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7N10
Power MOSFET
7 A, 1 0 0 V N-CH AN NEL
POWER MOSFET
1
SOT-223
1
TO-252
1
TO-252D
FEAT URES
TO-251
S YMBOL
ORDER IN G IN
MAT ION
Ordering Number
Lead Free
Halogen Free
7N10G-AA3-R
7N10L-TM3-T
7N10G-TM3-T
7N10L-TN3-R
7N10G-TN3-R
7N10L-TND-R
7N10G-TND-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
SOT-223
TO-251
TO-252
TO-252D
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tape Reel
Tube
Tape Reel
Tape Reel
7N10
Power MOSFET
MARK IN G
SOT-223
7N10
Power MOSFET
TC =25C
TC = 70C
SYMBOL
VDSS
VGSS
ID
ID
IDM
IAR
EAR
EAS
dv/dt
RATINGS
100
25
7
6.8
16
7
0.2
50
6.0
2.0
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
RATINGS
62.5
UNIT
SYMBOL
SOT-223
Junction to Ambient
TO-251/TO-252
JA
TO-252D
SOT-223
Junction to Case
TO-251/TO-252
JC
TO-252D
Note: When mounted on the minimum pad size recommended (PCB Mount)
50
C/W
12
7.5
C/W
7N10
Power MOSFET
ELECTR ICAL CH ARACTER IST ICS (TC =25C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
BVDSS
VGS =0V, ID =250A
BVDSS/ TJ Reference to 25C, ID =250A
VDS =100V, VGS =0V
IDSS
VDS =80V, TC =125C
IGSS
VGS =25V, VDS =0V
2.0
V
V/C
1
A
10
A
100 nA
4.0
0.144 0.35
1.85
380
70
11
14.3
4.2
3.2
30
40
80
35
70
150
V
S
450
85
15
pF
pF
pF
38
50
90
40
nC
nC
nC
ns
ns
ns
ns
16
1.5
V
ns
nC
7N10
Power MOSFET
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
10V
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
VSD
VDD
7N10
Power MOSFET
VGS
Same Type
as DUT
QG
12V
10V
200nF
50k
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
tP
DUT
VDD
VDD
VDS(t)
tP
Time
7N10
Power MOSFET
4
VGS=10V, ID=3.5A
3.5
2.5
2
1.5
1
10
100us
1
1ms
10ms
0.5
0
0
0.2
0.4
0.6
0.8
Drain to Source Voltage, VDS (V)
0.1
0.1
100ms
DC,1s
1
10
100
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