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Optical lithography
Robin Nagel
TUM
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Exposure
Develop
Etch
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Photoresist
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Defects
Particles in the photoresist (dust,old photoresist)
Bubbles
Rough substrate
Tear-off
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Kinds of photoresist
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Etch process
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Deposition
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Oxidation
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Interconnects
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Metallization
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Rayleigh equation:
- k= resolution factor
k
- = wavelengh
W =
NA
- NA= Numerical aperture
For example: =193nm, NA=0.93 and k=0.25
0.25 193nm
= 52nm
0.93
Use of Extrem UV lights (13nm) or X-Ray (0.5nm)
W =
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References
References
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circuits, 1965
Reed Business Information, 32 nm Marked by Litho, 2008
Daniel Bratton, Da Yang, Junyan Dai and Christopher K.
Ober,Recent progress in high resolution lithography,2006
Yong Chen, Anne Pepin, Nanofabrication:Conventional and
nonconventional methods,2001
icknowledge, Technology backgrounder: Immersion Lithography,
2003
Microchemicals, Lithografie, 2007
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