos(-45)]/cos(37.07)

Therefore, the azimuth of the sun, s = 121.91
Q1b

A silicon solar cell (bandgap = 1.12 eV) with negligible parasitic resistances is uniformly
illuminated by monochromatic light of wavelength 400 nm and intensity 1 kW/m2. The cell has
area of 25 cm2, ideality factor of 1.1 and dark saturation current of 1 x 10-12 A at 300 K.
a. Calculate the short circuit current, open circuit voltage, fill factor and energy conversion
efficiency of the cell, assuming that all photons are absorbed and all e-h pairs are collected.

Given,
Bandgap, Eg = 1.12 eV
Wavelength of light, = 400 nm = 400 x 10-9 m
Intensity of light, I = 1 kW/m2
Cell area A = 25 cm2 = 25 x 10-4 m2
Ideality factor n = 1.1
Saturation current, I0 = 1 x 10-12 A
T = 300 K

The spectral responsivity SR is defined as:

SR () = ISC/Pin() = (q/hc).EQE
Therefore,
ISC = Pin.EQE (q/hc)
Pin = Intensity. Area = 1000 W/m2 * 25 x 10-4 m2 = 2.5 W
Hence,
ISC = Pin.EQE (q/hc) = 2.5 [(1.6x10-19 x 400x10-9)/(6.63x10-34x 3x108)]

[EQE =1]

ISC = 0.80 A
VOC = nkT/q [ln(ISC/I0+1] = 1.1 x 1.38 x 10-23x 300/[1.6 x 10-19 ln(0.08/1 x 10-12+1)]
VOC = 0.78 V
FF = (vOC-ln(vOC+0.72))/(vOC+1)
Where, vOC = VOC/(nkT/q) = 0.78/(1.1 x 1.38 x 10-23 x 300/1.6 x 10-19) = 27.41
Therefore,
FF = (27.41 ln(27.41+0.72))/(27.41+1)
FF = 0.85
Eff =ISCVOCFF/Pin = 0.80 x 0.78 x 0.85/2.5
Eff = 21.3%
b. Corrosion in the front metal contacts causes series resistance of RS = 0.01. What is the
fraction of power lost by the series resistance compared to the typical cell? [note: should
have used ideal cell]
Power at maximum power point with a series is given by:
PM(Rs) = PM (1-rs) = PM (1-Rs/Rch) = PM (1-RsIsc/Voc)
Where rs = Rs/Rch and Rch = Voc/Isc (characteristic resistance)
Therefore,
PM(Rs)/PM = (1-RsIsc/Voc) = 1- (0.01 x 0.80/0.78) ~0.99
Power loss ~ 1%

Q2a

Draw the cross-section of a typical commercial silicon solar cell. Label the relevant parts.
See lecture notes.
The diagram should include:
p-type substrate and n-type emitter layer
back metal contact (blanket)
top metal contact (grid/ finger)
antireflection coating/ texturing/ BSF would be useful
Example:

Q2b

Briefly describe how a solar cell operates.

See lecture note.
Answer should at least discuss:
Photogeneration (with photon energies Eph > Eg)
Charge separation by p-n junction (electrons to n-side, holes to p-side)
Charge collection (metal contacts)
Typical loss mechanism (optional but useful)

Q2c

A commercial solar cell uses 300 m thick p-type substrate with resistivity of 0.5 cm and 0.5
m thick n-layer with sheet resistivity of 40 /. The voltage and current density at maximum
power points for typical cells are VMP = 0.50 V and JMP = 30 mA/cm2, respectively. Calculate the
finger spacing that can limit the fractional power loss due to resistance of the substrate and the
top n-layer below 5%.
The fractional power lost due to the resistance of the substrate is given by:
Pfrac(substrate) = I2MPRs/Pgen = I2MPRs/(IMPVMP) = (IMP/VMP)(pW/A)= JMPWp/VMP
(Rs = pW/A; and JMP = IMP/A)
Therefore, Pfrac(substrate) = (30 x 10-3 x 300x10-4 x 0.5)/0.50 = 9x10-4 W (negligible)
The fractional power lost due to the resistance of the n-layer is given by:
Pfrac(n-layer) = psS2JMP/12VMP
S = [12VMP Pfrac(n-layer)/(ps JMP)]1/2
This gives

S <= 0.5cm (5 mm)