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TRANSISTOR
----------GITAM VISHAKAPATNAM
PRANGHI
------------
EMAIL:pranghi@outlook.com,mailto:pranghi@gmail.com
ANSW
ERS
1 Explain the structure of PNP and NPN transistor in detail?
NPN TRANSISTOR STRUCTURE:
This NPN transistor is made with two layers of N material and
sandwiched layer of P.
Transistor is composed three regions:
emitter
base
collector
Emitter:
It is a heavily doped and it is an n type material and having
more free electrons.
It supplies charge carriers (electrons and holes).
It is always forward biased with respective to base to
supply large no of majority carriers.
Base:
It is a another region composed of lightly doped n type
material
It has a few holes and having capable of carrying electrons.
It is lightly doped and very thin.
It is reverse bias & provide high resistance in collector
circuit.
Collector:
It is the n type material but not heavily doped and has
free electrons.
It is moderately doped.
Most of emitter carriers diffuse with the n base region and are
attracting with the collector region
Some of the electrons are attracted by the holes in the base
region and move to the collector side.
In an NPN transistor the emitter current is equal to sum of base
current and collector current.
In the NPN transistors current flows from collector to emitter.
The working principle of an NPN transistor is such that when you
increase current to the base terminal, then the transistor turns
ON and it conducts fully from the collector to emitter. When you
decrease the current to the base terminal, the transistor turns ON
less and until the current is so low, the transistor no longer
conducts across the collector to emitter, and shuts off.
Input Characteristics:
Keep output voltage VCE = 0V by varying VCC.
Varying VBB gradually, note down base current IB and baseemitter
voltage VBE.
Step size is not fixed because of nonlinear curve. Initially vary
VBB in
steps of 0.1V. Once the current starts increasing
vary VBB in steps of 1V up to 12V.
Repeat above procedure (step 3) for VCE = 5V.
Output Characteristics:
Connect the circuit as shown in the circuit diagram.
Keep emitter current IB = 20 A by varying VBB.
Varying VCC gradually in steps of 1V up to 12V and note down
collector current IC and Collector-Emitter Voltage (VCE).
Repeat above procedure (step 3) for IB = 60A, 0A.
Plot the input characteristics by taking VBE on X-axis and IB on Yaxis at a constant VCE as a constant parameter.
Plot the output characteristics by taking VCE on X-axis and taking IC
on Y-axis taking IB as a constant parameter.
Vce=vcc-IcRc
Vce=0
Ic=Vcc/Rc
In electronics, a common emitter amplifier is one of three basic singlestage bipolar-junction-transistor (BJT) amplifier topologies, typically
used as a amplifier.
In this circuit the base terminal of the transistor serves as the input, the
collector is the output, and the emitter is common to both, hence its
name. The analogous field-effect transistor circuit is the common source
amplifier, and the analogous tube circuit is the common cathode
amplifier.
Common emitter amplifiers give the amplifier an inverted output and
can have a very high gain that may vary widely from one transistor to
the next.
The gain is a strong function of both temperature and bias current, and
so the actual gain is somewhat unpredictable.
Stability is another problem associated with such high gain circuits due
to any unintentional positive feedback that may be present.
Other problems associated with the circuit are the low input dynamic
range imposed by the small-signal limit; there is high distortion if this
limit is exceeded and the transistor ceases to behave like its smallsignal model.
One common way of alleviating these issues is with emitter
degeneration. This refers to the addition of a small resistor (or any
impedance) between the emitter and the common signal source. This
impedance reduces the overall trans conductance of the circuit by a
factor of, which makes the voltage gain.
The voltage gain depends almost exclusively on the ratio of the resistors
rather than the transistor's intrinsic and unpredictable characteristics.
The distortion and stability characteristics of the circuit are thus
improved at the expense of a reduction in gain.
V1=h11+I1+h12V2
I2=h21I1+h22V2
V1=hi.I1+hr.V2
I2=hf.I1+ho.V2
IE=IC+IB
IC = IE
IE= IE + IB
IB= IE(1- )
vin=5v
Vbt=0.8v
Vct=0.12v
Ans.
Ie = 3 mA
ICBO = 50 x 10-6 A
A = 0.98
IC = ?
IB = ?
Ans.
a = 0.98
Icbo = 4 x 10-6 A
Ib = 50 x 10-6 A
Ie =?
Ic =?
Ic
= (a.Ib/1-a) + (ICBO/1-a)
= (0.98 x 50 x 10-6/1-0.98) + (4 x 10-6/1-0.98)
=24.5 x 10-4 + 2 x 10-4
=26.5 x 10-4 A
Ie
= Ib + I c
= 50 x 10-6 + 26.5 x 10-4
= 27 x 10-11 A