Académique Documents
Professionnel Documents
Culture Documents
Description
Applications
Adapter
Ballast
LCD TV, CRT TV
SMPS
Using FAN7530
Ordering Information
Part Number
Operating Temp.
Range
Pb-Free
Package
Packing Method
Marking
Code
FAN7530N
-40C to +125C
Yes
8-DIP
Rail
FAN7530
FAN7530M
-40C to +125C
Yes
8-SOP
Rail
FAN7530
FAN7530MX
-40C to +125C
Yes
8-SOP
FAN7530
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April 2007
VO
AC
IN
VAUX
I2
NAUX
RZCD
R2 ZCD
CO
VCC
FAN7530
INV
MOT
CS
I1
COMP
R1
GND
FAN7530 Rev. 00
VCC 8
UVLO
Vref1
VCC
Internal
Bias
12V
8.5V
Drive
Output
Disable
150ms
Timer
ZCD 5
S
6.7V
1.4V 1.5V
R
Zero Current
Detector
CS
OVP
Disable
40k
8pF
0.8V
MOT 2
7 OUT
13V
Ramp
Signal
Saw Tooth
Generator
2.675V
2.5V
0.45V 0.35V
Current Protection
Comparator
Vref1
1V Offset
Error
Amplifier
Gm
1V~5V
Range
1 INV
6
GND
COMP
FAN7530 Rev. 00
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2
VCC
OUT
GND
ZCD
YWW
FAN7530
1
INV
MOT
COMP
CS
FAN7530 Rev. 00
Pin Definitions
Pin #
Name
Description
INV
This pin is the inverting input of the error amplifier. The output voltage of the boost PFC
converter should be resistively divided to 2.5V.
MOT
This pin is used to set the slope of the internal ramp. The voltage of this pin is maintained at 3V. If a resistor is connected between this pin and GND, current flows out of
the pin and the slope of the internal ramp is proportional to this current.
COMP
This pin is the output of the transconductance error amplifier. Components for the output voltage compensation should be connected between this pin and GND.
CS
This pin is the input of the over-current protection comparator. The MOSFET current is
sensed using a sensing resistor and the resulting voltage is applied to this pin. An
internal RC filter is included to filter switching noise.
ZCD
This pin is the input of the zero current detection block. If the voltage of this pin goes
higher than 1.5V, then goes lower than 1.4V, the MOSFET is turned on.
GND
This pin is used for the ground potential of all the pins. For proper operation, the signal
ground and the power ground should be separated.
OUT
This pin is the gate drive output. The peak sourcing and sinking current levels are
+500mA and -800mA respectively. For proper operation, the stray inductance in the
gate driving path must be minimized.
VCC
This pin is the IC supply pin. IC current and MOSFET drive current are supplied using
this pin.
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3
Pin Assignments
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25C unless otherwise specified.
Symbol
VCC
IOH, IOL
Iclamp
Parameter
Supply Voltage
Peak Drive Output Current
Driver Output Clamping Diodes VO>VCC or VO<-0.3V
Idet
VIN
Value
Unit
VZ
+500/-800
mA
10
mA
10
mA
-0.3 to 6
150
C
C
Tj
TA
-40 to 125
Tstg
-65 to 150
VESD_HBM
2.0
kV
VESD_MM
300
VESD_CDM
500
Value
Unit
8-DIP
110
C/W
8-SOP
150
C/W
Thermal Impedance(1)
Symbol
Rja
Parameter
Thermal Resistance, Junction-to-Ambient
Note:
1. Regarding the test environment and PCB type, please refer to JESD51-2 and JESD51-10.
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4
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
11
12
13
VCC increasing
Vth(stop)
VCC decreasing
HY(uvlo)
UVLO Hysteresis
VZ
Zener Voltage
ICC = 20mA
7.5
8.5
9.5
3.0
3.5
4.0
20
22
24
40
70
ICC
Output no switching
1.5
3.0
mA
Idcc
50kHz, Cl=1nF
2.5
4.0
mA
Vinv = 0V
20
65
95
TA = 25C
2.465
2.500
2.535
Line Regulation
0.1
10.0
mV
ICC(dis)
Temperature Stability of
Ib(ea)
Vinv = 1V ~ 4V
Isource
-12
12
Veao(H)
Veao(Z)
0.9
1.0
1.1
Transconductance(2)
90
115
140
mho
2.784
2.900
3.016
19
24
29
0.7
0.8
0.9
-1.0
-0.1
1.0
350
500
ns
Isink
gm
Vref1(2)
20
-0.5
5.4
mV
0.5
6.0
6.6
Rmot = 40.5k
VCS = 0V ~ 1V
Output(2)
dV/dt = 1V/100ns,
From 0V to 5V
Note:
2. These parameters, although guaranteed by design, are not tested in mass production.
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5
Electrical Characteristics
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
1.35
1.50
1.65
HY(ZCD)
Detect Hysteresis
0.05
0.10
0.15
Vclamp(H)
Idet = 3mA
6.0
6.7
7.4
Vclamp(L)
Idet = -3mA
0.65
1.00
-1.0
-0.1
1.0
Ib(ZCD)
VZCD = 1V ~ 5V
(3)
Isource(zcd)
TA = 25C
-10
mA
Isink(zcd)
TA = 25C
10
mA
200
ns
11.0
12.8
tdead
100
OUTPUT SECTION
VOH
IO = -100mA, TA = 25C
VOL
IO = 200mA, TA = 25C
1.0
2.5
tr
Rising
Time(3)
Cl = 1nF
50
100
ns
Falling
Time(3)
Cl = 1nF
50
100
ns
13.0
14.5
tf
VO(max)
VO(UVLO)
9.2
11.5
50
150
300
TA = 25C
2.620
2.675
2.730
OVP Hysteresis
TA = 25C
0.120
0.175
0.230
ENABLE SECTION
Vth(en)
0.40
0.45
0.50
HY(en)
Enable Hysteresis
0.05
0.10
0.15
Note:
3. These parameters, although guaranteed by design, are not tested in mass production.
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6
9.5
12.5
9.0
Vth(stop) [V]
Vth(start) [V]
13.0
12.0
8.5
8.0
11.5
7.5
11.0
-60 -40 -20
20
40
60
80
40
60
80
4.00
23.0
3.75
22.5
VZ [V]
HY(UVLO) [V]
3.50
22.0
21.5
3.25
21.0
3.00
-60 -40 -20
20
40
60
80
20
40
60
80
Temperature [C]
Temperature [C]
60
2.4
ICC [mA]
45
Ist [A]
20
Temperature [C]
Temperature [C]
30
1.6
0.8
15
0.0
-60 -40 -20
20
40
60
80
20
40
60
80
Temperature [C]
Temperature [C]
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7
Typical Characteristics
90
72
ICC(dis) [A]
Idcc [mA]
54
36
0
-60 -40 -20
20
40
60
80
Temperature [C]
20
40
60
80
Temperature [C]
10.0
7.5
Vref1 [mV]
Vref1 [V]
2.52
2.50
5.0
2.5
2.48
0.0
-60 -40 -20
20
40
60
80
20
40
60
80
Temperature [C]
Temperature [C]
0.50
-9
Isource [A]
Ib(ea) [A]
0.25
0.00
-12
-15
-0.25
-0.50
-18
-60 -40 -20
20
40
60
80
Temperature [C]
20
40
60
80
Temperature [C]
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8
6.6
15
6.3
Veao(H) [V]
Isink [A]
18
12
6.0
5.7
5.4
-60 -40 -20
20
40
60
80
Temperature [C]
20
40
60
80
Temperature [C]
1.10
3.00
2.95
Vmot [V]
Veao(Z) [V]
1.05
1.00
2.90
2.85
0.95
2.80
0.90
-60 -40 -20
20
40
60
80
Temperature [C]
20
40
60
80
Temperature [C]
0.90
0.85
Vcs(limit) [V]
Ton(max) [s]
27
24
0.80
0.75
21
0.70
-60 -40 -20
20
40
60
80
Temperature [C]
20
40
60
80
Temperature [C]
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9
1.0
7.2
6.8
Vclamp(H) [V]
Ib(cs) [A]
0.5
0.0
6.4
-0.5
6.0
-1.0
-60 -40 -20
20
40
60
80
Temperature [C]
40
60
80
1.00
1.0
0.75
0.5
Ib(zcd) [A]
Vclamp(L) [V]
20
Temperature [C]
0.50
0.25
0.0
-0.5
0.00
-1.0
-60 -40 -20
20
40
60
80
Temperature [C]
20
40
60
80
Temperature [C]
0.9
14
VO(uvlo) [V]
VO(max) [V]
0.6
13
12
0.3
0.0
-0.3
20
40
60
80
Temperature [C]
20
40
60
80
Temperature [C]
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10
2.73
300
250
200
Vovp [V]
td(rst) [s]
2.70
150
100
2.67
2.64
50
-60 -40 -20
20
40
60
80
20
40
60
80
Temperature [C]
Temperature [C]
0.500
0.21
Vth(en) [V]
HY(OVP) [V]
0.475
0.18
0.450
0.15
0.425
0.400
0.12
-60 -40 -20
20
40
60
80
20
40
60
80
Temperature [C]
Temperature [C]
0.150
HY(en) [V]
0.125
0.100
0.075
0.050
-60 -40 -20
20
40
60
80
Temperature [C]
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11
rent detector turns on the MOSFET. The ZCD pin is protected internally by two clamps, 6.7V-high clamp and
0.65V-low clamp. The 150s timer generates a MOSFET
turn-on signal if the drive output has been low for more
than 150s from the falling edge of the drive output.
150s
Timer
Vin
Turn-on
Signal
ZCD
5
RZCD
6.7V
1.4V
1.5V
Zero Current
Detector
R
FAN7529 Rev. 00
2.675V
2.5V
OVP
Disable
0.45V
0.35V
Vout
Vref1 (2.5V)
Error Amp
Gm
INV
1
Disable
Signal
3
COMP
Off Signal
FAN7530 Rev. 00
1V Offset
MOT
Sawtooth
Generator
2.9V
Error Amp
Output
FAN7529 Rev. 00
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12
Applications Information
The MOSFET current is sensed using an external sensing resistor for the over-current protection. If the CS pin
voltage is higher than 0.8V, the over-current protection
comparator generates a protection signal. An internal RC
filter is included to filter switching noise.
OCP
Signal
40k
CS
Over-Current Protection
Comparator
FAN7529 Rev. 00
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13
Application
Output Power
Input Voltage
Output Voltage
Ballast
100W
Universal input
(85~265Vac)
400V
Features
High efficiency (>90% at 85Vac input)
Low THD (total harmonic distortion) (<10% at 265Vac input, 25W load)
1. Schematic
T1
PFC OUTPUT
VAUX
BD
D2
C5
R4
R3
R5
R10
D3
C10
Q1
NTC
ZD1
R6
C11
D1
C3
C9
C4
VCC
OUT GND
ZCD
C2
R9
LF1
FAN7530
R2
C1
V1
INV
MOT COMP CS
R1
F1
R11
R8
R7
C7
C6
C8
FAN7530 Rev. 00
AC INPUT
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14
4
NVcc
2
3
Np
5
FAN7529 Rev. 00
3. Winding Specification
No
Pin (sf)
53
Np
Wire
0.1
30
Turns
Winding Method
58
Solenoid Winding
Solenoid Winding
NVcc
0.2 10
4. Electrical Characteristics
Inductance
Pin
Specification
Remarks
3-5
600H 10%
100kHz, 1V
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15
Part
Value
Note
Part
Value
Fuse
F1
3A/250V
NTC
10D-9
Note
Inductor
T1
600H
EI3026
NTC
MOSFET
Resistor
Q1
FQPF13N50C
Fairchild
R1
56k
1/4W
R2
820k
1/4W
R3
330k
1/2W
D1
1N4148
Fairchild
R4
150
1/2W
D2
BYV26C
600V, 1A
R5
20k
1/4W
D3
SB140
Fairchild
R6
10
1/4W
ZD1
1N4746
18V
R7
0.2
1/2W
R8
10k
1/4W
R9
10k
1/4W
R10
2M
1/4W
R11
12.9k
1/4W
Diode
Bridge Diode
BD
KBL06
600V/4A
Line Filter
Capacitor
LF1
C1
150nF/275VAC
Box Capacitor
C2
470nF/275VAC
Box Capacitor
C3
2.2nF/3kV
Ceramic Capacitor
C4
2.2nF/3kV
Ceramic Capacitor
C6
47F/25V
Electrolytic Capacitor
C7
47nF/50V
Ceramic Capacitor
220nF/50V
Multilayer Ceramic
Capacitor
C9
100F/450V
Electrolytic Capacitor
C10
12nF/100V
Film Capacitor
C11
56pF/50V
Ceramic Capacitor
40mH
IC
IC1
FAN7530
V1
471
C5
C8
Fairchild
TNR
Wire 0.4mm
470V
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16
7. Layout
Power Ground
Signal Ground
8. Performance Data
POUT
100W
75W
50W
25W
85Vac
115Vac
230Vac
265Vac
PF
0.998
0.998
0.991
0.984
THD
5.1%
3.6%
5.2%
6.2%
Efficiency
90.9%
93.7%
95.6%
96%
PF
0.999
0.998
0.986
0.975
THD
4.1%
3.6%
5.0%
5.7%
Efficiency
91.6%
93.3%
94.6%
95.3%
PF
0.998
0.997
0.974
0.956
THD
4.4%
5.0%
5.7%
6.2%
Efficiency
91.3%
91.9%
92.7%
93.4%
PF
0.995
0.991
0.923
0.876
THD
7.9%
8.6%
8.3%
8.7%
Efficiency
86.4%
87.1%
87.3%
88.1%
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17
8-DIP
#5
1.524 0.10
0.060 0.004
#4
0.018 0.004
#8
2.54
0.100
9.60
MAX
0.378
#1
9.20 0.20
0.362 0.008
6.40 0.20
0.252 0.008
0.46 0.10
0.79
)
0.031
7.62
0.300
3.30 0.30
0.130 0.012
5.08
MAX
0.200
3.40 0.20
0.134 0.008
0.33
MIN
0.013
+0.10
0.25 0.05
+0.004
0~15
0.010 0.002
September 1999, Rev B
8dip_dim.pdf
Figure 40. 8-Lead Dual In-Line Package (DIP)
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18
Mechanical Dimensions
8-SOP
Dimensions are in millimeters (inches) unless otherwise noted.
MIN
#5
6.00 0.30
0.236 0.012
0.41 0.10
0.016 0.004
#4
1.27
0.050
#8
5.13
MAX
0.202
#1
4.92 0.20
0.194 0.008
0.56
)
0.022
1.55 0.20
0.061 0.008
0.1~0.25
0.004~0.001
MAX0.10
MAX0.004
+0.10
0.15 -0.05
+0.004
0.006 -0.002
1.80
MAX
0.071
3.95 0.20
0.156 0.008
0~
8
5.72
0.225
0.50 0.20
0.020 0.008
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19
ACEx
Across the board. Around the world.
ActiveArray
Bottomless
Build it Now
CoolFET
CROSSVOLT
CTL
Current Transfer Logic
DOME
2
E CMOS
EcoSPARK
EnSigna
FACT Quiet Series
FACT
FAST
FASTr
FPS
FRFET
GlobalOptoisolator
GTO
HiSeC
i-Lo
ImpliedDisconnect
IntelliMAX
ISOPLANAR
MICROCOUPLER
MicroPak
MICROWIRE
Motion-SPM
MSX
MSXPro
OCX
OCXPro
OPTOLOGIC
OPTOPLANAR
PACMAN
PDP-SPM
POP
Power220
Power247
PowerEdge
PowerSaver
Power-SPM
PowerTrench
Programmable Active Droop
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
ScalarPump
SMART START
SPM
STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TCM
TinyBoost
TinyBuck
TinyLogic
TINYOPTO
TinyPower
TinyWire
TruTranslation
PSerDes
UHC
UniFET
VCX
Wire
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.
Product Status
Definition
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
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20
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an
exhaustive list of all such trademarks.